Pagina 26 - Transistor - JFET | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - JFET

Record 1.142
Pagina  26/41
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot J112
Central Semiconductor Corp

JFET N-CHAN 35V TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V (VGS)
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione128.244
35V
-
5mA @ 15V
-
5V @ 1µA
5pF @ 10V (VGS)
50 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
U310-E3
Vishay Siliconix

JFET P-CH 25V TO-52

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 24mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AC, TO-52-3 Metal Can
  • Supplier Device Package: TO-206AC (TO-52)
pacchetto: TO-206AC, TO-52-3 Metal Can
Azione7.344
25V
-
24mA @ 10V
-
2.5V @ 1nA
5pF @ 10V
-
500mW
-55°C ~ 150°C (TJ)
Through Hole
TO-206AC, TO-52-3 Metal Can
TO-206AC (TO-52)
hot SST5462-T1-E3
Vishay Siliconix

JFET P-CH 55V 4MA SOT-23

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione75.948
40V
-
4mA @ 15V
-
1.8V @ 1µA
7pF @ 15V
-
350mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot SST204-T1-E3
Vishay Siliconix

JFET N-CH 25V 0.35W SOT-23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione36.000
25V
-
200µA @ 15V
-
300mV @ 10nA
4.5pF @ 15V
-
350mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot 2N5116
Vishay Siliconix

JFET P-CH 30V TO-18

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione13.440
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
2N4856JTX02
Vishay Siliconix

MOSFET N-CH 40V 50MA TO-18

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione3.536
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
2SK715W-AC
ON Semiconductor

JFET N-CH 50MA 300MW SPA

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 15V
  • Current - Drain (Idss) @ Vds (Vgs=0): 14.5mA @ 5V
  • Current Drain (Id) - Max: 50mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-72
  • Supplier Device Package: 3-SPA
pacchetto: SC-72
Azione7.008
-
15V
14.5mA @ 5V
50mA
600mV @ 100µA
10pF @ 5V
-
300mW
125°C (TJ)
Through Hole
SC-72
3-SPA
EC3A04B-3-TL-H
ON Semiconductor

JFET N-CH 10MA 100MW ECSP1006-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
  • Current Drain (Id) - Max: 10mA
  • Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
  • Resistance - RDS(On): 200 Ohm
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: 3-ECSP1006
pacchetto: 3-XFDFN
Azione6.192
-
30V
1.2mA @ 10V
10mA
180mV @ 1µA
4pF @ 10V
200 Ohm
100mW
150°C (TJ)
Surface Mount
3-XFDFN
3-ECSP1006
2SK3372GRL
Panasonic Electronic Components

JFET N-CH 2MA 100MW SSSMINI-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Drain (Idss) @ Vds (Vgs=0): 107µA @ 2V
  • Current Drain (Id) - Max: 2mA
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: -20°C ~ 80°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SSSMini3-F2
pacchetto: SOT-723
Azione3.200
-
20V
107µA @ 2V
2mA
-
-
-
100mW
-20°C ~ 80°C (TA)
Surface Mount
SOT-723
SSSMini3-F2
J111RLRPG
ON Semiconductor

JFET N-CH 35V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.872
35V
-
20mA @ 15V
-
3V @ 1µA
-
30 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2N5639G
ON Semiconductor

JFET N-CH 35V 0.31W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
  • Resistance - RDS(On): 60 Ohm
  • Power - Max: 310mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione4.848
35V
30V
25mA @ 20V
-
-
10pF @ 12V (VGS)
60 Ohm
310mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot MMBF5460LT1G
ON Semiconductor

JFET P-CH 40V 0.225W SOT23

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 750mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 225mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione39.240
40V
-
1mA @ 15V
-
750mV @ 1µA
7pF @ 15V
-
225mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
PMBF4392,215
NXP

JFET N-CH 40V 250MW SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): 40V
  • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • Resistance - RDS(On): -
  • Power - Max: 250mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23 (TO-236AB)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.312
40V
40V
25mA @ 20V
-
2V @ 1nA
14pF @ 20V
-
250mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23 (TO-236AB)
hot 2SK2394-6-TB-E
ON Semiconductor

JFET N-CH 50MA 200MW CP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 15V
  • Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 5V
  • Current Drain (Id) - Max: 50mA
  • Voltage - Cutoff (VGS off) @ Id: 300mV @ 100µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 200mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione348.000
-
15V
10mA @ 5V
50mA
300mV @ 100µA
10pF @ 5V
-
200mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
JANTX2N4091
Microsemi Corporation

JFET N-CH 40V 360MW TO-18

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): 40V
  • Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione5.952
40V
40V
30mA @ 20V
-
-
16pF @ 20V
30 Ohm
360mW
-65°C ~ 175°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
J112_D27Z
Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione5.232
35V
-
5mA @ 15V
-
1V @ 1µA
-
50 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2SK880-BL(TE85L,F)
Toshiba Semiconductor and Storage

JFET N-CH 50V 0.1W USM

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 50V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
pacchetto: SC-70, SOT-323
Azione25.356
50V
-
6mA @ 10V
-
1.5V @ 100nA
13pF @ 10V
-
100mW
125°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
hot MMBF4393LT1G
ON Semiconductor

JFET N-CH 30V 0.225W SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
  • Resistance - RDS(On): 100 Ohm
  • Power - Max: 225mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.788.800
30V
30V
5mA @ 15V
-
500mV @ 10nA
14pF @ 15V
100 Ohm
225mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
LSK489A-SOT-23-6L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 60V SOT23-6

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 60 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 500 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacchetto: -
Azione16.536
60 V
-
2.5 mA @ 15 V
-
1.5 V @ 1 nA
8pF @ 15V
-
500 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
LS5912-SOIC-8L-B
Linear Integrated Systems, Inc.

JFET 2N-CH 25V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 25 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 500 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Azione252
25 V
-
7 mA @ 10 V
-
1 V @ 1 nA
5pF @ 10V
-
500 mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
2N4861UB
Microchip Technology

JFET N-CH 30V UB

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 60 Ohms
  • Power - Max: 360 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
Request a Quote
30 V
30 V
8 mA @ 15 V
-
800 mV @ 500 pA
18pF @ 10V
60 Ohms
360 mW
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
LSK389ASOIC8LTB-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 40V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Azione801
40 V
-
2.6 mA @ 10 V
-
300 mV @ 100 nA
25pF @ 10V
-
400 mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MX2N5114UB
Microchip Technology

JFET P-CH 30V UB

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
  • Resistance - RDS(On): 75 Ohms
  • Power - Max: 500 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
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30 V
30 V
30 mA @ 18 V
-
5 V @ 1 nA
25pF @ 15V
75 Ohms
500 mW
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
MX2N4092UB
Microchip Technology

JFET N-CH 40V 3UB

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 50 Ohms
  • Power - Max: 360 mW
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
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40 V
40 V
15 mA @ 20 V
-
-
16pF @ 20V
50 Ohms
360 mW
-65°C ~ 175°C (TJ)
Surface Mount
3-SMD, No Lead
UB
NTE469
NTE Electronics, Inc

JFET N-CH 35V TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35 V
  • Drain to Source Voltage (Vdss): 35 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
  • Resistance - RDS(On): 100 Ohms
  • Power - Max: 625 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
pacchetto: -
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35 V
35 V
2 mA @ 15 V
-
-
5pF @ 10V
100 Ohms
625 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
NTE461
NTE Electronics, Inc

JFET 2N-CH 50V TO71

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 50 V
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500 mV @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-71-6 Metal Can
  • Supplier Device Package: TO-71
pacchetto: -
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50 V
50 V
500 µA @ 15 V
-
500 mV @ 500 pA
6pF @ 15V
-
-
-
Through Hole
TO-71-6 Metal Can
TO-71
2N5114-TO-18-3L-ROHS
Linear Integrated Systems, Inc.

JFET P-CH 30V TO18-3

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
  • Resistance - RDS(On): 75 Ohms
  • Power - Max: 500 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18-3
pacchetto: -
Azione1.098
30 V
-
-
-
-
25pF @ 15V
75 Ohms
500 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18-3
SST310-SOT-23-3L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 25V SOT23-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
  • Resistance - RDS(On): 35 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: -
Azione32.520
25 V
-
-
-
-
4pF @ 10V
35 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3