Prodotti IXYS

IXGH35N120B

IXYS

IGBT 1200V 70A 300W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
• Power - Max: 300W
• Switching Energy: 3.8mJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 50ns/180ns
• Test Condition: 960V, 35A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

pacchetto: TO-247-3

IXBH14N250A

IXYS

IGBT 2500V TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXBH)

pacchetto: TO-247-3

IXGT4N250C

IXYS

IGBT 2500V 13A 150W TO268

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): 46A
• Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A
• Power - Max: 150W
• Switching Energy: 360µJ (off)
• Input Type: Standard
• Gate Charge: 57nC
• Td (on/off) @ 25°C: -/350ns
• Test Condition: 1250V, 4A, 20 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

MWI60-06G6K

IXYS

MOD IGBT SIX-PACK RBSOA E1

• IGBT Type: -
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Power - Max: 180W
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
• Current - Collector Cutoff (Max): 200µA
• Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E1
• Supplier Device Package: E1

pacchetto: E1

MWI15-12A6K

IXYS

MOD IGBT RBSOA SIXPACK E1

• IGBT Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 19A
• Power - Max: 90W
• Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
• Current - Collector Cutoff (Max): 900µA
• Input Capacitance (Cies) @ Vce: 0.6nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E1
• Supplier Device Package: E1

pacchetto: E1

IXFV15N100P

IXYS

MOSFET N-CH 1000V 15A PLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 543W (Tc)
• Rds On (Max) @ Id, Vgs: 760 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS220
• Package / Case: TO-220-3, Short Tab

pacchetto: TO-220-3, Short Tab

IXTP220N055T

IXYS

MOSFET N-CH 55V 220A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 430W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

IXFL60N60

IXYS

MOSFET N-CH 600V 60A ISOPLUS264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700W (Tc)
• Rds On (Max) @ Id, Vgs: 80 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS264?
• Package / Case: ISOPLUS264?

pacchetto: ISOPLUS264?

IXTK110N30

IXYS

MOSFET N-CH 300V 110A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 730W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264 (IXTK)
• Package / Case: TO-264-3, TO-264AA

pacchetto: TO-264-3, TO-264AA

IXFK20N80Q

IXYS

MOSFET N-CH 800V 20A TO-264AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

pacchetto: TO-264-3, TO-264AA

IXTT140P10T

IXYS

MOSFET P-CH 100V 140A TO-268

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 31400pF @ 25V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 568W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT88N30P

IXYS

MOSFET N-CH 300V 88A TO268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 600W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXZ318N50

IXYS

RF MOSFET N-CHANNEL

• Transistor Type: N-Channel
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: 1mA
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: 500V
• Package / Case: 6-SMD, Flat Lead Exposed Pad
• Supplier Device Package: -

pacchetto: 6-SMD, Flat Lead Exposed Pad

IXZ308N120

IXYS

RF MOSFET N-CHANNEL DE375

• Transistor Type: N-Channel
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: 1mA
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: 1200V
• Package / Case: 6-SMD, Flat Lead Exposed Pad
• Supplier Device Package: -

pacchetto: 6-SMD, Flat Lead Exposed Pad

MCD224-22IO1

IXYS

MOD THYRISTOR/DIODE 2200V Y1-CU

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 2200V
• Current - On State (It (AV)) (Max): 240A
• Current - On State (It (RMS)) (Max): 400A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8500A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU

pacchetto: Y1-CU

MCC220-14IO1

IXYS

MOD THYRISTOR DUAL 1400V Y2-DCB

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 250A
• Current - On State (It (RMS)) (Max): 400A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 9000A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y2-DCB

pacchetto: Y2-DCB

MCD26-16IO8B

IXYS

MOD THYRISTOR/DIO 1600V TO-240AA

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 32A
• Current - On State (It (RMS)) (Max): 50A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

pacchetto: TO-240AA

DPF120X200NA

IXYS

DIODE MODULE 200V 120A SOT227B

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 120A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B
• Operating Temperature - Junction: -

pacchetto: SOT-227-4, miniBLOC

MDD72-08N1B

IXYS

DIODE MODULE 800V 113A TO240AA

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 113A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 300A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA
• Supplier Device Package: TO-240AA

pacchetto: TO-240AA

GUO40-16NO1

IXYS

3-PHASE BRIDGE RECT 1600V 40A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
• Current - Reverse Leakage @ Vr: 40µA @ 1600V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 5-SIP
• Supplier Device Package: 5-SIP

pacchetto: 5-SIP

IXCP60M35

IXYS

IC CURRENT REGULATOR TO220AB

• Function: Current Regulator
• Sensing Method: -
• Accuracy: -
• Voltage - Input: -
• Current - Output: 60mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacchetto: TO-220-3

DMA30P1200HB

IXYS

DIODE GEN PURP 1.2KV 30A TO247

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
• Capacitance @ Vr, F: 11pF @ 400V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXTH)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

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MCNA180PD2200YB

IXYS

BIPOLAR MODULE - THYRISTOR Y4-M

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 180 A
• Current - On State (It (RMS)) (Max): 280 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y4-M6

pacchetto: -

R1446NC12E

IXYS

SCR 1.2KV 2940A W11

• Voltage - Off State: 1.2 kV
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 1.7 V
• Current - On State (It (AV)) (Max): 1446 A
• Current - On State (It (RMS)) (Max): 2940 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: TO-200AC, K-PUK
• Supplier Device Package: W11

pacchetto: -

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MCMA240UI1600ED

IXYS

SCR MODULE 1.6KV 240A E2 PACK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 3 SCRs, 3 Diodes
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 240 A
• Current - On State (It (RMS)) (Max): 200 A
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 95 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E2

pacchetto: -

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IXGP28N60A3

IXYS

IGBT

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 75 A
• Current - Collector Pulsed (Icm): 170 A
• Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
• Power - Max: 190 W
• Switching Energy: 700µJ (on), 2.4mJ (off)
• Input Type: Standard
• Gate Charge: 66 nC
• Td (on/off) @ 25°C: 18ns/300ns
• Test Condition: 480V, 24A, 10Ohm, 15V
• Reverse Recovery Time (trr): 26 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

pacchetto: -

MDMA360UB1600PTED

IXYS

BIPOLARMODULE-RECTIFIER+BRAKE E2

• Diode Type: Three Phase (Braking)
• Technology: Standard
• Voltage - Peak Reverse (Max): 1.6 kV
• Current - Average Rectified (Io): 360 A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A
• Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E2
• Supplier Device Package: E2

pacchetto: -

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DPG30IM400PC-TRL

IXYS

DIODE GEN PURP 400V 30A TO263

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 32pF @ 200V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)
• Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

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