Pagina 29 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Frequency	Gain	Voltage - Test	Current Rating	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
PTFB191501FV1R250XTMA1	Infineon Technologies	FET RF LDMOS 150W H37248-2 Transistor Type: LDMOS Frequency: 1.99GHz Gain: 18dB Voltage - Test: 30V Current Rating: - Noise Figure: - Current - Test: 1.2A Power - Output: 150W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37248-2	pacchetto: 2-Flatpack, Fin Leads, Flanged	Azione3.552	1.99GHz	18dB	30V	-	-	1.2A	150W	65V	2-Flatpack, Fin Leads, Flanged	H-37248-2
PTFA092201E V1	Infineon Technologies	FET RF 65V 960MHZ H-36260-2 Transistor Type: LDMOS Frequency: 960MHz Gain: 18.5dB Voltage - Test: 30V Current Rating: 10µA Noise Figure: - Current - Test: 1.85A Power - Output: 220W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads Supplier Device Package: H-36260-2	pacchetto: 2-Flatpack, Fin Leads	Azione4.640	960MHz	18.5dB	30V	10µA	-	1.85A	220W	65V	2-Flatpack, Fin Leads	H-36260-2
BG3130E6327HTSA1	Infineon Technologies	MOSFET N-CH DUAL 8V SOT-363 Transistor Type: 2 N-Channel (Dual) Frequency: 800MHz Gain: 24dB Voltage - Test: 5V Current Rating: 25mA Noise Figure: 1.3dB Current - Test: 14mA Power - Output: - Voltage - Rated: 8V Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	pacchetto: 6-VSSOP, SC-88, SOT-363	Azione7.264	800MHz	24dB	5V	25mA	1.3dB	14mA	-	8V	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
MAGX-001214-125L00	M/A-Com Technology Solutions	TRANSISTOR GAN 125W 1.2-1.4GHZ Transistor Type: HEMT Frequency: 1.2GHz ~ 1.4GHz Gain: 18.4dB Voltage - Test: 50V Current Rating: 4.8A Noise Figure: - Current - Test: 100mA Power - Output: 125W Voltage - Rated: 65V Package / Case: - Supplier Device Package: -	pacchetto: -	Azione2.912	1.2GHz ~ 1.4GHz	18.4dB	50V	4.8A	-	100mA	125W	65V	-	-
NE5550979A-T1-A	CEL	FET RF 30V 900MHZ 79A-PKG Transistor Type: LDMOS Frequency: 900MHz Gain: 22dB Voltage - Test: 7.5V Current Rating: 3A Noise Figure: - Current - Test: 200mA Power - Output: 38.6dBm Voltage - Rated: 30V Package / Case: 79A Supplier Device Package: 79A	pacchetto: 79A	Azione333.408	900MHz	22dB	7.5V	3A	-	200mA	38.6dBm	30V	79A	79A
MRF8HP21080HR5	NXP	FET RF 2CH 65V 2.17GHZ NI780-4 Transistor Type: LDMOS (Dual) Frequency: 2.17GHz Gain: 14.4dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 150mA Power - Output: 16W Voltage - Rated: 65V Package / Case: NI-780-4 Supplier Device Package: NI-780-4	pacchetto: NI-780-4	Azione5.968	2.17GHz	14.4dB	28V	-	-	150mA	16W	65V	NI-780-4	NI-780-4
MRF6V4300NR1	NXP	FET RF 110V 450MHZ TO-270-4 Transistor Type: LDMOS Frequency: 450MHz Gain: 22dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 900mA Power - Output: 300W Voltage - Rated: 110V Package / Case: TO-270AB Supplier Device Package: TO-270 WB-4	pacchetto: TO-270AB	Azione6.992	450MHz	22dB	50V	-	-	900mA	300W	110V	TO-270AB	TO-270 WB-4
MRFE6S9201HSR5	NXP	FET RF 66V 880MHZ NI-780S Transistor Type: LDMOS Frequency: 880MHz Gain: 20.8dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.4A Power - Output: 40W Voltage - Rated: 66V Package / Case: NI-780S Supplier Device Package: NI-780S	pacchetto: NI-780S	Azione3.216	880MHz	20.8dB	28V	-	-	1.4A	40W	66V	NI-780S	NI-780S
