Pagina 916 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  916/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPB26CN10NGATMA1
Infineon Technologies

MOSFET N-CH 100V 35A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 39µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.576
MOSFET (Metal Oxide)
100V
35A (Tc)
10V
4V @ 39µA
31nC @ 10V
2070pF @ 50V
±20V
-
71W (Tc)
26 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JANTX2N6762
Microsemi Corporation

MOSFET N-CH TO-204AA TO-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-204AA (TO-3)
  • Package / Case: TO-204AA, TO-3
pacchetto: TO-204AA, TO-3
Azione3.504
MOSFET (Metal Oxide)
500V
4.5A (Tc)
10V
4V @ 250µA
40nC @ 10V
-
±20V
-
4W (Ta), 75W (Tc)
1.8 Ohm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-204AA (TO-3)
TO-204AA, TO-3
RJK5030DPD-00#J2
Renesas Electronics America

MOSFET N-CH 500V 5A MP3A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 41.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.872
MOSFET (Metal Oxide)
500V
5A (Ta)
10V
-
-
550pF @ 25V
±30V
-
41.7W (Tc)
1.6 Ohm @ 2A, 10V
150°C (TJ)
Surface Mount
MP-3A
TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3868(Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 5A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione4.256
MOSFET (Metal Oxide)
500V
5A (Ta)
10V
4V @ 1mA
16nC @ 10V
550pF @ 25V
±30V
-
35W (Tc)
1.7 Ohm @ 2.5A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
NTD14N03R-001
ON Semiconductor

MOSFET N-CH 25V 2.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione3.776
MOSFET (Metal Oxide)
25V
2.5A (Ta)
4.5V, 10V
2V @ 250µA
1.8nC @ 5V
115pF @ 20V
±20V
-
1.04W (Ta), 20.8W (Tc)
95 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
APTM20DAM05G
Microsemi Corporation

MOSFET N-CH 200V 317A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 317A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1136W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
pacchetto: SP6
Azione6.128
MOSFET (Metal Oxide)
200V
317A
10V
5V @ 10mA
448nC @ 10V
27400pF @ 25V
±30V
-
1136W (Tc)
6 mOhm @ 158.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
hot IXTH6N150
IXYS

MOSFET N-CH 1500V 6A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione4.064
MOSFET (Metal Oxide)
1500V
6A (Tc)
10V
5V @ 250µA
67nC @ 10V
2230pF @ 25V
±20V
-
540W (Tc)
3.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
IXFH10N80P
IXYS

MOSFET N-CH 800V 10A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione2.432
MOSFET (Metal Oxide)
800V
10A (Tc)
10V
5.5V @ 2.5mA
40nC @ 10V
2050pF @ 25V
±30V
-
300W (Tc)
1.1 Ohm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot NTMFS4H01NT1G
ON Semiconductor

MOSFET N-CH 25V 54A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 334A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5693pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione6.752
MOSFET (Metal Oxide)
25V
54A (Ta), 334A (Tc)
4.5V, 10V
2.1V @ 250µA
85nC @ 10V
5693pF @ 12V
±20V
-
3.2W (Ta), 125W (Tc)
0.7 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
BUK9Y14-80E,115
Nexperia USA Inc.

MOSFET N-CH 80V LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione5.424
MOSFET (Metal Oxide)
80V
62A (Tc)
5V
2.1V @ 1mA
28.9nC @ 5V
4640pF @ 25V
±10V
-
147W (Tc)
14 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
DMP2002UPS-13
Diodes Incorporated

MOSFET P-CH 20V POWERDI5060-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 585nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12826pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione7.600
MOSFET (Metal Oxide)
20V
60A (Tc)
2.5V, 10V
1.4V @ 250µA
585nC @ 10V
12826pF @ 10V
±12V
-
2.3W (Ta)
1.9 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
STD7N65M2
STMicroelectronics

MOSFET N-CH 650V 5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.944
MOSFET (Metal Oxide)
650V
5A (Tc)
10V
4V @ 250µA
9nC @ 10V
270pF @ 100V
±25V
-
60W (Tc)
1.15 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot BSC014N03LS G
Infineon Technologies

MOSFET N-CH 30V 100A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione255.660
MOSFET (Metal Oxide)
30V
34A (Ta), 100A (Tc)
4.5V, 10V
2.2V @ 250µA
131nC @ 10V
10000pF @ 15V
±20V
-
2.5W (Ta), 139W (Tc)
1.4 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
NX7002BKWX
Nexperia USA Inc.

MOSFET 2N-CH 60V SC-70

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323-3
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione6.608
MOSFET (Metal Oxide)
60V
270mA (Ta)
5V, 10V
2.1V @ 250µA
1nC @ 10V
23.6pF @ 10V
±20V
-
310mW (Ta), 1.67W (Tc)
2.8 Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323-3
SC-70, SOT-323
FCP380N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione15.384
MOSFET (Metal Oxide)
600V
10.2A (Tc)
10V
3.5V @ 250µA
45nC @ 10V
1770pF @ 25V
±20V
-
106W (Tc)
380 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
CSD19533Q5A
Texas Instruments

MOSFET N-CH 100V 100A 8SON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 13A, 6V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON (5x6)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione3.568
MOSFET (Metal Oxide)
100V
100A (Ta)
6V, 10V
3.4V @ 250µA
35nC @ 10V
2670pF @ 50V
±20V
-
3.2W (Ta), 96W (Tc)
11.1 mOhm @ 13A, 6V
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON (5x6)
8-PowerTDFN
STFI15NM65N
STMicroelectronics

MOSFET N-CH 650V I2PAK-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 983pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
pacchetto: TO-262-3 Full Pack, I2Pak
Azione8.352
MOSFET (Metal Oxide)
650V
12A (Tc)
10V
4V @ 250µA
33.3nC @ 10V
983pF @ 50V
±25V
-
30W (Tc)
380 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
hot FDS6570A
Fairchild/ON Semiconductor

MOSFET N-CH 20V 15A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione421.680
MOSFET (Metal Oxide)
20V
15A (Ta)
2.5V, 4.5V
1.5V @ 250µA
66nC @ 5V
4700pF @ 10V
±8V
-
2.5W (Ta)
7.5 mOhm @ 15A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
STW40N65M2
STMicroelectronics

MOSFET N-CH 650V 32A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2355pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 99 mOhm @ 16A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione8.172
MOSFET (Metal Oxide)
650V
32A (Tc)
10V
4V @ 250µA
56.5nC @ 10V
2355pF @ 100V
±25V
-
250W (Tc)
99 mOhm @ 16A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STB14NM50N
STMicroelectronics

MOSFET N-CH 500V 12A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione390.000
MOSFET (Metal Oxide)
500V
12A (Tc)
10V
4V @ 100µA
27nC @ 10V
816pF @ 50V
±25V
-
90W (Tc)
320 mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRLL024NTR-IR
International Rectifier

AUTOMOTIVE POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
55 V
3.1A (Ta)
4V, 10V
2V @ 250µA
15.6 nC @ 5 V
510 pF @ 25 V
±16V
-
1W (Ta)
65mOhm @ 3.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
UPA2454TL-E1-A
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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-
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-
-
IPP05CN10NGHKSA1
Infineon Technologies

MOSFET N-CH 100V 100A TO-220

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
100A (Tc)
-
-
-
-
-
-
-
-
-
-
-
-
C3M0025065D
Wolfspeed, Inc.

GEN 3 650V 25 M SIC MOSFET

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
  • Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 600 V
  • Vgs (Max): +19V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 326W (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Azione2.316
SiCFET (Silicon Carbide)
650 V
97A (Tc)
15V
3.6V @ 9.22mA
108 nC @ 15 V
2980 pF @ 600 V
+19V, -8V
-
326W (Tc)
34mOhm @ 33.5A, 15V
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
C3M0025065L-TR
Wolfspeed, Inc.

SIC, MOSFET, 25M, 650V, TOLL, T&

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
  • Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2970 pF @ 400 V
  • Vgs (Max): -8V, +19V
  • FET Feature: -
  • Power Dissipation (Max): 326W (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL
  • Package / Case: 8-PowerSFN
pacchetto: -
Azione6.000
SiCFET (Silicon Carbide)
650 V
77A (Tc)
15V
3.6V @ 9.22mA
111 nC @ 15 V
2970 pF @ 400 V
-8V, +19V
-
326W (Tc)
34mOhm @ 33.5A, 15V
-40°C ~ 175°C (TJ)
Surface Mount
TOLL
8-PowerSFN
PJMB130N65EC_R2_00601
Panjit International Inc.

650V/ 130MOHM / 29A/ EASY TO DRI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 235W (Tc)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 10.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
29A (Tc)
10V
4V @ 250µA
51 nC @ 10 V
1920 pF @ 400 V
±30V
-
235W (Tc)
130mOhm @ 10.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMN3066LQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 810mW (Ta)
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione8.760
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
2.5V, 4.5V
1.5V @ 250µA
4.1 nC @ 4.5 V
353 pF @ 10 V
±12V
-
810mW (Ta)
67mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
IXFK110N65X3
IXYS

DISCRETE MOSFET 110A 650V X3 TO2

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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