Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 200V 18A TO262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione3.392 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 4.9V @ 100µA | 29nC @ 10V | 1200pF @ 50V | ±20V | - | 100W (Tc) | 105 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 6A 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.616 |
|
MOSFET (Metal Oxide) | 30V | 6A (Ta) | 2.5V, 10V | 1.3V @ 250µA | 11.3nC @ 4.5V | 1128pF @ 15V | ±12V | - | 3.1W (Ta) | 46 mOhm @ 6.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 25V 8.5A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione436.368 |
|
MOSFET (Metal Oxide) | 25V | 8.5A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 14nC @ 4.5V | 1330pF @ 20V | ±20V | - | 1.25W (Ta), 58W (Tc) | 10.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione7.764 |
|
MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 4.5V @ 250µA | 23nC @ 10V | 510pF @ 25V | ±30V | - | 74W (Tc) | 2.2 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET P-CH TO263-3
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.760 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 176nC @ 10V | 3800pF @ 25V | ±16V | - | 125W (Tc) | 4.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH 200V 97A SOT-227
|
pacchetto: SOT-227-4, miniBLOC |
Azione5.328 |
|
MOSFET (Metal Oxide) | 200V | 97A | 10V | 4V @ 2.5mA | 290nC @ 10V | 8500pF @ 25V | ±30V | - | 450W (Tc) | 22 mOhm @ 48.5A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 300V 73A TO-264
|
pacchetto: TO-264-3, TO-264AA |
Azione2.736 |
|
MOSFET (Metal Oxide) | 300V | 73A (Tc) | 10V | 4V @ 4mA | 195nC @ 10V | 5400pF @ 25V | ±30V | - | 500W (Tc) | 45 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione3.616 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 65nC @ 10V | 2922pF @ 20V | ±20V | - | 55W (Tc) | 4.5 mOhm @ 15.3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Nexperia USA Inc. |
MOSFET P-CH 240V 0.2A SOT89
|
pacchetto: TO-243AA |
Azione3.200 |
|
MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 10V | 2.8V @ 1mA | - | 90pF @ 25V | ±20V | - | 560mW (Ta), 12.5W (Tc) | 12 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
||
IXYS |
MOSFET N-CH 500V 52A TO247
|
pacchetto: TO-247-3 |
Azione7.120 |
|
MOSFET (Metal Oxide) | 500V | 52A (Tc) | 10V | 4.5V @ 4mA | 113nC @ 10V | 6800pF @ 25V | ±30V | - | 960W (Tc) | 120 mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 12V 15A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione95.400 |
|
MOSFET (Metal Oxide) | 12V | 15A (Ta) | 2.8V, 4.5V | 1.9V @ 250µA | 40nC @ 4.5V | 2550pF @ 6V | ±12V | - | 2.5W (Ta) | 8 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Texas Instruments |
MOSFET N-CH 60V 22A 8VSON
|
pacchetto: 8-PowerTDFN |
Azione4.672 |
|
MOSFET (Metal Oxide) | 60V | 22A (Ta), 100A (Tc) | 6V, 10V | 3.4V @ 250µA | 64nC @ 10V | 5340pF @ 30V | ±20V | - | 3.2W (Ta) | 3.4 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 200V 90A TO220AB
|
pacchetto: TO-220-3 |
Azione8.484 |
|
MOSFET (Metal Oxide) | 200V | 90A (Tc) | 7.5V, 10V | 4V @ 250µA | 96nC @ 10V | 4132pF @ 100V | ±20V | - | 375W (Tc) | 17 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 70A TO252-3
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione531.144 |
|
MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 2.2V @ 30µA | 48nC @ 10V | 3300pF @ 25V | ±16V | - | 68W (Tc) | 4.3 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 40A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione62.388 |
|
MOSFET (Metal Oxide) | 60V | 7.1A (Ta), 40A (Tc) | 5V, 10V | 2V @ 250µA | 21nC @ 5V | 1850pF @ 25V | ±20V | - | 75W (Tc) | 19 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET N-CH 1200V 8A TO247
|
pacchetto: TO-247-3 |
Azione104.256 |
|
MOSFET (Metal Oxide) | 1200V | 8A (Tc) | 10V | 5V @ 1mA | 80nC @ 10V | 2565pF @ 25V | ±30V | - | 335W (Tc) | 2.5 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
pacchetto: 8-PowerWDFN |
Azione48.732 |
|
MOSFET (Metal Oxide) | 60V | 260A (Tc) | 4.5V, 10V | - | - | - | ±20V | - | 960mW (Ta), 170W (Tc) | - | - | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 1.7A SSOT3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione2.301.660 |
|
MOSFET (Metal Oxide) | 30V | 1.7A (Ta) | 4.5V, 10V | 2V @ 250µA | 5nC @ 5V | 195pF @ 15V | ±20V | - | 500mW (Ta) | 85 mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
||
Micro Commercial Co |
MCAC50N06Y-TP
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 50A | 4.5V, 10V | 3V @ 250µA | 29 nC @ 10 V | 1409 pF @ 30 V | ±20V | - | 78W | 8.2mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
||
Renesas Electronics Corporation |
N CHANNEL 30V, 30A, POWER SWITCH
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
YAGEO XSEMI |
MOSFET N-CH 100V 48.5A TO251S
|
pacchetto: - |
Azione3.000 |
|
MOSFET (Metal Oxide) | 100 V | 48.5A (Tc) | 6V, 10V | 4V @ 250µA | 56 nC @ 10 V | 2288 pF @ 80 V | ±20V | - | 1.13W (Ta), 50W (Tc) | 11mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251S | TO-251-3 Short Leads, IPAK, TO-251AA |
||
STMicroelectronics |
DISCRETE
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
AUTOMOTIVE P-CHANNEL 20 V (D-S)
|
pacchetto: - |
Azione14.520 |
|
MOSFET (Metal Oxide) | 20 V | 3.75A (Tc) | 2.5V, 4.5V | 1.3V @ 250µA | 5.5 nC @ 4.5 V | 330 pF @ 10 V | ±12V | - | 13.6W (Tc) | 125mOhm @ 2.4A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 8SOIC
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Transphorm |
GANFET N-CH 900V 15A TO220AB
|
pacchetto: - |
Request a Quote |
|
GaNFET (Cascode Gallium Nitride FET) | 900 V | 15A (Tc) | 10V | 2.6V @ 500µA | 10 nC @ 8 V | 780 pF @ 600 V | ±18V | - | 78W (Tc) | 205mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 350 V | 5.5A (Tc) | 10V | 4V @ 250µA | 35 nC @ 10 V | 600 pF @ 25 V | ±20V | - | 75W (Tc) | 1Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 43.5A (Tc) | 4.5V, 10V | 3V @ 250µA | 11.2 nC @ 10 V | 750 pF @ 20 V | ±20V | - | 4W (Ta), 46.9W (Tc) | 14.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 100V 110A TO268
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 4.5V @ 250µA | 260 nC @ 10 V | 10500 pF @ 25 V | ±20V | - | 600W (Tc) | 18mOhm @ 55A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 (IXTT) | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |