Pagina 1371 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  1.371/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
AUIRF2903ZS
Infineon Technologies

MOSFET N-CH 30V 235A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione2.368
MOSFET (Metal Oxide)
30V
160A (Tc)
10V
4V @ 150µA
240nC @ 10V
6320pF @ 25V
±20V
-
231W (Tc)
2.4 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSS84AKS/ZLX
Nexperia USA Inc.

MOSFET N-CH SC-88

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione7.248
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
JAN2N6788U
Microsemi Corporation

MOSFET N-CH 18-LCC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-BQFN Exposed Pad
pacchetto: 18-BQFN Exposed Pad
Azione6.128
MOSFET (Metal Oxide)
100V
4.5A (Tc)
10V
4V @ 250µA
18nC @ 10V
-
±20V
-
800mW (Tc)
350 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
18-ULCC (9.14x7.49)
18-BQFN Exposed Pad
FQPF7N65C_F105
Fairchild/ON Semiconductor

MOSFET N-CH 650V 7A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1245pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione3.440
MOSFET (Metal Oxide)
650V
7A (Tc)
10V
4V @ 250µA
36nC @ 10V
1245pF @ 25V
±30V
-
52W (Tc)
1.4 Ohm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot IXTP76N075T
IXYS

MOSFET N-CH 75V 76A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2580pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione60.132
MOSFET (Metal Oxide)
75V
76A (Tc)
10V
4V @ 50µA
57nC @ 10V
2580pF @ 25V
±20V
-
176W (Tc)
12 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FDZ208P
Fairchild/ON Semiconductor

MOSFET P-CH 30V 12.5A BGA

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2409pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 30-BGA (4x3.5)
  • Package / Case: 30-WFBGA
pacchetto: 30-WFBGA
Azione18.372
MOSFET (Metal Oxide)
30V
12.5A (Ta)
4.5V, 10V
3V @ 250µA
35nC @ 5V
2409pF @ 15V
±25V
-
2.2W (Ta)
10.5 mOhm @ 12.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
30-BGA (4x3.5)
30-WFBGA
hot ZVP4424GTC
Diodes Incorporated

MOSFET P-CH 240V 0.48A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 240V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±40V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 9 Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione238.656
MOSFET (Metal Oxide)
240V
480mA (Ta)
3.5V, 10V
2V @ 1mA
-
200pF @ 25V
±40V
-
2.5W (Ta)
9 Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
IPA057N08N3GXKSA1
Infineon Technologies

MOSFET N-CH 80V 60A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione20.220
MOSFET (Metal Oxide)
80V
60A (Tc)
6V, 10V
3.5V @ 90µA
69nC @ 10V
4750pF @ 40V
±20V
-
39W (Tc)
5.7 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
SUA70090E-E3
Vishay Siliconix

MOSFET N-CH 100V 42.8A TO220 FPK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 42.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione20.640
MOSFET (Metal Oxide)
100V
42.8A (Tc)
7.5V, 10V
4V @ 250µA
50nC @ 10V
1950pF @ 50V
±20V
-
35.7W (Tc)
9.3 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
IPD50N06S4L12ATMA2
Infineon Technologies

MOSFET N-CH 60V 50A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.384
MOSFET (Metal Oxide)
60V
50A (Tc)
4.5V, 10V
2.2V @ 20µA
40nC @ 10V
2890pF @ 25V
±16V
-
50W (Tc)
12 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPak (2 Leads + Tab), SC-63
PMZB150UNEYL
Nexperia USA Inc.

MOSFET N-CH 20V SOT883

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1006B-3
  • Package / Case: 3-XFDFN
pacchetto: 3-XFDFN
Azione232.944
MOSFET (Metal Oxide)
20V
1.5A (Ta)
1.5V, 4.5V
950mV @ 250µA
1.6nC @ 4.5V
93pF @ 10V
±8V
-
350mW (Ta), 6.25W (Tc)
200 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006B-3
3-XFDFN
PJA3414_R1_00001
Panjit International Inc.

SOT-23, MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 5.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
20 V
5.2A (Ta)
1.8V, 4.5V
1.2V @ 250µA
4.1 nC @ 4.5 V
396 pF @ 10 V
±12V
-
1.25W (Ta)
36mOhm @ 5.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
IXTY01N100-TRL
IXYS

MOSFET N-CH 1000V 100MA TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
100mA (Tc)
10V
4.5V @ 25µA
6.9 nC @ 10 V
54 pF @ 25 V
±20V
-
25W (Tc)
80Ohm @ 50mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
2SJ128-AZ
Renesas Electronics Corporation

POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMTH10H4M6SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 115A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4327 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
21A (Ta), 115A (Tc)
10V
4V @ 250µA
66 nC @ 10 V
4327 pF @ 50 V
±20V
-
4.7W (Ta), 136W (Tc)
4.9mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
MCTL270N04Y-TP
Micro Commercial Co

