Pagina 197 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI4834BDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione364.128	Logic Level Gate	30V	5.7A	22 mOhm @ 7.5A, 10V	3V @ 250µA	11nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM100TDU35PG	Microsemi Corporation	MOSFET 6N-CH 1000V 22A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	pacchetto: SP6	Azione3.408	Standard	1000V (1kV)	22A	420 mOhm @ 11A, 10V	5V @ 2.5mA	186nC @ 10V	5200pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
SIF902EDZ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 7A 6-POWERPAK FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 2x5 Supplier Device Package: PowerPAK? (2x5)	pacchetto: PowerPAK? 2x5	Azione65.580	Logic Level Gate	20V	7A	22 mOhm @ 7A, 4.5V	1.5V @ 250µA	14nC @ 4.5V	-	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 2x5	PowerPAK? (2x5)
NTJD4105CT4	ON Semiconductor	MOSFET N/P-CH 20V/8V SOT-363 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V, 8V Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione5.840	Logic Level Gate	20V, 8V	630mA, 775mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
NDS8958	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 5.3A/4A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A, 4A Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione152.184	Logic Level Gate	30V	5.3A, 4A	35 mOhm @ 5.3A, 10V	2.8V @ 250µA	30nC @ 10V	720pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM20AM05FG	Microsemi Corporation	MOSFET 2N-CH 200V 317A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Power - Max: 1136W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	pacchetto: SP6	Azione4.128	Standard	200V	317A	5 mOhm @ 158.5A, 10V	5V @ 10mA	448nC @ 10V	27400pF @ 25V	1136W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM50H10FT3G	Microsemi Corporation	MOSFET 4N-CH 500V 37A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 37A Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V Power - Max: 312W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione5.712	Standard	500V	37A	120 mOhm @ 18.5A, 10V	5V @ 1mA	96nC @ 10V	4367pF @ 25V	312W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SQJ844AEP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 16.6 mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacchetto: PowerPAK? SO-8 Dual	Azione7.600	Standard	30V	8A	16.6 mOhm @ 7.6A, 10V	2.5V @ 250µA	26nC @ 10V	1161pF @ 15V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SP8J5TB	Rohm Semiconductor	MOSFET 2P-CH 30V 7A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione12.420	Logic Level Gate	30V	7A	28 mOhm @ 7A, 10V	2.5V @ 1mA	25nC @ 5V	2600pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IRF7379TRPBF	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione819.072	Standard	30V	5.8A, 4.3A	45 mOhm @ 5.8A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMD8900	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V POWER FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 17A Rds On (Max) @ Id, Vgs: 4 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 15V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Supplier Device Package: 12-Power3.3x5	pacchetto: 12-PowerWDFN	Azione3.568	Standard	30V	19A, 17A	4 mOhm @ 19A, 10V	2.5V @ 250µA	35nC @ 10V	2605pF @ 15V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWDFN	12-Power3.3x5
SSM6P41FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.72A ES6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 720mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	pacchetto: SOT-563, SOT-666	Azione7.456	Logic Level Gate	20V	720mA	300 mOhm @ 400mA, 4.5V	1V @ 1mA	1.76nC @ 4.5V	110pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
SI7942DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 100V 3.8A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacchetto: PowerPAK? SO-8 Dual	Azione146.316	Logic Level Gate	100V	3.8A	49 mOhm @ 5.9A, 10V	4V @ 250µA	24nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
FDS9926A	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 6.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione1.348.608	Logic Level Gate	20V	6.5A	30 mOhm @ 6.5A, 4.5V	1.5V @ 250µA	9nC @ 4.5V	650pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SCX6206TQM-V2-NOPB	Texas Instruments	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMTH4011SPD-13	Diodes Incorporated	MOSFET 2N-CH 40V 11.1A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Power - Max: 2.6W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	pacchetto: -	Azione17.175	-	40V	11.1A (Ta), 42A (Tc)	15mOhm @ 20A, 10V	4V @ 250µA	10.6nC @ 10V	805pF @ 20V	2.6W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
