Pagina 925 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  925/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
GP1M005A050FH
Global Power Technologies Group

MOSFET N-CH 500V 4.5A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 627pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.65 Ohm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione4.128
MOSFET (Metal Oxide)
500V
4.5A (Tc)
10V
4V @ 250µA
11nC @ 10V
627pF @ 25V
±30V
-
32W (Tc)
1.65 Ohm @ 2.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot 3N163
Vishay Siliconix

MOSFET P-CH 40V 50MA TO-72

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 5V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 375mW (Ta)
  • Rds On (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-72
  • Package / Case: TO-206AF, TO-72-4 Metal Can
pacchetto: TO-206AF, TO-72-4 Metal Can
Azione4.912
MOSFET (Metal Oxide)
40V
50mA (Ta)
20V
5V @ 10µA
-
3.5pF @ 15V
±30V
-
375mW (Ta)
250 Ohm @ 100µA, 20V
-55°C ~ 150°C (TJ)
Through Hole
TO-72
TO-206AF, TO-72-4 Metal Can
NVTJD4158CT1G
ON Semiconductor

MOSFET P-CH 20V 0.88A SC-88

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-88/SC70-6/SOT-363
  • Package / Case: 6-TSSOP, SC-88, SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione5.008
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
SC-88/SC70-6/SOT-363
6-TSSOP, SC-88, SOT-363
APTM50UM19SG
Microsemi Corporation

MOSFET N-CH 500V 163A J3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 163A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1136W (Tc)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 81.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: Module
  • Package / Case: J3 Module
pacchetto: J3 Module
Azione7.344
MOSFET (Metal Oxide)
500V
163A
10V
5V @ 10mA
492nC @ 10V
22400pF @ 25V
±30V
-
1136W (Tc)
19 mOhm @ 81.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
J3 Module
NTMFS4841NT3G
ON Semiconductor

MOSFET N-CH 30V 8.3A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1436pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione6.032
MOSFET (Metal Oxide)
30V
8.3A (Ta), 57A (Tc)
4.5V, 10V
2.5V @ 250µA
17nC @ 4.5V
1436pF @ 12V
±20V
-
870mW (Ta), 41.7W (Tc)
7 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot STI23NM60ND
STMicroelectronics

MOSFET N-CH 600V 19.5A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione7.648
MOSFET (Metal Oxide)
600V
19.5A (Tc)
10V
5V @ 250µA
70nC @ 10V
2050pF @ 50V
±25V
-
150W (Tc)
180 mOhm @ 10A, 10V
150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
IPB65R095C7ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 590µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.888
MOSFET (Metal Oxide)
650V
24A (Tc)
10V
4V @ 590µA
45nC @ 10V
2140pF @ 400V
±20V
-
128W (Tc)
95 mOhm @ 11.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IXKH47N60C
IXYS

MOSFET N-CH 600V 47A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 650nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXKH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione5.024
MOSFET (Metal Oxide)
600V
47A (Tc)
10V
4V @ 2mA
650nC @ 10V
-
±20V
Super Junction
-
70 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXKH)
TO-247-3
IXTP12N50PM
IXYS

MOSFET N-CH 500V 6A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione7.440
MOSFET (Metal Oxide)
500V
6A (Tc)
10V
5.5V @ 250µA
29nC @ 10V
1830pF @ 25V
±30V
-
50W (Tc)
500 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
DMP3026SFDF-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1204pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
pacchetto: 6-UDFN Exposed Pad
Azione3.024
MOSFET (Metal Oxide)
30V
10.3A (Ta)
4V, 10V
3V @ 250µA
19.6nC @ 10V
1204pF @ 15V
±25V
-
2W (Ta)
19 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
5HP01SS-TL-H
ON Semiconductor

MOSFET P-CH 50V 70MA SSFP

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-SSFP
  • Package / Case: 3-SMD, Flat Leads
pacchetto: 3-SMD, Flat Leads
Azione6.240
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
3-SSFP
3-SMD, Flat Leads
hot STD26P3LLH6
STMicroelectronics

MOSFET P-CH 30V 12A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione120.012
MOSFET (Metal Oxide)
30V
12A (Tc)
4.5V, 10V
2.5V @ 250µA
12nC @ 4.5V
1450pF @ 25V
±20V
-
40W (Tc)
30 mOhm @ 6A, 10V
175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot BUZ32 H
Infineon Technologies

MOSFET N-CH 200V 9.5A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione390.000
MOSFET (Metal Oxide)
200V
9.5A (Tc)
10V
4V @ 1mA
-
530pF @ 25V
±20V
-
75W (Tc)
400 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
STW57N65M5-4
STMicroelectronics

MOSFET N CH 650V 42A TO247-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
pacchetto: TO-247-4
Azione6.224
MOSFET (Metal Oxide)
650V
42A (Tc)
10V
5V @ 250µA
98nC @ 10V
4200pF @ 100V
±25V
-
250W (Tc)
63 mOhm @ 21A, 10V
150°C (TJ)
Through Hole
TO-247-4L
TO-247-4
hot FDPF14N30
Fairchild/ON Semiconductor

MOSFET NCH 300V 14A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione287.796
MOSFET (Metal Oxide)
300V
14A (Tc)
10V
5V @ 250µA
25nC @ 10V
1060pF @ 25V
±30V
-
35W (Tc)
290 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FQA90N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 90A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione247.464
MOSFET (Metal Oxide)
80V
90A (Tc)
10V
4V @ 250µA
110nC @ 10V
3250pF @ 25V
±25V
-
214W (Tc)
16 mOhm @ 45A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
hot SI5403DC-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 6A 1206-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione81.588
MOSFET (Metal Oxide)
30V
6A (Tc)
4.5V, 10V
3V @ 250µA
42nC @ 10V
1340pF @ 15V
±20V
-
2.5W (Ta), 6.3W (Tc)
30 mOhm @ 7.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
1206-8 ChipFET?
8-SMD, Flat Lead
hot STB80NF55L-08-1
STMicroelectronics

MOSFET N-CH 55V 80A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione196.248
MOSFET (Metal Oxide)
55V
80A (Tc)
5V, 10V
2.5V @ 250µA
100nC @ 4.5V
4350pF @ 25V
±16V
-
300W (Tc)
8 mOhm @ 40A, 10V
175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
PSMN4R3-80PS,127
Nexperia USA Inc.

MOSFET N-CH 80V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8161pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 306W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione27.996
MOSFET (Metal Oxide)
80V
120A (Tc)
10V
4V @ 1mA
111nC @ 10V
8161pF @ 40V
±20V
-
306W (Tc)
4.3 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPD90P03P404ATMA1
Infineon Technologies

MOSFET P-CH 30V 90A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 253µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 137W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione615.552
MOSFET (Metal Oxide)
30V
90A (Tc)
10V
4V @ 253µA
130nC @ 10V
10300pF @ 25V
±20V
-
137W (Tc)
4.5 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDC653N
Fairchild/ON Semiconductor

MOSFET N-CH 30V 5A SSOT-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT?-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione1.659.636
MOSFET (Metal Oxide)
30V
5A (Ta)
4.5V, 10V
2V @ 250µA
17nC @ 10V
350pF @ 15V
±20V
-
1.6W (Ta)
35 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT?-6
SOT-23-6 Thin, TSOT-23-6
NVBG160N120SC1
onsemi

SICFET N-CH 1200V 19.5A D2PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
  • Vgs (Max): +25V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacchetto: -
Azione2.355
SiCFET (Silicon Carbide)
1200 V
19.5A (Tc)
20V
4.3V @ 2.5mA
33.8 nC @ 20 V
678 pF @ 800 V
+25V, -15V
-
136W (Tc)
224mOhm @ 12A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SIHG70N60AEF-GE3
Vishay Siliconix

MOSFET N-CH 600V 60A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5348 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
pacchetto: -
Azione1.041
MOSFET (Metal Oxide)
600 V
60A (Tc)
10V
4V @ 250µA
410 nC @ 10 V
5348 pF @ 100 V
±20V
-
417W (Tc)
41mOhm @ 35A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
NTTFS1D8N02P1E
onsemi

MOSFET N-CH 25V 20A/152A 8PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 152A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3159 pF @ 13 V
  • Vgs (Max): +16V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: -
Azione6.249
MOSFET (Metal Oxide)
25 V
20A (Ta), 152A (Tc)
4.5V, 10V
2V @ 700µA
38 nC @ 10 V
3159 pF @ 13 V
+16V, -12V
-
800mW (Ta), 48W (Tc)
1.3mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (3.3x3.3)
8-PowerWDFN
DMPH33M8SPSW-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V PowerDI506

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type Q)
  • Package / Case: 8-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
100A (Tc)
6V, 10V
3V @ 250µA
127 nC @ 10 V
3775 pF @ 15 V
±20V
-
1.7W (Ta)
3.8mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type Q)
8-PowerTDFN
NVTYS020N08HLTWG
onsemi

T8 80V N-CH LL IN LFPAK33 PACKAG

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 610.5 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-LFPAK
  • Package / Case: SOT-1205, 8-LFPAK56
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
80 V
8.1A (Ta)
4.5V, 10V
2V @ 30µA
12 nC @ 10 V
610.5 pF @ 40 V
±20V
-
3.2W (Ta), 42W (Tc)
20mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-LFPAK
SOT-1205, 8-LFPAK56
UPA1911ATE-T1-A
Renesas Electronics Corporation

MOSFET P-CH 20V SC-95

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-95-6, Mini Mold Thin
  • Package / Case: SC-95-6
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
-
1.5V @ 1mA
2.3 nC @ 4 V
370 pF @ 10 V
-
-
-
115mOhm @ 1.5A, 4.5V
-
Surface Mount
SC-95-6, Mini Mold Thin
SC-95-6
RJK03P1DPA-00-J5A
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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