Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 80A TO-220
|
pacchetto: TO-220-3 |
Azione68.100 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 150µA | 96nC @ 10V | 3800pF @ 25V | ±20V | - | 215W (Tc) | 8 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 3A 6-SSOT
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione5.712 |
|
MOSFET (Metal Oxide) | 80V | 3A (Ta) | 6V, 10V | 4V @ 250µA | 18nC @ 10V | 634pF @ 40V | ±20V | - | 1.6W (Ta) | 77 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
||
IXYS |
MOSFET N-CH 75V 128A ISOPLUS220
|
pacchetto: ISOPLUS220? |
Azione3.888 |
|
MOSFET (Metal Oxide) | 75V | 128A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9900pF @ 25V | ±20V | - | 160W (Tc) | 4.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 55A TO-3PN
|
pacchetto: TO-3P-3, SC-65-3 |
Azione109.224 |
|
MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | ±25V | - | 214W (Tc) | 26 mOhm @ 27.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 50V 15A TO-252AA
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione279.396 |
|
MOSFET (Metal Oxide) | 50V | 15A (Tc) | 10V | 4V @ 250µA | 150nC @ 20V | 1150pF @ 25V | ±20V | - | 80W (Tc) | 150 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET N-CH 600V 31A SOT-227
|
pacchetto: SOT-227-4, miniBLOC |
Azione4.544 |
|
MOSFET (Metal Oxide) | 600V | 31A | 10V | 5V @ 2.5mA | 215nC @ 10V | 5890pF @ 25V | ±30V | - | 355W (Tc) | 150 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
Renesas Electronics America |
MOSFET N-CH 75V 70A TO220
|
pacchetto: TO-220-3 Full Pack |
Azione5.792 |
|
MOSFET (Metal Oxide) | 75V | 70A (Ta) | 10V | - | 56nC @ 10V | 4150pF @ 10V | ±20V | - | 25W (Tc) | 6.7 mOhm @ 35A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 1000V 1.4A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.336 |
|
MOSFET (Metal Oxide) | 1000V | 1.4A (Tc) | 10V | 4.5V @ 50µA | 17.8nC @ 10V | 450pF @ 25V | ±20V | - | 63W (Tc) | 11 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 60V SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione2.336 |
|
MOSFET (Metal Oxide) | 60V | 310mA (Ta) | 5V, 10V | 2V @ 250µA | 0.87nC @ 10V | 22pF @ 25V | ±20V | - | 370mW (Ta) | 3 Ohm @ 115mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8L
|
pacchetto: PowerPAK? SO-8 |
Azione5.520 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 150nC @ 20V | 7150pF @ 20V | +20V, -16V | - | 48W (Tc) | 1.7 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
ON Semiconductor |
MOSFET N-CH 60V 3A SOT223
|
pacchetto: TO-261-4, TO-261AA |
Azione7.808 |
|
MOSFET (Metal Oxide) | 60V | 3A (Ta) | 5V | 2V @ 250µA | 15nC @ 5V | 440pF @ 25V | ±15V | - | 1.3W (Ta) | 120 mOhm @ 1.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET P-CH 20V 15A 2X2 PQFN
|
pacchetto: 6-PowerVDFN |
Azione119.160 |
|
MOSFET (Metal Oxide) | 20V | 7.2A (Ta), 15A (Tc) | 2.5V, 4.5V | 1.1V @ 10µA | 12nC @ 10V | 877pF @ 10V | ±12V | - | 2.1W (Ta), 9.6W (Tc) | 31 mOhm @ 8.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 56A TO247
|
pacchetto: TO-247-3 |
Azione10.248 |
|
MOSFET (Metal Oxide) | 800V | 56A (Tc) | 10V | 4.5V @ 5.8mA | 350nC @ 10V | 14685pF @ 100V | ±20V | Super Junction | 500W (Tc) | 60 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
||
Diodes Incorporated |
MOSFET N-CH 30V 9.8A 8SO
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.448 |
|
MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 43nC @ 10V | 1849pF @ 15V | ±12V | Schottky Diode (Body) | 1.54W (Ta) | 13 mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET P-CH 20V 700MA SC59-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione420.000 |
|
MOSFET (Metal Oxide) | 20V | 700mA (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | - | 180pF @ 10V | ±12V | - | 500mW (Ta) | 300 mOhm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 120A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione32.802 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4V @ 1mA | 170nC @ 10V | 9900pF @ 50V | ±20V | - | 338W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 3.5A SOT-23F
|
pacchetto: SOT-23-3 Flat Leads |
Azione23.826 |
|
MOSFET (Metal Oxide) | 60V | 3.5A (Ta) | 4V, 10V | 2V @ 1mA | 15.1nC @ 10V | 660pF @ 10V | +10V, -20V | - | 2W (Ta) | 134 mOhm @ 1A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
||
Texas Instruments |
MOSFET N-CH 60V 100A 8SON
|
pacchetto: 8-PowerTDFN |
Azione15.360 |
|
MOSFET (Metal Oxide) | 60V | 17A (Ta), 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 36nC @ 10V | 2750pF @ 30V | ±20V | - | 3.2W (Ta), 116W (Tc) | 5.9 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 21A 8DFN
|
pacchetto: 8-PowerSMD, Flat Leads |
Azione231.900 |
|
MOSFET (Metal Oxide) | 30V | 21A (Ta), 34A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 45nC @ 10V | 1540pF @ 15V | ±20V | - | 3.1W (Ta), 31W (Tc) | 4 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
||
Central Semiconductor Corp |
MOSFET N-CH 20V 100MA SOT883VL
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.5V, 4V | 900mV @ 250µA | 0.57 nC @ 4.5 V | 9 pF @ 3 V | 10V | - | 100mW (Ta) | 3Ohm @ 10mA, 4V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883VL | SC-101, SOT-883 |
||
Microchip Technology |
MOSFET N-CH 500V 26A D3PAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 4V @ 1mA | 225 nC @ 10 V | 4440 pF @ 25 V | ±30V | - | 300W (Tc) | 200mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
||
Panjit International Inc. |
700V N-CHANNEL MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 6A (Ta) | 10V | 4V @ 250µA | 16.5 nC @ 10 V | 831 pF @ 25 V | ±30V | - | 128W (Tc) | 1.7Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
|
pacchetto: - |
Azione6.150 |
|
MOSFET (Metal Oxide) | 100 V | 33A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 11.9 nC @ 10 V | 683 pF @ 50 V | ±20V | - | 3.4W (Ta), 68W (Tc) | 32mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 129 nC @ 10 V | 4115 pF @ 25 V | ±16V | - | 260W (Tc) | 8mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 40V 160A TO220AB
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 160A (Tc) | - | 3V @ 250µA | 140 nC @ 5 V | 6590 pF @ 25 V | ±20V | - | 200W (Tc) | 4mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 300V 430MA SOT23
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 300 V | 430mA (Ta) | 4.5V, 10V | 3V @ 250µA | 4.8 nC @ 10 V | 174 pF @ 25 V | ±20V | - | 360mW (Ta) | 4Ohm @ 300mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V SO-8 T&R 2
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 7.2A (Ta) | 4.5V, 10V | 1.8V @ 250µA | 45 nC @ 10 V | 2083 pF @ 20 V | ±20V | - | 1.5W (Ta) | 25mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |