Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.976 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | ±20V | - | 250W (Tc) | 2.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-205AF Metal Can |
Azione6.112 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4V @ 250µA | 33nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 1.6 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF (TO-39) | TO-205AF Metal Can |
||
NXP |
MOSFET N-CH 20V 0.97A SOT416
|
pacchetto: SC-75, SOT-416 |
Azione2.384 |
|
MOSFET (Metal Oxide) | 20V | 970mA (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 0.72nC @ 4.5V | 34pF @ 20V | ±12V | - | 530mW (Tc) | 350 mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75 | SC-75, SOT-416 |
||
Vishay Siliconix |
MOSFET N-CH 30V 60A POLARPAK
|
pacchetto: 10-PolarPAK? (L) |
Azione5.616 |
|
MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2V @ 250µA | 250nC @ 10V | 13000pF @ 15V | ±12V | - | 5.2W (Ta), 125W (Tc) | 1.7 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (L) | 10-PolarPAK? (L) |
||
Vishay Siliconix |
MOSFET P-CH 30V 35A PPAK 1212-8
|
pacchetto: PowerPAK? 1212-8 |
Azione3.584 |
|
MOSFET (Metal Oxide) | 30V | 35A (Tc) | 10V | 3V @ 250µA | 150nC @ 10V | 4650pF @ 15V | ±25V | - | 5.4W (Ta), 83.3W (Tc) | 6.5 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Rohm Semiconductor |
MOSFET N-CH 250V 8A TO220FN
|
pacchetto: TO-220-3 Full Pack |
Azione4.464 |
|
MOSFET (Metal Oxide) | 250V | 8A (Ta) | 10V | 4V @ 1mA | 30nC @ 10V | 543pF @ 10V | ±30V | - | 35W (Tc) | 500 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 11.5A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione146.532 |
|
MOSFET (Metal Oxide) | 30V | 11.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 24nC @ 5V | 2010pF @ 15V | ±20V | - | 2.5W (Ta) | 11 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 20A TO-247
|
pacchetto: TO-247-3 |
Azione103.464 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 5V @ 250µA | 55nC @ 10V | 3290pF @ 25V | ±30V | - | 277W (Tc) | 265 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Fairchild/ON Semiconductor |
UNIFET 250V
|
pacchetto: TO-220-3 Full Pack |
Azione5.680 |
|
MOSFET (Metal Oxide) | 250V | 51A (Tc) | 10V | 5V @ 250µA | 70nC @ 10V | 3410pF @ 25V | ±30V | - | 38W (Tc) | 60 mOhm @ 25.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 60V 36A SO8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione4.128 |
|
MOSFET (Metal Oxide) | 60V | 235A (Tc) | 4.5V, 10V | 2V @ 250µA | 41nC @ 4.5V | 6660pF @ 25V | ±20V | - | 3.8W (Ta), 167W (Tc) | 1.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
pacchetto: TO-220-3 |
Azione3.648 |
|
MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 1965pF @ 25V | ±30V | - | 52W (Tc) | 480 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 9A WDSON-2
|
pacchetto: 3-WDSON |
Azione5.504 |
|
MOSFET (Metal Oxide) | 100V | 9A (Ta), 83A (Tc) | 6V, 10V | 3.5V @ 100µA | 74nC @ 10V | 5500pF @ 50V | ±20V | - | 2.8W (Ta), 78W (Tc) | 5.6 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
||
Infineon Technologies |
MOSFET N-CH 30V 80A TO-263-3
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.408 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | ±20V | - | 94W (Tc) | 3.4 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 1.8A TO-263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.648 |
|
MOSFET (Metal Oxide) | 600V | 1.8A (Tc) | 10V | 5.5V @ 80µA | 9.5nC @ 10V | 240pF @ 25V | ±20V | - | 25W (Tc) | 3 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 7.6A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.608 |
|
MOSFET (Metal Oxide) | 40V | 7.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 11nC @ 10V | 760pF @ 20V | ±20V | - | 2.5W (Ta) | 29 mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione444.540 |
|
MOSFET (Metal Oxide) | 100V | 180A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | ±16V | - | 370W (Tc) | 4.3 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 30V 19.2A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione424.920 |
|
MOSFET (Metal Oxide) | 30V | 19.2A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 135nC @ 10V | 3900pF @ 15V | ±25V | - | 2.9W (Ta), 5.9W (Tc) | 8.8 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET P-CH 30V 6.8A U-DFN2020-6
|
pacchetto: 6-UDFN Exposed Pad |
Azione257.400 |
|
MOSFET (Metal Oxide) | 30V | 6.8A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 22nC @ 10V | 1241pF @ 15V | ±20V | - | 660mW (Ta) | 32 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
||
Microchip Technology |
MOSFET N-CH 600V 17A TO247
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 17A (Tc) | - | 5V @ 1mA | 43 nC @ 10 V | 1850 pF @ 25 V | - | - | - | 380mOhm @ 8.5A, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 800V 5.4A IPAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 5.4A (Tc) | 10V | 4V @ 250µA | 44 nC @ 10 V | 827 pF @ 100 V | ±30V | - | 78W (Tc) | 940mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |
||
Vishay Siliconix |
MOSFET P-CHANNEL 30V 18A 8SOIC
|
pacchetto: - |
Azione105.021 |
|
MOSFET (Metal Oxide) | 30 V | 18A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 50 nC @ 4.5 V | 3630 pF @ 25 V | ±20V | - | 6.8W (Tc) | 12mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
1200V SILICON CARBIDE MOSFET
|
pacchetto: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 68A (Tc) | 15V | 2.8V @ 17.5mA | 104 nC @ 15 V | 2908 pF @ 800 V | +15V, -5V | - | 300W (Ta) | 43mOhm @ 20A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Vishay Siliconix |
MOSFET P-CH 400V 1.8A DPAK
|
pacchetto: - |
Azione8.742 |
|
MOSFET (Metal Oxide) | 400 V | 1.8A (Tc) | 10V | 4V @ 250µA | 13 nC @ 10 V | 270 pF @ 25 V | ±20V | - | 50W (Tc) | 7Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Sanyo |
MOSFET FOR 60V MOTOR DRIVERS
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 650V 80A TO247-4L
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 80A (Tc) | 10V | 5V @ 4mA | 140 nC @ 10 V | 8300 pF @ 25 V | ±30V | - | 890W (Tc) | 38mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
onsemi |
MOSFET N-CH 60V 7.4A/37A DPAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 7.4A (Ta), 37A (Tc) | 5V, 10V | 2V @ 250µA | 34 nC @ 10 V | 1890 pF @ 25 V | ±20V | - | 72W (Tc) | 22mOhm @ 32A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Panjit International Inc. |
20V P-CHANNEL ENHANCEMENT MODE M
|
pacchetto: - |
Azione4.695 |
|
MOSFET (Metal Oxide) | 20 V | 4.4A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 7 nC @ 10 V | 522 pF @ 10 V | ±12V | - | 2W (Ta) | 82mOhm @ 4.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
||
Vishay Siliconix |
N-CHANNEL 800V
|
pacchetto: - |
Azione1.500 |
|
MOSFET (Metal Oxide) | 800 V | 5.4A (Tc) | 10V | 4V @ 250µA | 44 nC @ 10 V | 827 pF @ 100 V | ±30V | - | 78W (Tc) | 940mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |