Prodotti Infineon Technologies

IRGS4610DPBF

Infineon Technologies

IGBT 600V 16A 77W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
• Power - Max: 77W
• Switching Energy: 56µJ (on), 122µJ (off)
• Input Type: Standard
• Gate Charge: 13nC
• Td (on/off) @ 25°C: 27ns/75ns
• Test Condition: 400V, 6A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRGR4045D

Infineon Technologies

IGBT 600V 12A 77W DPAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
• Power - Max: 77W
• Switching Energy: 56µJ (on), 122µJ (off)
• Input Type: Standard
• Gate Charge: 19.5nC
• Td (on/off) @ 25°C: 27ns/75ns
• Test Condition: 400V, 6A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

IRG4BC30W-STRLP

Infineon Technologies

IGBT 600V 23A 100W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 23A
• Current - Collector Pulsed (Icm): 92A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 130µJ (on), 130µJ (off)
• Input Type: Standard
• Gate Charge: 51nC
• Td (on/off) @ 25°C: 25ns/99ns
• Test Condition: 480V, 12A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRFS3006-7P

Infineon Technologies

MOSFET N-CH 60V 293A D2PAK-7P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8850pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 168A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

pacchetto: TO-263-7, D2Pak (6 Leads + Tab)

IPB039N04LGATMA1

Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 45µA
• Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF6725MTR1PBF

Infineon Technologies

MOSFET N-CH 30V 28A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

pacchetto: DirectFET? Isometric MX

IRFS23N20DTRRP

Infineon Technologies

MOSFET N-CH 200V 24A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPF09N03LA

Infineon Technologies

MOSFET N-CH 25V 50A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: P-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

IPA60R060C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 16A TO-220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 800µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220 Full Pack
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

IPW60R190C6

Infineon Technologies

MOSFET N-CH 600V 20.2A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 630µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 151W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

pacchetto: TO-247-3

IRLU2905ZPBF

Infineon Technologies

MOSFET N-CH 55V 42A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

PTFA092213ELV4T400XWSA1

Infineon Technologies

IC RF FET LDMOS H-33288-6

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

IRF9952

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

BFR843EL3E6327XTSA1

Infineon Technologies

TRANSISTOR NPN TSLP-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 2.6V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 25.5dB
• Power - Max: 125mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 55mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-XFDFN
• Supplier Device Package: TSLP-3-10

pacchetto: 3-XFDFN

BAR6302LE6433XT

Infineon Technologies

DIODE RF SGL 50V 100MA TSLP-2

• Diode Type: PIN - Single
• Voltage - Peak Reverse (Max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
• Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
• Power Dissipation (Max): 250mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SOD-882
• Supplier Device Package: PG-TSLP-2

pacchetto: SOD-882

F43L50R07W2H3FB11BPSA1

Infineon Technologies

MOD DIODE BRIDGE EASY2B-2-1

• Diode Type: -
• Technology: -
• Voltage - Peak Reverse (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

IR3843AMTR1PBF

Infineon Technologies

IC REG BUCK ADJ 3A SYNC 15QFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 1.5V
• Voltage - Input (Max): 21V
• Voltage - Output (Min/Fixed): 0.7V
• Voltage - Output (Max): 18.9V
• Current - Output: 3A
• Frequency - Switching: 225kHz ~ 1.32MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 15-PowerVQFN
• Supplier Device Package: PQFN (5x6)

pacchetto: 15-PowerVQFN

IPS7071GTRPBF

Infineon Technologies

IC SWITCH IPS 1CH HI SIDE 8-SOIC

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 35 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.5A
• Rds On (Typ): 80 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

XMC4500F144K768ACXQMA1

Infineon Technologies

IC MCU 32BIT 1MB FLASH 144LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, SPI, UART, USB
• Peripherals: DMA, I2S, LED, POR, PWM, WDT
• Number of I/O: 91
• Program Memory Size: 768KB (768K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 160K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 32x12b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: 144-LQFP (20x20)

pacchetto: 144-LQFP Exposed Pad

PVT442S

Infineon Technologies

IC RELAY 400V 170MA AC/DC 6SMD

• Circuit: SPST-NC (1 Form B)
• Output Type: AC, DC
• On-State Resistance (Max): 16 Ohm
• Load Current: 170mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 400 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SMD, Gull Wing
• Supplier Device Package: 6-SMT
• Relay Type: Relay

pacchetto: 6-SMD, Gull Wing

C164CI8RMCAFXQMA1

Infineon Technologies

IC MCU 16BIT 80MQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: 80-MQFP

pacchetto: -

IPD35N12S3L24ATMA2

Infineon Technologies

MOSFET_(120V 300V)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 39µA
• Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2691 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 71W (Tc)
• Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-11
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

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FP25R12N2T7B16BPSA1

Infineon Technologies

LOW POWER ECONO

• IGBT Type: Trench Field Stop
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY2B

pacchetto: -

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TD570N16KOFHPSA2

Infineon Technologies

SCR MODULE 1600V 900A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 600 A
• Current - On State (It (RMS)) (Max): 900 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

pacchetto: -

IPDQ60R022S7XTMA1

Infineon Technologies

HIGH POWER_NEW PG-HDSOP-22

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 12V
• Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
• Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
• Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 416W (Tc)
• Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-22-1
• Package / Case: 22-PowerBSOP Module

pacchetto: -

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CY9AF314NPMC-GE1

Infineon Technologies

IC MCU 32BIT 256KB FLASH 100LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

pacchetto: -

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TZ740N22KOFTIMHPSA1

Infineon Technologies

SCR MODULE 2200V 1500A MODULE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 819 A
• Current - On State (It (RMS)) (Max): 1500 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
• Current - Hold (Ih) (Max): 500 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

pacchetto: -

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CY62158GE30-45BVXI

Infineon Technologies

IC SRAM 8MBIT PARALLEL 48VFBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 8Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45 ns
• Voltage - Supply: 2.2V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-VFBGA (6x8)

pacchetto: -

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