Pagina 724 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  724/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
ATP203-TL-H
ON Semiconductor

MOSFET N-CH 30V 75A ATPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 38A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ATPAK
  • Package / Case: ATPAK (2 leads+tab)
pacchetto: ATPAK (2 leads+tab)
Azione7.776
MOSFET (Metal Oxide)
30V
75A (Ta)
4.5V, 10V
-
44nC @ 10V
2750pF @ 10V
±20V
-
50W (Tc)
8.2 mOhm @ 38A, 10V
150°C (TJ)
Surface Mount
ATPAK
ATPAK (2 leads+tab)
hot NTA4151PT1
ON Semiconductor

MOSFET P-CH 20V 0.76A SOT-416

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 301mW (Tj)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75, SOT-416
  • Package / Case: SC-75, SOT-416
pacchetto: SC-75, SOT-416
Azione104.760
MOSFET (Metal Oxide)
20V
760mA (Tj)
1.8V, 4.5V
450mV @ 250µA
2.1nC @ 4.5V
156pF @ 5V
±6V
-
301mW (Tj)
360 mOhm @ 350mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
ZXMN2A01E6TC
Diodes Incorporated

MOSFET N-CH 20V 2.5A SOT23-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 303pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6
  • Package / Case: SOT-23-6
pacchetto: SOT-23-6
Azione6.896
MOSFET (Metal Oxide)
20V
2.5A (Ta)
2.5V, 4.5V
700mV @ 250µA
3nC @ 4.5V
303pF @ 15V
±12V
-
1.1W (Ta)
120 mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
ZVN4306AVSTOA
Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 850mW (Ta)
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: E-Line (TO-92 compatible)
  • Package / Case: E-Line-3
pacchetto: E-Line-3
Azione6.624
MOSFET (Metal Oxide)
60V
1.1A (Ta)
5V, 10V
3V @ 1mA
-
350pF @ 25V
±20V
-
850mW (Ta)
330 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
E-Line (TO-92 compatible)
E-Line-3
IRFSL7534PBF
Infineon Technologies

MOSFET N-CH 60V 195A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 294W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione7.936
MOSFET (Metal Oxide)
60V
195A (Tc)
6V, 10V
3.7V @ 250µA
279nC @ 10V
10034pF @ 25V
±20V
-
294W (Tc)
2.4 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
IXTQ54N30T
IXYS

MOSFET N-CH 300V 54A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione3.568
MOSFET (Metal Oxide)
300V
54A (Tc)
-
-
-
-
-
-
-
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
NVMFS5C430NLT1G
ON Semiconductor

MOSFET N-CH 40V 200A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione5.056
MOSFET (Metal Oxide)
40V
-
4.5V, 10V
2V @ 250µA
70nC @ 10V
4300pF @ 20V
±20V
-
3.8W (Ta), 110W (Tc)
1.5 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
DMP3007SCG-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V V-DFN3333-

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: V-DFN3333-8
  • Package / Case: 8-PowerVDFN
pacchetto: 8-PowerVDFN
Azione5.312
MOSFET (Metal Oxide)
30V
50A (Tc)
4.5V, 10V
3V @ 250µA
64.2nC @ 10V
2826pF @ 15V
±25V
-
2.4W (Ta)
6.8 mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
V-DFN3333-8
8-PowerVDFN
NDTL01N60ZT1G
ON Semiconductor

MOSFET N-CH 600V 0.25A SOT223-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223 (TO-261)
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione3.536
MOSFET (Metal Oxide)
600V
250mA (Tc)
10V
4.5V @ 50µA
4.9nC @ 10V
92pF @ 25V
±30V
-
2W (Tc)
15 Ohm @ 400mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223 (TO-261)
TO-261-4, TO-261AA
NVTFS5C466NLWFTAG
ON Semiconductor

MOSFET N-CH 40V 51A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione3.392
MOSFET (Metal Oxide)
40V
51A (Tc)
4.5V, 10V
2.2V @ 250µA
7nC @ 4.5V
880pF @ 25V
±20V
-
38W (Tc)
7.3 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
BUK6210-55C,118
Nexperia USA Inc.

