Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 6.5A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.032 |
|
MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | ±20V | Schottky Diode (Isolated) | 2W (Ta) | 29 mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
IXYS |
MOSFET N-CH
|
pacchetto: - |
Azione4.416 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 60V 6A CPH6
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione7.280 |
|
MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4V, 10V | 2.6V @ 1mA | 20nC @ 10V | 1040pF @ 20V | ±20V | - | 1.6W (Ta) | 43 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
||
Vishay Siliconix |
MOSFET N-CH 20V 12A PPAK CHIPFET
|
pacchetto: 8-PowerVDFN |
Azione2.761.800 |
|
MOSFET (Metal Oxide) | 20V | 12A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 54nC @ 8V | 2100pF @ 10V | ±8V | - | 3.1W (Ta), 31W (Tc) | 15 mOhm @ 7.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerPak? ChipFet (3x1.9) | 8-PowerVDFN |
||
Vishay Siliconix |
MOSFET P-CH 8V 5.2A 1206-8
|
pacchetto: 8-SMD, Flat Lead |
Azione410.016 |
|
MOSFET (Metal Oxide) | 8V | 5.2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 21nC @ 4.5V | - | ±8V | - | 1.3W (Ta) | 33 mOhm @ 5.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
||
ON Semiconductor |
MOSFET N-CH 25V 2.5A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.664 |
|
MOSFET (Metal Oxide) | 25V | 2.5A (Ta) | 4.5V, 10V | 2V @ 250µA | 1.8nC @ 5V | 115pF @ 20V | ±20V | - | 1.04W (Ta), 20.8W (Tc) | 95 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 250V 8.1A TO-220-5
|
pacchetto: TO-220-5 |
Azione9.924 |
|
MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 770pF @ 25V | ±20V | Current Sensing | 74W (Tc) | 450 mOhm @ 4.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Infineon Technologies |
MOSFET N-CH 30V 43A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione970.428 |
|
MOSFET (Metal Oxide) | 30V | 43A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 780pF @ 15V | ±20V | - | 40W (Tc) | 13.8 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET P-CH 12V 20A TCPT3
|
pacchetto: 3-SMD, Flat Leads |
Azione3.232 |
|
MOSFET (Metal Oxide) | 12V | 20A (Ta) | - | - | - | - | ±10V | - | 20W (Tc) | - | 150°C (TJ) | Surface Mount | TCPT3 | 3-SMD, Flat Leads |
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Sanken |
MOSFET N-CH 60V 47A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.424 |
|
MOSFET (Metal Oxide) | 60V | 47A (Tc) | 4.5V, 10V | 2.5V @ 650µA | 38.6nC @ 10V | 2520pF @ 25V | ±20V | - | 47W (Tc) | 9.1 mOhm @ 23.6A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 40V 12.7A DIRECTFET
|
pacchetto: DirectFET? Isometric ST |
Azione7.536 |
|
MOSFET (Metal Oxide) | 40V | 12.7A (Ta), 55A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 29nC @ 4.5V | 2560pF @ 20V | ±20V | - | 2.1W (Ta), 42W (Tc) | 8.3 mOhm @ 12.7A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? ST | DirectFET? Isometric ST |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 55A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione16.866 |
|
MOSFET (Metal Oxide) | 100V | 55A (Ta) | 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | ±20V | - | 157W (Tc) | 6.5 mOhm @ 27.5A, 10V | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 650V 76A
|
pacchetto: TO-247-4 |
Azione10.668 |
|
MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 5V @ 7.6mA | 298nC @ 10V | 12560pF @ 100V | ±20V | - | 595W (Tc) | 41 mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 7.4A POWER56-8
|
pacchetto: 8-PowerWDFN |
Azione308.688 |
|
MOSFET (Metal Oxide) | 100V | 7.4A (Ta), 22A (Tc) | 6V, 10V | 4V @ 250µA | 44nC @ 10V | 2680pF @ 50V | ±20V | - | 2.5W (Ta), 78W (Tc) | 23 mOhm @ 7.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerWDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 80V 20A 8DFN
|
pacchetto: 8-PowerWDFN |
Azione360.000 |
|
MOSFET (Metal Oxide) | 80V | 20A (Ta), 50A (Tc) | 6V, 10V | 3.4V @ 250µA | 38nC @ 10V | 1871pF @ 40V | ±20V | - | 6.3W (Ta), 83W (Tc) | 8.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 240MA SOT323-3
|
pacchetto: SC-70, SOT-323 |
Azione772.140 |
|
MOSFET (Metal Oxide) | 60V | 240mA (Ta) | 3V, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | - | ±20V | - | 280mW (Ta) | 2.5 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
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MOSLEADER |
N 20V 8.6A SOT23
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
TRANSISTOR
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET N-CH 30V 500MA SOT23 T&R
|
pacchetto: - |
Azione12.171 |
|
MOSFET (Metal Oxide) | 30 V | 500mA (Ta) | 2.5V, 4V | 1.6V @ 250µA | 1.2 nC @ 10 V | 50 pF @ 15 V | ±20V | - | 350mW (Ta) | 1.5Ohm @ 10mA, 4V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Taiwan Semiconductor Corporation |
60V, 11A, SINGLE N-CHANNEL POWER
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 11A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 9.3 nC @ 10 V | 500 pF @ 15 V | ±20V | - | 25W (Tc) | 90mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-251S (IPAK SL) | TO-251-3 Stub Leads, IPAK |
||
Infineon Technologies |
MOSFET N-CH 600V 3A TO252-3
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 3A (Tc) | 10V | 4.5V @ 30µA | 3.8 nC @ 10 V | 134 pF @ 400 V | ±20V | - | 20W (Tc) | 2Ohm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-344 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Goford Semiconductor |
N100V,RD(MAX)<250M@10V,VTH1.2V~2
|
pacchetto: - |
Azione8.922 |
|
MOSFET (Metal Oxide) | 100 V | 2A (Tc) | 4.5V, 10V | 2V @ 250µA | 10 nC @ 10 V | 413 pF @ 50 V | ±20V | - | 1.3W (Tc) | 250mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
MOSFET N-CH 80V 25A DPAK
|
pacchetto: - |
Azione55.101 |
|
MOSFET (Metal Oxide) | 80 V | 25A (Tc) | 10V | 4V @ 250µA | 21 nC @ 10 V | 866 pF @ 40 V | ±20V | - | 48.4W (Tj) | 21mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 50A D2PAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 18 nC @ 10 V | 1900 pF @ 15 V | ±20V | - | 47W (Tc) | 8mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 80V 37A/331A HSOF-8
|
pacchetto: - |
Azione6.627 |
|
MOSFET (Metal Oxide) | 80 V | 37A (Ta), 331A (Tc) | 6V, 10V | 3.8V @ 280µA | 200 nC @ 10 V | 14000 pF @ 40 V | ±20V | - | 300W (Tc) | 1.4mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
||
Infineon Technologies |
MOSFET_)40V 60V) PG-TSDSON-8
|
pacchetto: - |
Azione15.000 |
|
MOSFET (Metal Oxide) | 60 V | 40A (Tj) | 7V, 10V | 3.4V @ 13µA | 16.3 nC @ 10 V | 1099 pF @ 30 V | ±20V | - | 42W (Tc) | 10.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-32 | 8-PowerTDFN |
||
onsemi |
SIC MOS TO247-3L 70MOHM 1200V M3
|
pacchetto: - |
Azione696 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 34A (Tc) | 18V | 4.4V @ 7mA | 57 nC @ 18 V | 1230 pF @ 800 V | +22V, -10V | - | 160W (Tc) | 87mOhm @ 15A, 18V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
onsemi |
MOSFET N-CH 100V 29.6A/116A 8DFN
|
pacchetto: - |
Azione7.740 |
|
MOSFET (Metal Oxide) | 100 V | 29.6A (Ta), 116A (Tc) | - | 4V @ 250µA | 42 nC @ 10 V | 2856 pF @ 50 V | ±20V | - | 7.9W (Ta), 122W (Tc) | 4.3mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFN (5x6.15) | 8-PowerVDFN |