Transistor - FET, MOSFET - Singoli

IRF7707

Infineon Technologies

MOSFET P-CH 20V 7A 8-TSSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2361pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

IRFSL59N10D

Infineon Technologies

MOSFET N-CH 100V 59A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFBF30SPBF

Vishay Siliconix

MOSFET N-CH 900V 3.6A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NDC651N

Fairchild/ON Semiconductor

MOSFET N-CH 30V 3.2A SSOT6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
• Vgs (Max): 20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SuperSOT?-6
• Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: SOT-23-6 Thin, TSOT-23-6

APT34F100B2

Microsemi Corporation

MOSFET N-CH 1000V 35A T-MAX

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1135W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: T-MAX? [B2]
• Package / Case: TO-247-3 Variant

pacchetto: TO-247-3 Variant

IXFH52N30P

IXYS

MOSFET N-CH 300V 52A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 66 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

pacchetto: TO-247-3

SI4668DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 16.2A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 16.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1654pF @ 15V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
• Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: 8-SOIC (0.154", 3.90mm Width)

SFT1341-W

ON Semiconductor

MOSFET P-CH 40V 10A TP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta), 15W (Tc)
• Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK/TP
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

DMG1013UWQ-13

Diodes Incorporated

MOSFET PCH 20V 820MA SOT323

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 310mW (Ta)
• Rds On (Max) @ Id, Vgs: 750 mOhm @ 430mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

pacchetto: SC-70, SOT-323

IXTY4N65X2

IXYS

MOSFET N-CH 650V 4A X2 TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

STP12N65M2

STMicroelectronics

POWER MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

SPW16N50C3

Infineon Technologies

MOSFET N-CH 560V 16A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 560V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 675µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 160W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

pacchetto: TO-247-3

RCX051N25

Rohm Semiconductor

MOSFET N-CH 250V 5A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.23W (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 1.36 Ohm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FM
• Package / Case: TO-220-2 Full Pack

pacchetto: TO-220-2 Full Pack

STP30NF10

STMicroelectronics

MOSFET N-CH 100V 35A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 115W (Tc)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

TK15J60U(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 15A TO-3PN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 170W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P(N)
• Package / Case: TO-3P-3, SC-65-3

pacchetto: TO-3P-3, SC-65-3

BUK7907-55AIE,127

Nexperia USA Inc.

MOSFET N-CH 55V 75A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 272W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-5
• Package / Case: TO-220-5

pacchetto: TO-220-5

IRFI644GPBF

Vishay Siliconix

MOSFET N-CH 250V 7.9A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

pacchetto: TO-220-3 Full Pack, Isolated Tab

BUK7610-100B,118

Nexperia USA Inc.

MOSFET N-CH 100V 75A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6773pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PSMN2R4-30MLDX

Nexperia USA Inc.

MOSFET N-CH 30V 70A LFPAK33

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3264pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 91W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

pacchetto: SOT-1210, 8-LFPAK33 (5-Lead)

2SK1628-E

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

Request a Quote

HUF75345P3_NL

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55 V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 325W (Tc)
• Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

pacchetto: -

Request a Quote

IRF9321TRPBFXTMA1

Infineon Technologies

TRENCH <= 40V

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: -

Request a Quote

NTHL033N65S3HF

onsemi

MOSFET N-CH 650V 70A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6720 pF @ 400 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

pacchetto: -

HAT2019R-EL-E

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

Request a Quote

AOTF66811L

Alpha & Omega Semiconductor Inc.

N

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 8.3W (Ta), 34W (Tc)
• Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

pacchetto: -

Request a Quote

IPP60R090CFD7XKSA1

Infineon Technologies

MOSFET N-CH 600V 25A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 570µA
• Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

pacchetto: -

PJQ1906_R1_00001

Panjit International Inc.

MOSFET N-CH 30V 300MA DFN-3L

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-DFN (1x0.6)
• Package / Case: 3-UFDFN

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PMPB12R5EPX

Nexperia USA Inc.

PMPB12R5EP - 30 V, P-CHANNEL TRE

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN2020M-6
• Package / Case: 6-UDFN Exposed Pad

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