Pagina 39 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Frequency	Gain	Voltage - Test	Current Rating	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
MAGX-000035-010000	M/A-Com Technology Solutions	TRANSISTOR GAN 10WCW 0.03-3.5GHZ Transistor Type: HEMT Frequency: 30MHz ~ 3.5GHz Gain: 17.5dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 490mA Power - Output: 40dBm Voltage - Rated: 65V Package / Case: - Supplier Device Package: -	pacchetto: -	Azione4.560	30MHz ~ 3.5GHz	17.5dB	50V	-	-	490mA	40dBm	65V	-	-
MRFE6VP6300HSR3	NXP	FET RF 2CH 130V 230MHZ NI780S-4 Transistor Type: LDMOS (Dual) Frequency: 230MHz Gain: 26.5dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 100mA Power - Output: 300W Voltage - Rated: 130V Package / Case: NI-780S-4 Supplier Device Package: NI-780S-4	pacchetto: NI-780S-4	Azione7.744	230MHz	26.5dB	50V	-	-	100mA	300W	130V	NI-780S-4	NI-780S-4
MRF8S26120HR3	NXP	FET RF 65V 2.69GHZ NI780 Transistor Type: LDMOS Frequency: 2.69GHz Gain: 15.6dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 900mA Power - Output: 28W Voltage - Rated: 65V Package / Case: NI-780 Supplier Device Package: NI-780	pacchetto: NI-780	Azione6.720	2.69GHz	15.6dB	28V	-	-	900mA	28W	65V	NI-780	NI-780
ON5238,118	NXP	MOSFET RF SOT426 D2PAK Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB Supplier Device Package: SOT-426	pacchetto: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	Azione2.272	-	-	-	-	-	-	-	-	TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	SOT-426
MRF7S18125AHR5	NXP	FET RF 65V 1.88GHZ NI780 Transistor Type: LDMOS Frequency: 1.88GHz Gain: 17dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.1A Power - Output: 125W Voltage - Rated: 65V Package / Case: NI-780 Supplier Device Package: NI-780	pacchetto: NI-780	Azione2.656	1.88GHz	17dB	28V	-	-	1.1A	125W	65V	NI-780	NI-780
MRFE6S9200HSR3	NXP	FET RF 66V 880MHZ NI-880S Transistor Type: LDMOS Frequency: 880MHz Gain: 21dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.4A Power - Output: 58W Voltage - Rated: 66V Package / Case: NI-880S Supplier Device Package: NI-880S	pacchetto: NI-880S	Azione5.264	880MHz	21dB	28V	-	-	1.4A	58W	66V	NI-880S	NI-880S
MRF18090AR3	NXP	FET RF 65V 1.81GHZ NI-880 Transistor Type: LDMOS Frequency: 1.81GHz Gain: 13.5dB Voltage - Test: 26V Current Rating: - Noise Figure: - Current - Test: 750mA Power - Output: 90W Voltage - Rated: 65V Package / Case: NI-880 Supplier Device Package: NI-880	pacchetto: NI-880	Azione9.216	1.81GHz	13.5dB	26V	-	-	750mA	90W	65V	NI-880	NI-880
BF256AG	ON Semiconductor	JFET N-CH 30V 7MA TO92 Transistor Type: N-Channel JFET Frequency: 800MHz Gain: 11dB Voltage - Test: - Current Rating: 7mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 30V Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione3.664	800MHz	11dB	-	7mA	-	-	-	30V	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
MRF5S9080NR1	NXP	FET RF 65V 960MHZ TO-270-4 Transistor Type: LDMOS Frequency: 960MHz Gain: 18.5dB Voltage - Test: 26V Current Rating: - Noise Figure: - Current - Test: 600mA Power - Output: 80W Voltage - Rated: 65V Package / Case: TO-270AB Supplier Device Package: TO-270 WB-4	pacchetto: TO-270AB	Azione9.168	960MHz	18.5dB	26V	-	-	600mA	80W	65V	TO-270AB	TO-270 WB-4
NE55410GR-T3-AZ	CEL	FET RF 65V 2.14GHZ 16-HTSSOP Transistor Type: LDMOS Frequency: 2.14GHz Gain: 13.5dB Voltage - Test: 28V Current Rating: 250mA, 1A Noise Figure: - Current - Test: 20mA Power - Output: 35.4dBm Voltage - Rated: 65V Package / Case: 16-DFF, Exposed Pad Supplier Device Package: 16-HTSSOP	pacchetto: 16-DFF, Exposed Pad	Azione4.912	2.14GHz	13.5dB	28V	250mA, 1A	-	20mA	35.4dBm	65V	16-DFF, Exposed Pad	16-HTSSOP
BLF4G20S-110B,112	NXP	FET RF 65V 1.99GHZ SOT502B Transistor Type: LDMOS Frequency: 1.93GHz ~ 1.99GHz Gain: 13.5dB Voltage - Test: 28V Current Rating: 12A Noise Figure: - Current - Test: 700mA Power - Output: 100W Voltage - Rated: 65V Package / Case: SOT-502B Supplier Device Package: SOT502B	pacchetto: SOT-502B	Azione2.768	1.93GHz ~ 1.99GHz	13.5dB	28V	12A	-	700mA	100W	65V	SOT-502B	SOT502B
MRF6V13250HR5	NXP	FET RF 120V 1.3GHZ NI780 Transistor Type: LDMOS Frequency: 1.3GHz Gain: 22.7dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 100mA Power - Output: 250W Voltage - Rated: 120V Package / Case: NI-780 Supplier Device Package: NI-780	pacchetto: NI-780	Azione2.240	1.3GHz	22.7dB	50V	-	-	100mA	250W	120V	NI-780	NI-780
VRF2944MP	Microsemi Corporation	MOSFET RF N-CH 170V 50A M177 Transistor Type: N-Channel Frequency: 30MHz Gain: 25dB Voltage - Test: 50V Current Rating: 50A Noise Figure: - Current - Test: 250mA Power - Output: 400W Voltage - Rated: 170V Package / Case: M177 Supplier Device Package: M177	pacchetto: M177	Azione4.048	30MHz	25dB	50V	50A	-	250mA	400W	170V	M177	M177
BLF2425M6L180P,118	Ampleon USA Inc.	RF FET LDMOS 65V 13.3DB SOT539A Transistor Type: LDMOS (Dual), Common Source Frequency: 2.45GHz Gain: 13.3dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 10mA Power - Output: 180W Voltage - Rated: 65V Package / Case: SOT539A Supplier Device Package: SOT539A	pacchetto: SOT539A	Azione3.008	2.45GHz	13.3dB	28V	-	-	10mA	180W	65V	SOT539A	SOT539A
BLF8G24LS-150GVQ	Ampleon USA Inc.	RF FET LDMOS 65V 19DB SOT1244C Transistor Type: LDMOS Frequency: 2.3GHz ~ 2.4GHz Gain: 19dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.3A Power - Output: 45W Voltage - Rated: 65V Package / Case: SOT-1244C Supplier Device Package: CDFM6	pacchetto: SOT-1244C	Azione5.120	2.3GHz ~ 2.4GHz	19dB	28V	-	-	1.3A	45W	65V	SOT-1244C	CDFM6
MMRF2005NR1	NXP	FET RF 65V 940MHZ Transistor Type: LDMOS Frequency: 940MHz Gain: 35.9dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 106mA Power - Output: 3.2W Voltage - Rated: 65V Package / Case: TO-270-16 Variant, Flat Leads Supplier Device Package: TO-270 WBL-16	pacchetto: TO-270-16 Variant, Flat Leads	Azione4.208	940MHz	35.9dB	28V	-	-	106mA	3.2W	65V	TO-270-16 Variant, Flat Leads	TO-270 WBL-16
CGHV1F025S	Cree/Wolfspeed	FET RF 100V 6GHZ 12DFN Transistor Type: HEMT Frequency: 6GHz Gain: 16dB Voltage - Test: 40V Current Rating: 2A Noise Figure: - Current - Test: 150mA Power - Output: 29W Voltage - Rated: 100V Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x3)	pacchetto: 12-VFDFN Exposed Pad	Azione7.312	6GHz	16dB	40V	2A	-	150mA	29W	100V	12-VFDFN Exposed Pad	12-DFN (4x3)
PD84008L-E	STMicroelectronics	FET RF 25V 870MHZ Transistor Type: LDMOS Frequency: 870MHz Gain: 15.5dB Voltage - Test: 7.5V Current Rating: 7A Noise Figure: - Current - Test: 250mA Power - Output: 2W Voltage - Rated: 25V Package / Case: 8-PowerVDFN Supplier Device Package: PowerFLAT? (5x5)	pacchetto: 8-PowerVDFN	Azione3.632	870MHz	15.5dB	7.5V	7A	-	250mA	2W	25V	8-PowerVDFN	PowerFLAT? (5x5)
BLC9G20XS-160AVZ	Ampleon USA Inc.	RF FET LDMOS 65V 16.6DB SOT12753 Transistor Type: LDMOS (Dual), Common Source Frequency: 1.81GHz ~ 1.88GHz Gain: 16.6dB Voltage - Test: 30V Current Rating: - Noise Figure: - Current - Test: 300mA Power - Output: 200W Voltage - Rated: 65V Package / Case: SOT1275-3 Supplier Device Package: -	pacchetto: SOT1275-3	Azione6.708	1.81GHz ~ 1.88GHz	16.6dB	30V	-	-	300mA	200W	65V	SOT1275-3	-
BLA6G1011-200R,112	Ampleon USA Inc.	RF FET LDMOS 65V 20DB SOT502A Transistor Type: LDMOS Frequency: 1.03GHz ~ 1.09GHz Gain: 20dB Voltage - Test: 28V Current Rating: 49A Noise Figure: - Current - Test: 100mA Power - Output: 200W Voltage - Rated: 65V Package / Case: SOT-502A Supplier Device Package: LDMOST	pacchetto: SOT-502A	Azione7.824	1.03GHz ~ 1.09GHz	20dB	28V	49A	-	100mA	200W	65V	SOT-502A	LDMOST
UPA571T-T1-A	Renesas Electronics Corporation	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
IGN2729M400R2	Integra Technologies Inc.	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione30	-	-	-	-	-	-	-	-	-	-
DE150-102N02A	IXYS-RF	RF MOSFET DE150 Transistor Type: MOSFET (Metal Oxide) Frequency: - Gain: - Voltage - Test: - Current Rating: 2A Noise Figure: - Current - Test: - Power - Output: 200W Voltage - Rated: 1000 V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: DE150	pacchetto: -	Request a Quote	-	-	-	2A	-	-	200W	1000 V	6-SMD, Flat Lead Exposed Pad	DE150
BLF879PSIN	Ampleon USA Inc.	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
PTVA093002ND-V1-R5	MACOM Technology Solutions	RF MOSFET LDMOS HB1SOF-4 Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
WP28007025	WAVEPIA.,Co.Ltd	RF MOSFET GAN HEMT 28V DIE Transistor Type: GaN HEMT Frequency: 7GHz Gain: 17dB Voltage - Test: 28 V Current Rating: 800mA Noise Figure: - Current - Test: 100 mA Power - Output: 25W Voltage - Rated: 28 V Package / Case: Die Supplier Device Package: Die	pacchetto: -	Azione195	7GHz	17dB	28 V	800mA	-	100 mA	25W	28 V	Die	Die
A3G26D055N-100	NXP	RF MOSFET GAN 48V 6DFN Transistor Type: GaN Frequency: 100MHz ~ 2.69GHz Gain: 13.9dB Voltage - Test: 48 V Current Rating: - Noise Figure: - Current - Test: 40 mA Power - Output: 8W Voltage - Rated: 125 V Package / Case: 6-LDFN Exposed Pad Supplier Device Package: 6-PDFN (7x6.5)	pacchetto: -	Azione3	100MHz ~ 2.69GHz	13.9dB	48 V	-	-	40 mA	8W	125 V	6-LDFN Exposed Pad	6-PDFN (7x6.5)
A3T21H360W23SR6	NXP	RF MOSFET LDMOS 28V ACP1230S-4 Transistor Type: LDMOS Frequency: 2.11GHz ~ 2.2GHz Gain: 16.4dB Voltage - Test: 28 V Current Rating: 10µA Noise Figure: - Current - Test: 600 mA Power - Output: 328W Voltage - Rated: 65 V Package / Case: ACP-1230S-4L2S Supplier Device Package: ACP-1230S-4L2S	pacchetto: -	Request a Quote	2.11GHz ~ 2.2GHz	16.4dB	28 V	10µA	-	600 mA	328W	65 V	ACP-1230S-4L2S	ACP-1230S-4L2S