Pagina 959 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  959/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IPD60R950C6
Infineon Technologies

MOSFET N-CH 600V 4.4A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione68.400
MOSFET (Metal Oxide)
600V
4.4A (Tc)
10V
3.5V @ 130µA
13nC @ 10V
280pF @ 100V
±20V
-
37W (Tc)
950 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IRF620B_FP001
Fairchild/ON Semiconductor

MOSFET N-CH 200V 5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione2.688
MOSFET (Metal Oxide)
200V
5A (Tc)
10V
4V @ 250µA
16nC @ 10V
390pF @ 25V
±30V
-
47W (Tc)
800 mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FDS6064N3
Fairchild/ON Semiconductor

MOSFET N-CH 20V 23A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 7191pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 23A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.656
MOSFET (Metal Oxide)
20V
23A (Ta)
1.8V, 4.5V
1.5V @ 250µA
98nC @ 4.5V
7191pF @ 10V
±8V
-
3W (Ta)
4 mOhm @ 23A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRC530PBF
Vishay Siliconix

MOSFET N-CH 100V 14A TO-220-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-5
  • Package / Case: TO-220-5
pacchetto: TO-220-5
Azione5.760
MOSFET (Metal Oxide)
100V
14A (Tc)
10V
4V @ 250µA
26nC @ 10V
700pF @ 25V
±20V
Current Sensing
88W (Tc)
160 mOhm @ 8.4A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-5
TO-220-5
IXFR14N100Q2
IXYS

MOSFET N-CH 1KV 9.5A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
pacchetto: ISOPLUS247?
Azione7.808
MOSFET (Metal Oxide)
1000V
9.5A (Tc)
10V
5V @ 4mA
83nC @ 10V
2700pF @ 25V
±30V
-
200W (Tc)
1.1 Ohm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
hot IXTH16N10D2
IXYS

MOSFET N-CH 100V 16A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 830W (Tc)
  • Rds On (Max) @ Id, Vgs: 64 mOhm @ 8A, 0V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione145.356
MOSFET (Metal Oxide)
100V
16A (Tc)
0V
-
225nC @ 5V
5700pF @ 25V
±20V
Depletion Mode
830W (Tc)
64 mOhm @ 8A, 0V
-55°C ~ 175°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
IXTA2N100P
IXYS

MOSFET N-CH 1000V 2A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.376
MOSFET (Metal Oxide)
1000V
2A (Tc)
10V
4.5V @ 100µA
24.3nC @ 10V
655pF @ 25V
±20V
-
86W (Tc)
7.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS4C705NT1G
ON Semiconductor

MOSFET N-CH 30V SO8FL

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione3.280
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVTFS5124PLTWG
ON Semiconductor

MOSFET P-CH 60V 8A U8FL

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 18W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione3.296
MOSFET (Metal Oxide)
60V
2.4A (Ta)
4.5V, 10V
2.5V @ 250µA
6nC @ 10V
250pF @ 25V
±20V
-
3W (Ta), 18W (Tc)
260 mOhm @ 3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
hot TSM2301ACX RFG
TSC America Inc.

MOSFET, SINGLE, P-CHANNEL, -20V,

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione36.000
MOSFET (Metal Oxide)
20V
2.8A (Tc)
2.5V, 4.5V
1V @ 250µA
4.5nC @ 4.5V
480pF @ 15V
±12V
-
700mW (Ta)
130 mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
IXTK120N25P
IXYS

MOSFET N-CH 250V 120A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
pacchetto: TO-264-3, TO-264AA
Azione7.392
MOSFET (Metal Oxide)
250V
120A (Tc)
10V
5V @ 500µA
185nC @ 10V
8000pF @ 25V
±20V
-
700W (Tc)
24 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
STF28N60M2
STMicroelectronics

MOSFET N-CH 600V 24A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione3.616
MOSFET (Metal Oxide)
600V
24A (Tc)
10V
4V @ 250µA
37nC @ 10V
1370pF @ 100V
±25V
-
30W (Tc)
150 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot IRFZ44ZPBF
Infineon Technologies

MOSFET N-CH 55V 51A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione22.740
MOSFET (Metal Oxide)
55V
51A (Tc)
10V
4V @ 250µA
43nC @ 10V
1420pF @ 25V
±20V
-
80W (Tc)
13.9 mOhm @ 31A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
NVMFS5C404NLWFT1G
ON Semiconductor

MOSFET N-CH 40V 49A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12168pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione3.344
MOSFET (Metal Oxide)
40V
49A (Ta), 352A (Tc)
4.5V, 10V
2V @ 250µA
181nC @ 10V
12168pF @ 25V
±20V
-
3.9W (Ta), 200W (Tc)
0.75 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot SI4134DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 14A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione965.232
MOSFET (Metal Oxide)
30V
14A (Tc)
10V
2.5V @ 250µA
23nC @ 10V
846pF @ 15V
±20V
-
2.5W (Ta), 5W (Tc)
14 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
FDZ391P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3A 6-WLCSP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WLCSP (1.0x1.5)
  • Package / Case: 6-XFBGA, WLCSP
pacchetto: 6-XFBGA, WLCSP
Azione7.872
MOSFET (Metal Oxide)
20V
3A (Ta)
1.5V, 4.5V
1.5V @ 250µA
13nC @ 4.5V
1065pF @ 10V
±8V
-
1.9W (Ta)
85 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-WLCSP (1.0x1.5)
6-XFBGA, WLCSP
IXTH10P60
IXYS

MOSFET P-CH 600V 10A TO-247AD

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione5.776
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
5V @ 250µA
160nC @ 10V
4700pF @ 25V
±20V
-
300W (Tc)
1 Ohm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
NTHL185N60S5H
onsemi

SUPERFET5 FAST 185MOHM TO-247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 116W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
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MOSFET (Metal Oxide)
600 V
15A (Tc)
10V
4.3V @ 1.4mA
25 nC @ 10 V
1350 pF @ 400 V
±30V
-
116W (Tc)
185mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IPT60R040S7XTMA1
Infineon Technologies

MOSFET N-CH 600V 13A 8HSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-2
  • Package / Case: 8-PowerSFN
pacchetto: -
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MOSFET (Metal Oxide)
600 V
13A (Tc)
12V
4.5V @ 790µA
83 nC @ 12 V
3127 pF @ 300 V
±20V
-
245W (Tc)
40mOhm @ 13A, 12V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-2
8-PowerSFN
AON7566
Alpha & Omega Semiconductor Inc.

MOSFET N-CHANNEL 30V 34A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN-EP (3x3)
  • Package / Case: 8-PowerVDFN
pacchetto: -
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MOSFET (Metal Oxide)
30 V
34A (Tc)
4.5V, 10V
2.4V @ 250µA
80 nC @ 10 V
3020 pF @ 15 V
±20V
-
30W (Tc)
3.7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
TK16J60W-S1VE
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: -
Azione126
MOSFET (Metal Oxide)
600 V
15.8A (Ta)
10V
3.7V @ 790µA
38 nC @ 10 V
1350 pF @ 300 V
±30V
-
130W (Tc)
190mOhm @ 7.9A, 10V
150°C
Through Hole
TO-3P(N)
TO-3P-3, SC-65-3
PJQ1917_R1_00001
Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1006-3
  • Package / Case: 3-UFDFN
pacchetto: -
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MOSFET (Metal Oxide)
20 V
700mA (Ta)
1.2V, 4.5V
1V @ 250µA
1.1 nC @ 4.5 V
51 pF @ 10 V
±8V
-
500mW (Ta)
600mOhm @ 300mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006-3
3-UFDFN
DMN3009LFVQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
pacchetto: -
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MOSFET (Metal Oxide)
30 V
60A (Tc)
4.5V, 10V
3V @ 250µA
42 nC @ 10 V
2000 pF @ 15 V
±20V
-
1W (Ta)
5.5mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
MFT10N168AT263
Meritek

MOSFET 100V 168A 188W N-CHANNEL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 168A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 50 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 50 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
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MOSFET (Metal Oxide)
100 V
168A (Ta)
-
-
88 nC @ 50 V
3230 pF @ 50 V
-
-
-
-
-
-
-
-
TK6R7A10PL-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione153
MOSFET (Metal Oxide)
100 V
56A (Tc)
4.5V, 10V
2.5V @ 500µA
58 nC @ 10 V
3455 pF @ 50 V
±20V
-
42W (Tc)
6.7mOhm @ 28A, 10V
175°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
BSF030NE2LQXUMA1
Infineon Technologies

MOSFET N-CH 25V 24A/75A 2WDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MG-WDSON-2, CanPAK M™
  • Package / Case: 3-WDSON
pacchetto: -
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MOSFET (Metal Oxide)
25 V
24A (Ta), 75A (Tc)
4.5V, 10V
2V @ 250µA
23 nC @ 10 V
1700 pF @ 12 V
±20V
-
2.2W (Ta), 28W (Tc)
3mOhm @ 30A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
MG-WDSON-2, CanPAK M™
3-WDSON
DMT10H009LCG-7
Diodes Incorporated

MOSFET N-CH 100V 12.4A/47A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: V-DFN3333-8 (Type B)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione9.426
MOSFET (Metal Oxide)
100 V
12.4A (Ta), 47A (Tc)
4.5V, 10V
2.5V @ 250µA
20.2 nC @ 4.5 V
2309 pF @ 50 V
±20V
-
1W (Ta)
8.8mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
V-DFN3333-8 (Type B)
8-PowerVDFN
GS120R033Q4A
Goford Semiconductor

SiC MOSFET N-CH 1200V 69A TO-24

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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