Pagina 1378 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  1.378/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFBL3315
Infineon Technologies

MOSFET N-CH 150V 21A SUPER D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SUPER D2-PAK
  • Package / Case: Super D2-Pak
pacchetto: Super D2-Pak
Azione7.456
MOSFET (Metal Oxide)
150V
21A (Ta)
-
-
-
-
-
-
-
-
-
Surface Mount
SUPER D2-PAK
Super D2-Pak
IRF520NL
Infineon Technologies

MOSFET N-CH 100V 9.7A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione3.456
MOSFET (Metal Oxide)
100V
9.7A (Tc)
10V
4V @ 250µA
25nC @ 10V
330pF @ 25V
±20V
-
3.8W (Ta), 48W (Tc)
200 mOhm @ 5.7A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
NTDV2955-1G
ON Semiconductor

MOSFET P-CH 60V 12A IPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione4.704
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
PMN28UN,135
Nexperia USA Inc.

MOSFET N-CH 12V 5.7A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
pacchetto: SC-74, SOT-457
Azione6.000
MOSFET (Metal Oxide)
12V
5.7A (Tc)
1.8V, 4.5V
700mV @ 1mA
10.1nC @ 4.5V
740pF @ 10V
±8V
-
1.75W (Tc)
34 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457
hot NTMFS4701NT1G
ON Semiconductor

MOSFET N-CH 30V 7.7A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione186.192
MOSFET (Metal Oxide)
30V
7.7A (Ta)
4.5V, 10V
3V @ 250µA
15nC @ 4.5V
1280pF @ 24V
±20V
-
900mW (Ta)
8 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot IRLZ44S
Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.336
MOSFET (Metal Oxide)
60V
50A (Tc)
4V, 5V
2V @ 250µA
66nC @ 5V
3300pF @ 25V
±10V
-
3.7W (Ta), 150W (Tc)
28 mOhm @ 31A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PH5330E,115
NXP

MOSFET N-CH 30V 80A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione5.344
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2.5V @ 1mA
21nC @ 5V
2010pF @ 10V
±20V
-
62.5W (Tc)
5.7 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
STI200N6F3
STMicroelectronics

MOSFET N-CH 60V 120A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6265pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione3.472
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 250µA
101nC @ 10V
6265pF @ 25V
±20V
-
330W (Tc)
3.8 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
IXFT80N10Q
IXYS

MOSFET N-CH 100V 80A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Azione3.520
MOSFET (Metal Oxide)
100V
80A (Tc)
10V
4V @ 4mA
180nC @ 10V
4500pF @ 25V
±20V
-
360W (Tc)
15 mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
NTTFS4C13NTAG
ON Semiconductor

MOSFET N-CH 30V 38A U8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 780mW (Ta), 21.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione2.288
MOSFET (Metal Oxide)
30V
7.2A (Ta)
4.5V, 10V
2.1V @ 250µA
7.8nC @ 4.5V
770pF @ 15V
±20V
-
780mW (Ta), 21.5W (Tc)
9.4 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
DMN67D8LW-13
Diodes Incorporated

MOSFET N-CH 60V SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione2.992
MOSFET (Metal Oxide)
60V
240mA (Ta)
5V, 10V
2.5V @ 250µA
0.82nC @ 10V
22pF @ 25V
±30V
-
320mW (Ta)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SQM90142E_GE3
Vishay Siliconix

MOSFET N-CH 200V 95A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.536
MOSFET (Metal Oxide)
200V
95A (Tc)
10V
3.5V @ 250µA
85nC @ 10V
4200pF @ 25V
±20V
-
375W (Tc)
15.3 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB8442_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 28A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 254W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.736
MOSFET (Metal Oxide)
40V
28A (Ta)
10V
4V @ 250µA
235nC @ 10V
12200pF @ 25V
±20V
-
254W (Tc)
5 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDMS7570S
Fairchild/ON Semiconductor

