Pagina 163 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  163/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7910PBF
Infineon Technologies

MOSFET 2N-CH 12V 10A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.128
Logic Level Gate
12V
10A
15 mOhm @ 8A, 4.5V
2V @ 250µA
26nC @ 4.5V
1730pF @ 6V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AO8801L
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 4.7 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: 8-TSSOP
pacchetto: -
Azione6.848
Standard
20V
4.7A (Ta)
42 mOhm @ 4.7A, 4.5V
1V @ 250µA
17.2nC @ 10V
1450pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
-
8-TSSOP
SI6924AEDQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 28V 4.1A 8-TSSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 28V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione5.664
Logic Level Gate
28V
4.1A
33 mOhm @ 4.6A, 4.5V
1.5V @ 250µA
10nC @ 4.5V
-
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot NTUD3127CT5G
ON Semiconductor

MOSFET N/P-CH 20V SOT-963

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
  • Power - Max: 125mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
pacchetto: SOT-963
Azione181.152
Logic Level Gate
20V
160mA, 140mA
3 Ohm @ 100mA, 4.5V
1V @ 250µA
-
9pF @ 15V
125mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
VMM1000-01P
IXYS

MOSFET 2N-CH 100V 1000A Y3-LI

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1000A
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 800A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 2355nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y3-Li
  • Supplier Device Package: Y3-Li
pacchetto: Y3-Li
Azione6.576
Standard
100V
1000A
1.2 Ohm @ 800A, 10V
4V @ 10mA
2355nC @ 10V
-
-
-40°C ~ 175°C (TJ)
Chassis Mount
Y3-Li
Y3-Li
hot HAT2092R-EL-E
Renesas Electronics America

MOSFET 2N-CH 30V 11A 8-SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.367.508
Logic Level Gate
30V
11A
16 mOhm @ 5.5A, 10V
2.5V @ 1mA
22nC @ 10V
1400pF @ 10V
3W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot STC6NF30V
STMicroelectronics

MOSFET 2N-CH 30V 6A 8-TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione29.856
Logic Level Gate
30V
6A
25 mOhm @ 3A, 4.5V
600mV @ 250µA
9nC @ 2.5V
800pF @ 25V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IPG20N06S4L11ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 28µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
  • Power - Max: 65W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
pacchetto: 8-PowerVDFN
Azione7.744
Logic Level Gate
60V
20A
11.2 mOhm @ 17A, 10V
2.2V @ 28µA
53nC @ 10V
4020pF @ 25V
65W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
FMM75-01F
IXYS

MOSFET 2N-CH 100V 75A I4-PAC-5

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
pacchetto: i4-Pac?-5
Azione7.920
Standard
100V
75A
25 mOhm @ 50A, 10V
4V @ 4mA
180nC @ 10V
-
-
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
ALD210804SCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione4.960
Logic Level Gate
10.6V
80mA
-
20mV @ 10µA
-
-
500mW
0°C ~ 70°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
ALD111933MAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8MSOP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.9V
  • Vgs(th) (Max) @ Id: 3.35V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione5.440
Standard
10.6V
-
500 Ohm @ 5.9V
3.35V @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
DMG1026UVQ-7
Diodes Incorporated

MOSFET BVDSS: 41V 60V SOT563 T&R

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.45pC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
  • Power - Max: 650mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione3.856
Logic Level Gate
60V
440mA (Ta)
1.8 Ohm @ 500mA, 10V
1.8V @ 250µA
0.45pC @ 4.5V
32pF @ 25V
650mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
FF11MR12W1M1B11BOMA1
Infineon Technologies Industrial Power and Controls Americas

MOSFET MODULE HALF 1200V 100A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 100A
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 100A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 7950pF @ 800V
  • Power - Max: 20mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: Module
Azione3.504
Standard
1200V (1.2kV)
100A
11 mOhm @ 100A, 15V
5.55V @ 40mA
250nC @ 15V
7950pF @ 800V
20mW
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
US6M11TR
Rohm Semiconductor

MOSFET N/P-CH 20V/12V TUMT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V, 12V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione5.200
Logic Level Gate
20V, 12V
1.5A, 1.3A
180 mOhm @ 1.5A, 4.5V
1V @ 1mA
1.8nC @ 4.5V
110pF @ 10V
1W
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
DN2625DK6-G
Microchip Technology

MOSFET 2N-CH 250V 1.1A 8VDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Depletion Mode
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (5x5)
pacchetto: 8-VDFN Exposed Pad
Azione17.076
Depletion Mode
250V
1.1A
3.5 Ohm @ 1A, 0V
-
7.04nC @ 1.5V
1000pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (5x5)
ALD1116SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione16.416
Standard
10.6V
-
500 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot FDS8928A
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V/20V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 4A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione618.024
Logic Level Gate
30V, 20V
5.5A, 4A
30 mOhm @ 5.5A, 4.5V
1V @ 250µA
28nC @ 4.5V
900pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SIA906EDJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
pacchetto: PowerPAK? SC-70-6 Dual
Azione484.956
Logic Level Gate
20V
4.5A
46 mOhm @ 3.9A, 4.5V
1.4V @ 250µA
12nC @ 10V
350pF @ 10V
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
NX6020CAKSAX
Nexperia USA Inc.

MOSFET N/P-CH 60V 0.17A 6TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V, 50V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), 160mA (Ta)
  • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V, 7.5Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V, 0.35nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V, 36pF @ 25V
  • Power - Max: 220mW, 280mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: -
Request a Quote
-
60V, 50V
170mA (Ta), 160mA (Ta)
4.5Ohm @ 100mA, 10V, 7.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.43nC @ 4.5V, 0.35nC @ 5V
17pF @ 10V, 36pF @ 25V
220mW, 280mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
PJS6801_S1_00001
Panjit International Inc.

MOSFET 2P-CH 30V 3.2A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 74mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 15V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacchetto: -
Azione2.052
-
30V
3.2A (Ta)
74mOhm @ 3.2A, 10V
1.3V @ 250µA
15nC @ 10V
633pF @ 15V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
MMDF1N05ER2
onsemi

MOSFET 2N-CH 50V 2A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
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Logic Level Gate
50V
2A
300mOhm @ 1.5A, 10V
3V @ 250µA
12.5nC @ 10V
330pF @ 25V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
RMD0A8P20ES9
Rectron USA

MOSFET 2P-CH 20V 0.8A SOT363-6L

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.0018C @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V
  • Power - Max: 800mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363-6L
pacchetto: -
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-
20V
800mA (Ta)
1.2Ohm @ 500mA, 4.5V
1V @ 250µA
0.0018C @ 4.5V
87pF @ 10V
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363-6L
UPA2754GR-E2-A
Renesas Electronics Corporation

MOSFET 2N-CH 30V 11A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-PSOP
pacchetto: -
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Logic Level Gate
30V
11A
14.5mOhm @ 5.5A, 4.5V
1.5V @ 1mA
25nC @ 4.5V
1940pF @ 10V
2W
-
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-PSOP
FBG20N04AC
EPC Space, LLC

MOSFET 200V 4A 4SMD

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: 4-SMD
pacchetto: -
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Logic Level Gate
200V
4A (Tc)
130mOhm @ 4A, 5V
2.8V @ 1mA
3nC @ 5V
150pF @ 100V
-
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, No Lead
4-SMD
MCM2301-TP
Micro Commercial Co

MOSFET 2P-CH 20V 3.8A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: DFN2020-6L
pacchetto: -
Azione66.270
-
20V
3.8A
70mOhm @ 1.9A, 4.5V
900mV @ 250µA
14.5nC @ 4.5V
880pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
DFN2020-6L
HUFA76407DK8TF085P
onsemi

MOSFET 2N-CH 60V 3.8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power - Max: 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
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Logic Level Gate
60V
3.8A (Ta)
90mOhm @ 3.8A, 10V
3V @ 250µA
-
330pF @ 25V
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMN33D9LV-13
Diodes Incorporated

MOSFET 2N-CH 30V 0.35A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
  • Power - Max: 430mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Azione30.000
-
30V
350mA (Ta)
2.4Ohm @ 250mA, 10V
1.4V @ 100µA
1.23nC @ 10V
48pF @ 5V
430mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
SSM6N24TU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.5A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
pacchetto: -
Azione7.695
-
30V
500mA (Ta)
145mOhm @ 500mA, 4.5V
1.1V @ 100µA
-
245pF @ 10V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6