Pagina 37 - Transistor - JFET | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - JFET

Record 1.142
Pagina  37/41
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MX2N4860UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.056
-
-
-
-
-
-
-
-
-
-
-
-
MX2N4393
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.864
-
-
-
-
-
-
-
-
-
-
-
-
MV2N4857
Microsemi Corporation

N CHANNEL JFET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): 40V
  • Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 40 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione2.832
40V
40V
100mA @ 15V
-
6V @ 500pA
18pF @ 10V
40 Ohm
360mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
hot U431
Vishay Siliconix

JFET DUAL P-CH 25V TO-78

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 24mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
pacchetto: TO-78-6 Metal Can
Azione4.528
25V
-
24mA @ 10V
-
2V @ 1nA
5pF @ 10V
-
500mW
-55°C ~ 150°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
2N5114JTVL02
Vishay Siliconix

JFET P-CH 30V TO-206AA

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione4.736
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
2N4860JTXL02
Vishay Siliconix

JFET N-CH 30V TO-206

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione4.384
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
2N4857JTXV02
Vishay Siliconix

JFET N-CH 40V 360MA TO-18

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione5.232
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
J174,126
NXP

JFET P-CH 30V 400MW TO92-3

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
  • Resistance - RDS(On): 85 Ohm
  • Power - Max: 400mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione4.576
30V
30V
20mA @ 15V
-
5V @ 10nA
8pF @ 10V (VGS)
85 Ohm
400mW
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92
hot J202
Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 900µA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione159.360
40V
-
900µA @ 20V
-
800mV @ 10nA
-
-
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PN4093
Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 80 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione4.224
40V
-
8mA @ 20V
-
1V @ 1nA
16pF @ 20V
80 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJZ594JTF
Fairchild/ON Semiconductor

JFET N-CH 20V 0.1W SOT623F

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 20V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 150µA @ 5V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: SOT-623F
pacchetto: SOT-623F
Azione6.576
20V
-
150µA @ 5V
1mA
600mV @ 1µA
3.5pF @ 5V
-
100mW
150°C (TJ)
Surface Mount
SOT-623F
SOT-623F
2N4091UB
Microsemi Corporation

JFET N-CHAN 40V 3SMD

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): 40V
  • Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-UB (3.09x2.45)
pacchetto: 3-SMD, No Lead
Azione7.488
40V
40V
30mA @ 20V
-
-
16pF @ 20V
30 Ohm
360mW
-65°C ~ 175°C (TJ)
Surface Mount
3-SMD, No Lead
3-UB (3.09x2.45)
hot 2N4391
Central Semiconductor Corp

JFET N-CH 40V 150MA 1.8W TO18

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 20V
  • Current Drain (Id) - Max: 100pA
  • Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 1.8W
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione5.776
40V
-
150mA @ 20V
100pA
10V @ 1nA
14pF @ 20V
30 Ohm
1.8W
-65°C ~ 175°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
2SK3320-BL(TE85L,F
Toshiba Semiconductor and Storage

JFET DUAL N-CH USV

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 200mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
pacchetto: 5-TSSOP, SC-70-5, SOT-353
Azione4.000
-
-
6mA @ 10V
-
200mV @ 100nA
13pF @ 10V
-
200mW
125°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
hot MMBFJ175
Fairchild/ON Semiconductor

JFET P-CH 30V 0.225W SOT23

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 125 Ohm
  • Power - Max: 225mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione292.320
30V
-
7mA @ 15V
-
3V @ 10nA
-
125 Ohm
225mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BFR30,215
NXP

JFET N-CH 10MA 250MW SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 10V
  • Current Drain (Id) - Max: 10mA
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA
  • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 250mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23 (TO-236AB)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.376
-
25V
4mA @ 10V
10mA
5V @ 0.5nA
4pF @ 10V
-
250mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23 (TO-236AB)
NTE2937
NTE Electronics, Inc

JFET P-CH 30V TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5.5pF @ 10V
  • Resistance - RDS(On): 85 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
pacchetto: -
Request a Quote
30 V
-
20 mA @ 15 V
-
5 V @ 10 nA
5.5pF @ 10V
85 Ohms
350 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
U440-TO-71-6L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 25V TO71

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 25 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 500 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-71-6 Metal Can
  • Supplier Device Package: TO-71
pacchetto: -
Azione1.494
25 V
-
-
-
-
3pF @ 10V
-
500 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-71-6 Metal Can
TO-71
2N4857UB-TR
Microchip Technology

JFET N-CH 40V

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 40 Ohms
  • Power - Max: 360 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
Request a Quote
40 V
40 V
100 mA @ 15 V
-
6 V @ 500 pA
18pF @ 10V
40 Ohms
360 mW
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
2N4117A-TO-72-4L
Linear Integrated Systems, Inc.

JFET N-CH 40V TO72-4

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72-4
pacchetto: -
Azione4.461
40 V
-
30 µA @ 10 V
-
600 mV @ 1 nA
3pF @ 10V
-
300 mW
-
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72-4
MX2N4859UB-TR
Microchip Technology

JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SMP5485
InterFET

JFET N-Channel -25V Low Ciss

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
  • Resistance - RDS(On): 220 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: -
Request a Quote
-
25 V
6 mA @ 15 V
-
2.5 V @ 10 nA
3.5pF @ 15V
220 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
MMBF5484LT1
onsemi

SS N-CHAN 25V SOT23

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
LS320-TO-72-4L
Linear Integrated Systems, Inc.

JFET P-CH 25MA TO72-4

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: 25 mA
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 200 mW
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72-4
pacchetto: -
Azione1.287
-
20 V
-
25 mA
-
8pF @ 10V
-
200 mW
-55°C ~ 125°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72-4
MV2N5115UB
Microchip Technology

JFET P-CH 30V UB

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
  • Resistance - RDS(On): 100 Ohms
  • Power - Max: 500 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
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30 V
30 V
15 mA @ 15 V
-
3 V @ 1 nA
25pF @ 15V
100 Ohms
500 mW
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
SST94-SOT-89-3L-ROHS
Linear Integrated Systems, Inc.

JFET P-CH 25V SOT89-3

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 25 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 150 mV @ 100 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V
  • Resistance - RDS(On): 150 Ohms
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 135°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
pacchetto: -
Azione2.955
25 V
-
2.6 mA @ 10 V
-
150 mV @ 100 nA
105pF @ 10V
150 Ohms
400 mW
-55°C ~ 135°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
PN4393-TO-92-3L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 40V TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 100 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
pacchetto: -
Azione2.973
40 V
-
-
-
-
16pF @ 20V
100 Ohms
350 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
MV2N4393UB-TR
Microchip Technology

JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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