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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  415/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SPB03N60C3ATMA1
Infineon Technologies

MOSFET N-CH 650V 3.2A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 135µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.312
MOSFET (Metal Oxide)
650V
3.2A (Tc)
10V
3.9V @ 135µA
17nC @ 10V
400pF @ 25V
±20V
-
38W (Tc)
1.4 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLR7833TRR
Infineon Technologies

MOSFET N-CH 30V 140A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.344
MOSFET (Metal Oxide)
30V
140A (Tc)
4.5V, 10V
2.3V @ 250µA
50nC @ 4.5V
4010pF @ 15V
±20V
-
140W (Tc)
4.5 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
AOI516_002
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 18A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1229pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251B
  • Package / Case: TO-251-3 Stub Leads, IPak
pacchetto: TO-251-3 Stub Leads, IPak
Azione6.336
MOSFET (Metal Oxide)
30V
18A (Ta), 46A (Tc)
4.5V, 10V
2.2V @ 250µA
33nC @ 10V
1229pF @ 15V
±20V
-
2.5W (Ta), 50W (Tc)
5 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251B
TO-251-3 Stub Leads, IPak
AO4494H
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 18A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.520
MOSFET (Metal Oxide)
30V
18A (Tc)
4.5V, 10V
2.5V @ 250µA
36nC @ 10V
1900pF @ 15V
±20V
-
3.1W (Ta)
6.5 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
MTD6N20ET5G
ON Semiconductor

MOSFET N-CH 200V 6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.856
MOSFET (Metal Oxide)
200V
6A (Tc)
10V
4V @ 250µA
21nC @ 10V
480pF @ 25V
±20V
-
1.75W (Ta), 50W (Tc)
700 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFR9024
Vishay Siliconix

MOSFET P-CH 60V 8.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione29.388
MOSFET (Metal Oxide)
60V
8.8A (Tc)
10V
4V @ 250µA
19nC @ 10V
570pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
280 mOhm @ 5.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NDS9410A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 7.3A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione467.064
MOSFET (Metal Oxide)
30V
7.3A (Ta)
4.5V, 10V
3V @ 250µA
22nC @ 10V
830pF @ 15V
±20V
-
2.5W (Ta)
28 mOhm @ 7.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRFD120
Vishay Siliconix

MOSFET N-CH 100V 1.3A 4-DIP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 780mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
pacchetto: 4-DIP (0.300", 7.62mm)
Azione168.360
MOSFET (Metal Oxide)
100V
1.3A (Ta)
10V
4V @ 250µA
16nC @ 10V
360pF @ 25V
±20V
-
1.3W (Ta)
270 mOhm @ 780mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
4-DIP, Hexdip, HVMDIP
4-DIP (0.300", 7.62mm)
IPC218N06N3X1SA2
Infineon Technologies

MOSFET N-CH 60V BARE DIE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 196µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Sawn on foil
  • Package / Case: Die
pacchetto: Die
Azione4.960
MOSFET (Metal Oxide)
60V
3A (Tj)
10V
4V @ 196µA
-
-
-
-
-
100 mOhm @ 2A, 10V
-
Surface Mount
Sawn on foil
Die
IPSA70R2K0CEAKMA1
Infineon Technologies

MOSFET COOLMOS 700V TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Stub Leads, IPak
pacchetto: TO-251-3 Stub Leads, IPak
Azione2.720
MOSFET (Metal Oxide)
700V
4A (Tc)
10V
3.5V @ 70µA
7.8nC @ 10V
163pF @ 100V
±20V
-
42W (Tc)
2 Ohm @ 1A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Stub Leads, IPak
RJK1001DPP-E0#T2
Renesas Electronics America

MOSFET N-CH 100V 80A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 147nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione5.312
MOSFET (Metal Oxide)
100V
80A (Ta)
10V
-
147nC @ 10V
10000pF @ 10V
±20V
-
30W (Tc)
5.5 mOhm @ 40A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
CSD18510KCS
Texas Instruments

MOSFET N-CH 40V 200A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione5.232
MOSFET (Metal Oxide)
40V
200A (Ta)
4.5V, 10V
2.3V @ 250µA
75nC @ 4.5V
11400pF @ 20V
±20V
-
250W (Ta)
1.7 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
BUK6E4R0-75C,127
Nexperia USA Inc.

MOSFET N-CH 75V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15450pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 306W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione3.136
MOSFET (Metal Oxide)
75V
120A (Tc)
4.5V, 10V
2.8V @ 1mA
234nC @ 10V
15450pF @ 25V
±16V
-
306W (Tc)
4.2 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot IXTP60N10T
IXYS

MOSFET N-CH 100V 60A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione68.568
MOSFET (Metal Oxide)
100V
60A (Tc)
10V
4.5V @ 50µA
49nC @ 10V
2650pF @ 25V
±30V
-
176W (Tc)
18 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
DMTH4007SPS-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2082pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione20.778
MOSFET (Metal Oxide)
40V
15.7A (Ta), 100A (Tc)
10V
4V @ 250µA
41.9nC @ 10V
2082pF @ 25V
±20V
-
2.8W (Ta), 136W (Tc)
7.6 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
PSMN1R2-25YL,115
Nexperia USA Inc.

MOSFET N-CH 25V 100A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6380pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 121W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SOT-1023, 4-LFPAK
pacchetto: SOT-1023, 4-LFPAK
Azione130.050
MOSFET (Metal Oxide)
25V
100A (Tc)
4.5V, 10V
2.15V @ 1mA
105nC @ 10V
6380pF @ 12V
±20V
-
121W (Tc)
1.2 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SOT-1023, 4-LFPAK
hot SI3437DV-T1-E3
Vishay Siliconix

MOSFET P-CH 150V 1.4A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione162.780
MOSFET (Metal Oxide)
150V
1.4A (Tc)
6V, 10V
4V @ 250µA
19nC @ 10V
510pF @ 50V
±20V
-
2W (Ta), 3.2W (Tc)
750 mOhm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
STB12NK80ZT4
STMicroelectronics

MOSFET N-CH 800V 10.5A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione13.698
MOSFET (Metal Oxide)
800V
10.5A (Tc)
10V
4.5V @ 100µA
87nC @ 10V
2620pF @ 25V
±30V
-
190W (Tc)
750 mOhm @ 5.25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
GSFT06130
Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -140A, -60

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 183W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione3.570
MOSFET (Metal Oxide)
60 V
140A (Tc)
4.5V, 10V
2.5V @ 250µA
420 nC @ 10 V
24000 pF @ 25 V
±20V
-
183W (Tc)
4.6mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AM2330N-T1-PF-ML
MOSLEADER

Single N 30V 5.1A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPP60R520CP
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
6.8A (Tc)
10V
3.5V @ 250µA
31 nC @ 10 V
630 pF @ 100 V
±20V
-
66W (Tc)
520mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
DMN95H2D2HCTI
Diodes Incorporated

MOSFET N-CH 950V 6A ITO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1487 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220AB
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
950 V
6A (Tc)
10V
5V @ 250µA
20.3 nC @ 10 V
1487 pF @ 25 V
±30V
-
40W (Tc)
2.2Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ITO-220AB
TO-220-3 Full Pack, Isolated Tab
STB47N50DM6AG
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 500 V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 71mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione3.000
MOSFET (Metal Oxide)
500 V
38A (Tc)
10V
5V @ 250µA
57 nC @ 10 V
2300 pF @ 100 V
±25V
-
250W (Tc)
71mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMP3007SCGQ-7
Diodes Incorporated

MOSFET P-CH 30V 50A 8DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: V-DFN3333-8 (Type B)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione8.913
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
3V @ 250µA
64.2 nC @ 10 V
2826 pF @ 15 V
±25V
-
1W (Ta)
6.8mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
V-DFN3333-8 (Type B)
8-PowerVDFN
MSC017SMA120B
Microchip Technology

MOSFET SIC 1200V 17 MOHM TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 455W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Azione6
SiCFET (Silicon Carbide)
1200 V
113A (Tc)
20V
2.7V @ 4.5mA (Typ)
249 nC @ 20 V
5280 pF @ 1000 V
+22V, -10V
-
455W (Tc)
22mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXFH170N15X3
IXYS

MOSFET N-CH 150V 170A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7620 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 85A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
150 V
170A (Tc)
10V
4.5V @ 4mA
122 nC @ 10 V
7620 pF @ 25 V
±20V
-
520W (Tc)
6.7mOhm @ 85A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
CP398X-CTLDM303N-WN
Central Semiconductor Corp

MOSFET N-CH 30V 3.6A DIE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
  • Vgs (Max): 12V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
2.5V, 4.5V
1.2V @ 250µA
13 nC @ 4.5 V
590 pF @ 10 V
12V
-
-
78mOhm @ 1.8A, 2.5V
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
PSMP012-30YEX
Nexperia USA Inc.

PSMP012-30YE/SOT669/LFPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 67.3A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
67.3A
10V
-
-
-
-
-
-
-
-
-
-
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