Pagina 129 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - RF

Record 3.855
Pagina  129/138
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA091201FV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 120W H-37248-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 110W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione6.416
960MHz
19dB
28V
10µA
-
750mA
110W
65V
2-Flatpack, Fin Leads, Flanged
H-37248-2
PTFA081501F V1
Infineon Technologies

IC FET RF LDMOS 150W H-31248-2

  • Transistor Type: LDMOS
  • Frequency: 900MHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-31248-2
pacchetto: 2-Flatpack, Fin Leads
Azione6.208
900MHz
18dB
28V
10µA
-
950mA
150W
65V
2-Flatpack, Fin Leads
H-31248-2
PTFA241301E V1
Infineon Technologies

IC FET RF LDMOS 130W H-30260-2

  • Transistor Type: LDMOS
  • Frequency: 2.42GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.15A
  • Power - Output: 130W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-30260-2
pacchetto: 2-Flatpack, Fin Leads
Azione3.552
2.42GHz
14dB
28V
10µA
-
1.15A
130W
65V
2-Flatpack, Fin Leads
H-30260-2
BLM7G24S-30BGY
Ampleon USA Inc.

RF FET LDMOS 65V 31.5DB SOT12121

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 31.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 75mA
  • Power - Output: 1.6W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1212-1
  • Supplier Device Package: 16-HSOP
pacchetto: SOT-1212-1
Azione7.472
2.11GHz ~ 2.17GHz
31.5dB
28V
-
-
75mA
1.6W
65V
SOT-1212-1
16-HSOP
MAGX-000035-05000P
M/A-Com Technology Solutions

FET RF 65V 1MHZ 14DFN

  • Transistor Type: HEMT
  • Frequency: 1MHz
  • Gain: 14dB
  • Voltage - Test: 50V
  • Current Rating: 3mA
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: 14-VDFN Exposed Pad
  • Supplier Device Package: 14-DFN (3x6)
pacchetto: 14-VDFN Exposed Pad
Azione3.280
1MHz
14dB
50V
3mA
-
100mA
12W
65V
14-VDFN Exposed Pad
14-DFN (3x6)
BLF7G27L-135,118
Ampleon USA Inc.

TRANSISTOR RF PWR LDMOS SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.6GHz ~ 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 25W
  • Voltage - Rated: -
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
pacchetto: SOT-502A
Azione3.488
2.6GHz ~ 2.7GHz
16.5dB
28V
-
-
1.3A
25W
-
SOT-502A
LDMOST
BLF7G15LS-200,112
Ampleon USA Inc.

RF FET LDMOS 65V 19.5DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.47GHz ~ 1.51GHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: 56A
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione5.568
1.47GHz ~ 1.51GHz
19.5dB
28V
56A
-
1.6A
50W
65V
SOT-502B
SOT502B
BLF7G22L-130,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
pacchetto: SOT-502A
Azione4.976
2.11GHz ~ 2.17GHz
18.5dB
28V
28A
-
950mA
30W
65V
SOT-502A
LDMOST
MRF7S18170HSR5
NXP

FET RF 65V 1.81GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
pacchetto: NI-880S
Azione3.280
1.81GHz
17.5dB
28V
-
-
1.4A
50W
65V
NI-880S
NI-880S
hot MRF6S18100NBR1
NXP

FET RF 68V 1.99GHZ TO2724

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 100W
  • Voltage - Rated: 68V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
pacchetto: TO-272BB
Azione20.268
1.99GHz
14.5dB
28V
-
-
900mA
100W
68V
TO-272BB
TO-272 WB-4
hot ATF-34143-TR1
Broadcom Limited

FET RF 5.5V 2GHZ SOT-343

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 17.5dB
  • Voltage - Test: 4V
  • Current Rating: 145mA
  • Noise Figure: 0.5dB
  • Current - Test: 60mA
  • Power - Output: 20dBm
  • Voltage - Rated: 5.5V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacchetto: SC-82A, SOT-343
Azione166.920
2GHz
17.5dB
4V
145mA
0.5dB
60mA
20dBm
5.5V
SC-82A, SOT-343
SOT-343
BF1201,215
NXP

MOSFET 2N-CH 10V 30MA SOT143B

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 29dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 1dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 10V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
pacchetto: TO-253-4, TO-253AA
Azione3.456
400MHz
29dB
5V
30mA
1dB
15mA
-
10V
TO-253-4, TO-253AA
SOT-143B
PTVA104501EHV1R0XTMA1
Infineon Technologies

IC AMP RF LDMOS H-33288-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 17.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 450W
  • Voltage - Rated: 105V
  • Package / Case: H-33288-2
  • Supplier Device Package: H-33288-2
pacchetto: H-33288-2
Azione6.256
960MHz ~ 1.215GHz
17.5dB
50V
-
-
200mA
450W
105V
H-33288-2
H-33288-2
AFT18H357-24SR6
NXP

FET RF 2CH 65V 1.81GHZ NI1230-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.81GHz
  • Gain: 17.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
pacchetto: NI-1230-4LS2L
Azione5.376
1.81GHz
17.3dB
28V
-
-
800mA
63W
65V
NI-1230-4LS2L
NI-1230-4LS2L
MRF8S9202GNR3
NXP

FET RF 70V 920MHZ OM780-2G

  • Transistor Type: N-Channel
  • Frequency: 920MHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 58W
  • Voltage - Rated: 70V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
pacchetto: OM-780-2
Azione7.056
920MHz
19dB
28V
-
-
1.3A
58W
70V
OM-780-2
OM-780-2
PD55035S-E
STMicroelectronics

FET RF 40V 500MHZ PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 16.9dB
  • Voltage - Test: 12.5V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 35W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
pacchetto: PowerSO-10 Exposed Bottom Pad
Azione7.392
500MHz
16.9dB
12.5V
7A
-
200mA
35W
40V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
hot ATF-36163-TR1G
Broadcom Limited

FET RF 3V 4GHZ SOT-363

  • Transistor Type: pHEMT FET
  • Frequency: 4GHz
  • Gain: 15.8dB
  • Voltage - Test: 2V
  • Current Rating: 40mA
  • Noise Figure: 0.6dB
  • Current - Test: 15mA
  • Power - Output: 5dBm
  • Voltage - Rated: 3V
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione944.352
4GHz
15.8dB
2V
40mA
0.6dB
15mA
5dBm
3V
6-TSSOP, SC-88, SOT-363
SOT-363
MRF177
M/A-Com Technology Solutions

FET RF 2CH 65V 400MHZ 744A-01

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 400MHz
  • Gain: 12dB
  • Voltage - Test: 28V
  • Current Rating: 16A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 100W
  • Voltage - Rated: 65V
  • Package / Case: 744A-01
  • Supplier Device Package: 744A-01, Style 2
pacchetto: 744A-01
Azione5.280
400MHz
12dB
28V
16A
-
200mA
100W
65V
744A-01
744A-01, Style 2
ARF449AG
Microsemi Corporation

RF PWR MOSFET 450V TO-247

  • Transistor Type: N-Channel
  • Frequency: 81.36MHz
  • Gain: 13dB
  • Voltage - Test: 150V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 90W
  • Voltage - Rated: 450V
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: TO-247-3
Azione7.072
81.36MHz
13dB
150V
9A
-
-
90W
450V
TO-247-3
TO-247
BLF8G24LS-100GVJ
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT1244C

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244C
  • Supplier Device Package: CDFM6
pacchetto: SOT-1244C
Azione4.992
2.3GHz ~ 2.4GHz
18dB
28V
-
-
900mA
25W
65V
SOT-1244C
CDFM6
BF556A,215
NXP

JFET N-CH 30V 7MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 7mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.744
-
-
-
7mA
-
-
-
30V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BLF8G27LS-140V,118
Ampleon USA Inc.

RF FET LDMOS 65V 17.4DB SOT1120B

  • Transistor Type: LDMOS
  • Frequency: 2.63GHz ~ 2.69GHz
  • Gain: 17.4dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1120B
  • Supplier Device Package: CDFM6
pacchetto: SOT-1120B
Azione5.008
2.63GHz ~ 2.69GHz
17.4dB
32V
-
-
1.3A
45W
65V
SOT-1120B
CDFM6
B11G3742N80DYZ
Ampleon USA Inc.

RF MOSFET LDMOS 36QFN

  • Transistor Type: LDMOS
  • Frequency: 3.7GHz ~ 4.2GHz
  • Gain: 32dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 28 V
  • Package / Case: 36-QFN Exposed Pad
  • Supplier Device Package: 36-PQFN (12x7)
pacchetto: -
Request a Quote
3.7GHz ~ 4.2GHz
32dB
-
-
-
-
-
28 V
36-QFN Exposed Pad
36-PQFN (12x7)
MHT1108NT1
NXP

RF MOSFET LDMOS 32V 16DFN

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 18.6dB
  • Voltage - Test: 32 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 110 mA
  • Power - Output: 12.5W
  • Voltage - Rated: 65 V
  • Package / Case: 16-VDFN Exposed Pad
  • Supplier Device Package: 16-DFN (4x6)
pacchetto: -
Request a Quote
2.45GHz
18.6dB
32 V
10µA
-
110 mA
12.5W
65 V
16-VDFN Exposed Pad
16-DFN (4x6)
1214GN-600VHE
Microchip Technology

RF MOSFET HEMT 50V 55-KR

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 600W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
pacchetto: -
Request a Quote
1.2GHz ~ 1.4GHz
17.5dB
50 V
-
-
100 mA
600W
150 V
55-KR
55-KR
BLS9G2731L-400
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 13dB
  • Voltage - Test: 32 V
  • Current Rating: 4µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 400W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502A
pacchetto: -
Request a Quote
2.7GHz ~ 3.1GHz
13dB
32 V
4µA
-
400 mA
400W
65 V
SOT-502A
SOT502A
MWT-1F
CML Microcircuits

RF MOSFET MESFET 4V CHIP

  • Transistor Type: MESFET
  • Frequency: 100MHz ~ 12GHz
  • Gain: 7dB
  • Voltage - Test: 4 V
  • Current Rating: 230mA
  • Noise Figure: 2dB
  • Current - Test: 230 mA
  • Power - Output: -
  • Voltage - Rated: 6 V
  • Package / Case: Die
  • Supplier Device Package: Chip
pacchetto: -
Request a Quote
100MHz ~ 12GHz
7dB
4 V
230mA
2dB
230 mA
-
6 V
Die
Chip
NTD4860NT4H
onsemi

RF MOSFET 25V DPAK

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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