Transistor - FET, MOSFET - Singoli

IRF7706TRPBF

Infineon Technologies

MOSFET P-CH 30V 7A 8-TSSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.51W (Ta)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

IRF3805LPBF

Infineon Technologies

MOSFET N-CH 55V 75A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF1018ESLPBF

Infineon Technologies

MOSFET N-CH 60V 79A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

IRL7833S

Infineon Technologies

MOSFET N-CH 30V 150A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4170pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 38A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SUM33N20-60P-E3

Vishay Siliconix

MOSFET N-CH 200V 33A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 113nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 3.12W (Ta), 156W (Tc)
• Rds On (Max) @ Id, Vgs: 59 mOhm @ 20A, 15V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2Pak)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PHT11N06LT,135

NXP

MOSFET N-CH 55V 4.9A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
• Vgs (Max): ±13V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

pacchetto: TO-261-4, TO-261AA

ISL9N302AS3

Fairchild/ON Semiconductor

MOSFET N-CH 30V 75A TO-262AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 345W (Tc)
• Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-262AA
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

FQU4N25TU

Fairchild/ON Semiconductor

MOSFET N-CH 250V 3A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
• Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

PH3120L,115

Nexperia USA Inc.

MOSFET N-CH 20V 100A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 48.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4457pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 62.5W (Tc)
• Rds On (Max) @ Id, Vgs: 2.65 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

pacchetto: SC-100, SOT-669

IPU06N03LAGXK

Infineon Technologies

MOSFET N-CH 25V 50A TO-251

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacchetto: TO-251-3 Short Leads, IPak, TO-251AA

IPI47N10S33AKSA1

Infineon Technologies

MOSFET N-CH 100V 47A TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 175W (Tc)
• Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA

IXFH12N100P

IXYS

MOSFET N-CH 1000V 12A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4080pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 463W (Tc)
• Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

pacchetto: TO-247-3

FDMS8026S

Fairchild/ON Semiconductor

MOSFET N-CH 30V POWER56

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2280pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
• Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Power56
• Package / Case: 8-PowerTDFN

pacchetto: 8-PowerTDFN

IRF6623

Infineon Technologies

MOSFET N-CH 20V 16A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? ST
• Package / Case: DirectFET? Isometric ST

pacchetto: DirectFET? Isometric ST

FCH190N65F_F155

Fairchild/ON Semiconductor

MOSFET N-CH 650V 20.6A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3225pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 Long Leads
• Package / Case: TO-247-3

pacchetto: TO-247-3

SI4896DY-T1-E3

Vishay Siliconix

MOSFET N-CH 80V 6.7A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta)
• Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: 8-SOIC (0.154", 3.90mm Width)

ZXMP10A17GQTA

Diodes Incorporated

MOSFET P-CH 100V SOT223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

pacchetto: TO-261-4, TO-261AA

2SK4180-T1-A

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

Request a Quote

SI6466DQ

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 15mOhm @ 7.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

pacchetto: -

Request a Quote

TP65H035WSQA

Transphorm

GANFET N-CH 650V 47.2A TO247-3

• FET Type: N-Channel
• Technology: GaNFET (Cascode Gallium Nitride FET)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 187W (Tc)
• Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

pacchetto: -

JANSR2N7591U3

Microchip Technology

RH MOSFET _ U3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 16A
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: U3 (SMD-0.5)
• Package / Case: 3-SMD, No Lead

pacchetto: -

Request a Quote

NVTFS6H880NWFTAG

onsemi

MOSFET N-CH 80V 6.3A/21A 8WDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
• Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WDFN (3.3x3.3)
• Package / Case: 8-PowerWDFN

pacchetto: -

Request a Quote

SQD40052EL_GE3

Vishay Siliconix

AUTOMOTIVE N-CHANNEL 40 V (D-S)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 62W (Tc)
• Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacchetto: -

5HN02N

Sanyo

N-CHANNEL SILICON MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacchetto: -

Request a Quote

IRFC3205B

Infineon Technologies

MOSFET 55V 110A DIE

• FET Type: -
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55 V
• Current - Continuous Drain (Id) @ 25°C: 110A
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 8mOhm @ 110A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

pacchetto: -

Request a Quote

IMZA65R030M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET, PG-TO247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
• Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
• Vgs (Max): +20V, -2V
• FET Feature: -
• Power Dissipation (Max): 197W (Tc)
• Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4-3
• Package / Case: TO-247-4

pacchetto: -

STO52N60DM6

STMicroelectronics

DISCRETE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2468 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 305W (Tc)
• Rds On (Max) @ Id, Vgs: 78mOhm @ 22.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TOLL (HV)
• Package / Case: 8-PowerSFN

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APT10035JFLL

Microchip Technology

MOSFET N-CH 1000V 25A ISOTOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000 V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 370mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: ISOTOP®
• Package / Case: SOT-227-4, miniBLOC

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