MOSFET N-CH 25V 28A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4515pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione150.576
MOSFET (Metal Oxide)
25V
28A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
69nC @ 10V
4515pF @ 13V
±20V
-
2.5W (Ta), 83W (Tc)
1.95 mOhm @ 28A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
hot AOU4N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 4A TO251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione63.168
MOSFET (Metal Oxide)
600V
4A (Tc)
10V
4.5V @ 250µA
14.5nC @ 10V
640pF @ 25V
±30V
-
104W (Tc)
2.3 Ohm @ 2A, 10V
-50°C ~ 150°C (TJ)
Through Hole
TO-251-3
TO-251-3 Short Leads, IPak, TO-251AA
hot AON6370
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 23A DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Ta), 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: 8-PowerSMD, Flat Leads
Azione16.932
MOSFET (Metal Oxide)
30V
23A (Ta), 47A (Tc)
4.5V, 10V
2.2V @ 250µA
13nC @ 10V
840pF @ 15V
±20V
-
6.2W (Ta), 26W (Tc)
7.2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
STD9N65DM6AG
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
9A (Tc)
10V
4.75V @ 250µA
11.7 nC @ 10 V
510 pF @ 100 V
±25V
-
89W (Tc)
440mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
RQA0005QXDQS-H1
Renesas Electronics Corporation

MOSFET N-CH 16V 800MA UPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16 V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 750mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 0 V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 9W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UPAK
  • Package / Case: TO-243AA
pacchetto: -
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MOSFET (Metal Oxide)
16 V
800mA (Ta)
-
750mV @ 1mA
-
22 pF @ 0 V
±5V
-
9W (Tc)
-
150°C
Surface Mount
UPAK
TO-243AA
SI2338DS-T1-BE3
Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione7.095
MOSFET (Metal Oxide)
30 V
5.5A (Ta), 6A (Tc)
4.5V, 10V
2.5V @ 250µA
13 nC @ 10 V
424 pF @ 15 V
±20V
-
1.3W (Ta), 2.5W (Tc)
28mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
RJK5035DPP-A0-T2
Renesas Electronics Corporation

MOSFET N-CH 600V 5A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 29W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione6.075
MOSFET (Metal Oxide)
600 V
5A (Ta)
10V
-
19 nC @ 10 V
600 pF @ 25 V
±30V
-
29W (Ta)
1.6Ohm @ 2.5A, 10V
150°C
Through Hole
TO-220FP
TO-220-3 Full Pack
MCQ12N10Y-TP
Micro Commercial Co

N-CHANNEL MOSFET,SOP-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione8.910
MOSFET (Metal Oxide)
100 V
12A
10V
4V @ 250µA
16 nC @ 10 V
1135 pF @ 50 V
±20V
-
3.1W
17mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
DMTH43M8LFVWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2737 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
pacchetto: -
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MOSFET (Metal Oxide)
40 V
23A (Ta), 96A (Tc)
4.5V, 10V
2.5V @ 250µA
36.9 nC @ 10 V
2737 pF @ 20 V
±20V
-
3.6W (Ta), 65W (Tc)
4.3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
SQ7415AEN-T1_BE3
Vishay Siliconix

MOSFET P-CH 60V 16A 1212-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
pacchetto: -
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MOSFET (Metal Oxide)
60 V
16A (Tc)
4.5V, 10V
2.5V @ 250µA
38 nC @ 10 V
1385 pF @ 25 V
±20V
-
53W (Tc)
65mOhm @ 5.7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
GPI65007DF56
GaNPower

GaNFET N-CH 650V 7A DFN5x6

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Drive Voltage (Max Rds On, Min Rds On): 6V
  • Vgs(th) (Max) @ Id: 1.5V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
  • Input Capacitance (Ciss) (Max) @ Vds: 76.1 pF @ 400 V
  • Vgs (Max): +7.5V, -12V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
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GaNFET (Gallium Nitride)
650 V
7A
6V
1.5V @ 3.5mA
2.1 nC @ 6 V
76.1 pF @ 400 V
+7.5V, -12V
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
-
-
QM3001K-ML
MOSLEADER

Single P -30V -3.3A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PJD9P06A_L2_00001
Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 15.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione3.096
MOSFET (Metal Oxide)
60 V
2.5A (Ta), 7A (Tc)
4.5V, 10V
2.5V @ 250µA
8.3 nC @ 10 V
430 pF @ 30 V
±20V
-
2W (Ta), 15.6W (Tc)
190mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
G700P06H
Goford Semiconductor

MOSFET P-CH 60V 5A SOT-223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: -
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MOSFET (Metal Oxide)
-
5A (Tc)
4.5V, 10V
2.5V @ 250µA
-
-
±20V
-
3.1W (Tc)
75mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
IPB65R660CFDATMA1
Infineon Technologies

MOSFET N-CH 650V 6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
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MOSFET (Metal Oxide)
650 V
6A (Tc)
10V
4.5V @ 200µA
22 nC @ 10 V
615 pF @ 100 V
±20V
-
62.5W (Tc)
660mOhm @ 2.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB