Pagina 847 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti

BUK9511-55A,127

Nexperia USA Inc.

MOSFET N-CH 55V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 25V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacchetto: TO-220-3

Azione4.784

MOSFET (Metal Oxide)

55V

75A (Tc)

4.5V, 10V

2V @ 1mA

-

4230pF @ 25V

±10V

-

166W (Tc)

10 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

FQI12N60TU

Fairchild/ON Semiconductor

MOSFET N-CH 600V 10.5A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 700 mOhm @ 5.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

Azione7.024

MOSFET (Metal Oxide)

600V

10.5A (Tc)

10V

5V @ 250µA

54nC @ 10V

1900pF @ 25V

±30V

-

3.13W (Ta), 180W (Tc)

700 mOhm @ 5.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

I2PAK

TO-262-3 Long Leads, I2Pak, TO-262AA

FQP44N08

Fairchild/ON Semiconductor

MOSFET N-CH 80V 44A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 34 mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

pacchetto: TO-220-3

Azione3.376

MOSFET (Metal Oxide)

80V

44A (Tc)

10V

4V @ 250µA

50nC @ 10V

1430pF @ 25V

±25V

-

127W (Tc)

34 mOhm @ 22A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

STD150N2LH5

STMicroelectronics

MOSFET N-CH DPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Azione7.008

-

IXKG25N80C

IXYS

MOSFET N-CH 800V 25A ISO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISO264?
Package / Case: ISO264?

pacchetto: ISO264?

Azione5.872

MOSFET (Metal Oxide)

800V

25A (Tc)

10V

4V @ 2mA

166nC @ 10V

-

±20V

-

250W (Tc)

150 mOhm @ 9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISO264?

VS-FA40SA50LC

Vishay Semiconductor Diodes Division

MOSFET N-CH 500V 40A SOT-227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 40A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC

pacchetto: SOT-227-4, miniBLOC

Azione3.904

MOSFET (Metal Oxide)

500V

40A

10V

4V @ 250µA

420nC @ 10V

6900pF @ 25V

±20V

-

543W (Tc)

130 mOhm @ 23A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227

SOT-227-4, miniBLOC

RJK6012DPE-00#J3

Renesas Electronics America

MOSFET N-CH 600V 10A LDPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 920 mOhm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-LDPAK
Package / Case: SC-83

pacchetto: SC-83

Azione4.064

MOSFET (Metal Oxide)

600V

10A (Ta)

10V

-

30nC @ 10V

1100pF @ 25V

±30V

-

100W (Tc)

920 mOhm @ 5A, 10V

150°C (TJ)

Surface Mount

4-LDPAK

SC-83

IRFR430ATRLPBF

Vishay Siliconix

MOSFET N-CH 500V 5A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione44.364

MOSFET (Metal Oxide)

500V

5A (Tc)

10V

4.5V @ 250µA

24nC @ 10V

490pF @ 25V

±30V

-

110W (Tc)

1.7 Ohm @ 3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF540ZPBF

Infineon Technologies

MOSFET N-CH 100V 36A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 92W (Tc)
Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacchetto: TO-220-3

Azione12.732

MOSFET (Metal Oxide)

100V

36A (Tc)

10V

4V @ 250µA

63nC @ 10V

1770pF @ 25V

±20V

-

92W (Tc)

26.5 mOhm @ 22A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

FDMS86350

Fairchild/ON Semiconductor

MOSFET N-CH 80V 80A POWER56

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10680pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Power56
Package / Case: 8-PowerTDFN

pacchetto: 8-PowerTDFN

Azione112.056

MOSFET (Metal Oxide)

80V

25A (Ta), 130A (Tc)

8V, 10V

4.5V @ 250µA

155nC @ 10V

10680pF @ 40V

±20V

-

2.7W (Ta), 156W (Tc)

2.4 mOhm @ 25A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

Power56

8-PowerTDFN

PHP45NQ11T,127

Nexperia USA Inc.

MOSFET N-CH 105V 47A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 105V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacchetto: TO-220-3

Azione21.084

MOSFET (Metal Oxide)

105V

47A (Tc)

10V

4V @ 1mA

60nC @ 10V

2930pF @ 25V

±20V

-

150W (Tc)

25 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

SFT1446-TL-H

ON Semiconductor

MOSFET N-CH 60V 20A TP-FA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 51 mOhm @ 10A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TP-FA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione90.396

MOSFET (Metal Oxide)

60V

20A (Ta)

4V, 10V

2.6V @ 1mA

16nC @ 10V

750pF @ 20V

±20V

-

1W (Ta), 23W (Tc)

51 mOhm @ 10A, 10V

150°C (TJ)

Surface Mount

TP-FA

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF6636TRPBF

Infineon Technologies

MOSFET N-CH 20V 18A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? ST
Package / Case: DirectFET? Isometric ST

pacchetto: DirectFET? Isometric ST

Azione18.228

MOSFET (Metal Oxide)

20V

18A (Ta), 81A (Tc)

4.5V, 10V

2.45V @ 250µA

27nC @ 4.5V

2420pF @ 10V

±20V

-

2.2W (Ta), 42W (Tc)

4.5 mOhm @ 18A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

DIRECTFET? ST

DirectFET? Isometric ST

IRFB7430PBF

Infineon Technologies

MOSFET N CH 40V 195A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacchetto: TO-220-3

Azione191.220

MOSFET (Metal Oxide)

40V

195A (Tc)

6V, 10V

3.9V @ 250µA

460nC @ 10V

14240pF @ 25V

±20V

-

375W (Tc)

1.3 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

STL300N4LF8

STMicroelectronics

POWER FLAT 8L 6X5X1 P1.27

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Request a Quote

-

IRF9Z34PBF-BE3

Vishay Siliconix

MOSFET P-CH 60V 18A TO220AB

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacchetto: -

Azione141

MOSFET (Metal Oxide)

60 V

18A (Tc)

-

4V @ 250µA

34 nC @ 10 V

1100 pF @ 25 V

±20V

-

88W (Tc)

140mOhm @ 11A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

AON6324

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 85A 8DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2719 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerVDFN

pacchetto: -

Request a Quote

MOSFET (Metal Oxide)

30 V

85A (Tc)

4.5V, 10V

2.1V @ 250µA

28 nC @ 4.5 V

2719 pF @ 15 V

±20V

-

83W (Tc)

2.1mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (5x6)

8-PowerVDFN

IMZA65R040M2HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Request a Quote

-

NTH4L020N120SC1

onsemi

SICFET N-CH 1200V 102A TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Vgs (Max): +25V, -15V
FET Feature: -
Power Dissipation (Max): 510W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4

pacchetto: -

Azione1.248

SiCFET (Silicon Carbide)

1200 V

102A (Tc)

20V

4.3V @ 20mA

220 nC @ 20 V

2943 pF @ 800 V

+25V, -15V

-

510W (Tc)

28mOhm @ 60A, 20V

-55°C ~ 175°C (TJ)

Through Hole

TO-247-4L

TO-247-4

RJK03B9DPA-00-J5A

Renesas Electronics Corporation

MOSFET N-CH 30V 30A 8WPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK
Package / Case: 8-PowerWDFN

pacchetto: -

Request a Quote

MOSFET (Metal Oxide)

30 V

30A (Ta)

-

7.4 nC @ 4.5 V

1110 pF @ 10 V

-

25W (Tc)

10.6mOhm @ 15A, 10V

150°C (TJ)

Surface Mount

8-WPAK

8-PowerWDFN

SIA4446DJ-T1-GE3

Vishay Siliconix

N-CHANNEL 40 V (D-S) MOSFET POWE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 20 V
Vgs (Max): +20V, -16V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual

pacchetto: -

Azione9.012

MOSFET (Metal Oxide)

40 V

13A (Ta), 31A (Tc)

4.5V, 10V

2.4V @ 250µA

19 nC @ 10 V

915 pF @ 20 V

+20V, -16V

-

3.5W (Ta), 19.2W (Tc)

11mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

2SK3573-AZ

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Request a Quote

-

SQJ420EP-T1_BE3

Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

pacchetto: -

Azione17.322

MOSFET (Metal Oxide)

40 V

30A (Tc)

4.5V, 10V

2.5V @ 250µA

41 nC @ 10 V

1860 pF @ 25 V

±20V

-

45W (Tc)

10mOhm @ 9.7A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8

NTBG045N065SC1

onsemi

SILICON CARBIDE MOSFET, NCHANNEL

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Vgs (Max): +22V, -8V
FET Feature: -
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

pacchetto: -

Azione1.845

SiCFET (Silicon Carbide)

650 V

62A (Tc)

15V, 18V

4.3V @ 8mA

105 nC @ 18 V

1890 pF @ 325 V

+22V, -8V

-

242W (Tc)

50mOhm @ 25A, 18V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK-7

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

QM3404K-ML

MOSLEADER

Single N 30V 3.9A SOT23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Request a Quote

-

CPH3426-TL-E

onsemi

NCH 4V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacchetto: -

Request a Quote

-

UPA2720GR-E1-A

Renesas Electronics Corporation

MOSFET N-CH 30V 14A 8PSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 7A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PSOP
Package / Case: 8-SOIC (0.173", 4.40mm Width)

pacchetto: -

Request a Quote

MOSFET (Metal Oxide)

30 V

14A (Ta)

-

2.5V @ 1mA

27 nC @ 5 V

2800 pF @ 10 V

-

6.6mOhm @ 7A, 10V

-

Surface Mount

8-PSOP

8-SOIC (0.173", 4.40mm Width)

RD3T050CNTL1

Rohm Semiconductor

MOSFET N-CH 200V 5A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

Azione6.042

MOSFET (Metal Oxide)

200 V

5A (Tc)

10V

5.25V @ 1mA

8.3 nC @ 10 V

330 pF @ 25 V

±30V

-

29W (Tc)

760mOhm @ 2.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUK9511-55A,127	Nexperia USA Inc.	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: TO-220-3	Azione4.784	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	-	4230pF @ 25V	±10V	-	166W (Tc)	10 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQI12N60TU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 10.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA	Azione7.024	MOSFET (Metal Oxide)	600V	10.5A (Tc)	10V	5V @ 250µA	54nC @ 10V	1900pF @ 25V	±30V	-	3.13W (Ta), 180W (Tc)	700 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FQP44N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 44A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	pacchetto: TO-220-3	Azione3.376	MOSFET (Metal Oxide)	80V	44A (Tc)	10V	4V @ 250µA	50nC @ 10V	1430pF @ 25V	±25V	-	127W (Tc)	34 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
STD150N2LH5	STMicroelectronics	MOSFET N-CH DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Azione7.008	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXKG25N80C	IXYS	MOSFET N-CH 800V 25A ISO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISO264? Package / Case: ISO264?	pacchetto: ISO264?	Azione5.872	MOSFET (Metal Oxide)	800V	25A (Tc)	10V	4V @ 2mA	166nC @ 10V	-	±20V	-	250W (Tc)	150 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISO264?	ISO264?
VS-FA40SA50LC	Vishay Semiconductor Diodes Division	MOSFET N-CH 500V 40A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	pacchetto: SOT-227-4, miniBLOC	Azione3.904	MOSFET (Metal Oxide)	500V	40A	10V	4V @ 250µA	420nC @ 10V	6900pF @ 25V	±20V	-	543W (Tc)	130 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
RJK6012DPE-00#J3	Renesas Electronics America	MOSFET N-CH 600V 10A LDPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 920 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	pacchetto: SC-83	Azione4.064	MOSFET (Metal Oxide)	600V	10A (Ta)	10V	-	30nC @ 10V	1100pF @ 25V	±30V	-	100W (Tc)	920 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	4-LDPAK	SC-83
IRFR430ATRLPBF	Vishay Siliconix	MOSFET N-CH 500V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione44.364	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4.5V @ 250µA	24nC @ 10V	490pF @ 25V	±30V	-	110W (Tc)	1.7 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF540ZPBF	Infineon Technologies	MOSFET N-CH 100V 36A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: TO-220-3	Azione12.732	MOSFET (Metal Oxide)	100V	36A (Tc)	10V	4V @ 250µA	63nC @ 10V	1770pF @ 25V	±20V	-	92W (Tc)	26.5 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDMS86350	Fairchild/ON Semiconductor	MOSFET N-CH 80V 80A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10680pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	pacchetto: 8-PowerTDFN	Azione112.056	MOSFET (Metal Oxide)	80V	25A (Ta), 130A (Tc)	8V, 10V	4.5V @ 250µA	155nC @ 10V	10680pF @ 40V	±20V	-	2.7W (Ta), 156W (Tc)	2.4 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
PHP45NQ11T,127	Nexperia USA Inc.	MOSFET N-CH 105V 47A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 105V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: TO-220-3	Azione21.084	MOSFET (Metal Oxide)	105V	47A (Tc)	10V	4V @ 1mA	60nC @ 10V	2930pF @ 25V	±20V	-	150W (Tc)	25 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SFT1446-TL-H	ON Semiconductor	MOSFET N-CH 60V 20A TP-FA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 51 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione90.396	MOSFET (Metal Oxide)	60V	20A (Ta)	4V, 10V	2.6V @ 1mA	16nC @ 10V	750pF @ 20V	±20V	-	1W (Ta), 23W (Tc)	51 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF6636TRPBF	Infineon Technologies	MOSFET N-CH 20V 18A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	pacchetto: DirectFET? Isometric ST	Azione18.228	MOSFET (Metal Oxide)	20V	18A (Ta), 81A (Tc)	4.5V, 10V	2.45V @ 250µA	27nC @ 4.5V	2420pF @ 10V	±20V	-	2.2W (Ta), 42W (Tc)	4.5 mOhm @ 18A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST	DirectFET? Isometric ST
IRFB7430PBF	Infineon Technologies	MOSFET N CH 40V 195A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: TO-220-3	Azione191.220	MOSFET (Metal Oxide)	40V	195A (Tc)	6V, 10V	3.9V @ 250µA	460nC @ 10V	14240pF @ 25V	±20V	-	375W (Tc)	1.3 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STL300N4LF8	STMicroelectronics	POWER FLAT 8L 6X5X1 P1.27 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF9Z34PBF-BE3	Vishay Siliconix	MOSFET P-CH 60V 18A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacchetto: -	Azione141	MOSFET (Metal Oxide)	60 V	18A (Tc)	-	4V @ 250µA	34 nC @ 10 V	1100 pF @ 25 V	±20V	-	88W (Tc)	140mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AON6324	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 85A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2719 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerVDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	30 V	85A (Tc)	4.5V, 10V	2.1V @ 250µA	28 nC @ 4.5 V	2719 pF @ 15 V	±20V	-	83W (Tc)	2.1mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerVDFN
IMZA65R040M2HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTH4L020N120SC1	onsemi	SICFET N-CH 1200V 102A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4.3V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V Vgs (Max): +25V, -15V FET Feature: - Power Dissipation (Max): 510W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	pacchetto: -	Azione1.248	SiCFET (Silicon Carbide)	1200 V	102A (Tc)	20V	4.3V @ 20mA	220 nC @ 20 V	2943 pF @ 800 V	+25V, -15V	-	510W (Tc)	28mOhm @ 60A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
RJK03B9DPA-00-J5A	Renesas Electronics Corporation	MOSFET N-CH 30V 30A 8WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	30 V	30A (Ta)	-	-	7.4 nC @ 4.5 V	1110 pF @ 10 V	-	-	25W (Tc)	10.6mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	8-WPAK	8-PowerWDFN
SIA4446DJ-T1-GE3	Vishay Siliconix	N-CHANNEL 40 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 20 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual	pacchetto: -	Azione9.012	MOSFET (Metal Oxide)	40 V	13A (Ta), 31A (Tc)	4.5V, 10V	2.4V @ 250µA	19 nC @ 10 V	915 pF @ 20 V	+20V, -16V	-	3.5W (Ta), 19.2W (Tc)	11mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
2SK3573-AZ	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQJ420EP-T1_BE3	Vishay Siliconix	N-CHANNEL 40-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	pacchetto: -	Azione17.322	MOSFET (Metal Oxide)	40 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	41 nC @ 10 V	1860 pF @ 25 V	±20V	-	45W (Tc)	10mOhm @ 9.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NTBG045N065SC1	onsemi	SILICON CARBIDE MOSFET, NCHANNEL FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.3V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V Vgs (Max): +22V, -8V FET Feature: - Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	pacchetto: -	Azione1.845	SiCFET (Silicon Carbide)	650 V	62A (Tc)	15V, 18V	4.3V @ 8mA	105 nC @ 18 V	1890 pF @ 325 V	+22V, -8V	-	242W (Tc)	50mOhm @ 25A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
QM3404K-ML	MOSLEADER	Single N 30V 3.9A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CPH3426-TL-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2720GR-E1-A	Renesas Electronics Corporation	MOSFET N-CH 30V 14A 8PSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 6.6mOhm @ 7A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PSOP Package / Case: 8-SOIC (0.173", 4.40mm Width)	pacchetto: -	Request a Quote	MOSFET (Metal Oxide)	30 V	14A (Ta)	-	2.5V @ 1mA	27 nC @ 5 V	2800 pF @ 10 V	-	-	-	6.6mOhm @ 7A, 10V	-	Surface Mount	8-PSOP	8-SOIC (0.173", 4.40mm Width)
RD3T050CNTL1	Rohm Semiconductor	MOSFET N-CH 200V 5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.25V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 760mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacchetto: -	Azione6.042	MOSFET (Metal Oxide)	200 V	5A (Tc)	10V	5.25V @ 1mA	8.3 nC @ 10 V	330 pF @ 25 V	±30V	-	29W (Tc)	760mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63