Pagina 24 - Transistor - JFET | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - JFET

Record 1.142
Pagina  24/41
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TF252TH-4A-TL-H
ON Semiconductor

JFET N-CH 1MA 100MW

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: VTFP
pacchetto: 3-SMD, Flat Leads
Azione7.584
-
-
140µA @ 2V
1mA
100mV @ 1µA
3.1pF @ 2V
-
100mW
-
Surface Mount
3-SMD, Flat Leads
VTFP
TF202THC-L5-TL-H
ON Semiconductor

JFET N-CH 1MA 100MW

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 5V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 200mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: VTFP
pacchetto: 3-SMD, Flat Leads
Azione3.104
-
-
210µA @ 5V
1mA
200mV @ 1µA
3.5pF @ 5V
-
100mW
-
Surface Mount
3-SMD, Flat Leads
VTFP
2N5114-E3
Vishay Siliconix

JFET P-CH 30V TO-206AA

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione3.808
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
2N4861JAN02
Vishay Siliconix

JFET N-CH 30V TO-206

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione3.344
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
hot 2N4393-E3
Vishay Siliconix

MOSFET N-CH 40V .1NA TO-18

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • Resistance - RDS(On): 100 Ohm
  • Power - Max: 1.8W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione6.400
40V
-
5mA @ 20V
-
500mV @ 1nA
14pF @ 20V
100 Ohm
1.8W
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
J202_D74Z
Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 900µA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.400
40V
-
900µA @ 20V
-
800mV @ 10nA
-
-
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
J113_D27Z
Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 100 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.288
35V
-
2mA @ 15V
-
500mV @ 1µA
-
100 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJZ594JCTF
Fairchild/ON Semiconductor

JFET N-CH 20V 0.1W SOT623F

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 20V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 150µA @ 5V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: SOT-623F
pacchetto: SOT-623F
Azione4.112
20V
-
150µA @ 5V
1mA
600mV @ 1µA
3.5pF @ 5V
-
100mW
150°C (TJ)
Surface Mount
SOT-623F
SOT-623F
FJN598JBBU
Fairchild/ON Semiconductor

JFET N-CH 20V 0.15W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 20V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione6.352
20V
-
100µA @ 5V
1mA
600mV @ 1µA
3.5pF @ 5V
-
150mW
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BF247A
Fairchild/ON Semiconductor

JFET N-CH 25V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione2.112
25V
-
30mA @ 15V
-
600mV @ 100nA
-
-
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2N5461_D74Z
Fairchild/ON Semiconductor

JFET P-CH 40V 0.35W TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione4.048
40V
-
2mA @ 15V
-
1V @ 1µA
7pF @ 15V
-
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot 2N5457
Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione102.144
25V
-
1mA @ 15V
-
500mV @ 10nA
7pF @ 15V
-
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
CP210-2N4416-CT20
Central Semiconductor Corp

TRANS JFET NCH 1=20PCS

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione4.768
30V
30V
5mA @ 20V
-
6V @ 1nA
4pF @ 15V
-
-
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die
TF412ST5G
ON Semiconductor

JFET N-CH 30V 0.1W SOT-883 XDFN3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
  • Current Drain (Id) - Max: 10mA
  • Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
pacchetto: 3-XFDFN
Azione5.376
30V
30V
1.2mA @ 10V
10mA
180mV @ 1µA
4pF @ 10V
-
100mW
150°C (TJ)
Surface Mount
3-XFDFN
SOT-883 (XDFN3) (1x0.6)
J112_D26Z
Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione17.394
35V
-
5mA @ 15V
-
1V @ 1µA
-
50 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
SMP5486TR
InterFET

JFET N-Channel -25V Low Ciss

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
  • Resistance - RDS(On): 150 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: -
Request a Quote
-
25 V
12 mA @ 15 V
-
4 V @ 10 nA
3.5pF @ 15V
150 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
MV2N4861UB-TR
Microchip Technology

JFET N-CH 30V UB

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 60 Ohms
  • Power - Max: 360 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
Request a Quote
30 V
30 V
8 mA @ 15 V
-
800 mV @ 500 pA
18pF @ 10V
60 Ohms
360 mW
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
MQ2N2608
Microchip Technology

JFET P-CH 30V 5MA TO18

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
  • Current Drain (Id) - Max: 5 mA
  • Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
pacchetto: -
Request a Quote
30 V
-
1 mA @ 5 V
5 mA
6 V @ 1 µA
10pF @ 5V
-
300 mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
J174-TO-92-3L-ROHS
Linear Integrated Systems, Inc.

JFET P-CH 30V TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 85 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 135°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
pacchetto: -
Azione8.478
30 V
-
-
-
-
-
85 Ohms
350 mW
-55°C ~ 135°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
BSV79
Central Semiconductor Corp

JFET N-CH TO18

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
  • Resistance - RDS(On): 40 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
pacchetto: -
Request a Quote
-
40 V
20 mA @ 15 V
-
2 V @ 1 nA
5pF @ 10V
40 Ohms
350 mW
-65°C ~ 175°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
LSK489-SOIC-8L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 60V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 60 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 500 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Azione798
60 V
-
2.5 mA @ 15 V
-
1.5 V @ 1 nA
8pF @ 15V
-
500 mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
CP216-2N4856-CM
Central Semiconductor Corp

JFET N-CH 40V 50MA DIE

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
  • Current Drain (Id) - Max: 50 mA
  • Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Resistance - RDS(On): 25 Ohms
  • Power - Max: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Request a Quote
40 V
40 V
50 mA @ 15 V
50 mA
4 V @ 0.5 nA
18pF @ 10V
25 Ohms
-
-65°C ~ 175°C (TJ)
Surface Mount
Die
Die
2N4392UB-TR
Microchip Technology

JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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-
-
-
-
-
-
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LSK389B-SOIC-8L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 40V 10MA 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
  • Current Drain (Id) - Max: 10 mA
  • Voltage - Cutoff (VGS off) @ Id: 300 mV @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Azione13.941
40 V
40 V
6 mA @ 10 V
10 mA
300 mV @ 1 µA
25pF @ 10V
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400 mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
2N4091UB-TR
Microchip Technology

JFET N-CH 40V 3UB

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 30 Ohms
  • Power - Max: 360 mW
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
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40 V
40 V
30 mA @ 20 V
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16pF @ 20V
30 Ohms
360 mW
-65°C ~ 175°C (TJ)
Surface Mount
3-SMD, No Lead
UB
MMBF4392LT1
onsemi

JFET SS N-CHAN 30V SOT23

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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IFN160BST3
InterFET

JFET N-Channel -50V Low Ciss

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 330 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: -
Request a Quote
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50 V
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1 V @ 10 µA
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330 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
LSK489A-SOIC-8L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 60V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 60 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 500 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Azione261
60 V
-
2.5 mA @ 15 V
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1.5 V @ 1 nA
8pF @ 15V
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500 mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC