Pagina 565 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  565/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRL3715L
Infineon Technologies

MOSFET N-CH 20V 54A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione6.320
MOSFET (Metal Oxide)
20V
54A (Tc)
4.5V, 10V
3V @ 250µA
17nC @ 4.5V
1060pF @ 10V
±20V
-
3.8W (Ta), 71W (Tc)
14 mOhm @ 26A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
RJK5002DPD-00#J2
Renesas Electronics America

MOSFET N-CH 500V 2.4A TO92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.344
MOSFET (Metal Oxide)
500V
2.4A (Ta)
10V
-
6.7nC @ 10V
165pF @ 25V
±30V
-
30W (Tc)
5 Ohm @ 1.2A, 10V
150°C (TJ)
Surface Mount
MP-3A
TO-252-3, DPak (2 Leads + Tab), SC-63
SI5485DU-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 12A PPAK CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? ChipFet Single
  • Package / Case: PowerPAK? ChipFET? Single
pacchetto: PowerPAK? ChipFET? Single
Azione7.136
MOSFET (Metal Oxide)
20V
12A (Tc)
2.5V, 4.5V
1.5V @ 250µA
42nC @ 8V
1100pF @ 10V
±12V
-
3.1W (Ta), 31W (Tc)
25 mOhm @ 5.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFet Single
PowerPAK? ChipFET? Single
2SK2744(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 50V 45A TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione6.608
MOSFET (Metal Oxide)
50V
45A (Ta)
10V
3.5V @ 1mA
68nC @ 10V
2300pF @ 10V
±20V
-
125W (Tc)
20 mOhm @ 25A, 10V
150°C (TJ)
Through Hole
TO-3P(N)
TO-3P-3, SC-65-3
FQB5P20TM
Fairchild/ON Semiconductor

MOSFET P-CH 200V 4.8A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.296
MOSFET (Metal Oxide)
200V
4.8A (Tc)
10V
5V @ 250µA
13nC @ 10V
430pF @ 25V
±30V
-
3.13W (Ta), 75W (Tc)
1.4 Ohm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APTM50DAM17G
Microsemi Corporation

MOSFET N-CH 500V 180A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
pacchetto: SP6
Azione5.408
MOSFET (Metal Oxide)
500V
180A
10V
5V @ 10mA
560nC @ 10V
28000pF @ 25V
±30V
-
1250W (Tc)
20 mOhm @ 90A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
IXTT26N50P
IXYS

MOSFET N-CH 500V 26A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Azione4.320
MOSFET (Metal Oxide)
500V
26A (Tc)
10V
5.5V @ 250µA
65nC @ 10V
3600pF @ 25V
±30V
-
400W (Tc)
230 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
AON6590
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8320pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.99 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: 8-PowerSMD, Flat Leads
Azione4.864
MOSFET (Metal Oxide)
40V
67A (Ta), 100A (Tc)
4.5V, 10V
2.3V @ 250µA
100nC @ 10V
8320pF @ 20V
±20V
-
7.3W (Ta), 208W (Tc)
0.99 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
NVMFS5C450NT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 65µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione6.112
MOSFET (Metal Oxide)
40V
-
10V
3.5V @ 65µA
23nC @ 10V
1600pF @ 25V
±20V
-
3.6W (Ta), 68W (Tc)
3.3 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
RJK6032DPD-00#J2
Renesas Electronics America

MOSFET N-CH 600V 3A MP3A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.224
MOSFET (Metal Oxide)
600V
3A (Ta)
10V
-
9nC @ 10V
285pF @ 25V
±30V
-
40.3W (Tc)
4.3 Ohm @ 1.5A, 10V
150°C (TJ)
Surface Mount
MP-3A
TO-252-3, DPak (2 Leads + Tab), SC-63
TK20C60W,S1VQ
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione5.264
MOSFET (Metal Oxide)
600V
20A (Ta)
10V
3.7V @ 1mA
48nC @ 10V
1680pF @ 300V
±30V
-
165W (Tc)
155 mOhm @ 10A, 10V
150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot FCPF850N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 6A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1315pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione4.192
MOSFET (Metal Oxide)
800V
6A (Tc)
10V
4.5V @ 600µA
29nC @ 10V
1315pF @ 100V
±20V
-
28.4W (Tc)
850 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
BSC360N15NS3GATMA1
Infineon Technologies

MOSFET N-CH 150V 33A 8TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione7.712
MOSFET (Metal Oxide)
150V
33A (Tc)
8V, 10V
4V @ 45µA
15nC @ 10V
1190pF @ 75V
±20V
-
74W (Tc)
36 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
hot IRFB61N15DPBF
Infineon Technologies

MOSFET N-CH 150V 60A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione121.644
MOSFET (Metal Oxide)
150V
60A (Tc)
10V
5.5V @ 250µA
140nC @ 10V
3470pF @ 25V
±30V
-
2.4W (Ta), 330W (Tc)
32 mOhm @ 36A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
STS7P4LLF6
STMicroelectronics

MOSFET P-CH 40V 7A POWER8-SO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.640
MOSFET (Metal Oxide)
40V
-
4.5V, 10V
1V @ 250µA (Min)
22nC @ 4.5V
2850pF @ 25V
±20V
-
2.7W (Ta)
20.5 mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot STP10NK80ZFP
STMicroelectronics

MOSFET N-CH 800V 9A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione235.968
MOSFET (Metal Oxide)
800V
9A (Tc)
10V
4.5V @ 100µA
72nC @ 10V
2180pF @ 25V
±30V
-
40W (Tc)
900 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot IRLR024TRPBF
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione82.656
MOSFET (Metal Oxide)
60V
14A (Tc)
4V, 5V
2V @ 250µA
18nC @ 5V
870pF @ 25V
±10V
-
2.5W (Ta), 42W (Tc)
100 mOhm @ 8.4A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI7489DP-T1-E3
Vishay Siliconix

MOSFET P-CH 100V 28A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
pacchetto: PowerPAK? SO-8
Azione31.044
MOSFET (Metal Oxide)
100V
28A (Tc)
4.5V, 10V
3V @ 250µA
160nC @ 10V
4600pF @ 50V
±20V
-
5.2W (Ta), 83W (Tc)
41 mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
RQ5C020TPTL
Rohm Semiconductor

MOSFET P-CH 20V 2A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 2.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacchetto: -
Azione11.133
MOSFET (Metal Oxide)
20 V
2A (Ta)
2.5V, 4.5V
2V @ 1mA
4.9 nC @ 2.5 V
430 pF @ 10 V
±12V
-
700mW (Ta)
135mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
DMN30H4D1S-7
Diodes Incorporated

MOSFET N-CH 300V 430MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
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MOSFET (Metal Oxide)
300 V
430mA (Ta)
4.5V, 10V
3V @ 250µA
4.8 nC @ 10 V
174 pF @ 25 V
±20V
-
360mW (Ta)
4Ohm @ 300mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
AON6152
Alpha & Omega Semiconductor Inc.

MOSFET N-CHANNEL 45V 100A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 22.5 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: -
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MOSFET (Metal Oxide)
45 V
100A (Tc)
4.5V, 10V
2.3V @ 250µA
125 nC @ 10 V
8900 pF @ 22.5 V
±20V
-
208W (Tc)
1.15mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
AON6154
Alpha & Omega Semiconductor Inc.

MOSFET N-CHANNEL 45V 100A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6575 pF @ 22.5 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: -
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MOSFET (Metal Oxide)
45 V
100A (Tc)
4.5V, 10V
2.4V @ 250µA
120 nC @ 10 V
6575 pF @ 22.5 V
±20V
-
125W (Tc)
1.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
IRF120
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3
  • Package / Case: TO-204AA
pacchetto: -
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MOSFET (Metal Oxide)
100 V
8A (Tc)
10V
4V @ 250µA
15 nC @ 10 V
600 pF @ 25 V
±20V
-
40W (Tc)
300mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-204AA
SI3139KL3C-TP
Micro Commercial Co

MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Tj)
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1006-3A
  • Package / Case: 3-XFDFN
pacchetto: -
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MOSFET (Metal Oxide)
20 V
500mA (Ta)
1.8V, 4.5V
1.2V @ 250µA
3 nC @ 10 V
36 pF @ 10 V
±12V
-
900mW (Tj)
850mOhm @ 500mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006-3A
3-XFDFN
NTTFS005N04CTAG
onsemi

MOSFET N-CH 40V 17A/69A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: -
Azione4.350
MOSFET (Metal Oxide)
40 V
17A (Ta), 69A (Tc)
10V
3.5V @ 40µA
16 nC @ 10 V
1000 pF @ 25 V
±20V
-
3.1W (Ta), 50W (Tc)
5.6mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
SQD100N04_3M6T4GE3
Vishay Siliconix

MOSFET N-CH 40V 100A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
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MOSFET (Metal Oxide)
40 V
100A (Tc)
10V
3.5V @ 250µA
105 nC @ 10 V
6700 pF @ 25 V
±20V
-
136W (Tc)
3.6mOhm @ 20A, 10V
-55°C ~ 175°C
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
MCG45N10Y-TP
Micro Commercial Co

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tj)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN3333
  • Package / Case: 8-VDFN Exposed Pad
pacchetto: -
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MOSFET (Metal Oxide)
100 V
45A (Tc)
10V
4V @ 250µA
35 nC @ 10 V
1683 pF @ 50 V
±20V
-
48W (Tj)
12mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN3333
8-VDFN Exposed Pad
AOM033V120X2
Alpha & Omega Semiconductor Inc.

1200V SILICON CARBIDE MOSFET

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
  • Vgs (Max): +15V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Ta)
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
pacchetto: -
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SiC (Silicon Carbide Junction Transistor)
1200 V
68A (Tc)
15V
2.8V @ 17.5mA
104 nC @ 15 V
2908 pF @ 800 V
+15V, -5V
-
300W (Ta)
43mOhm @ 20A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4