N-CHANNEL MOSFET, TOLL-8L

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 391W (Tj)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL-8L
  • Package / Case: 8-PowerSFN
pacchetto: -
Azione11.970
MOSFET (Metal Oxide)
40 V
270A (Tc)
6V, 10V
4.4V @ 250µA
135.6 nC @ 10 V
8010 pF @ 25 V
±20V
-
391W (Tj)
2mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TOLL-8L
8-PowerSFN
RJK6035DPP-A0-T2
Renesas Electronics Corporation

MOSFET N-CH 500V 1.2A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione8.325
MOSFET (Metal Oxide)
500 V
-
8V, 10V
-
-
-
±30V
-
-
-
-
Through Hole
TO-220FP
TO-220-3 Full Pack
IPP129N10NF2SAKMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.9mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
pacchetto: -
Azione3.003
MOSFET (Metal Oxide)
100 V
12A (Ta), 52A (Tc)
6V, 10V
3.8V @ 30µA
28 nC @ 10 V
1300 pF @ 50 V
±20V
-
3.8W (Ta), 71W (Tc)
12.9mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
DI110N04PQ-AQ
Diotec Semiconductor

MOSFET, POWERQFN 5X6, 40V, 110A,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-QFN (5x6)
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione14.526
MOSFET (Metal Oxide)
40 V
110A (Tc)
4.5V, 10V
2.5V @ 250µA
48 nC @ 10 V
2980 pF @ 25 V
±20V
-
45W (Tc)
2.5mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-QFN (5x6)
8-PowerTDFN
DMPH4013SPS-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4763 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
pacchetto: -
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MOSFET (Metal Oxide)
40 V
69A (Tc)
4.5V, 10V
3V @ 250µA
87 nC @ 10 V
4763 pF @ 20 V
±20V
-
1.5W (Ta)
13mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
GSFL1004
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 3A, 100V,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.78W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 2A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: -
Azione18.000
MOSFET (Metal Oxide)
100 V
3A (Tc)
4.5V, 10V
2.5V @ 250µA
21 nC @ 10 V
1190 pF @ 50 V
±20V
-
1.78W (Tc)
185mOhm @ 2A, 10V
-50°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
RJK0236DPA-00-J5A
Renesas Electronics Corporation

MOSFET N-CH 25V 50A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6130 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-WFDFN Exposed Pad
pacchetto: -
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MOSFET (Metal Oxide)
25 V
50A (Ta)
-
-
31 nC @ 4.5 V
6130 pF @ 10 V
-
-
50W (Tc)
1.8mOhm @ 25A, 10V
150°C (TJ)
Surface Mount
8-DFN (5x6)
8-WFDFN Exposed Pad
BUK9M20-60ELX
Nexperia USA Inc.

SINGLE N-CHANNEL 60 V, 13 MOHM L

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2941 pF @ 25 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 79.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
pacchetto: -
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MOSFET (Metal Oxide)
60 V
40A (Ta)
4.5V, 10V
2.1V @ 1mA
56 nC @ 10 V
2941 pF @ 25 V
±10V
-
79.4W (Tc)
21mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
ISC0803NLSATMA1
Infineon Technologies

MOSFET N-CH 100V 8.8A/37A 8TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 18µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione7.299
MOSFET (Metal Oxide)
100 V
8.8A (Ta), 37A (Tc)
4.5V, 10V
2.3V @ 18µA
15 nC @ 10 V
1000 pF @ 50 V
±20V
-
2.5W (Ta), 43W (Tc)
16.9mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
SISA66DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3014 pF @ 15 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
pacchetto: -
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MOSFET (Metal Oxide)
30 V
40A (Tc)
4.5V, 10V
2.2V @ 1mA
66 nC @ 10 V
3014 pF @ 15 V
+20V, -16V
-
52W (Tc)
2.3mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
UJ4C075033L8S
Qorvo

750V/33MO,SICFET,G4,TOLL

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SI4155DY-T1-GE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 13.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione9.453
MOSFET (Metal Oxide)
30 V
10.2A (Ta), 13.6A (Tc)
4.5V, 10V
2.5V @ 250µA
50 nC @ 10 V
1870 pF @ 15 V
±25V
-
2.5W (Ta), 4.5W (Tc)
15mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
LSIC1MO170E1000
Littelfuse Inc.

SICFET N-CH 1700V 5A TO247-3L

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
pacchetto: -
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SiCFET (Silicon Carbide)
1700 V
5A (Tc)
15V, 20V
4V @ 1mA
15 nC @ 20 V
200 pF @ 1000 V
+22V, -6V
-
54W (Tc)
1Ohm @ 2A, 20V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3