Transistor - FET, MOSFET - Singoli

IRLR4343-701PBF

Infineon Technologies

MOSFET N-CH 55V 26A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

IPI100N06S3L-03

Infineon Technologies

MOSFET N-CH 55V 100A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 230µA
• Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

SIE800DF-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 50A 10-POLARPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
• Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 10-PolarPAK? (S)
• Package / Case: 10-PolarPAK? (S)

pacchetto: 10-PolarPAK? (S)

IXFV12N80PS

IXYS

MOSFET N-CH 800V 12A PLUS220-S

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PLUS-220SMD
• Package / Case: PLUS-220SMD

pacchetto: PLUS-220SMD

IXFT12N100Q

IXYS

MOSFET N-CH 1000V 12A TO268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTV22N60P

IXYS

MOSFET N-CH 600V 22A PLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS220
• Package / Case: TO-220-3, Short Tab

pacchetto: TO-220-3, Short Tab

BUK7507-55B,127

Nexperia USA Inc.

MOSFET N-CH 55V 75A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3760pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 203W (Tc)
• Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

FQB4N20LTM

Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.8A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.13W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 1.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFP460

Vishay Siliconix

MOSFET N-CH 500V 20A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 280W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

pacchetto: TO-247-3

IPI65R600C6XKSA1

Infineon Technologies

MOSFET N-CH 650V 7.3A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 210µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

IXFK80N15Q

IXYS

MOSFET N-CH 150V 80A TO-264AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

pacchetto: TO-264-3, TO-264AA

R6012ANJTL

Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 420 mOhm @ 6A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LPTS
• Package / Case: SC-83

pacchetto: SC-83

STW36NM60ND

STMicroelectronics

MOSFET N-CH 600V 29A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 110 mOhm @ 14.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

pacchetto: TO-247-3

SQJQ480E-T1_GE3

Vishay Siliconix

MOSFET N-CHAN 80V POWERPAK 8X8L

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8625pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 8 x 8
• Package / Case: 8-PowerTDFN

pacchetto: 8-PowerTDFN

SIHA12N60E-E3

Vishay Siliconix

MOSFET N-CH 600V 12A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 33W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

STF2LN60K3

STMicroelectronics

MOSFET N CH 600V 2A TO-220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

SI3429EDV-T1-GE3

Vishay Siliconix

MOSFET P-CHAN 20V TSOP6S

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4085pF @ 50V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 4.2W (Tc)
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: SOT-23-6 Thin, TSOT-23-6

DN3545N3-G

Microchip Technology

MOSFET N-CH 450V 0.136A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 740mW (Ta)
• Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 0V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92 (TO-226)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

pacchetto: TO-226-3, TO-92-3 (TO-226AA)

CSD19537Q3

Texas Instruments

MOSFET N-CH 100V 50A 8VSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-VSON (3.3x3.3)
• Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

3N163-TO-72-4L-ROHS

Linear Integrated Systems, Inc.

P-CHANNEL, SINGLE ENHANCEMENT MO

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 50mA
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 5V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
• Vgs (Max): -6.5V
• FET Feature: -
• Power Dissipation (Max): 375mW
• Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-72-4
• Package / Case: TO-206AF, TO-72-4 Metal Can

pacchetto: -

TPH4R50ANH1-LQ

Toshiba Semiconductor and Storage

MOSFET 100V 4.5MOHM SOP-ADV(N)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5.75)
• Package / Case: 8-PowerTDFN

pacchetto: -

DMN31D4UFZ-7B

Diodes Incorporated

MOSFET BVDSS: 25V~30V X2-DFN0606

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 300mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN0606-3
• Package / Case: 3-XFDFN

pacchetto: -

AOI380A60C

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO251A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251A
• Package / Case: TO-251-3 Stub Leads, IPAK

pacchetto: -

Request a Quote

DMP2900UT-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 250mW (Ta)
• Rds On (Max) @ Id, Vgs: 700mOhm @ 430mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-523
• Package / Case: SOT-523

pacchetto: -

Request a Quote

BUK6Y33-60PX

Nexperia USA Inc.

MOSFET P-CH 60V 30A LFPAK56

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Ta)
• Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

pacchetto: -

EPC2050

EPC

TRANS GAN BUMPED DIE

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 350 V
• Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 280 V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

pacchetto: -

XP264N0301TR-G

Torex Semiconductor Ltd

MOSFET N-CH 60V 300MA SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

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onsemi

PTNG 80V IN CEBU PQFN88

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 650µA
• Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.3W (Ta)
• Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFNW (8.3x8.4)
• Package / Case: 8-PowerTDFN

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