Pagina 1166 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  1.166/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF7705GTRPBF
Infineon Technologies

MOSFET P-CH 30V 8A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione7.488
MOSFET (Metal Oxide)
30V
8A (Ta)
4.5V, 10V
2.5V @ 250µA
88nC @ 10V
2774pF @ 25V
±20V
-
1.5W (Ta)
18 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
hot SPI47N10L
Infineon Technologies

MOSFET N-CH 100V 47A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 175W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione9.888
MOSFET (Metal Oxide)
100V
47A (Tc)
4.5V, 10V
2V @ 2mA
135nC @ 10V
2500pF @ 25V
±20V
-
175W (Tc)
26 mOhm @ 33A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2Pak, TO-262AA
IRF6611TR1PBF
Infineon Technologies

MOSFET N-CH 30V 32A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 27A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
pacchetto: DirectFET? Isometric MX
Azione6.752
MOSFET (Metal Oxide)
30V
32A (Ta), 150A (Tc)
4.5V, 10V
2.25V @ 250µA
56nC @ 4.5V
4860pF @ 15V
±20V
-
3.9W (Ta), 89W (Tc)
2.6 mOhm @ 27A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
hot IRF3704L
Infineon Technologies

MOSFET N-CH 20V 77A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione18.960
MOSFET (Metal Oxide)
20V
77A (Tc)
4.5V, 10V
3V @ 250µA
19nC @ 4.5V
1996pF @ 10V
±20V
-
87W (Tc)
9 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
hot IRLU024N
Infineon Technologies

MOSFET N-CH 55V 17A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione219.108
MOSFET (Metal Oxide)
55V
17A (Tc)
4V, 10V
2V @ 250µA
15nC @ 5V
480pF @ 25V
±16V
-
45W (Tc)
65 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
2SK4198FS
ON Semiconductor

MOSFET N-CH 600V 4A TO-220F-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.34 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione3.200
MOSFET (Metal Oxide)
600V
4A (Tc)
10V
-
14.3nC @ 10V
360pF @ 30V
±30V
-
2W (Ta), 30W (Tc)
2.34 Ohm @ 2.5A, 10V
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot NP22N055SLE-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 22A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 11A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (MP-3ZK)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione158.064
MOSFET (Metal Oxide)
55V
22A (Ta)
4.5V, 10V
2.5V @ 250µA
23nC @ 5V
1100pF @ 25V
±20V
-
1.2W (Ta), 45W (Tc)
37 mOhm @ 11A, 10V
175°C (TJ)
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPak (2 Leads + Tab), SC-63
FQI2NA90TU
Fairchild/ON Semiconductor

MOSFET N-CH 900V 2.8A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 Ohm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione4.592
MOSFET (Metal Oxide)
900V
2.8A (Tc)
10V
5V @ 250µA
20nC @ 10V
680pF @ 25V
±30V
-
3.13W (Ta), 107W (Tc)
5.8 Ohm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
IRLS630A
Fairchild/ON Semiconductor

MOSFET N-CH 200V 6.5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.25A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione5.632
MOSFET (Metal Oxide)
200V
6.5A (Tc)
5V
2V @ 250µA
27nC @ 5V
755pF @ 25V
±20V
-
36W (Tc)
400 mOhm @ 3.25A, 5V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
IPP65R600E6XKSA1
Infineon Technologies

MOSFET N-CH 650V 7.3A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 210µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione3.584
MOSFET (Metal Oxide)
650V
7.3A (Tc)
10V
3.5V @ 210µA
23nC @ 10V
440pF @ 100V
±20V
-
63W (Tc)
600 mOhm @ 2.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
hot IRF7490PBF
Infineon Technologies

MOSFET N-CH 100V 5.4A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.008
MOSFET (Metal Oxide)
100V
5.4A (Ta)
10V
4V @ 250µA
56nC @ 10V
1720pF @ 25V
±20V
-
2.5W (Ta)
39 mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
NVMFS5C423NLT3G
ON Semiconductor

MOSFET N-CH 40V 126A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione2.544
MOSFET (Metal Oxide)
40V
31A (Ta), 150A (Tc)
4.5V, 10V
2V @ 250µA
50nC @ 10V
3100pF @ 20V
±20V
-
3.7W (Ta), 83W (Tc)
2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
SIR864DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
pacchetto: PowerPAK? SO-8
Azione3.424
MOSFET (Metal Oxide)
30V
40A (Tc)
4.5V, 10V
2.4V @ 250µA
65nC @ 10V
2460pF @ 15V
±20V
-
5W (Ta), 54W (Tc)
3.6 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
MCH3376-TL-E
ON Semiconductor

MOSFET P-CH 8A 20V MCPH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 241 mOhm @ 750mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCPH
  • Package / Case: 3-SMD, Flat Leads
pacchetto: 3-SMD, Flat Leads
Azione4.960
MOSFET (Metal Oxide)
20V
1.5A (Ta)
1.8V, 4.5V
1.4V @ 1mA
1.7nC @ 4.5V
120pF @ 10V
±10V
-
800mW (Ta)
241 mOhm @ 750mA, 4.5V
150°C (TJ)
Surface Mount
3-MCPH
3-SMD, Flat Leads
TSM900N06CH X0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Stub Leads, IPak
pacchetto: TO-251-3 Stub Leads, IPak
Azione7.824
MOSFET (Metal Oxide)
60V
11A (Tc)
4.5V, 10V
2.5V @ 250µA
9.3nC @ 10V
500pF @ 15V
±20V
-
25W (Tc)
90 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Stub Leads, IPak
NVTFS5C466NLTAG
ON Semiconductor

MOSFET N-CH 40V 51A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione3.856
MOSFET (Metal Oxide)
40V
51A (Tc)
4.5V, 10V
2.2V @ 250µA
7nC @ 4.5V
880pF @ 25V
±20V
-
38W (Tc)
7.3 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
IXTP4N65X2
IXYS

MOSFET N-CH 650V 4A X2 TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.336
MOSFET (Metal Oxide)
650V
4A (Tc)
10V
5V @ 250µA
8.3nC @ 10V
455pF @ 25V
±30V
-
80W (Tc)
850 mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
R6015KNJTL
Rohm Semiconductor

NCH 600V 15A POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 184W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione12.744
MOSFET (Metal Oxide)
600V
15A (Tc)
10V
5V @ 1mA
37.5nC @ 10V
1050pF @ 25V
±20V
-
184W (Tc)
290 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
C3M0016120D
Wolfspeed, Inc.

SICFET N-CH 1200V 115A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 23mA
  • Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
  • Vgs (Max): +15V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 556W (Tc)
  • Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Azione4.692
SiCFET (Silicon Carbide)
1200 V
115A (Tc)
15V
3.6V @ 23mA
207 nC @ 15 V
6085 pF @ 1000 V
+15V, -4V
-
556W (Tc)
22.3mOhm @ 75A, 15V
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IPD65R420CFDATMA2
Infineon Technologies

MOSFET N-CH 650V 8.7A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-341
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione7.470
MOSFET (Metal Oxide)
650 V
8.7A (Tc)
10V
4.5V @ 300µA
31.5 nC @ 10 V
870 pF @ 100 V
±20V
-
83.3W (Tc)
420mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3-341
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB65R230CFD7AATMA1
Infineon Technologies

AUTOMOTIVE_COOLMOS PG-TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione2.565
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
4.5V @ 260µA
23 nC @ 10 V
1044 pF @ 400 V
±20V
-
63W (Tc)
230mOhm @ 5.2A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IQD020N10NM5CGATMA1
Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 159µA
  • Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TTFN-9-U02
  • Package / Case: 9-PowerTDFN
pacchetto: -
Azione15.000
MOSFET (Metal Oxide)
100 V
26A (Ta), 273A (Tc)
6V, 10V
3.8V @ 159µA
134 nC @ 10 V
9500 pF @ 50 V
±20V
-
3W (Ta), 333W (Tc)
2.05mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TTFN-9-U02
9-PowerTDFN
PJMD390N65EC_L2_00001
Panjit International Inc.

650V SUPER JUNCTION MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 87.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione17.820
MOSFET (Metal Oxide)
650 V
10A (Tc)
10V
4V @ 250µA
19 nC @ 10 V
726 pF @ 400 V
±30V
-
87.5W (Tc)
390mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
STD80N6F7
STMicroelectronics

MOSFET N-CH 60V 40A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
60 V
40A (Tc)
10V
4V @ 250µA
25 nC @ 10 V
1600 pF @ 30 V
±20V
-
100W (Tc)
8mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SI2312CDS-T1-BE3
Vishay Siliconix

N-CHANNEL 20-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
20 V
5A (Ta), 6A (Tc)
1.8V, 4.5V
1V @ 250µA
18 nC @ 5 V
865 pF @ 10 V
±8V
-
1.25W (Ta), 2.1W (Tc)
31.8mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
AS1M025120P
ANBON SEMICONDUCTOR (INT'L) LIMITED

N-CHANNEL SILICON CARBIDE POWER

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 463W (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Azione372
SiCFET (Silicon Carbide)
1200 V
90A (Tc)
20V
4V @ 15mA
195 nC @ 20 V
3600 pF @ 1000 V
+25V, -10V
-
463W (Tc)
34mOhm @ 50A, 20V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
BUK9Y12-55B-C3X
Nexperia USA Inc.

MOSFET N-CH 55V LFPAK56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 106W (Ta)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
55 V
61.8A (Ta)
5V, 10V
2.15V @ 1mA
32 nC @ 5 V
2880 pF @ 25 V
±15V
-
106W (Ta)
11mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
DMTH10H015LPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
11A (Ta), 44A (Tc)
4.5V, 10V
3V @ 250µA
33.3 nC @ 10 V
1871 pF @ 50 V
±20V
-
2.8W (Ta), 46W (Tc)
16mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN