Pagina 1444 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  1.444/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFR1010ZTRRPBF
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.648
MOSFET (Metal Oxide)
55V
42A (Tc)
10V
4V @ 100µA
95nC @ 10V
2840pF @ 25V
±20V
-
140W (Tc)
7.5 mOhm @ 42A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
BSO201SPNTMA1
Infineon Technologies

MOSFET P-CH 20V 14.9A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 128nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5962pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.912
MOSFET (Metal Oxide)
20V
14.9A (Ta)
2.5V, 4.5V
1.2V @ 250µA
128nC @ 4.5V
5962pF @ 15V
±12V
-
2.5W (Ta)
8 mOhm @ 14.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
CPH3456-TL-H
ON Semiconductor

MOSFET N-CH 20V 3.5A CPH3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 71 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.672
MOSFET (Metal Oxide)
20V
3.5A (Ta)
1.8V, 4.5V
-
2.8nC @ 4.5V
260pF @ 10V
±12V
-
1W (Ta)
71 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
3-CPH
TO-236-3, SC-59, SOT-23-3
GP1M006A065F
Global Power Technologies Group

MOSFET N-CH 650V 5.5A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione3.504
MOSFET (Metal Oxide)
650V
5.5A (Tc)
10V
4V @ 250µA
17nC @ 10V
1177pF @ 25V
±30V
-
39W (Tc)
1.6 Ohm @ 2.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot NTMS4107NR2G
ON Semiconductor

MOSFET N-CH 30V 11A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 930mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione781.416
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
2.5V @ 250µA
45nC @ 4.5V
6000pF @ 15V
±20V
-
930mW (Ta)
4.5 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
FQB27N25TM_AM002
Fairchild/ON Semiconductor

MOSFET N-CH 250V 25.5A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 25.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.072
MOSFET (Metal Oxide)
250V
25.5A (Tc)
10V
5V @ 250µA
65nC @ 10V
2450pF @ 25V
±30V
-
3.13W (Ta), 180W (Tc)
110 mOhm @ 12.75A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD6N50CTF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 4.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 61W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.080
MOSFET (Metal Oxide)
500V
4.5A (Tc)
10V
4V @ 250µA
25nC @ 10V
700pF @ 25V
±30V
-
2.5W (Ta), 61W (Tc)
1.2 Ohm @ 2.25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IRF740LCSTRL
Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.488
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
4V @ 250µA
39nC @ 10V
1100pF @ 25V
±30V
-
-
550 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRF2903ZPBF
Infineon Technologies

MOSFET N-CH 30V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione7.212
MOSFET (Metal Oxide)
30V
75A (Tc)
10V
4V @ 150µA
240nC @ 10V
6320pF @ 25V
±20V
-
290W (Tc)
2.4 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFH7110TRPBF
Infineon Technologies

MOSFET N CH 100V 11A PQFN 5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-TQFN Exposed Pad
pacchetto: 8-TQFN Exposed Pad
Azione3.264
MOSFET (Metal Oxide)
100V
11A (Ta), 58A (Tc)
10V
4V @ 100µA
87nC @ 10V
3240pF @ 25V
±20V
-
3.6W (Ta), 104W (Tc)
13.5 mOhm @ 35A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-TQFN Exposed Pad
FCA47N60_F109
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione3.248
MOSFET (Metal Oxide)
600V
47A (Tc)
10V
5V @ 250µA
270nC @ 10V
8000pF @ 25V
±30V
-
417W (Tc)
70 mOhm @ 23.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
IXTY08N100P
IXYS

MOSFET N-CH 1000V 800MA TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.568
MOSFET (Metal Oxide)
1000V
800mA (Tc)
10V
4V @ 50µA
11.3nC @ 10V
240pF @ 25V
±20V
-
42W (Tc)
20 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
TPN2R503NC,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 30V 40A 8TSON-ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
pacchetto: 8-PowerVDFN
Azione5.488
MOSFET (Metal Oxide)
30V
40A (Ta)
4.5V, 10V
2.3V @ 500µA
40nC @ 10V
2230pF @ 15V
±20V
-
700mW (Ta), 35W (Tc)
2.5 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
8-TSON Advance (3.3x3.3)
8-PowerVDFN
IPB80N06S209ATMA2
Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 125µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.952
MOSFET (Metal Oxide)
55V
80A (Tc)
10V
4V @ 125µA
80nC @ 10V
2360pF @ 25V
±20V
-
190W (Tc)
8.8 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSR302NL6327HTSA1
Infineon Technologies

MOSFET N-CH 30V 3.7A SC-59

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione46.476
MOSFET (Metal Oxide)
30V
3.7A (Ta)
4.5V, 10V
2V @ 30µA
6.6nC @ 5V
750pF @ 15V
±20V
-
500mW (Ta)
23 mOhm @ 3.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SC-59
TO-236-3, SC-59, SOT-23-3
IXTA64N10L2
IXYS

N-CHANNEL: LINEAR POWER MOSFETS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 64A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.320
MOSFET (Metal Oxide)
100V
64A
10V
4.5V @ 250µA
100nC @ 10V
3620pF @ 25V
±30V
-
357W (Tc)
32 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AA
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF6218STRLPBF
Infineon Technologies

MOSFET P-CH 150V 27A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione154.536
MOSFET (Metal Oxide)
150V
27A (Tc)
10V
5V @ 250µA
110nC @ 10V
2210pF @ 25V
±20V
-
250W (Tc)
150 mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot MTM231232LBF
Panasonic Electronic Components

MOSFET P-CH 20V 3A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3 (SOT323)
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione373.800
MOSFET (Metal Oxide)
20V
3A (Ta)
2.5V, 4.5V
1.3V @ 1mA
-
1000pF @ 10V
±10V
-
500mW (Ta)
55 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
2SK3299B-S19-AY
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIA472EDJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SC70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 19.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 10.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6 Single
  • Package / Case: PowerPAK® SC-70-6
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
12A (Tc)
2.5V, 4.5V
1.5V @ 250µA
36 nC @ 10 V
1265 pF @ 15 V
±12V
-
19.2W (Tc)
20mOhm @ 10.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Single
PowerPAK® SC-70-6
APT50M75JLL
Microchip Technology

MOSFET N-CH 500V 51A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
500 V
51A (Tc)
-
5V @ 2.5mA
125 nC @ 10 V
5590 pF @ 25 V
-
-
-
75mOhm @ 25.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
PJQ4466AP-AU_R2_000A1
Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN3333-8
  • Package / Case: 8-PowerVDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
60 V
6A (Ta), 33A (Tc)
4.5V, 10V
2.5V @ 250µA
28 nC @ 10 V
1680 pF @ 20 V
±20V
-
2.4W (Ta), 53W (Tc)
21mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DFN3333-8
8-PowerVDFN
STF7N60DM2
STMicroelectronics

MOSFET N-CH 600V 6A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione5.982
MOSFET (Metal Oxide)
600 V
6A (Tc)
10V
4.75V @ 250µA
7.5 nC @ 10 V
324 pF @ 100 V
±25V
-
25W (Tc)
900mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
APT20M18LVRG
Microchip Technology

MOSFET N-CH 200V 100A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
200 V
100A (Tc)
-
4V @ 2.5mA
330 nC @ 10 V
9880 pF @ 25 V
-
-
-
18mOhm @ 50A, 10V
-
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
RQA0011DNS-G0
Renesas Electronics Corporation

MOSFET N-CH 16V 3.8A 2HWSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16 V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 750mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 2-HWSON (5x4)
  • Package / Case: 2-DFN Exposed Pad
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
16 V
3.8A (Ta)
-
750mV @ 1mA
-
102 pF @ 0 V
±5V
-
15W (Tc)
-
150°C
Surface Mount
2-HWSON (5x4)
2-DFN Exposed Pad
NVHL045N065SC1
onsemi

SIC MOS TO247-3L 650V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.3V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
  • Vgs (Max): +22V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 291W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
66A (Tc)
15V, 18V
4.3V @ 8mA
105 nC @ 18 V
1870 pF @ 325 V
+22V, -8V
-
291W (Tc)
50mOhm @ 25A, 18V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
PJD50N04_L2_00001
Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione5.850
MOSFET (Metal Oxide)
40 V
9.6A (Ta), 50A (Tc)
4.5V, 10V
2.5V @ 250µA
22 nC @ 10 V
1258 pF @ 25 V
±20V
-
2W (Ta), 54W (Tc)
9.5mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SQJ431AEP-T1_GE3
Vishay Siliconix

MOSFET P-CH 200V 9.4A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
200 V
9.4A (Tc)
6V, 10V
3.5V @ 250µA
85 nC @ 10 V
3700 pF @ 25 V
±20V
-
68W (Tc)
305mOhm @ 3.8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8