Pagina 1182 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  1.182/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPP80N06S3L-08
Infineon Technologies

MOSFET N-CH 55V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 55µA
  • Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6475pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione2.512
MOSFET (Metal Oxide)
55V
80A (Tc)
5V, 10V
2.2V @ 55µA
134nC @ 10V
6475pF @ 25V
±16V
-
105W (Tc)
7.9 mOhm @ 43A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
64-4059PBF
Infineon Technologies

MOSFET N-CH 40V 42A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.440
MOSFET (Metal Oxide)
40V
42A (Tc)
10V
4V @ 250µA
45nC @ 10V
1510pF @ 25V
±20V
-
90W (Tc)
9 mOhm @ 42A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRF630NS
Infineon Technologies

MOSFET N-CH 200V 9.3A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 82W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione12.936
MOSFET (Metal Oxide)
200V
9.3A (Tc)
10V
4V @ 250µA
35nC @ 10V
575pF @ 25V
±20V
-
82W (Tc)
300 mOhm @ 5.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
5LN01SP
ON Semiconductor

MOSFET N-CH 50V 0.1A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 3-SPA
  • Package / Case: SC-72
pacchetto: SC-72
Azione3.408
MOSFET (Metal Oxide)
50V
100mA (Ta)
1.5V, 4V
1.3V @ 100µA
1.57nC @ 10V
6.6pF @ 10V
±10V
-
250mW (Ta)
7.8 Ohm @ 50mA, 4V
150°C (TJ)
Through Hole
3-SPA
SC-72
hot FQP70N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 70A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 155W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione163.476
MOSFET (Metal Oxide)
80V
70A (Tc)
10V
4V @ 250µA
98nC @ 10V
2700pF @ 25V
±25V
-
155W (Tc)
17 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
HUFA76437S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 71A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 155W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 71A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.376
MOSFET (Metal Oxide)
60V
71A (Tc)
4.5V, 10V
3V @ 250µA
71nC @ 10V
2230pF @ 25V
±16V
-
155W (Tc)
14 mOhm @ 71A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF3N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 1.95A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 1.95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 980mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione5.984
MOSFET (Metal Oxide)
300V
1.95A (Tc)
10V
5V @ 250µA
7nC @ 10V
230pF @ 25V
±30V
-
20W (Tc)
2.2 Ohm @ 980mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
ZXM64N03XTC
Diodes Incorporated

MOSFET N-CH 30V 5A 8MSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-MSOP
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione7.328
MOSFET (Metal Oxide)
30V
5A (Ta)
4.5V, 10V
1V @ 250µA
27nC @ 10V
950pF @ 25V
±20V
-
1.1W (Ta)
45 mOhm @ 3.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-MSOP
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
hot IRFL110TR
Vishay Siliconix

MOSFET N-CH 100V 1.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione257.592
MOSFET (Metal Oxide)
100V
1.5A (Tc)
10V
4V @ 250µA
8.3nC @ 10V
180pF @ 25V
±20V
-
2W (Ta), 3.1W (Tc)
540 mOhm @ 900mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
APTM100DA18TG
Microsemi Corporation

MOSFET N-CH 1000V 43A SP4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 43A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP4
  • Package / Case: SP4
pacchetto: SP4
Azione4.752
MOSFET (Metal Oxide)
1000V
43A
10V
5V @ 5mA
372nC @ 10V
10400pF @ 25V
±30V
-
780W (Tc)
210 mOhm @ 21.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
IXFX62N25
IXYS

MOSFET N-CH 250V 62A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione4.944
MOSFET (Metal Oxide)
250V
62A (Tc)
10V
4V @ 4mA
240nC @ 10V
6600pF @ 25V
±20V
-
390W (Tc)
35 mOhm @ 31A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
hot IRFP4229PBF
Infineon Technologies

MOSFET N-CH 250V 44A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 26A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione5.840
MOSFET (Metal Oxide)
250V
44A (Tc)
10V
5V @ 250µA
110nC @ 10V
4560pF @ 25V
±30V
-
310W (Tc)
46 mOhm @ 26A, 10V
-40°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
SSM3K15ACT,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.1A CST3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3
  • Package / Case: SC-101, SOT-883
pacchetto: SC-101, SOT-883
Azione2.624
MOSFET (Metal Oxide)
30V
100mA (Ta)
2.5V, 4V
1.5V @ 100µA
-
13.5pF @ 3V
±20V
-
100mW (Ta)
3.6 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
CST3
SC-101, SOT-883
hot STB11NK50ZT4
STMicroelectronics

MOSFET N-CH 500V 10A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione114.468
MOSFET (Metal Oxide)
500V
10A (Tc)
10V
4.5V @ 100µA
68nC @ 10V
1390pF @ 25V
±30V
-
125W (Tc)
520 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF8N80CYDTU
Fairchild/ON Semiconductor

MOSFET N-CH 800V 8A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 59W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3 (Y-Forming)
  • Package / Case: TO-220-3 Full Pack, Formed Leads
pacchetto: TO-220-3 Full Pack, Formed Leads
Azione7.552
MOSFET (Metal Oxide)
800V
8A (Tc)
10V
5V @ 250µA
45nC @ 10V
2050pF @ 25V
±30V
-
59W (Tc)
1.55 Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3 (Y-Forming)
TO-220-3 Full Pack, Formed Leads
IPD70P04P409ATMA1
Infineon Technologies

MOSFET P-CH TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.376
MOSFET (Metal Oxide)
40V
73A (Tc)
10V
4V @ 120µA
70nC @ 10V
4810pF @ 25V
±20V
-
75W (Tc)
8.9 mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STH180N10F3-2
STMicroelectronics

MOSFET N-CH 100V 120A H2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6665pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 315W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
pacchetto: TO-263-3, D2Pak (2 Leads + Tab) Variant
Azione15.600
MOSFET (Metal Oxide)
100V
180A (Tc)
10V
4V @ 250µA
114.6nC @ 10V
6665pF @ 25V
±20V
-
315W (Tc)
4.5 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK
TO-263-3, D2Pak (2 Leads + Tab) Variant
AUIRFS4310Z
Infineon Technologies

MOSFET N-CH 100V 127A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione23.244
MOSFET (Metal Oxide)
100V
120A (Tc)
10V
4V @ 150µA
170nC @ 10V
6860pF @ 50V
±20V
-
250W (Tc)
6 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDMS7556S
Fairchild/ON Semiconductor

MOSFET N-CH 25V 35A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8965pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione55.980
MOSFET (Metal Oxide)
25V
35A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
133nC @ 10V
8965pF @ 13V
±20V
-
2.5W (Ta), 96W (Tc)
1.2 mOhm @ 35A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
hot CSD17510Q5A
Texas Instruments

MOSFET N-CH 30V 100A 8SON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON (5x6)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione2.846.316
MOSFET (Metal Oxide)
30V
20A (Ta), 100A (Tc)
4.5V, 10V
2.1V @ 250µA
8.3nC @ 4.5V
1250pF @ 15V
±20V
-
3W (Ta)
5.2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON (5x6)
8-PowerTDFN
hot SI1012R-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 500MA SC-75A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
pacchetto: SC-75A
Azione4.487.496
MOSFET (Metal Oxide)
20V
500mA (Ta)
1.8V, 4.5V
900mV @ 250µA
0.75nC @ 4.5V
-
±6V
-
150mW (Ta)
700 mOhm @ 600mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75A
SC-75A
UJ3C120150K3S
Qorvo

SICFET N-CH 1200V 18.4A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Cascode SiCJFET)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 5.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 166.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Azione1.503
SiCFET (Cascode SiCJFET)
1200 V
18.4A (Tc)
12V
5.5V @ 10mA
30 nC @ 15 V
738 pF @ 100 V
±25V
-
166.7W (Tc)
180mOhm @ 5A, 12V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
PJD1NA60_L2_00001
Panjit International Inc.

600 V N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 14Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
1A (Ta)
10V
4V @ 250µA
3.3 nC @ 10 V
95 pF @ 25 V
±30V
-
27W (Tc)
14Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SI2304DDS-T1-BE3
Vishay Siliconix

MOSFET N-CH 30V 3.3A/3.6A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione10.695
MOSFET (Metal Oxide)
30 V
3.3A (Ta), 3.6A (Tc)
4.5V, 10V
2.2V @ 250µA
6.7 nC @ 10 V
235 pF @ 15 V
±20V
-
1.1W (Ta), 1.7W (Tc)
60mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
FQB47P06TM-AM002
onsemi

MOSFET P-CH 60V 47A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
60 V
47A (Tc)
10V
4V @ 250µA
110 nC @ 10 V
3600 pF @ 25 V
±25V
-
3.75W (Ta), 160W (Tc)
26mOhm @ 23.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMP3125L-7-ML
MOSLEADER

P 30V 2.5A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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-
-
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-
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TPHR7904PB-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 150A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacchetto: -
Azione46.050
MOSFET (Metal Oxide)
40 V
150A (Ta)
6V, 10V
3V @ 1mA
85 nC @ 10 V
6650 pF @ 10 V
±20V
-
960mW (Ta), 170W (Tc)
0.79mOhm @ 75A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
IXFX120N60X3
IXYS

DISCRETE MOSFET 120A 600V X3 PLU

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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