MRF7S38075HSR3	NXP	FET RF 65V 3.6GHZ NI-780S Transistor Type: LDMOS Frequency: 3.4GHz ~ 3.6GHz Gain: 14dB Voltage - Test: 30V Current Rating: - Noise Figure: - Current - Test: 900mA Power - Output: 12W Voltage - Rated: 65V Package / Case: NI-780S Supplier Device Package: NI-780S	pacchetto: NI-780S	Azione7.620	3.4GHz ~ 3.6GHz	14dB	30V	-	-	900mA	12W	65V	NI-780S	NI-780S
PD55025	STMicroelectronics	FET RF 40V 500MHZ PWRSO-10 Transistor Type: LDMOS Frequency: 500MHz Gain: 14.5dB Voltage - Test: 12.5V Current Rating: 7A Noise Figure: - Current - Test: 200mA Power - Output: 25W Voltage - Rated: 40V Package / Case: PowerSO-10 Exposed Bottom Pad Supplier Device Package: 10-PowerSO	pacchetto: PowerSO-10 Exposed Bottom Pad	Azione3.248	500MHz	14.5dB	12.5V	7A	-	200mA	25W	40V	PowerSO-10 Exposed Bottom Pad	10-PowerSO
MRF374A	NXP	FET RF 70V 863MHZ NI-650 Transistor Type: LDMOS Frequency: 857MHz ~ 863MHz Gain: 17.3dB Voltage - Test: 32V Current Rating: - Noise Figure: - Current - Test: 400mA Power - Output: 130W Voltage - Rated: 70V Package / Case: NI-650 Supplier Device Package: NI-650	pacchetto: NI-650	Azione6.208	857MHz ~ 863MHz	17.3dB	32V	-	-	400mA	130W	70V	NI-650	NI-650
MRF6P23190HR5	NXP	FET RF 68V 2.39GHZ NI-1230 Transistor Type: LDMOS Frequency: 2.39GHz Gain: 14dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.9A Power - Output: 40W Voltage - Rated: 68V Package / Case: NI-1230 Supplier Device Package: NI-1230	pacchetto: NI-1230	Azione3.664	2.39GHz	14dB	28V	-	-	1.9A	40W	68V	NI-1230	NI-1230
NE3503M04-T2-A	CEL	FET RF 4V 12GHZ M04 Transistor Type: HFET Frequency: 12GHz Gain: 12dB Voltage - Test: 2V Current Rating: 70mA Noise Figure: 0.45dB Current - Test: 10mA Power - Output: - Voltage - Rated: 4V Package / Case: SOT-343F Supplier Device Package: M04	pacchetto: SOT-343F	Azione4.469.856	12GHz	12dB	2V	70mA	0.45dB	10mA	-	4V	SOT-343F	M04
PTFB193404FV1R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: LDMOS Frequency: 1.99GHz Gain: 19dB Voltage - Test: 30V Current Rating: - Noise Figure: - Current - Test: 2.6A Power - Output: 80W Voltage - Rated: 65V Package / Case: H-37275-6/2 Supplier Device Package: H-37275-6/2	pacchetto: H-37275-6/2	Azione2.816	1.99GHz	19dB	30V	-	-	2.6A	80W	65V	H-37275-6/2	H-37275-6/2
PTAC240502FCV1R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione2.112	-	-	-	-	-	-	-	-	-	-
MMRF1005HSR5	NXP	FET RF 120V 1.3GHZ NI-780S Transistor Type: LDMOS Frequency: 1.3GHz Gain: 22.7dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 100mA Power - Output: 250W Voltage - Rated: 120V Package / Case: NI-780S Supplier Device Package: NI-780S	pacchetto: NI-780S	Azione6.144	1.3GHz	22.7dB	50V	-	-	100mA	250W	120V	NI-780S	NI-780S
BLC9G20XS-550AVT	Ampleon USA Inc.	RF FET LDMOS 65V 15.4DB SOT12587 Transistor Type: LDMOS Frequency: 1.81GHz ~ 1.88GHz Gain: 15.4dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.1A Power - Output: 580W Voltage - Rated: 65V Package / Case: SOT-1258-7 Supplier Device Package: SOT-1258-7	pacchetto: SOT-1258-7	Azione2.304	1.81GHz ~ 1.88GHz	15.4dB	28V	-	-	1.1A	580W	65V	SOT-1258-7	SOT-1258-7
A2T18S160W31GSR3	NXP	IC TRANS RF LDMOS Transistor Type: LDMOS Frequency: 1.88GHz Gain: 19.9dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1A Power - Output: 32W Voltage - Rated: 65V Package / Case: NI-780GS-2L2LA Supplier Device Package: NI-780GS-2L2LA	pacchetto: NI-780GS-2L2LA	Azione6.240	1.88GHz	19.9dB	28V	-	-	1A	32W	65V	NI-780GS-2L2LA	NI-780GS-2L2LA
MRF8P20100HSR3	NXP	FET RF 2CH 65V 2.03GHZ NI780H-4 Transistor Type: LDMOS (Dual) Frequency: 2.03GHz Gain: 16dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 400mA Power - Output: 20W Voltage - Rated: 65V Package / Case: NI-780S-4 Supplier Device Package: NI-780S-4	pacchetto: NI-780S-4	Azione7.232	2.03GHz	16dB	28V	-	-	400mA	20W	65V	NI-780S-4	NI-780S-4
NE3515S02-T1C-A	CEL	FET RF HFET 12GHZ 2V 10MA S02 Transistor Type: HFET Frequency: 12GHz Gain: 12.5dB Voltage - Test: 2V Current Rating: 88mA Noise Figure: 0.3dB Current - Test: 10mA Power - Output: 14dBm Voltage - Rated: 4V Package / Case: 4-SMD, Flat Leads Supplier Device Package: S02	pacchetto: 4-SMD, Flat Leads	Azione362.196	12GHz	12.5dB	2V	88mA	0.3dB	10mA	14dBm	4V	4-SMD, Flat Leads	S02
MRF6VP2600HR5	NXP	FET RF 2CH 110V 225MHZ NI-1230 Transistor Type: LDMOS (Dual) Frequency: 225MHz Gain: 25dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 2.6A Power - Output: 125W Voltage - Rated: 110V Package / Case: NI-1230 Supplier Device Package: NI-1230	pacchetto: NI-1230	Azione3.840	225MHz	25dB	50V	-	-	2.6A	125W	110V	NI-1230	NI-1230
LET9060F	STMicroelectronics	MOSFET N-CH 80V 12A M-250 Transistor Type: LDMOS Frequency: 945MHz Gain: 18dB Voltage - Test: 28V Current Rating: 12A Noise Figure: - Current - Test: 400mA Power - Output: 75W Voltage - Rated: 80V Package / Case: M250 Supplier Device Package: M250	pacchetto: M250	Azione6.912	945MHz	18dB	28V	12A	-	400mA	75W	80V	M250	M250
275-102N06A-00	IXYS	RF MOSFET N-CHANNEL DE275 Transistor Type: N-Channel Frequency: 100MHz Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: 590W Voltage - Rated: 1000V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: DE275	pacchetto: 6-SMD, Flat Lead Exposed Pad	Azione5.616	100MHz	-	-	1mA	-	-	590W	1000V	6-SMD, Flat Lead Exposed Pad	DE275
MRFE6VS25LR5	NXP	FET RF 133V 512MHZ NI360L Transistor Type: LDMOS Frequency: 512MHz Gain: 25.9dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 10mA Power - Output: 25W Voltage - Rated: 133V Package / Case: NI-360 Supplier Device Package: NI-360	pacchetto: NI-360	Azione5.104	512MHz	25.9dB	50V	-	-	10mA	25W	133V	NI-360	NI-360
DE275-102N06A	IXYS-RF	RF MOSFET DE275 Transistor Type: MOSFET (Metal Oxide) Frequency: - Gain: - Voltage - Test: - Current Rating: 8A Noise Figure: - Current - Test: - Power - Output: 590W Voltage - Rated: 1000 V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: DE275	pacchetto: -	Request a Quote	-	-	-	8A	-	-	590W	1000 V	6-SMD, Flat Lead Exposed Pad	DE275
A2T18S166W12SR3	NXP	RF MOSFET LDMOS NI780 Transistor Type: LDMOS Frequency: 1.805GHz ~ 1.995GHz Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: 38W Voltage - Rated: 28 V Package / Case: NI-780-2S2L Supplier Device Package: NI-780-2S2L	pacchetto: -	Request a Quote	1.805GHz ~ 1.995GHz	-	-	-	-	-	38W	28 V	NI-780-2S2L	NI-780-2S2L
PXAC180602MD-V1-R500	MACOM Technology Solutions	RF MOSFET LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
CG2H80120D-GP4	MACOM Technology Solutions	RF MOSFET HEMT 28V DIE Transistor Type: HEMT Frequency: 8GHz Gain: 12dB Voltage - Test: 28 V Current Rating: 28A Noise Figure: - Current - Test: - Power - Output: 120W Voltage - Rated: 84 V Package / Case: Die Supplier Device Package: Die	pacchetto: -	Azione120	8GHz	12dB	28 V	28A	-	-	120W	84 V	Die	Die