Pagina 93 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO6601_001	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 6-TSOP FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	pacchetto: SC-74, SOT-457	Azione7.984	Logic Level Gate	30V	3.4A, 2.3A	60 mOhm @ 3.4A, 10V	1.5V @ 250µA	12nC @ 10V	285pF @ 15V	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
VQ1001P-E3	Vishay Siliconix	MOSFET 4N-CH 30V 0.83A 14DIP FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 830mA Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: - Supplier Device Package: 14-DIP	pacchetto: -	Azione2.672	Logic Level Gate	30V	830mA	1.75 Ohm @ 200mA, 5V	2.5V @ 1mA	-	110pF @ 15V	2W	-55°C ~ 150°C (TJ)	Through Hole	-	14-DIP
AO8804	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 8A 8TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 13 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: 8-TSSOP (0.173", 4.40mm Width)	Azione74.952	Logic Level Gate	20V	-	13 mOhm @ 8A, 10V	1V @ 250µA	17.9nC @ 4.5V	1810pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDMJ1032C	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V 3.2A/2.5A SC75 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A, 2.5A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: SC-75, MicroFET	pacchetto: 6-WFDFN Exposed Pad	Azione5.984	Logic Level Gate	20V	3.2A, 2.5A	90 mOhm @ 3.2A, 4.5V	1.5V @ 250µA	3nC @ 4.5V	270pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	SC-75, MicroFET
USB10H	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 1.9A SSOT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.9A Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione393.288	Logic Level Gate	20V	1.9A	170 mOhm @ 1.9A, 4.5V	1.5V @ 250µA	4.2nC @ 4.5V	441pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
GWM120-0075P3-SL	IXYS	MOSFET 6N-CH 75V 118A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 118A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	pacchetto: 17-SMD, Flat Leads	Azione4.352	Standard	75V	118A	5.5 mOhm @ 60A, 10V	4V @ 1mA	100nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
SI7236DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 60A PWRPAK 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Power - Max: 46W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacchetto: PowerPAK? SO-8 Dual	Azione4.240	Standard	20V	60A	5.2 mOhm @ 20.7A, 4.5V	1.5V @ 250µA	105nC @ 10V	4000pF @ 10V	46W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
NTLLD4901NFTWG	ON Semiconductor	MOSFET 2N-CH 30V 5.5A/6.3A WDFN8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V Power - Max: 800mW, 810mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WDFN (3x3)	pacchetto: 8-PowerWDFN	Azione3.456	Logic Level Gate	30V	5.5A, 6.3A	17.4 mOhm @ 9A, 10V	2.2V @ 250µA	12nC @ 10V	605pF @ 15V	800mW, 810mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-WDFN (3x3)
SI4276DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Power - Max: 3.6W, 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione9.396	Logic Level Gate	30V	8A	15.3 mOhm @ 9.5A, 10V	2.5V @ 250µA	26nC @ 10V	1000pF @ 15V	3.6W, 2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMN2088DE6TA	Diodes Incorporated	MOSFET 2N-CH 20V 1.7A SOT-26 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 279pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	pacchetto: SOT-23-6	Azione733.356	Logic Level Gate	20V	1.7A	200 mOhm @ 1A, 4.5V	1V @ 250µA	3.8nC @ 4.5V	279pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
CSD87384M	Texas Instruments	MOSFET 2N-CH 30V 30A 5PTAB FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 25A, 8V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power - Max: 8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-LGA Supplier Device Package: 5-PTAB (5x3.5)	pacchetto: 5-LGA	Azione5.808	Logic Level Gate	30V	30A	7.7 mOhm @ 25A, 8V	1.9V @ 250µA	9.2nC @ 4.5V	1150pF @ 15V	8W	-55°C ~ 150°C (TJ)	Surface Mount	5-LGA	5-PTAB (5x3.5)
NX3008NBKSH	Nexperia USA Inc.	NX3008NBKS/SC-88/REEL 7" Q3/T4 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 445mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione5.824	Standard	30V	350mA (Ta)	1.4 Ohm @ 350mA, 4.5V	1.1V @ 250µA	0.68nC @ 4.5V	50pF @ 15V	445mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
SQ4961EY-T1_GE3	Vishay Siliconix	MOSFET DUAL P-CHAN 60V SO8 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V Power - Max: 3.3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione7.840	Standard	60V	4.4A (Tc)	85 mOhm @ 3.5A, 10V	2.5V @ 250µA	40nC @ 10V	1140pF @ 25V	3.3W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3660AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/30A 8QFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	pacchetto: 8-PowerTDFN	Azione5.040	Logic Level Gate	30V	13A, 30A	8 mOhm @ 13A, 10V	2.7V @ 250µA	30nC @ 10V	2230pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
IRF7324PBF	Infineon Technologies	MOSFET 2P-CH 20V 9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione32.034	Logic Level Gate	20V	9A	18 mOhm @ 9A, 4.5V	1V @ 250µA	63nC @ 5V	2940pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF9358PBF	Infineon Technologies	MOSFET 2P-CH 30V 9.2A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.2A Rds On (Max) @ Id, Vgs: 16.3 mOhm @ 9.2A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione22.560	Logic Level Gate	30V	9.2A	16.3 mOhm @ 9.2A, 10V	2.4V @ 25µA	38nC @ 10V	1740pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRL6372TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 8.1A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione33.840	Logic Level Gate	30V	8.1A	17.9 mOhm @ 8.1A, 4.5V	1.1V @ 10µA	11nC @ 4.5V	1020pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMA6023PZT	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.6A 6MICROFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	pacchetto: 6-UDFN Exposed Pad	Azione13.428	Logic Level Gate	20V	3.6A	60 mOhm @ 3.6A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	885pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	6-MicroFET (2x2)
UM6K1NTN	Rohm Semiconductor	MOSFET 2N-CH 30V .1A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione3.766.380	Logic Level Gate	30V	100mA	8 Ohm @ 10mA, 4V	1.5V @ 100µA	-	13pF @ 5V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
FF17MR12W1M1HPB11BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	pacchetto: -	Azione84	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
FDZ1827NZ	Fairchild Semiconductor	MOSFET 2N-CH 20V 10A 6WLCSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Supplier Device Package: 6-WLCSP (1.3x2.3)	pacchetto: -	Request a Quote	-	20V	10A (Ta)	13mOhm @ 1A, 4.5V	1.2V @ 250µA	24nC @ 10V	2055pF @ 10V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFBGA, WLCSP	6-WLCSP (1.3x2.3)
EFC2K103NUZTDG	onsemi	MOSFET 2N-CH 12V 40A 10WLCSP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.3W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-WLCSP (3.54x1.77)	pacchetto: -	Azione288	Logic Level Gate, 2.5V Drive	12V	40A (Ta)	1.8mOhm @ 5A, 4.5V	1.3V @ 1mA	62nC @ 6V	-	3.3W (Ta)	150°C (TJ)	Surface Mount	10-SMD, No Lead	10-WLCSP (3.54x1.77)
AONY36304	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 20A/51A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 51A (Tc), 26A (Ta), 83A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (5x6)	pacchetto: -	Request a Quote	-	30V	20A (Ta), 51A (Tc), 26A (Ta), 83A (Tc)	5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V	2.2V @ 250µA, 1.9V @ 250µA	30nC @ 10V, 40nC @ 10V	1000pF @ 15V	3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (5x6)
RF3S49092SM9A	Fairchild Semiconductor	MOSFET N/P-CH 12V 20A TO263-5 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 10A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, 5V, 140mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V, 775pF @ 10V Power - Max: 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Supplier Device Package: TO-263-5	pacchetto: -	Request a Quote	Logic Level Gate	12V	20A (Tc), 10A (Tc)	60mOhm @ 20A, 5V, 140mOhm @ 10A, 5V	1V @ 250µA	25nC @ 10V, 24nC @ 10V	750pF @ 10V, 775pF @ 10V	50W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-6, D2PAK (5 Leads + Tab), TO-263BA	TO-263-5
TSM8588CS	Taiwan Semiconductor Corporation	MOSFET N/P-CH 60V 2.5A/5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc) Rds On (Max) @ Id, Vgs: 103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V, 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 30V, 436pF @ 30V Power - Max: 1.4W (Ta), 5.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: -	Request a Quote	-	60V	2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)	103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V	2.5V @ 250µA	9.4nC @ 10V, 9nC @ 10V	527pF @ 30V, 436pF @ 30V	1.4W (Ta), 5.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FW257-TL-E-ON	onsemi	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120HRM163AG	Microchip Technology	SIC 4N-CH 1200V/700V 173A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V Current - Continuous Drain (Id) @ 25°C: 173A (Tc), 124A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA, 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 464nC, 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, 4500pF @ 700V Power - Max: 745W (Tc), 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1200V (1.2kV), 700V	173A (Tc), 124A (Tc)	16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V	2.8V @ 6mA, 2.4V @ 4mA	464nC, 215nC @ 20V	6040pF @ 1000V, 4500pF @ 700V	745W (Tc), 365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
UPA679TB-T1-A	Renesas Electronics Corporation	MOSFET N/P-CH 20V SC-70 6SSP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 350mA, 250mA Rds On (Max) @ Id, Vgs: 570mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 10V Power - Max: 200mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88	pacchetto: -	Request a Quote	Logic Level Gate	20V	350mA, 250mA	570mOhm @ 300mA, 4.5V	-	-	28pF @ 10V	200mW	-	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88

AO6601_001

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6-TSOP

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

pacchetto: SC-74, SOT-457

Azione7.984

Logic Level Gate

30V

3.4A, 2.3A

60 mOhm @ 3.4A, 10V

1.5V @ 250µA

12nC @ 10V

285pF @ 15V

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

VQ1001P-E3

Vishay Siliconix

MOSFET 4N-CH 30V 0.83A 14DIP

FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 830mA
Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: 14-DIP

pacchetto: -

Azione2.672

Logic Level Gate

30V

830mA

1.75 Ohm @ 200mA, 5V

2.5V @ 1mA

-

110pF @ 15V

2W

-55°C ~ 150°C (TJ)

Through Hole

-

14-DIP

AO8804

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 8A 8TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 13 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

Azione74.952

Logic Level Gate

20V

-

13 mOhm @ 8A, 10V

1V @ 250µA

17.9nC @ 4.5V

1810pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

FDMJ1032C

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 3.2A/2.5A SC75

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A, 2.5A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Supplier Device Package: SC-75, MicroFET

pacchetto: 6-WFDFN Exposed Pad

Azione5.984

Logic Level Gate

20V

3.2A, 2.5A

90 mOhm @ 3.2A, 4.5V

1.5V @ 250µA

3nC @ 4.5V

270pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WFDFN Exposed Pad

SC-75, MicroFET

USB10H

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 1.9A SSOT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.9A
Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione393.288

Logic Level Gate

20V

1.9A

170 mOhm @ 1.9A, 4.5V

1.5V @ 250µA

4.2nC @ 4.5V

441pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

GWM120-0075P3-SL

IXYS

MOSFET 6N-CH 75V 118A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Supplier Device Package: ISOPLUS-DIL?

pacchetto: 17-SMD, Flat Leads

Azione4.352

Standard

75V

118A

5.5 mOhm @ 60A, 10V

4V @ 1mA

100nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Flat Leads

ISOPLUS-DIL?

SI7236DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 60A PWRPAK 8-SO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacchetto: PowerPAK? SO-8 Dual

Azione4.240

Standard

20V

60A

5.2 mOhm @ 20.7A, 4.5V

1.5V @ 250µA

105nC @ 10V

4000pF @ 10V

46W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

NTLLD4901NFTWG

ON Semiconductor

MOSFET 2N-CH 30V 5.5A/6.3A WDFN8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Power - Max: 800mW, 810mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3x3)

pacchetto: 8-PowerWDFN

Azione3.456

Logic Level Gate

30V

5.5A, 6.3A

17.4 mOhm @ 9A, 10V

2.2V @ 250µA

12nC @ 10V

605pF @ 15V

800mW, 810mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-WDFN (3x3)

SI4276DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Power - Max: 3.6W, 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione9.396

Logic Level Gate

30V

8A

15.3 mOhm @ 9.5A, 10V

2.5V @ 250µA

26nC @ 10V

1000pF @ 15V

3.6W, 2.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXMN2088DE6TA

Diodes Incorporated

MOSFET 2N-CH 20V 1.7A SOT-26

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 279pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

pacchetto: SOT-23-6

Azione733.356

Logic Level Gate

20V

1.7A

200 mOhm @ 1A, 4.5V

1V @ 250µA

3.8nC @ 4.5V

279pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

CSD87384M

Texas Instruments

MOSFET 2N-CH 30V 30A 5PTAB

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 25A, 8V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Power - Max: 8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-LGA
Supplier Device Package: 5-PTAB (5x3.5)

pacchetto: 5-LGA

Azione5.808

Logic Level Gate

30V

30A

7.7 mOhm @ 25A, 8V

1.9V @ 250µA

9.2nC @ 4.5V

1150pF @ 15V

8W

-55°C ~ 150°C (TJ)

Surface Mount

5-LGA

5-PTAB (5x3.5)

NX3008NBKSH

Nexperia USA Inc.

NX3008NBKS/SC-88/REEL 7" Q3/T4

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 445mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione5.824

Standard

30V

350mA (Ta)

1.4 Ohm @ 350mA, 4.5V

1.1V @ 250µA

0.68nC @ 4.5V

50pF @ 15V

445mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

SQ4961EY-T1_GE3

Vishay Siliconix

MOSFET DUAL P-CHAN 60V SO8

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
Power - Max: 3.3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione7.840

Standard

60V

4.4A (Tc)

85 mOhm @ 3.5A, 10V

2.5V @ 250µA

40nC @ 10V

1140pF @ 25V

3.3W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS3660AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/30A 8QFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

pacchetto: 8-PowerTDFN

Azione5.040

Logic Level Gate

30V

13A, 30A

8 mOhm @ 13A, 10V

2.7V @ 250µA

30nC @ 10V

2230pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

IRF7324PBF

Infineon Technologies

MOSFET 2P-CH 20V 9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione32.034

Logic Level Gate

20V

9A

18 mOhm @ 9A, 4.5V

1V @ 250µA

63nC @ 5V

2940pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF9358PBF

Infineon Technologies

MOSFET 2P-CH 30V 9.2A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Rds On (Max) @ Id, Vgs: 16.3 mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione22.560

Logic Level Gate

30V

9.2A

16.3 mOhm @ 9.2A, 10V

2.4V @ 25µA

38nC @ 10V

1740pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRL6372TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 8.1A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione33.840

Logic Level Gate

30V

8.1A

17.9 mOhm @ 8.1A, 4.5V

1.1V @ 10µA

11nC @ 4.5V

1020pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMA6023PZT

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.6A 6MICROFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

pacchetto: 6-UDFN Exposed Pad

Azione13.428

Logic Level Gate

20V

3.6A

60 mOhm @ 3.6A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

885pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

6-MicroFET (2x2)

UM6K1NTN

Rohm Semiconductor

MOSFET 2N-CH 30V .1A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione3.766.380

Logic Level Gate

30V

100mA

8 Ohm @ 10mA, 4V

1.5V @ 100µA

-

13pF @ 5V

150mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

FF17MR12W1M1HPB11BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

pacchetto: -

Azione84

-

1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B

FDZ1827NZ

Fairchild Semiconductor

MOSFET 2N-CH 20V 10A 6WLCSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Supplier Device Package: 6-WLCSP (1.3x2.3)

pacchetto: -

Request a Quote

-

20V

10A (Ta)

13mOhm @ 1A, 4.5V

1.2V @ 250µA

24nC @ 10V

2055pF @ 10V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-XFBGA, WLCSP

6-WLCSP (1.3x2.3)

EFC2K103NUZTDG

onsemi

MOSFET 2N-CH 12V 40A 10WLCSP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 6V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.3W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-WLCSP (3.54x1.77)

pacchetto: -

Azione288

Logic Level Gate, 2.5V Drive

12V

40A (Ta)

1.8mOhm @ 5A, 4.5V

1.3V @ 1mA

62nC @ 6V

-

3.3W (Ta)

150°C (TJ)

Surface Mount

10-SMD, No Lead

10-WLCSP (3.54x1.77)

AONY36304

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 20A/51A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 51A (Tc), 26A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)

pacchetto: -

Request a Quote

-

30V

20A (Ta), 51A (Tc), 26A (Ta), 83A (Tc)

5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V

2.2V @ 250µA, 1.9V @ 250µA

30nC @ 10V, 40nC @ 10V

1000pF @ 15V

3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerSMD, Flat Leads

8-DFN (5x6)

RF3S49092SM9A

Fairchild Semiconductor

MOSFET N/P-CH 12V 20A TO263-5

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 10A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, 5V, 140mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V, 775pF @ 10V
Power - Max: 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Supplier Device Package: TO-263-5

pacchetto: -

Request a Quote

Logic Level Gate

12V

20A (Tc), 10A (Tc)

60mOhm @ 20A, 5V, 140mOhm @ 10A, 5V

1V @ 250µA

25nC @ 10V, 24nC @ 10V

750pF @ 10V, 775pF @ 10V

50W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-6, D2PAK (5 Leads + Tab), TO-263BA

TO-263-5

TSM8588CS

Taiwan Semiconductor Corporation

MOSFET N/P-CH 60V 2.5A/5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V, 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 30V, 436pF @ 30V
Power - Max: 1.4W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: -

Request a Quote

-

60V

2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)

103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V

2.5V @ 250µA

9.4nC @ 10V, 9nC @ 10V

527pF @ 30V, 436pF @ 30V

1.4W (Ta), 5.7W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FW257-TL-E-ON

onsemi

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

MSCSM120HRM163AG

Microchip Technology

SIC 4N-CH 1200V/700V 173A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc), 124A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA, 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 464nC, 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, 4500pF @ 700V
Power - Max: 745W (Tc), 365W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

Request a Quote

-

1200V (1.2kV), 700V

173A (Tc), 124A (Tc)

16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V

2.8V @ 6mA, 2.4V @ 4mA

464nC, 215nC @ 20V

6040pF @ 1000V, 4500pF @ 700V

745W (Tc), 365W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

UPA679TB-T1-A

Renesas Electronics Corporation

MOSFET N/P-CH 20V SC-70 6SSP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 350mA, 250mA
Rds On (Max) @ Id, Vgs: 570mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 10V
Power - Max: 200mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88

pacchetto: -

Request a Quote

Logic Level Gate

20V

350mA, 250mA

570mOhm @ 300mA, 4.5V

-

28pF @ 10V

200mW

-

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88