DMN66D0LDWQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 0.217A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 217mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 29.3pF @ 25V Power - Max: 400mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Request a Quote	-	60V	217mA (Ta)	6Ohm @ 115mA, 5V	2V @ 250µA	0.9nC @ 10V	29.3pF @ 25V	400mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BUK9K25-40RAX	Nexperia USA Inc.	MOSFET 2N-CH 40V 18.2A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V Power - Max: 32W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	pacchetto: -	Azione22.485	Logic Level Gate	40V	18.2A (Ta)	24mOhm @ 5A, 10V	2.1V @ 1mA	6.3nC @ 5V	701pF @ 25V	32W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
UPA2790GR-E1-AT	Renesas	MOSFET N/P-CH 30V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 10V, 60mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 460pF @ 10V Power - Max: 1.7W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	pacchetto: -	Request a Quote	-	30V	6A (Ta)	28mOhm @ 3A, 10V, 60mOhm @ 3A, 10V	2.5V @ 1mA	12.6nC @ 10V, 11nC @ 10V	500pF @ 10V, 460pF @ 10V	1.7W (Ta)	150°C	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
DMN2024UVTQ-13	Diodes Incorporated	MOSFET 2N-CH 20V 7A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	pacchetto: -	Request a Quote	-	20V	7A (Ta)	24mOhm @ 6.5A, 4.5V	900mV @ 250µA	7.1nC @ 4.5V	647pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
SIZF360DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 23A 6POWERPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair™ Supplier Device Package: 6-PowerPair™	pacchetto: -	Request a Quote	-	30V	23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)	4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V	2.2V @ 250µA	22nC @ 10V, 62nC @ 10V	1100pF @ 15V, 3150pF @ 15V	3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair™	6-PowerPair™
NVMFD6H846NLWFT1G	onsemi	MOSFET 2N-CH 80V 9.4A/31A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 21µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V Power - Max: 3.2W (Ta), 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	pacchetto: -	Request a Quote	-	80V	9.4A (Ta), 31A (Tc)	15mOhm @ 5A, 10V	2V @ 21µA	17nC @ 10V	900pF @ 40V	3.2W (Ta), 34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
DMN61D9UDWQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 0.318A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 318mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V Power - Max: 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Request a Quote	-	60V	318mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.6nC @ 4.5V	39pF @ 30V	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SP8M6HZGTB	Rohm Semiconductor	MOSFET N/P-CH 30V 5A/3.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: -	Azione7.458	-	30V	5A (Ta), 3.5A (Ta)	51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V	2.5V @ 1mA	3.9nC @ 5V, 5.5nC @ 5V	230pF @ 10V, 490pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MSCSM120AM16CT1AG	Microchip Technology	SIC 2N-CH 1200V 173A SP1F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 745W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP1F	pacchetto: -	Request a Quote	-	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP1F
SIZF300DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 23A 8POWERPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	pacchetto: -	Azione8.478	-	30V	23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)	4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V	2.2V @ 250µA	22nC @ 10V, 62nC @ 10V	1100pF @ 15V, 3150pF @ 15V	3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
DMT3020LDT-7	Diodes Incorporated	MOSFET 2N-CH 30V 8.5A 8VDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Power - Max: 670mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: V-DFN3030-8 (Type K)	pacchetto: -	Request a Quote	-	30V	8.5A (Tc)	20mOhm @ 6A, 10V	2.5V @ 250µA	7nC @ 10V	393pF @ 15V	670mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	V-DFN3030-8 (Type K)
SI6913DQ-T1-BE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.9A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 400µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: -	Azione27.000	-	12V	4.9A (Ta)	21mOhm @ 5.8A, 4.5V	900mV @ 400µA	28nC @ 4.5V	-	830mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP

SI4834BDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione364.128

Logic Level Gate

30V

5.7A

22 mOhm @ 7.5A, 10V

3V @ 250µA

11nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM100TDU35PG

Microsemi Corporation

MOSFET 6N-CH 1000V 22A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

pacchetto: SP6

Azione3.408

Standard

1000V (1kV)

22A

420 mOhm @ 11A, 10V

5V @ 2.5mA

186nC @ 10V

5200pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

SIF902EDZ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 7A 6-POWERPAK

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 2x5
Supplier Device Package: PowerPAK? (2x5)

pacchetto: PowerPAK? 2x5

Azione65.580

Logic Level Gate

20V

7A

22 mOhm @ 7A, 4.5V

1.5V @ 250µA

14nC @ 4.5V

-

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 2x5

PowerPAK? (2x5)

NTJD4105CT4

ON Semiconductor

MOSFET N/P-CH 20V/8V SOT-363

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V, 8V
Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione5.840

Logic Level Gate

20V, 8V

630mA, 775mA

375 mOhm @ 630mA, 4.5V

1.5V @ 250µA

3nC @ 4.5V

46pF @ 20V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

NDS8958

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 5.3A/4A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 4A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione152.184

Logic Level Gate

30V

5.3A, 4A

35 mOhm @ 5.3A, 10V

2.8V @ 250µA

30nC @ 10V

720pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM20AM05FG

Microsemi Corporation

MOSFET 2N-CH 200V 317A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Power - Max: 1136W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

pacchetto: SP6

Azione4.128

Standard

200V

317A

5 mOhm @ 158.5A, 10V

5V @ 10mA

448nC @ 10V

27400pF @ 25V

1136W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM50H10FT3G

Microsemi Corporation

MOSFET 4N-CH 500V 37A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 37A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V
Power - Max: 312W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione5.712

Standard

500V

37A

120 mOhm @ 18.5A, 10V

5V @ 1mA

96nC @ 10V

4367pF @ 25V

312W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

SQJ844AEP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16.6 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacchetto: PowerPAK? SO-8 Dual

Azione7.600

Standard

30V

8A

16.6 mOhm @ 7.6A, 10V

2.5V @ 250µA

26nC @ 10V

1161pF @ 15V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SP8J5TB

Rohm Semiconductor

MOSFET 2P-CH 30V 7A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione12.420

Logic Level Gate

30V

7A

28 mOhm @ 7A, 10V

2.5V @ 1mA

25nC @ 5V

2600pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IRF7379TRPBF

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione819.072

Standard

30V

5.8A, 4.3A

45 mOhm @ 5.8A, 10V

1V @ 250µA

25nC @ 10V

520pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMD8900

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V POWER

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A, 17A
Rds On (Max) @ Id, Vgs: 4 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 15V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Supplier Device Package: 12-Power3.3x5

pacchetto: 12-PowerWDFN

Azione3.568

Standard

30V

19A, 17A

4 mOhm @ 19A, 10V

2.5V @ 250µA

35nC @ 10V

2605pF @ 15V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWDFN

12-Power3.3x5

SSM6P41FE(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.72A ES6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

pacchetto: SOT-563, SOT-666

Azione7.456

Logic Level Gate

20V

720mA

300 mOhm @ 400mA, 4.5V

1V @ 1mA

1.76nC @ 4.5V

110pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6 (1.6x1.6)

SI7942DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 100V 3.8A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacchetto: PowerPAK? SO-8 Dual

Azione146.316

Logic Level Gate

100V

3.8A

49 mOhm @ 5.9A, 10V

4V @ 250µA

24nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

FDS9926A

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione1.348.608

Logic Level Gate

20V

6.5A

30 mOhm @ 6.5A, 4.5V

1.5V @ 250µA

9nC @ 4.5V

650pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SCX6206TQM-V2-NOPB

Texas Instruments

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

DMTH4011SPD-13

Diodes Incorporated

MOSFET 2N-CH 40V 11.1A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Power - Max: 2.6W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

pacchetto: -

Azione17.175

-

40V

11.1A (Ta), 42A (Tc)

15mOhm @ 20A, 10V

4V @ 250µA

10.6nC @ 10V

805pF @ 20V

2.6W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

DMN66D0LDWQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 0.217A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 217mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 29.3pF @ 25V
Power - Max: 400mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

Request a Quote

-

60V

217mA (Ta)

6Ohm @ 115mA, 5V

2V @ 250µA

0.9nC @ 10V

29.3pF @ 25V

400mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BUK9K25-40RAX

Nexperia USA Inc.

MOSFET 2N-CH 40V 18.2A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Power - Max: 32W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

pacchetto: -

Azione22.485

Logic Level Gate

40V

18.2A (Ta)

24mOhm @ 5A, 10V

2.1V @ 1mA

6.3nC @ 5V

701pF @ 25V

32W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

UPA2790GR-E1-AT

Renesas

MOSFET N/P-CH 30V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 10V, 60mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 460pF @ 10V
Power - Max: 1.7W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

pacchetto: -

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-

30V

6A (Ta)

28mOhm @ 3A, 10V, 60mOhm @ 3A, 10V

2.5V @ 1mA

12.6nC @ 10V, 11nC @ 10V

500pF @ 10V, 460pF @ 10V

1.7W (Ta)

150°C

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

DMN2024UVTQ-13

Diodes Incorporated

MOSFET 2N-CH 20V 7A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

pacchetto: -

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-

20V

7A (Ta)

24mOhm @ 6.5A, 4.5V

900mV @ 250µA

7.1nC @ 4.5V

647pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

SIZF360DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 23A 6POWERPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™

pacchetto: -

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-

30V

23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)

4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V

2.2V @ 250µA

22nC @ 10V, 62nC @ 10V

1100pF @ 15V, 3150pF @ 15V

3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair™

NVMFD6H846NLWFT1G

onsemi

MOSFET 2N-CH 80V 9.4A/31A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Power - Max: 3.2W (Ta), 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

pacchetto: -

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80V

9.4A (Ta), 31A (Tc)

15mOhm @ 5A, 10V

2V @ 21µA

17nC @ 10V

900pF @ 40V

3.2W (Ta), 34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

DMN61D9UDWQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 0.318A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
Power - Max: 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

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60V

318mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.6nC @ 4.5V

39pF @ 30V

370mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SP8M6HZGTB

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/3.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: -

Azione7.458

-

30V

5A (Ta), 3.5A (Ta)

51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V

2.5V @ 1mA

3.9nC @ 5V, 5.5nC @ 5V

230pF @ 10V, 490pF @ 10V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

MSCSM120AM16CT1AG

Microchip Technology

SIC 2N-CH 1200V 173A SP1F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP1F

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-

1200V (1.2kV)

173A (Tc)

16mOhm @ 80A, 20V

2.8V @ 2mA

464nC @ 20V

6040pF @ 1000V

745W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP1F

SIZF300DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 23A 8POWERPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

pacchetto: -

Azione8.478

-

30V

23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)

4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V

2.2V @ 250µA

22nC @ 10V, 62nC @ 10V

1100pF @ 15V, 3150pF @ 15V

3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

DMT3020LDT-7

Diodes Incorporated

MOSFET 2N-CH 30V 8.5A 8VDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Power - Max: 670mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: V-DFN3030-8 (Type K)

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30V

8.5A (Tc)

20mOhm @ 6A, 10V

2.5V @ 250µA

7nC @ 10V

393pF @ 15V

670mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

V-DFN3030-8 (Type K)

SI6913DQ-T1-BE3

Vishay Siliconix

MOSFET 2P-CH 12V 4.9A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: -

Azione27.000

-

12V

4.9A (Ta)

21mOhm @ 5.8A, 4.5V

900mV @ 400µA

28nC @ 4.5V

-

830mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP