Pagina 25 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  25/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AO4818L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.832
Standard
30V
8A
19 mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
888pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot TPCL4203(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XLGA
  • Supplier Device Package: 4-Chip LGA
pacchetto: 4-XLGA
Azione96.000
Standard
-
-
-
1.2V @ 200µA
-
685pF @ 10V
500mW
150°C (TJ)
Surface Mount
4-XLGA
4-Chip LGA
hot SI4967DY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione126.168
Logic Level Gate
12V
-
23 mOhm @ 7.5A, 4.5V
450mV @ 250µA (Min)
55nC @ 10V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDS4895C
Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 4.4A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 20V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.496
Standard
40V
5.5A, 4.4A
39 mOhm @ 5.5A, 10V
5V @ 250µA
10nC @ 10V
410pF @ 20V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NTJD2152PT4G
ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 775mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione2.992
Logic Level Gate
8V
775mA
300 mOhm @ 570mA, 4.5V
1V @ 250µA
4nC @ 4.5V
225pF @ 8V
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
APTM10HM05FG
Microsemi Corporation

MOSFET 4N-CH 100V 278A SP6

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 278A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
  • Power - Max: 780W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
pacchetto: SP6
Azione7.968
Standard
100V
278A
5 mOhm @ 125A, 10V
4V @ 5mA
700nC @ 10V
20000pF @ 25V
780W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
HUFA76407DK8T_F085
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.376
Logic Level Gate
60V
-
90 mOhm @ 3.8A, 10V
3V @ 250µA
11.2nC @ 10V
330pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
EPC2101ENGRT
EPC

TRANS GAN ASYMMETRICAL HALF BRID

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
  • Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione3.200
GaNFET (Gallium Nitride)
60V
9.5A, 38A
11.5 mOhm @ 20A, 5V
2.5V @ 2mA
2.7nC @ 5V
300pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
SI7972DP-T1-GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 60V 8A SO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
  • Power - Max: 22W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
pacchetto: PowerPAK? SO-8 Dual
Azione3.632
Standard
30V
8A (Tc)
18 mOhm @ 11A, 10V
2.7V @ 250µA
11nC @ 4.5V
1050pF @ 30V
22W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
BUK7K12-60EX
Nexperia USA Inc.

MOSFET 2N-CH 60V 40A LFPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 617pF @ 25V
  • Power - Max: 68W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacchetto: SOT-1205, 8-LFPAK56
Azione6.288
Standard
60V
40A
9.3 mOhm @ 10A, 10V
4V @ 1mA
10.4nC @ 10V
617pF @ 25V
68W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
SMA5131
Sanken

MOSFET 3N/3P-CH 250V 2A 12-SIP

  • FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
pacchetto: 12-SIP, Exposed Tab
Azione6.384
Standard
250V
2A
-
-
-
-
-
-
Through Hole
12-SIP, Exposed Tab
12-SIP
CMLDM7003TG TR
Central Semiconductor Corp

MOSFET 2N-CH 50V 0.28A SOT563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione29.922
Standard
50V
280mA
1.5 Ohm @ 50mA, 5V
1.2V @ 250µA
0.76nC @ 4.5V
50pF @ 25V
350mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
PMGD280UN,115
Nexperia USA Inc.

MOSFET 2N-CH 20V 0.87A 6TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 870mA
  • Rds On (Max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
  • Power - Max: 400mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione703.500
Logic Level Gate
20V
870mA
340 mOhm @ 200mA, 4.5V
1V @ 250µA
0.89nC @ 4.5V
45pF @ 20V
400mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
DMT10H017LPD-13
Diodes Incorporated

MOSFET 2N-CH 100V 54.7A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc)
  • Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
  • Power - Max: 2.2W (Ta), 78W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
pacchetto: -
Azione7.425
-
100V
54.7A (Tc)
17.4mOhm @ 17A, 10V
3V @ 250µA
28.6nC @ 10V
1986pF @ 50V
2.2W (Ta), 78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
FDMC0225
Fairchild Semiconductor

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMT3020LSDQ-13
Diodes Incorporated

MOSFET 2N-CH 30V 16A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
  • Power - Max: 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: -
Azione63.894
-
30V
16A (Tc)
20mOhm @ 9A, 10V
2.5V @ 250µA
7nC @ 10V
393pF @ 15V
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SISF02DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 25V 30.5A/60A PPAK

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
  • Power - Max: 5.2W (Ta), 69.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8SCD
  • Supplier Device Package: PowerPAK® 1212-8SCD
pacchetto: -
Azione72
-
25V
30.5A (Ta), 60A (Tc)
3.5mOhm @ 7A, 10V
2.3V @ 250µA
56nC @ 10V
2650pF @ 10V
5.2W (Ta), 69.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SCD
PowerPAK® 1212-8SCD
PJX8872B_R1_00001
Panjit International Inc.

MOSFET 2N-CH 60V 0.2A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V
  • Power - Max: 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Azione11.850
-
60V
200mA (Ta)
3Ohm @ 600mA, 10V
2.5V @ 250µA
0.82nC @ 4.5V
34pF @ 25V
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN2710UDW-13
Diodes Incorporated

MOSFET 2N-CH 20V 0.8A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
  • Power - Max: 360mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Request a Quote
-
20V
800mA (Ta)
450mOhm @ 600mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V
42pF @ 16V
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMP3165SVTQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 287pF @ 15V
  • Power - Max: 1.08W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacchetto: -
Request a Quote
-
30V
2.7A (Ta)
95mOhm @ 2.7A, 10V
2.2V @ 250µA
6.8nC @ 10V
287pF @ 15V
1.08W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
NVXR17S90M2SPB
onsemi

SIC 900V 8D MOSFET V-SSDC SPB

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 620A (Tj)
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 620A, 18V
  • Vgs(th) (Max) @ Id: 4.3V @ 200mA
  • Gate Charge (Qg) (Max) @ Vgs: 2400nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 400V
  • Power - Max: 1kW (Tj)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SSDC39
pacchetto: -
Request a Quote
-
900V
620A (Tj)
2.1mOhm @ 620A, 18V
4.3V @ 200mA
2400nC @ 18V
45000pF @ 400V
1kW (Tj)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SSDC39
SIZ320DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 25V 30A/40A 8PWR33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V
  • Power - Max: 16.7W, 31W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
pacchetto: -
Azione17.595
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25V
30A (Tc), 40A (Tc)
8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
2.4V @ 250µA
8.9nC @ 4.5V, 11.9nC @ 4.5V
660pF @ 12.5V, 1370pF @ 12.5V
16.7W, 31W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
2SB808F-SPA-ON
onsemi

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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NVMFD6H840NLT1G
onsemi

MOSFET 2N-CH 80V 14A/74A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 96µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
pacchetto: -
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80V
14A (Ta), 74A (Tc)
6.9mOhm @ 20A, 10V
2V @ 96µA
32nC @ 10V
2002pF @ 40V
-
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
SI2429DW-TP
Micro Commercial Co

MOSFET 20V 1.5A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 1A, 4.5V, 150mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.98nC @ 4.5V, 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 202pF @ 10V, 223pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
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20V
1.5A, 1A
90mOhm @ 1A, 4.5V, 150mOhm @ 1A, 4.5V
1V @ 250µA
2.98nC @ 4.5V, 3nC @ 4.5V
202pF @ 10V, 223pF @ 10V
450mW
-55°C ~ 150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
CMS02P02T6-HF
Comchip Technology

MOSFET 2P-CH 20V 2.5A SOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
  • Power - Max: 1.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
pacchetto: -
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20V
2.5A (Tc)
90mOhm @ 2.5A, 4.5V
1V @ 250µA
4.8nC @ 4.5V
350pF @ 15V
1.25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
EPC2110
EPC

GANFET 2N-CH 120V 3.4A DIE

  • FET Type: GaNFET (Gallium Nitride)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Azione43.275
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120V
3.4A
60mOhm @ 4A, 5V
2.5V @ 700µA
0.8nC @ 5V
80pF @ 60V
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-40°C ~ 150°C (TJ)
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Die
Die
NTMFD4C820NAT1G
onsemi

NFET SO8FL 30V 27A 3.4MOH

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 13.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V, 3.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V, 1950pF @ 15V
  • Power - Max: 1.09W (Ta), 1.15W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
pacchetto: -
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30V
9.1A (Ta), 13.7A (Ta)
7.3mOhm @ 10A, 10V, 3.4mOhm @ 20A, 10V
2.1V @ 250µA
19nC @ 10V, 29nC @ 10V
970pF @ 15V, 1950pF @ 15V
1.09W (Ta), 1.15W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)