Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Frequency | Gain | Voltage - Test | Current Rating | Noise Figure | Current - Test | Power - Output | Voltage - Rated | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Ampleon USA Inc. |
RF FET LDMOS 65V 22.5DB SOT1135B
|
pacchetto: SOT-1135B |
Azione3.936 |
|
1.48GHz ~ 1.51GHz | 22.5dB | 28V | - | - | 375mA | 2.5W | 65V | SOT-1135B | SOT1135B |
||
NXP |
FET RF 2CH 65V 1.99GHZ NI1230S-8
|
pacchetto: SOT-1110B |
Azione5.056 |
|
1.99GHz | 18.2dB | 30V | - | - | 1.6A | 74W | 65V | SOT-1110B | NI1230S-8 |
||
Ampleon USA Inc. |
RF FET LDMOS 75V 12.5DB SOT467C
|
pacchetto: SOT467C |
Azione5.232 |
|
2GHz | 12.5dB | 26V | 2.2A | - | 85mA | 10W | 75V | SOT467C | SOT467C |
||
NXP |
FET RF 66V 1.99GHZ NI780S
|
pacchetto: NI-780S |
Azione3.872 |
|
1.93GHz ~ 1.99GHz | 17.9dB | 28V | - | - | 1.6A | 56W | 66V | NI-780S | NI-780S |
||
NXP |
FET RF 68V 1.88GHZ NI880S
|
pacchetto: NI-880S |
Azione2.896 |
|
1.88GHz | 16dB | 28V | - | - | 1.2A | 29W | 68V | NI-880S | NI-880S |
||
NXP |
FET RF 68V 2.39GHZ NI-880S
|
pacchetto: NI-880S |
Azione2.256 |
|
2.39GHz | 15.2dB | 28V | - | - | 1.3A | 28W | 68V | NI-880S | NI-880S |
||
Infineon Technologies |
IC FET RF LDMOS 70W H-37265-2
|
pacchetto: 2-Flatpack, Fin Leads, Flanged |
Azione4.560 |
|
1.84GHz | 16.5dB | 28V | 10µA | - | 550mA | 60W | 65V | 2-Flatpack, Fin Leads, Flanged | H-37265-2 |
||
NXP |
IC TRANS RF LDMOS
|
pacchetto: NI-1230S-8 Variant, Flat Leads |
Azione5.648 |
|
1.805GHz ~ 1.88GHz | 16.5dB | - | - | - | - | 89W | 30V | NI-1230S-8 Variant, Flat Leads | NI-1230S-8 |
||
STMicroelectronics |
TRANS RF N-CH HF/VHF/UHF M177
|
pacchetto: M177 |
Azione6.352 |
|
- | - | - | - | - | - | - | - | M177 | M177 |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 18.5DB SOT539B
|
pacchetto: SOT539B |
Azione5.120 |
|
2.3GHz ~ 2.4GHz | 18.5dB | 28V | - | - | 1.2A | 30W | 65V | SOT539B | SOT539B |
||
NXP |
FET RF 65V 1.93GHZ NI880XGS
|
pacchetto: NI-880XS-2 GW |
Azione6.512 |
|
1.93GHz | 17.8dB | 30V | - | - | 1.3A | 50W | 65V | NI-880XS-2 GW | NI-880XS-2 Gull |
||
STMicroelectronics |
FET RF 40V 870MHZ
|
pacchetto: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Azione3.584 |
|
870MHz | 17.3dB | 13.6V | 7A | - | 300mA | 10W | 40V | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10RF (Formed Lead) |
||
Ampleon USA Inc. |
RF FET LDMOS 104V 22DB 12VDFN
|
pacchetto: 12-VDFN Exposed Pad |
Azione5.328 |
|
860MHz | 22.8dB | 50V | - | - | 15mA | 2.5W | 104V | 12-VDFN Exposed Pad | 12-HVSON (5x6) |
||
NXP |
FET RF 65V 2.17GHZ PLD1.5W
|
pacchetto: PLD-1.5W-2 |
Azione6.160 |
|
2.17GHz | 21.7dB | 28V | - | - | 90mA | 1.26W | 65V | PLD-1.5W-2 | PLD-1.5W-2 |
||
NXP |
MOSFET N-CH 3V 10MA SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione2.496 |
|
- | - | - | 10mA | - | - | - | 3V | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) |
||
Ampleon USA Inc. |
RF FET LDMOS 135V 24.4DB SOT539B
|
pacchetto: SOT539B |
Azione3.312 |
|
108MHz | 24.4dB | 50V | - | - | 40mA | 1400W | 135V | SOT539B | SOT539B |
||
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440095
|
pacchetto: 440095 |
Azione6.368 |
|
2.5GHz | 21.5dB | 28V | - | - | 1.2A | 120W | 84V | 440095 | 440095 |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 19.8DB SOT1120B
|
pacchetto: SOT-1120B |
Azione4.992 |
|
1.81GHz ~ 1.88GHz | 19.8dB | 28V | - | - | 800mA | 35.5W | 65V | SOT-1120B | CDFM6 |
||
Ampleon USA Inc. |
RF FET LDMOS 100V 17DB SOT1135B
|
pacchetto: SOT-1135B |
Azione4.720 |
|
1.2GHz ~ 1.4GHz | 17dB | 50V | - | - | 50mA | 130W | 100V | SOT-1135B | CDFM2 |
||
Broadcom Limited |
FET RF 5.5V 2GHZ SOT-343
|
pacchetto: SC-82A, SOT-343 |
Azione2.644.248 |
|
2GHz | 17.5dB | 4V | 145mA | 0.5dB | 60mA | 20dBm | 5.5V | SC-82A, SOT-343 | SOT-343 |
||
Freescale Semiconductor |
RF MOSFET 26V NI400
|
pacchetto: - |
Request a Quote |
|
1.8GHz ~ 2GHz | 14dB | 26 V | 1µA | - | 250 mA | 30W | 65 V | NI-400S | NI-400S |
||
Fairchild Semiconductor |
RF MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - |
||
Microchip Technology |
DC-12 GHZ 25W DISCRETE GAN HEMT
|
pacchetto: - |
Request a Quote |
|
12GHz | 9.5dB | 28 V | 2A | - | 250 mA | 25W | 28 V | Die | Die |
||
MACOM Technology Solutions |
RF MOSFET LDMOS 30V H-33288-6
|
pacchetto: - |
Request a Quote |
|
2.17GHz | 18.1dB | 30 V | - | - | 1.85 A | 55W | 65 V | H-33288-6 | H-33288-6 |
||
MACOM Technology Solutions |
RF MOSFET HEMT H-37248C-4
|
pacchetto: - |
Request a Quote |
|
1.93GHz ~ 2.02GHz | 14.8dB | - | - | - | - | 500W | 48 V | H-37248C-4 | H-37248C-4 |
||
Ampleon USA Inc. |
RF MOSFET LDMOS 28V SOT1258-4
|
pacchetto: - |
Request a Quote |
|
1.805GHz ~ 1.88GHz | 15.4dB | 28 V | 2.8µA | - | 2 A | 720W | 65 V | SOT-1258-4 | SOT1258-4 |
||
MACOM Technology Solutions |
RF MOSFET HEMT 28V 440196
|
pacchetto: - |
Request a Quote |
|
2.3GHz ~ 2.9GHz | 15dB | 28 V | - | - | 100 mA | 15W | 84 V | 440196 | 440196 |
||
MACOM Technology Solutions |
RF MOSFET 28V
|
pacchetto: - |
Request a Quote |
|
2MHz ~ 175MHz | 11dB | 28 V | 1mA | - | 50 mA | 5W | 65 V | 4L-FLG | - |