Prodotti Infineon Technologies

IRGB4060DPBF

Infineon Technologies

IGBT 600V 16A 99W TO220AB

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 32A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
• Power - Max: 99W
• Switching Energy: 70µJ (on), 145µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 30ns/95ns
• Test Condition: 400V, 8A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacchetto: TO-220-3

SPB80N03S2L-05 G

Infineon Technologies

MOSFET N-CH 30V 80A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 110µA
• Gate Charge (Qg) (Max) @ Vgs: 89.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 167W (Tc)
• Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 55A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF6668TR1PBF

Infineon Technologies

MOSFET N-CH 80V 55A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MZ
• Package / Case: DirectFET? Isometric MZ

pacchetto: DirectFET? Isometric MZ

IRF3710ZSPBF

Infineon Technologies

MOSFET N-CH 100V 59A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 160W (Tc)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPW65R150CFDAFKSA1

Infineon Technologies

MOSFET N-CH 650V TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 900µA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 195.3W (Tc)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

pacchetto: TO-247-3

IPS65R950C6AKMA1

Infineon Technologies

MOSFET N-CH 650V 4.5A TO-251

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Stub Leads, IPak

pacchetto: TO-251-3 Stub Leads, IPak

IPI086N10N3GXKSA1

Infineon Technologies

MOSFET N-CH 100V 80A TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 75µA
• Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 73A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFP044NPBF

Infineon Technologies

MOSFET N-CH 55V 53A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 29A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC
• Package / Case: TO-247-3

pacchetto: TO-247-3

BDP950E6327HTSA1

Infineon Technologies

TRANS PNP 60V 3A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
• Power - Max: 5W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

pacchetto: TO-261-4, TO-261AA

BFP540ESDH6327XTSA1

Infineon Technologies

TRANS RF NPN 4.5V 80MA SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 30GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
• Gain: 21.5dB
• Power - Max: 250mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

pacchetto: SC-82A, SOT-343

TLE4264G

Infineon Technologies

IC REG LINEAR 5V 120MA SOT223-4

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 100mA
• Current - Output: 120mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 400µA ~ 15mA
• PSRR: 54dB (100Hz)
• Control Features: -
• Protection Features: Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

pacchetto: TO-261-4, TO-261AA

TLF42772ELXUMA2

Infineon Technologies

IC REG LINEAR 300MA 14SSOP

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-SSOP-14-EP

pacchetto: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad

ITS621L1HKSA1

Infineon Technologies

IC SWITCH HISIDE SMART TO220-7

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 34 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.5A
• Rds On (Typ): 80 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -30°C ~ 85°C (TA)
• Package / Case: TO-220-7 (Formed Leads)
• Supplier Device Package: TO-220AB/7

pacchetto: TO-220-7 (Formed Leads)

BTS50302EKAXUMA1

Infineon Technologies

IC PWR SW HI-SIDE 2CH DSO14-40

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 4A
• Rds On (Typ): 30 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-14-40-EP

pacchetto: 14-SOIC (0.154", 3.90mm Width) Exposed Pad

CHL8326-02CRT

Infineon Technologies

IC REG BUCK 48VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

MA2304DNSXUMA1

Infineon Technologies

THE MA2304DNS IS A 2X37 W AUDIO

• Type: Class D
• Output Type: 2-Channel (Stereo)
• Max Output Power x Channels @ Load: 74W x 1 @ 2Ohm; 37W x 2 @ 4Ohm
• Voltage - Supply: 10V ~ 20V
• Features: -
• Mounting Type: Surface Mount
• Operating Temperature: -25°C ~ 85°C (TA)
• Supplier Device Package: PG-VQFN-40
• Package / Case: 40-VFQFN Exposed Pad

pacchetto: -

CG7706AA

Infineon Technologies

SEMICONDUCTOR OTHER

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

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IRFU2405PBFAKLA1

Infineon Technologies

MOSFET N-CH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

Request a Quote

FS45MR12W1M1PB11BPSA1

Infineon Technologies

LOW POWER EASY AG-EASY1BM-2

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

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IPD06P005LSAUMA1

Infineon Technologies

MOSFET P-CH 60V 6.5A TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 28W (Tc)
• Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-313
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

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D711N65TXPSA1

Infineon Technologies

DIODE GEN PURP 6.5KV 1070A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 6500 V
• Current - Average Rectified (Io): 1070A
• Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 mA @ 6500 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 160°C

pacchetto: -

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FS200R12N3T7BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3-4

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 200 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A
• Current - Collector Cutoff (Max): 16 µA
• Input Capacitance (Cies) @ Vce: 40.3 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO3B

pacchetto: -

FZ1800R12HP4B9HOSA2

Infineon Technologies

IGBT MODULE 1200V 2700A

• IGBT Type: Trench
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 2700 A
• Power - Max: 10500 W
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1800A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

pacchetto: -

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BSM200GD60DLCBOSA1

Infineon Technologies

IGBT MOD 600V 226A 700W

• IGBT Type: -
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 226 A
• Power - Max: 700 W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
• Current - Collector Cutoff (Max): 500 µA
• Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

pacchetto: -

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IAUCN04S6N007TATMA1

Infineon Technologies

MOSFET_(20V 40V)

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

SAB-C-541U-1EN

Infineon Technologies

LEGACY 8-BIT MCU

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

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FF2400R12IP7PBPSA1

Infineon Technologies

PP IHM I

• IGBT Type: -
• Configuration: Half Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 2400 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-PRIME3+

pacchetto: -

IFF300B12ME4PB11BPSA1

Infineon Technologies

IGBT MOD 1200V 300A 20MW ECONO

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 300 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONOD-6

pacchetto: -