MOSFET N-CH 55V 78A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione4.992
MOSFET (Metal Oxide)
55V
78A (Tc)
10V
2.8V @ 1mA
63nC @ 10V
4000pF @ 25V
±16V
-
128W (Tc)
9.6 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDP42AN15A0
Fairchild/ON Semiconductor

MOSFET N-CH 150V 35A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione103.464
MOSFET (Metal Oxide)
150V
5A (Ta), 35A (Tc)
6V, 10V
4V @ 250µA
39nC @ 10V
2150pF @ 25V
±20V
-
150W (Tc)
42 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
STL6N2VH5
STMicroelectronics

MOSFET N-CH 20V 6A 6PWRFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 16V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (2x2)
  • Package / Case: 6-PowerWDFN
pacchetto: 6-PowerWDFN
Azione3.856
MOSFET (Metal Oxide)
20V
-
2.5V, 4.5V
700mV @ 250µA
6nC @ 4.5V
550pF @ 16V
±8V
-
2.4W (Tc)
30 mOhm @ 3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (2x2)
6-PowerWDFN
hot IXTA8N50P
IXYS

MOSFET N-CH 500V 8A D2-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione103.464
MOSFET (Metal Oxide)
500V
8A (Tc)
10V
5.5V @ 100µA
20nC @ 10V
1050pF @ 25V
±30V
-
150W (Tc)
800 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot CSD17312Q5
Texas Instruments

MOSFET N-CH 30V 100A 8SON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5240pF @ 15V
  • Vgs (Max): +10V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 35A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON-CLIP (5x6)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione30.180
MOSFET (Metal Oxide)
30V
38A (Ta), 100A (Tc)
3V, 8V
1.5V @ 250µA
36nC @ 4.5V
5240pF @ 15V
+10V, -8V
-
3.2W (Ta)
1.5 mOhm @ 35A, 8V
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
AON7524
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 28A 8-DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (3x3)
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: 8-PowerSMD, Flat Leads
Azione46.986
MOSFET (Metal Oxide)
30V
25A (Ta), 28A (Tc)
2.5V, 10V
1.2V @ 250µA
50nC @ 10V
2250pF @ 15V
±12V
-
3.1W (Ta), 32W (Tc)
3.3 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (3x3)
8-PowerSMD, Flat Leads
DMP3130LQ-7
Diodes Incorporated

MOSFET P-CH 30V 3.5A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 77 mOhm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione46.068
MOSFET (Metal Oxide)
30V
3.5A (Ta)
2.5V, 10V
1.3V @ 250µA
24nC @ 10V
864pF @ 15V
±12V
-
700mW (Ta)
77 mOhm @ 4.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
IXTN600N04T2
IXYS

MOSFET N-CH 40V 600A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 600A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 940W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: SOT-227-4, miniBLOC
Azione7.152
MOSFET (Metal Oxide)
40V
600A
10V
3.5V @ 250µA
590nC @ 10V
40000pF @ 25V
±20V
-
940W (Tc)
1.05 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
IPB015N06NF2SATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 186µA
  • Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione2.073
MOSFET (Metal Oxide)
60 V
37A (Ta), 195A (Tc)
6V, 10V
3.3V @ 186µA
233 nC @ 10 V
10500 pF @ 30 V
±20V
-
3.8W (Ta), 250W (Tc)
1.5mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AUXNSF2804STRL7P
Infineon Technologies

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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SI3464DV-T1-BE3
Vishay Siliconix

N-CHANNEL 20-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: -
Azione19.764
MOSFET (Metal Oxide)
20 V
7.5A (Ta), 8A (Tc)
1.8V, 4.5V
1V @ 250µA
18 nC @ 5 V
1065 pF @ 10 V
±8V
-
2W (Ta), 3.6W (Tc)
24mOhm @ 7.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
PJA3406_R1_00001
Panjit International Inc.

SOT-23, MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione122.409
MOSFET (Metal Oxide)
30 V
4.4A (Ta)
4.5V, 10V
2.1V @ 250µA
5.8 nC @ 10 V
235 pF @ 15 V
±20V
-
1.25W (Ta)
48mOhm @ 4.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
DMTH10H009SPSQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
14A (Ta), 86A (Tc)
10V
4V @ 250µA
30 nC @ 10 V
2085 pF @ 50 V
±20V
-
1.6W (Ta), 100W (Tc)
8.9mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
PJD4NA60_R2_00001
Panjit International Inc.

600V N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
4A (Ta)
10V
4V @ 250µA
11.1 nC @ 10 V
450 pF @ 25 V
±30V
-
-
2.4Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC029N025SG
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-1
  • Package / Case: 8-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
25 V
24A (Ta), 100A (Tc)
4.5V, 10V
2V @ 80µA
41 nC @ 5 V
5090 pF @ 15 V
±20V
-
2.8W (Ta), 78W (Tc)
2.9mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
64-2098PBF
Infineon Technologies

MOSFET N-CH 30V 75A D2PAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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MMFTP84K-AQ
Diotec Semiconductor

MOSFET SOT23 P -60V -0.18A 10OHM

  • FET Type: P-Channel
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 180mA
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 250mW
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: -
pacchetto: -
Request a Quote
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180mA
-
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250mW
-
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Surface Mount
SOT-23
-
MCH3335-TL-E
onsemi

PCH 2.5V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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