Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223
|
pacchetto: TO-261-4, TO-261AA |
Azione7.440 |
|
MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | ±20V | - | 1.8W (Ta) | 120 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 25V 30A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.176 |
|
MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 2V @ 20µA | 8.3nC @ 5V | 1043pF @ 15V | ±20V | - | 46W (Tc) | 13.6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 59A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.312 |
|
MOSFET (Metal Oxide) | 60V | 59A (Tc) | 4.5V, 10V | 3V @ 250µA | 53nC @ 10V | 1765pF @ 25V | ±16V | - | 130W (Tc) | 17 mOhm @ 59A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET P-CH 45V 0.09A SOT23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione5.312 |
|
MOSFET (Metal Oxide) | 45V | 90mA (Ta) | 10V | 3.5V @ 1mA | - | 25pF @ 10V | ±20V | - | 330mW (Ta) | 14 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Honeywell Microelectronics & Precision Sensors |
MOSFET N-CH 55V 8-DIP
|
pacchetto: 8-CDIP Exposed Pad |
Azione2.496 |
|
MOSFET (Metal Oxide) | 55V | - | 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 10V | - | 50W (Tj) | 400 mOhm @ 100mA, 5V | - | Through Hole | - | 8-CDIP Exposed Pad |
||
IXYS |
MOSFET N-CH 500V 47A SOT-227B
|
pacchetto: SOT-227-4, miniBLOC |
Azione5.408 |
|
MOSFET (Metal Oxide) | 500V | 47A | 10V | 4.5V @ 8mA | 330nC @ 10V | 9400pF @ 25V | ±20V | - | 500W (Tc) | 90 mOhm @ 27.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 200V 71A ISOPLUS247
|
pacchetto: ISOPLUS247? |
Azione103.464 |
|
MOSFET (Metal Oxide) | 200V | 71A (Tc) | 10V | 4V @ 4mA | 180nC @ 10V | 4600pF @ 25V | ±20V | - | 310W (Tc) | 28 mOhm @ 80A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -30V,
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.304 |
|
MOSFET (Metal Oxide) | 30V | 34A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 56nC @ 10V | 3216pF @ 15V | ±20V | - | 14W (Tc) | 8.5 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -30V,
|
pacchetto: SOT-23-6 |
Azione304.380 |
|
MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 3V @ 250µA | 27nC @ 10V | 551.57pF @ 15V | ±20V | - | 2W (Ta) | 60 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione4.400 |
|
MOSFET (Metal Oxide) | 20V | 4.9A | 1.8V, 4.5V | 1.2V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | ±12V | - | 1.25W (Ta) | 33 mOhm @ 4.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 3.3A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione60.012 |
|
MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 3W (Ta), 36W (Tc) | 1.5 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N CH 800V 14A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione9.624 |
|
MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 5V @ 100µA | 32nC @ 10V | 1100pF @ 100V | ±30V | - | 190W (Tc) | 375 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET N-CH 30V 17.1A VDFN30308
|
pacchetto: 8-PowerWDFN |
Azione2.000 |
|
MOSFET (Metal Oxide) | 30V | 17.1A (Ta), 46.2A (Tc) | 4.5V, 10V | 3V @ 250µA | 22.6nC @ 10V | 1320pF @ 15V | ±20V | - | 1.1W (Ta) | 6.5 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | V-DFN3030-8 | 8-PowerWDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 75V 45A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione172.596 |
|
MOSFET (Metal Oxide) | 75V | 45A (Tc) | 10V | 4V @ 1mA | 48nC @ 10V | 2385pF @ 25V | ±20V | - | 158W (Tc) | 26 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 40V 120A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione19.704 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4.5V @ 250µA | 377nC @ 10V | 20000pF @ 25V | ±20V | - | 300W (Tc) | 1.7 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 100V 12A TO220FP
|
pacchetto: TO-220-3 Full Pack |
Azione46.320 |
|
MOSFET (Metal Oxide) | 100V | 12A (Tc) | 4V, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | ±16V | - | 41W (Tc) | 100 mOhm @ 9A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
||
Texas Instruments |
MOSFET N-CH 100V 50A 8VSON
|
pacchetto: 8-PowerVDFN |
Azione27.036 |
|
MOSFET (Metal Oxide) | 100V | 50A (Ta) | 6V, 10V | 3.6V @ 250µA | 21nC @ 10V | 1680pF @ 50V | ±20V | - | 2.8W (Ta), 83W (Tc) | 14.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerVDFN |
||
Nexperia USA Inc. |
MOS DISCRETES
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 30 V (D-S)
|
pacchetto: - |
Azione9.000 |
|
MOSFET (Metal Oxide) | 30 V | 9A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 12 nC @ 10 V | 535 pF @ 25 V | ±20V | - | 13.6W (Tc) | 19mOhm @ 3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerPAK®SC-70W-6 | PowerPAK® SC-70-6 |
||
Micro Commercial Co |
P-CHANNEL MOSFET,SOT-23
|
pacchetto: - |
Azione6.825 |
|
MOSFET (Metal Oxide) | 30 V | 4.1A | 4.5V, 10V | 3V @ 250µA | - | 700 pF @ 15 V | ±20V | - | 1.3W | 60mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Rohm Semiconductor |
MOSFET N-CH 60V 5.5A HUML2020L8
|
pacchetto: - |
Azione45.528 |
|
MOSFET (Metal Oxide) | 60 V | 5.5A (Ta) | 4.5V, 10V | 2.7V @ 1mA | 7.8 nC @ 10 V | 400 pF @ 30 V | ±20V | - | 2W (Ta) | 43mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | HUML2020L8 | 8-PowerUDFN |
||
MOSLEADER |
N 20V SOT-23
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 300mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 0.82 nC @ 4.5 V | 34 pF @ 25 V | ±30V | - | 500mW (Ta) | 3Ohm @ 600mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 5A (Tc) | 10V | 4V @ 250µA | 15 nC @ 10 V | 450 pF @ 25 V | ±20V | - | 40W (Tc) | 800mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Cambridge GaN Devices |
650V GAN HEMT, 130MOHM, DFN5X6.
|
pacchetto: - |
Azione14.655 |
|
GaNFET (Gallium Nitride) | 650 V | 12A (Tc) | 9V, 20V | 4.2V @ 4.2mA | 2.3 nC @ 12 V | - | +20V, -1V | Current Sensing | - | 182mOhm @ 900mA, 12V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerVDFN |
||
Microchip Technology |
TRANS SJT 1700V D3PAK
|
pacchetto: - |
Azione1.548 |
|
SiCFET (Silicon Carbide) | 1700 V | 6A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
||
Infineon Technologies |
MOSFET N-CH 600V 23A HDSOP-10
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 4V @ 390µA | 34 nC @ 10 V | 1320 pF @ 400 V | ±20V | - | 139W (Tc) | 102mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
||
onsemi |
MOSFET N-CH 50V 220MA SOT23-3
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 220mA (Ta) | 4.5V, 10V | 1.5V @ 1mA | 2.4 nC @ 10 V | 27 pF @ 25 V | ±20V | - | 360mW (Ta) | 3.5Ohm @ 220mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | EFCP1313-4CC-037 | 4-XFBGA |