Pagina 31 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Frequency	Gain	Voltage - Test	Current Rating	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
MRF8S23120HR3	NXP	FET RF 65V 2.3GHZ NI-780 Transistor Type: LDMOS Frequency: 2.3GHz Gain: 16dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 800mA Power - Output: 28W Voltage - Rated: 65V Package / Case: NI-780 Supplier Device Package: NI-780	pacchetto: NI-780	Azione6.288	2.3GHz	16dB	28V	-	-	800mA	28W	65V	NI-780	NI-780
BLF6G27LS-100,112	Ampleon USA Inc.	RF FET LDMOS 65V SOT502A Transistor Type: LDMOS Frequency: - Gain: - Voltage - Test: 28V Current Rating: 29A Noise Figure: - Current - Test: 900mA Power - Output: 14W Voltage - Rated: 65V Package / Case: SOT-502A Supplier Device Package: LDMOST	pacchetto: SOT-502A	Azione7.696	-	-	28V	29A	-	900mA	14W	65V	SOT-502A	LDMOST
ON5258,215	Nexperia USA Inc.	MOSFET RF SOT23 TO-236AB Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione7.760	-	-	-	-	-	-	-	-	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
MRF7S38040HR3	NXP	FET RF 65V 3.6GHZ NI-400 Transistor Type: LDMOS Frequency: 3.4GHz ~ 3.6GHz Gain: 14dB Voltage - Test: 30V Current Rating: - Noise Figure: - Current - Test: 450mA Power - Output: 8W Voltage - Rated: 65V Package / Case: NI-400-240 Supplier Device Package: NI-400-240	pacchetto: NI-400-240	Azione5.360	3.4GHz ~ 3.6GHz	14dB	30V	-	-	450mA	8W	65V	NI-400-240	NI-400-240
MRF7S16150HR5	NXP	FET RF 65V 1.66GHZ NI-780 Transistor Type: LDMOS Frequency: 1.6GHz ~ 1.66GHz Gain: 19.7dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.5A Power - Output: 32W Voltage - Rated: 65V Package / Case: NI-780 Supplier Device Package: NI-780	pacchetto: NI-780	Azione5.040	1.6GHz ~ 1.66GHz	19.7dB	28V	-	-	1.5A	32W	65V	NI-780	NI-780
MRF7S19170HSR5	NXP	FET RF 65V 1.99GHZ NI-880S Transistor Type: LDMOS Frequency: 1.99GHz Gain: 17.2dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.4A Power - Output: 50W Voltage - Rated: 65V Package / Case: NI-880S Supplier Device Package: NI-880S	pacchetto: NI-880S	Azione4.096	1.99GHz	17.2dB	28V	-	-	1.4A	50W	65V	NI-880S	NI-880S
J309	ON Semiconductor	JFET N-CH 25V 30MA TO92 Transistor Type: N-Channel JFET Frequency: 100MHz Gain: 16dB Voltage - Test: 10V Current Rating: 30mA Noise Figure: - Current - Test: 10mA Power - Output: - Voltage - Rated: 25V Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione3.552	100MHz	16dB	10V	30mA	-	10mA	-	25V	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BF245A	ON Semiconductor	JFET N-CH 30V 100MA TO92 Transistor Type: N-Channel JFET Frequency: - Gain: - Voltage - Test: - Current Rating: 100mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 30V Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione3.568	-	-	-	100mA	-	-	-	30V	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
MRF6S23100HR3	NXP	FET RF 68V 2.4GHZ NI-780 Transistor Type: LDMOS Frequency: 2.4GHz Gain: 15.4dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1A Power - Output: 20W Voltage - Rated: 68V Package / Case: NI-780 Supplier Device Package: NI-780	pacchetto: NI-780	Azione3.232	2.4GHz	15.4dB	28V	-	-	1A	20W	68V	NI-780	NI-780
MRF6P27160HR5	NXP	FET RF 68V 2.66GHZ NI-1230 Transistor Type: LDMOS Frequency: 2.66GHz Gain: 14.6dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.8A Power - Output: 35W Voltage - Rated: 68V Package / Case: NI-1230 Supplier Device Package: NI-1230	pacchetto: NI-1230	Azione2.400	2.66GHz	14.6dB	28V	-	-	1.8A	35W	68V	NI-1230	NI-1230
MRF5S9070NR5	NXP	FET RF 68V 880MHZ TO-270-2 Transistor Type: LDMOS Frequency: 880MHz Gain: 17.8dB Voltage - Test: 26V Current Rating: - Noise Figure: - Current - Test: 600mA Power - Output: 14W Voltage - Rated: 68V Package / Case: TO-270AA Supplier Device Package: TO-270-2	pacchetto: TO-270AA	Azione7.568	880MHz	17.8dB	26V	-	-	600mA	14W	68V	TO-270AA	TO-270-2
J304_D26Z	Fairchild/ON Semiconductor	JFET N-CH 30V 15MA TO92 Transistor Type: N-Channel JFET Frequency: - Gain: - Voltage - Test: - Current Rating: 15mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 30V Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione4.336	-	-	-	15mA	-	-	-	30V	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5951_D27Z	Fairchild/ON Semiconductor	JFET N-CH 30V 13MA TO92 Transistor Type: N-Channel JFET Frequency: 1kHz Gain: - Voltage - Test: 15V Current Rating: 13mA Noise Figure: 2dB Current - Test: - Power - Output: - Voltage - Rated: 30V Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione3.920	1kHz	-	15V	13mA	2dB	-	-	30V	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MRF5S9100NBR1	NXP	FET RF 68V 880MHZ TO-272-4 Transistor Type: LDMOS Frequency: 880MHz Gain: 19.5dB Voltage - Test: 26V Current Rating: - Noise Figure: - Current - Test: 950mA Power - Output: 20W Voltage - Rated: 68V Package / Case: TO-272BB Supplier Device Package: TO-272 WB-4	pacchetto: TO-272BB	Azione6.368	880MHz	19.5dB	26V	-	-	950mA	20W	68V	TO-272BB	TO-272 WB-4
BLF278,112	Ampleon USA Inc.	RF FET 2 NC 125V 22DB SOT262A1 Transistor Type: 2 N-Channel (Dual) Common Source Frequency: 108MHz Gain: 22dB Voltage - Test: 50V Current Rating: 18A Noise Figure: - Current - Test: 100mA Power - Output: 300W Voltage - Rated: 125V Package / Case: SOT-262A1 Supplier Device Package: CDFM4	pacchetto: SOT-262A1	Azione4.352	108MHz	22dB	50V	18A	-	100mA	300W	125V	SOT-262A1	CDFM4
MRF8P29300HR6	NXP	FET RF 2CH 65V 2.9GHZ NI1230 Transistor Type: LDMOS (Dual) Frequency: 2.9GHz Gain: 13.3dB Voltage - Test: 30V Current Rating: - Noise Figure: - Current - Test: 100mA Power - Output: 320W Voltage - Rated: 65V Package / Case: NI-1230 Supplier Device Package: NI-1230	pacchetto: NI-1230	Azione7.632	2.9GHz	13.3dB	30V	-	-	100mA	320W	65V	NI-1230	NI-1230
ARF1511	Microsemi Corporation	RF PWR MOSFET 500V 20A DIE Transistor Type: 4 N-Channel Frequency: 40.7MHz Gain: 15dB Voltage - Test: 380V Current Rating: 20A Noise Figure: - Current - Test: - Power - Output: 750W Voltage - Rated: 500V Package / Case: Die Supplier Device Package: Die	pacchetto: Die	Azione5.408	40.7MHz	15dB	380V	20A	-	-	750W	500V	Die	Die
BLF8G09LS-400PWU	Ampleon USA Inc.	RF FET LDMOS 65V 20.6DB SOT1242B Transistor Type: LDMOS (Dual), Common Source Frequency: 718.5MHz ~ 725.5MHz Gain: 20.6dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 3.4A Power - Output: 95W Voltage - Rated: 65V Package / Case: SOT-1242B Supplier Device Package: CDFM8	pacchetto: SOT-1242B	Azione7.216	718.5MHz ~ 725.5MHz	20.6dB	28V	-	-	3.4A	95W	65V	SOT-1242B	CDFM8
ARF466FL	Microsemi Corporation	RF PWR MOSFET 1000V 13A Transistor Type: N-Channel Frequency: 40.68MHz Gain: 16dB Voltage - Test: 150V Current Rating: 13A Noise Figure: - Current - Test: - Power - Output: 150W Voltage - Rated: 1000V Package / Case: - Supplier Device Package: T3	pacchetto: -	Azione2.144	40.68MHz	16dB	150V	13A	-	-	150W	1000V	-	T3
BLM8G0710S-15PBGY	Ampleon USA Inc.	RF FET LDMOS 65V 36.1DB SOT12122 Transistor Type: LDMOS (Dual) Frequency: 957.5MHz Gain: 36.1dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 15mA Power - Output: 1.5W Voltage - Rated: 65V Package / Case: SOT-1211-2 Supplier Device Package: 16-HSOP	pacchetto: SOT-1211-2	Azione2.864	957.5MHz	36.1dB	28V	-	-	15mA	1.5W	65V	SOT-1211-2	16-HSOP
MRF1550NT1	NXP	FET RF 40V 175MHZ TO272-6 WRAP Transistor Type: LDMOS Frequency: 175MHz Gain: 14.5dB Voltage - Test: 12.5V Current Rating: 12A Noise Figure: - Current - Test: 500mA Power - Output: 50W Voltage - Rated: 40V Package / Case: TO-272AA Supplier Device Package: TO-272-6	pacchetto: TO-272AA	Azione11.844	175MHz	14.5dB	12.5V	12A	-	500mA	50W	40V	TO-272AA	TO-272-6
CLF1G0060S-10U	Ampleon USA Inc.	RF FET HEMT 150V 14.5DB SOT1227B Transistor Type: HEMT Frequency: 3GHz ~ 3.5GHz Gain: 14.5dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 50mA Power - Output: 10W Voltage - Rated: 150V Package / Case: SOT-1227B Supplier Device Package: SOT-1227B	pacchetto: SOT-1227B	Azione6.544	3GHz ~ 3.5GHz	14.5dB	50V	-	-	50mA	10W	150V	SOT-1227B	SOT-1227B
BLF888A,112	Ampleon USA Inc.	RF FET LDMOS 110V 21DB SOT539A Transistor Type: LDMOS (Dual), Common Source Frequency: 860MHz Gain: 21dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 1.3A Power - Output: 600W Voltage - Rated: 110V Package / Case: SOT539A Supplier Device Package: SOT539A	pacchetto: SOT539A	Azione4.832	860MHz	21dB	50V	-	-	1.3A	600W	110V	SOT539A	SOT539A
PD57060-E	STMicroelectronics	FET RF 65V 945MHZ PWRSO10 Transistor Type: LDMOS Frequency: 945MHz Gain: 14.3dB Voltage - Test: 28V Current Rating: 7A Noise Figure: - Current - Test: 100mA Power - Output: 60W Voltage - Rated: 65V Package / Case: PowerSO-10 Exposed Bottom Pad Supplier Device Package: 10-PowerSO	pacchetto: PowerSO-10 Exposed Bottom Pad	Azione22.212	945MHz	14.3dB	28V	7A	-	100mA	60W	65V	PowerSO-10 Exposed Bottom Pad	10-PowerSO
BLA9H0912LS-1200PGJ	Ampleon USA Inc.	RF MOSFET LDMOS 50V SOT539B Transistor Type: LDMOS Frequency: 960MHz ~ 1.215GHz Gain: 19dB Voltage - Test: 50 V Current Rating: 2.8µA Noise Figure: - Current - Test: 200 mA Power - Output: 1200W Voltage - Rated: 106 V Package / Case: SOT-539B Supplier Device Package: SOT539B	pacchetto: -	Azione180	960MHz ~ 1.215GHz	19dB	50 V	2.8µA	-	200 mA	1200W	106 V	SOT-539B	SOT539B
BLC9H10XS-60PY	Ampleon USA Inc.	RF MOSFET SOT1273 Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
RF5L08350CB4	STMicroelectronics	RF MOSFET LDMOS 50V B4E Transistor Type: LDMOS Frequency: 1GHz Gain: 19dB Voltage - Test: 50 V Current Rating: 1µA Noise Figure: - Current - Test: 200 mA Power - Output: 400W Voltage - Rated: 110 V Package / Case: B4E Supplier Device Package: B4E	pacchetto: -	Azione39	1GHz	19dB	50 V	1µA	-	200 mA	400W	110 V	B4E	B4E
MWT-3F	CML Microcircuits	RF MOSFET MESFET 4V CHIP Transistor Type: MESFET Frequency: 500MHz ~ 26GHz Gain: 11dB Voltage - Test: 4 V Current Rating: 110mA Noise Figure: - Current - Test: 110 mA Power - Output: 22dBm Voltage - Rated: 6 V Package / Case: Die Supplier Device Package: Chip	pacchetto: -	Request a Quote	500MHz ~ 26GHz	11dB	4 V	110mA	-	110 mA	22dBm	6 V	Die	Chip