Pagina 39 - Transistor - JFET | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - JFET

Record 1.142
Pagina  39/41
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SST4416-E3
Vishay Siliconix

JFET N-CH 36V 5MA SOT-23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.136
30V
-
5mA @ 15V
-
3V @ 1nA
2.2pF @ 15V
-
350mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2N5116JAN02
Vishay Siliconix

JFET P-CH 30V TO-18

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione4.096
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
2N5114JTXV02
Vishay Siliconix

JFET P-CH 30V TO-206AA

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione4.896
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
hot 2N4338
Vishay Siliconix

MOSFET N-CH 50V 600UA TO-206AA

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 50V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione14.664
50V
-
200µA @ 15V
-
300mV @ 100nA
7pF @ 15V
-
300mW
-55°C ~ 175°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
hot 2SK596S-B
ON Semiconductor

JFET N-CH 1MA 100MW SPA

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 150µA @ 5V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-72
  • Supplier Device Package: 3-SPA
pacchetto: SC-72
Azione14.040
-
-
150µA @ 5V
1mA
500mV @ 1µA
4.1pF @ 5V
-
100mW
150°C (TJ)
Through Hole
SC-72
3-SPA
TF256-5-TL-H
ON Semiconductor

JFET N-CH 1MA 30MW USFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 240µA @ 2V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
  • Resistance - RDS(On): -
  • Power - Max: 30mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: 3-USFP
pacchetto: SOT-1123
Azione4.688
-
-
240µA @ 2V
1mA
100mV @ 1µA
3.1pF @ 2V
-
30mW
150°C (TJ)
Surface Mount
SOT-1123
3-USFP
2N5638RLRAG
ON Semiconductor

JFET N-CH 35V 0.31W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 310mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione5.072
35V
30V
50mA @ 20V
-
-
10pF @ 12V (VGS)
30 Ohm
310mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot P1087
Fairchild/ON Semiconductor

JFET P-CH 30V 350MW TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
  • Resistance - RDS(On): 150 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione7.920
30V
-
5mA @ 20V
-
5V @ 1µA
45pF @ 15V
150 Ohm
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
J111_D27Z
Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.800
35V
-
20mA @ 15V
-
3V @ 1µA
-
30 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2N5459_D27Z
Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione5.888
25V
-
4mA @ 15V
-
2V @ 10nA
7pF @ 15V
-
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2SK06630RL
Panasonic Electronic Components

JFET N-CH 30MA 150MW SMINI-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 55V
  • Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V
  • Current Drain (Id) - Max: 30mA
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 10µA
  • Input Capacitance (Ciss) (Max) @ Vds: 6.5pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
pacchetto: SC-70, SOT-323
Azione6.752
-
55V
1mA @ 10V
30mA
5V @ 10µA
6.5pF @ 10V
-
150mW
150°C (TJ)
Surface Mount
SC-70, SOT-323
SMini3-G1
2N4392UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.568
-
-
-
-
-
-
-
-
-
-
-
-
MCH3914-8-TL-H
ON Semiconductor

JFET N-CH 50MA 300MW MCPH3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 5V
  • Current Drain (Id) - Max: 50mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 10µA
  • Input Capacitance (Ciss) (Max) @ Vds: 4.9pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-MCPH
pacchetto: SC-70, SOT-323
Azione7.584
-
-
25mA @ 5V
50mA
600mV @ 10µA
4.9pF @ 5V
-
300mW
150°C (TJ)
Surface Mount
SC-70, SOT-323
3-MCPH
PMBFJ308,215
NXP

JFET N-CH 25V 250MW SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): 25V
  • Current - Drain (Idss) @ Vds (Vgs=0): 12mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 250mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23 (TO-236AB)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.200
25V
25V
12mA @ 10V
-
1V @ 1µA
5pF @ 10V
50 Ohm
250mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23 (TO-236AB)
SMMBFJ177LT1G
ON Semiconductor

TRANS JFET P-CH SOT23

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
  • Resistance - RDS(On): 300 Ohm
  • Power - Max: 225mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23 (TO-236AB)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.864
30V
-
1.5mA @ 15V
-
800mV @ 10nA
11pF @ 10V (VGS)
300 Ohm
225mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23 (TO-236AB)
2SK2145-Y(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH JFET 50V SMV

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
pacchetto: SC-74A, SOT-753
Azione26.616
-
-
1.2mA @ 10V
-
200mV @ 100nA
13pF @ 10V
-
300mW
125°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
hot MMBF5461
Fairchild/ON Semiconductor

JFET P-CH 40V 0.225W SOT23

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 225mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione36.108
40V
-
2mA @ 15V
-
1V @ 1µA
7pF @ 15V
-
225mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot MMBF4092
Fairchild/ON Semiconductor

JFET N-CH 40V 350MW SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione257.952
40V
-
15mA @ 20V
-
2V @ 1nA
16pF @ 20V
50 Ohm
350mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IFN201ST3TR
InterFET

JFET N-Channel -40V Low Ciss

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.1 V @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 850 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: -
Request a Quote
-
40 V
-
-
1.1 V @ 10 nA
-
850 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
2SK1578A-S
onsemi

NCH J-FET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SST202-SOT-23-3L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 40V SOT23-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 900 µA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: -
Azione17.127
40 V
-
900 µA @ 15 V
-
800 mV @ 10 nA
4.5pF @ 15V
-
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MV2N4091UB
Microchip Technology

JFET N-CH 40V 3UB

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 30 Ohms
  • Power - Max: 360 mW
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
Request a Quote
40 V
40 V
30 mA @ 20 V
-
-
16pF @ 20V
30 Ohms
360 mW
-65°C ~ 175°C (TJ)
Surface Mount
3-SMD, No Lead
UB
2SK315F-SPA-AC
onsemi

NCH J-FET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
LSK189-SOT-23-3L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 60V 10MA SOT23-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 60 V
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
  • Current Drain (Id) - Max: 10 mA
  • Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: -
Azione25.221
60 V
60 V
2.5 mA @ 15 V
10 mA
1.5 V @ 1 nA
8pF @ 15V
-
300 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N5277
Microchip Technology

JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
-
MQ2N5115UB
Microchip Technology

JFET P-CH 30V UB

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
  • Resistance - RDS(On): 100 Ohms
  • Power - Max: 500 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
Request a Quote
30 V
30 V
15 mA @ 15 V
-
3 V @ 1 nA
25pF @ 15V
100 Ohms
500 mW
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
MV2N4857UB-TR
Microchip Technology

JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
LSK489B-SOIC-8L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 60V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 60 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 500 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Azione327
60 V
-
2.5 mA @ 15 V
-
1.5 V @ 1 nA
8pF @ 15V
-
500 mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC