Transistor - FET, MOSFET - Singoli

IRF7521D1TRPBF

Infineon Technologies

MOSFET N-CH 20V 2.4A MICRO8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro8?
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

IRLR3715TR

Infineon Technologies

MOSFET N-CH 20V 54A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

SUP18N15-95-E3

Vishay Siliconix

MOSFET N-CH 150V 18A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 88W (Tc)
• Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

pacchetto: TO-220-3

SI6459BDQ-T1-E3

Vishay Siliconix

MOSFET P-CH 60V 2.2A 8-TSSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

IXTV200N10TS

IXYS

MOSFET N-CH 100V 200A PLUS220SMD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 550W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PLUS-220SMD
• Package / Case: PLUS-220SMD

pacchetto: PLUS-220SMD

STP16NF25

STMicroelectronics

MOSFET N-CH 250V 13A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 235 mOhm @ 6.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

IRF3808STRRPBF

Infineon Technologies

MOSFET N-CH 75V 106A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5310pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 82A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFH17N80Q

IXYS

MOSFET N-CH 800V 17A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

pacchetto: TO-247-3

RP1E050RPTR

Rohm Semiconductor

MOSFET P-CH 30V 5A MPT6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MPT6
• Package / Case: 6-SMD, Flat Leads

pacchetto: 6-SMD, Flat Leads

TK80S06K3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 80A DPAK-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

STP6N65M2

STMicroelectronics

MOSFET N-CH 650V 4A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 226pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

pacchetto: TO-220-3

IXFN55N50

IXYS

MOSFET N-CH 500V 55A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 55A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625W (Tc)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

pacchetto: SOT-227-4, miniBLOC

BUK9M23-80EX

Nexperia USA Inc.

MOSFET N-CH 80V 37A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2808pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

pacchetto: SOT-1210, 8-LFPAK33 (5-Lead)

STB120N4LF6

STMicroelectronics

MOSFET N-CH 40V 80A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DMT6010LPS-13

Diodes Incorporated

MOSFET N-CH 60V 13.5A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta), 113W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

pacchetto: 8-PowerTDFN

PMZ950UPEYL

Nexperia USA Inc.

MOSFET P-CH 20V 0.5A

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN1006-3
• Package / Case: SC-101, SOT-883

pacchetto: SC-101, SOT-883

IRFB3307PBF

Infineon Technologies

MOSFET N-CH 75V 130A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

SI2329DS-T1-GE3

Vishay Siliconix

MOSFET P-CH 8V 6A SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 8V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 800mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1485pF @ 4V
• Vgs (Max): ±5V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

GSF3407

Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -4.1A, -30

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta)
• Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacchetto: -

IAUT260N10S5N019ATMA1

Infineon Technologies

MOSFET N-CH 100V 260A 8HSOF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 210µA
• Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-8-1
• Package / Case: 8-PowerSFN

pacchetto: -

DMTH12H007SK3-13

Diodes Incorporated

MOSFET BVDSS: 101V~250V TO252 T&

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 60 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

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BTS114AE3045A

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50 V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W
• Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO220-3-5
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacchetto: -

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SPA21N50C3XKSA1

Infineon Technologies

HIGH POWER_LEGACY

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 560 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34.5W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-31
• Package / Case: TO-220-3 Full Pack

pacchetto: -

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UPA1759G-E1-A

Renesas

UPA1759 - SWITCHING N-CHANNEL PO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PowerSOP
• Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)

pacchetto: -

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DMNH6021SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1132 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W
• Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI5060-8 (Type UX)
• Package / Case: 8-PowerTDFN

pacchetto: -

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NVTFS014P04M8LTAG

onsemi

MOSFET P-CH 40V 11.3A/49A 8WDFN

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 420µA
• Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
• Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WDFN (3.3x3.3)
• Package / Case: 8-PowerWDFN

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IXTV86N25T

IXYS

MOSFET N-CH PLUS220

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

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DMT10H009LK3-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V TO252 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta)
• Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -