Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 80V 70A TO263-3
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione390.000 |
|
MOSFET (Metal Oxide) | 80V | 70A (Tc) | 6V, 10V | 3.5V @ 46µA | 35nC @ 10V | 2410pF @ 40V | ±20V | - | 100W (Tc) | 9.7 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 100V 13A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.264 |
|
MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | ±20V | - | 66W (Tc) | 205 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
NXP |
MOSFET N-CH 30V 1.9A SOT-23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione4.128 |
|
MOSFET (Metal Oxide) | 30V | 1.9A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 4nC @ 10V | 132pF @ 15V | ±20V | - | 310mW (Ta), 2.09W (Tc) | 84 mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
ON Semiconductor |
MOSFET N-CH 30V 171A SO-8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione3.856 |
|
MOSFET (Metal Oxide) | 30V | 17A (Ta), 171A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 40.2nC @ 4.5V | 5660pF @ 15V | ±20V | - | 950mW (Ta), 96.2W (Tc) | 2 mOhm @ 22A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Panasonic Electronic Components |
MOSFET N-CH 30V 1A MINI-PWR
|
pacchetto: TO-243AA |
Azione2.064 |
|
MOSFET (Metal Oxide) | 30V | 1A (Ta) | 4V, 10V | 2V @ 1mA | - | 87pF @ 10V | ±20V | - | 1W (Ta) | 600 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | MiniP3-F1 | TO-243AA |
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STMicroelectronics |
MOSFET N-CH 600V 10A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione6.160 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 850pF @ 50V | ±25V | - | 90W (Tc) | 450 mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
STMicroelectronics |
MOSFET N-CH 200V 1A SOT223
|
pacchetto: TO-261-4, TO-261AA |
Azione734.496 |
|
MOSFET (Metal Oxide) | 200V | 1A (Tc) | 10V | 5V @ 250µA | 15.7nC @ 10V | 206pF @ 25V | ±20V | - | 2.9W (Tc) | 1.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.704 |
|
MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | ±20V | - | 92W (Tc) | 26.5 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 800V 50A PLUS264
|
pacchetto: TO-264-3, TO-264AA |
Azione2.560 |
|
MOSFET (Metal Oxide) | 800V | 50A (Tc) | 10V | 5.5V @ 8mA | 260nC @ 10V | 7200pF @ 25V | ±30V | - | 1135W (Tc) | 160 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS264? | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 1000V 700MA TO-220
|
pacchetto: TO-220-3 |
Azione10.008 |
|
MOSFET (Metal Oxide) | 1000V | 700mA (Tc) | 10V | 4.5V @ 25µA | 7.8nC @ 10V | 260pF @ 25V | ±30V | - | 25W (Tc) | 17 Ohm @ 375mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 30V 6.9A SO-8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione25.980 |
|
MOSFET (Metal Oxide) | 30V | 6.9A (Ta), 30A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 13nC @ 11.5V | 795pF @ 15V | ±20V | - | 860mW (Ta), 32.5W (Tc) | 10.6 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Diodes Incorporated |
MOSFET BVDSS: 41V 60V U-DFN2020-
|
pacchetto: 6-UDFN Exposed Pad |
Azione2.160 |
|
MOSFET (Metal Oxide) | 60V | 4.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 17.2nC @ 10V | 969pF @ 30V | ±20V | - | 1.97W (Ta) | 110 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 49A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.168 |
|
MOSFET (Metal Oxide) | 100V | 49A (Tc) | 5V, 10V | 2V @ 1mA | - | 4293pF @ 25V | ±10V | - | 166W (Tc) | 27 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 75A TO220AB
|
pacchetto: TO-220-5 |
Azione16.596 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 2V @ 1mA | - | 5836pF @ 25V | ±15V | Temperature Sensing Diode | 272W (Tc) | 6.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
Rohm Semiconductor |
NCH 600V 30A POWER MOSFET
|
pacchetto: TO-247-3 |
Azione7.524 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 5V @ 1mA | 56nC @ 10V | 2350pF @ 25V | ±20V | - | 305W (Tc) | 130 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 525V 6A TO-220FP
|
pacchetto: TO-220-3 Full Pack |
Azione60.000 |
|
MOSFET (Metal Oxide) | 525V | 6A (Tc) | 10V | 4.5V @ 50µA | 33nC @ 10V | 870pF @ 50V | ±30V | - | 25W (Tc) | 1.15 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
MOSFET N-CH 100V LFPAK56
|
pacchetto: SC-100, SOT-669 |
Azione4.720 |
|
MOSFET (Metal Oxide) | 100V | 49A (Tc) | 5V, 10V | 2.1V @ 1mA | 65.6nC @ 10V | 4640pF @ 25V | ±20V | - | 147W (Tc) | 21.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Rohm Semiconductor |
MOSFET P-CH 45V 7A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione289.488 |
|
MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | - | 47.6nC @ 5V | 4100pF @ 10V | ±20V | - | 2W (Ta) | 27 mOhm @ 7A, 10V | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET P-CH 55V 18A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.656 |
|
MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | ±20V | - | 57W (Tc) | 110 mOhm @ 9.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 100A TO3P(L)
|
pacchetto: TO-3PL |
Azione7.476 |
|
MOSFET (Metal Oxide) | 600V | 100A (Ta) | 10V | 3.7V @ 5mA | 360nC @ 10V | 15000pF @ 30V | ±30V | Super Junction | 797W (Tc) | 18 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-3P(L) | TO-3PL |
||
Vishay Siliconix |
MOSFET N-CH 250V 38A TO-247AC
|
pacchetto: TO-247-3 |
Azione17.436 |
|
MOSFET (Metal Oxide) | 250V | 38A (Tc) | 10V | 4V @ 250µA | 210nC @ 10V | 5400pF @ 25V | ±20V | - | 280W (Tc) | 75 mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 49A TO-220AB
|
pacchetto: TO-220-3 |
Azione14.928 |
|
MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1470pF @ 25V | ±20V | - | 94W (Tc) | 17.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET P-CH 40V 6.4A SOT223
|
pacchetto: TO-261-4, TO-261AA |
Azione834.912 |
|
MOSFET (Metal Oxide) | 40V | 4.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 26.1nC @ 10V | 1007pF @ 20V | ±20V | - | 2W (Ta) | 60 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
IXYS |
MOSFET N-CH 48A PLUS247-3
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 950V 6A TO252-3
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 3.5V @ 140µA | 15 nC @ 10 V | 478 pF @ 400 V | ±20V | - | 52W (Tc) | 1.2Ohm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
MV8 40V P-CH LL IN S08FL PACKAGE
|
pacchetto: - |
Azione4.302 |
|
MOSFET (Metal Oxide) | 40 V | 9.4A (Ta), 34.6A (Tc) | 4.5V, 10V | 2.4V @ 255µA | 16.3 nC @ 10 V | 1058 pF @ 20 V | ±20V | - | 3.5W (Ta), 44.1W (Tc) | 23mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
STMicroelectronics |
MOSFET N-CH 650V 32A TO220
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 5V @ 250µA | 56.3 nC @ 10 V | 2540 pF @ 100 V | ±25V | - | 250W (Tc) | 110mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Renesas Electronics Corporation |
TRANSISTOR
|
pacchetto: - |
Request a Quote |
|
- | - | 55A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |