Pagina 127 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO4828L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 60V 4.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione10.716	Logic Level Gate	60V	-	56 mOhm @ 4.5A, 10V	3V @ 250µA	10.5nC @ 10V	540pF @ 30V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AOP609	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 60V 8DIP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 30V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	pacchetto: 8-DIP (0.300", 7.62mm)	Azione2.325.840	Logic Level Gate	60V	-	60 mOhm @ 4.7A, 10V	3V @ 250µA	7nC @ 10V	570pF @ 30V	2.5W	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
APTC60HM45T1G	Microsemi Corporation	MOSFET 4N-CH 600V 49A SP1 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	pacchetto: SP1	Azione5.232	Standard	600V	49A	45 mOhm @ 24.5A, 10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
ALD110808SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V Vgs(th) (Max) @ Id: 820mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	pacchetto: 16-SOIC (0.154", 3.90mm Width)	Azione6.704	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.8V	820mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
SH8K12TB1	Rohm Semiconductor	MOSFET 2N-CH 30V 5A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione25.248	Logic Level Gate	30V	5A	42 mOhm @ 5A, 10V	2.5V @ 1mA	4nC @ 5V	250pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ALD110808APCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V Vgs(th) (Max) @ Id: 810mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	pacchetto: 16-DIP (0.300", 7.62mm)	Azione3.872	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.8V	810mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SIZ916DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16A POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 40A Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V Power - Max: 22.7W, 100W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	pacchetto: 6-PowerPair?	Azione3.648	Standard	30V	16A, 40A	6.4 mOhm @ 19A, 10V	2.4V @ 250µA	26nC @ 10V	1208pF @ 15V	22.7W, 100W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
FDS6912A	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione548.340	Logic Level Gate	30V	6A	28 mOhm @ 6A, 10V	3V @ 250µA	8.1nC @ 5V	575pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ570EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY N/P-CH 100V SO8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V Power - Max: 27W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacchetto: PowerPAK? SO-8 Dual	Azione6.976	Standard	100V	15A (Tc), 9.5A (Tc)	45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V	2.5V @ 250µA	20nC @ 10V, 15nC @ 10V	650pF @ 25V, 600pF @ 25V	27W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
AO4886	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 100V 3.3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 942pF @ 50V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione22.650	Logic Level Gate	100V	3.3A	80 mOhm @ 3A, 10V	2.7V @ 250µA	20nC @ 10V	942pF @ 50V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
BUK7K18-40EX	Nexperia USA Inc.	MOSFET 2N-CH 40V 24.2A LFPAK FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24.2A Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V Power - Max: 38W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	pacchetto: SOT-1205, 8-LFPAK56	Azione12.744	Standard	40V	24.2A	19 mOhm @ 10A, 10V	4V @ 1mA	11.8nC @ 10V	808pF @ 25V	38W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
PHP225,118	Nexperia USA Inc.	MOSFET 2P-CH 30V 2.3A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione50.442	Logic Level Gate	30V	2.3A	250 mOhm @ 1A, 10V	2.8V @ 1mA	25nC @ 10V	250pF @ 20V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1965DH-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 1.3A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione147.012	Logic Level Gate	12V	1.3A	390 mOhm @ 1A, 4.5V	1V @ 250µA	4.2nC @ 8V	120pF @ 6V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI4922BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione518.976	Standard	30V	8A	16 mOhm @ 5A, 10V	1.8V @ 250µA	62nC @ 10V	2070pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
TSM250NB06LDCR	Taiwan Semiconductor Corporation	MOSFET 2N-CH 60V 6A/29A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V Power - Max: 2W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	pacchetto: -	Request a Quote	-	60V	6A (Ta), 29A (Tc)	25mOhm @ 6A, 10V	2.5V @ 250µA	23nC @ 10V	1314pF @ 30V	2W (Ta), 48W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFN (5x6)
DMN16M9UCA6-7	Diodes Incorporated	MOSFET 2N-CH X3-DSN2718-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Power - Max: 2.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN2718-6	pacchetto: -	Request a Quote	-	-	-	-	1.3V @ 1mA	35.2nC @ 4.5V	2360pF @ 6V	2.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X3-DSN2718-6
DMN3732UVT-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	pacchetto: -	Request a Quote	-	30V	1.1A (Ta)	460mOhm @ 200mA, 4.5V	0.95V @ 250µA	0.9nC @ 10V	40.8pF @ 25V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
GSFB0205	Good-Ark Semiconductor	MOSFET 2P-CH 20V 4A 6PPAK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-PPAK (2x2)	pacchetto: -	Azione18.000	-	20V	4A (Ta)	49mOhm @ 1.5A, 4.5V	1V @ 250µA	9nC @ 4.5V	810pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-PPAK (2x2)
SQJB04ELP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	pacchetto: -	Azione70.419	-	40V	30A (Tc)	11mOhm @ 5A, 10V	2.2V @ 250µA	20nC @ 10V	1055pF @ 25V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
GCMX005A120S7B1	SemiQ	SIC 1200V 5M MOSFET HALF-BRIDGE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 348A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 4V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 978nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 800V Power - Max: 1.042kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1200V (1.2kV)	348A (Tc)	7mOhm @ 200A, 20V	4V @ 80mA	978nC @ 20V	29300pF @ 800V	1.042kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
AOCA24106C	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 20A 6ALPHADFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-AlphaDFN (1.9x1.6)	pacchetto: -	Azione24.000	-	12V	20A (Ta)	5.6mOhm @ 4A, 4.5V	1.1V @ 250µA	16nC @ 4.5V	-	2.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	6-AlphaDFN (1.9x1.6)
MSCSM120DDUM31CTBL2NG	Microchip Technology	SIC 4N-CH 1200V 79A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 310W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1200V (1.2kV)	79A	31mOhm @ 40A, 20V	2.8V @ 1mA	232nC @ 20V	3020pF @ 1000V	310W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
PJQ2800_R1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 5.2A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 10V Power - Max: 1.45W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: DFN2020-6L	pacchetto: -	Azione9.000	-	20V	5.2A (Ta)	32mOhm @ 5.2A, 4.5V	900mV @ 250µA	6.3nC @ 4.5V	515pF @ 10V	1.45W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	DFN2020-6L
BUK9K52-60RAX	Nexperia USA Inc.	MOSFET 2N-CH 60V 16A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V Power - Max: 32W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	pacchetto: -	Azione7.314	Logic Level Gate	60V	16A (Ta)	49mOhm @ 5A, 10V	2.1V @ 1mA	5.6nC @ 5V	725pF @ 25V	32W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
GSFQ6806	Good-Ark Semiconductor	MOSFET 2N-CH 60V 20A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V Power - Max: 2.1W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: -	Azione17.673	-	60V	20A (Tc)	28mOhm @ 20A, 10V	2.5V @ 250µA	42nC @ 10V	2440pF @ 20V	2.1W (Tc)	-50°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IPG20N04S409AATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 22µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 54W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	pacchetto: -	Azione15.000	-	40V	20A (Tc)	8.6mOhm @ 17A, 10V	4V @ 22µA	28nC @ 10V	2250pF @ 25V	54W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
DMN62D2UDMQ-7	Diodes Incorporated	2N7002 FAMILY SOT26 T&R 3K FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	pacchetto: -	Request a Quote	-	60V	440mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
UPA610TA-T1-A	Renesas Electronics Corporation	MOSFET 2P-CH 30V 0.1A SC74-6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 13Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 3V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SC-74-6, (Mini Mold)	pacchetto: -	Request a Quote	Logic Level Gate	30V	100mA	13Ohm @ 10mA, 10V	-	-	5pF @ 3V	300mW	150°C (TJ)	Surface Mount	SC-74, SOT-457	SC-74-6, (Mini Mold)

AO4828L

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 60V 4.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione10.716

Logic Level Gate

60V

-

56 mOhm @ 4.5A, 10V

3V @ 250µA

10.5nC @ 10V

540pF @ 30V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AOP609

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 60V 8DIP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 30V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

pacchetto: 8-DIP (0.300", 7.62mm)

Azione2.325.840

Logic Level Gate

60V

-

60 mOhm @ 4.7A, 10V

3V @ 250µA

7nC @ 10V

570pF @ 30V

2.5W

-55°C ~ 150°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

APTC60HM45T1G

Microsemi Corporation

MOSFET 4N-CH 600V 49A SP1

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

pacchetto: SP1

Azione5.232

Standard

600V

49A

45 mOhm @ 24.5A, 10V

3.9V @ 3mA

150nC @ 10V

7200pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

ALD110808SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.154", 3.90mm Width)

Azione6.704

Standard

10.6V

12mA, 3mA

500 Ohm @ 4.8V

820mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

SH8K12TB1

Rohm Semiconductor

MOSFET 2N-CH 30V 5A 8SOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione25.248

Logic Level Gate

30V

5A

42 mOhm @ 5A, 10V

2.5V @ 1mA

4nC @ 5V

250pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

ALD110808APCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

pacchetto: 16-DIP (0.300", 7.62mm)

Azione3.872

Standard

10.6V

12mA, 3mA

500 Ohm @ 4.8V

810mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

SIZ916DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 16A POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Power - Max: 22.7W, 100W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

pacchetto: 6-PowerPair?

Azione3.648

Standard

30V

16A, 40A

6.4 mOhm @ 19A, 10V

2.4V @ 250µA

26nC @ 10V

1208pF @ 15V

22.7W, 100W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

FDS6912A

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione548.340

Logic Level Gate

30V

6A

28 mOhm @ 6A, 10V

3V @ 250µA

8.1nC @ 5V

575pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQJ570EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY N/P-CH 100V SO8

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacchetto: PowerPAK? SO-8 Dual

Azione6.976

Standard

100V

15A (Tc), 9.5A (Tc)

45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V

2.5V @ 250µA

20nC @ 10V, 15nC @ 10V

650pF @ 25V, 600pF @ 25V

27W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

AO4886

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 100V 3.3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 942pF @ 50V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione22.650

Logic Level Gate

100V

3.3A

80 mOhm @ 3A, 10V

2.7V @ 250µA

20nC @ 10V

942pF @ 50V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

BUK7K18-40EX

Nexperia USA Inc.

MOSFET 2N-CH 40V 24.2A LFPAK

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Power - Max: 38W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

pacchetto: SOT-1205, 8-LFPAK56

Azione12.744

Standard

40V

24.2A

19 mOhm @ 10A, 10V

4V @ 1mA

11.8nC @ 10V

808pF @ 25V

38W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

PHP225,118

Nexperia USA Inc.

MOSFET 2P-CH 30V 2.3A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione50.442

Logic Level Gate

30V

2.3A

250 mOhm @ 1A, 10V

2.8V @ 1mA

25nC @ 10V

250pF @ 20V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1965DH-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione147.012

Logic Level Gate

12V

1.3A

390 mOhm @ 1A, 4.5V

1V @ 250µA

4.2nC @ 8V

120pF @ 6V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI4922BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione518.976

Standard

30V

8A

16 mOhm @ 5A, 10V

1.8V @ 250µA

62nC @ 10V

2070pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

TSM250NB06LDCR

Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 6A/29A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Power - Max: 2W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)

pacchetto: -

Request a Quote

-

60V

6A (Ta), 29A (Tc)

25mOhm @ 6A, 10V

2.5V @ 250µA

23nC @ 10V

1314pF @ 30V

2W (Ta), 48W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFN (5x6)

DMN16M9UCA6-7

Diodes Incorporated

MOSFET 2N-CH X3-DSN2718-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X3-DSN2718-6

pacchetto: -

Request a Quote

-

1.3V @ 1mA

35.2nC @ 4.5V

2360pF @ 6V

2.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X3-DSN2718-6

DMN3732UVT-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

pacchetto: -

Request a Quote

-

30V

1.1A (Ta)

460mOhm @ 200mA, 4.5V

0.95V @ 250µA

0.9nC @ 10V

40.8pF @ 25V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

GSFB0205

Good-Ark Semiconductor

MOSFET 2P-CH 20V 4A 6PPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-PPAK (2x2)

pacchetto: -

Azione18.000

-

20V

4A (Ta)

49mOhm @ 1.5A, 4.5V

1V @ 250µA

9nC @ 4.5V

810pF @ 10V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-PPAK (2x2)

SQJB04ELP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

pacchetto: -

Azione70.419

-

40V

30A (Tc)

11mOhm @ 5A, 10V

2.2V @ 250µA

20nC @ 10V

1055pF @ 25V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

GCMX005A120S7B1

SemiQ

SIC 1200V 5M MOSFET HALF-BRIDGE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 348A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 200A, 20V
Vgs(th) (Max) @ Id: 4V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 978nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 800V
Power - Max: 1.042kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

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-

1200V (1.2kV)

348A (Tc)

7mOhm @ 200A, 20V

4V @ 80mA

978nC @ 20V

29300pF @ 800V

1.042kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

AOCA24106C

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 20A 6ALPHADFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.7W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-AlphaDFN (1.9x1.6)

pacchetto: -

Azione24.000

-

12V

20A (Ta)

5.6mOhm @ 4A, 4.5V

1.1V @ 250µA

16nC @ 4.5V

-

2.7W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

6-AlphaDFN (1.9x1.6)

MSCSM120DDUM31CTBL2NG

Microchip Technology

SIC 4N-CH 1200V 79A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 310W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

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-

1200V (1.2kV)

79A

31mOhm @ 40A, 20V

2.8V @ 1mA

232nC @ 20V

3020pF @ 1000V

310W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

PJQ2800_R1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 5.2A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 10V
Power - Max: 1.45W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: DFN2020-6L

pacchetto: -

Azione9.000

-

20V

5.2A (Ta)

32mOhm @ 5.2A, 4.5V

900mV @ 250µA

6.3nC @ 4.5V

515pF @ 10V

1.45W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

DFN2020-6L

BUK9K52-60RAX

Nexperia USA Inc.

MOSFET 2N-CH 60V 16A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
Power - Max: 32W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

pacchetto: -

Azione7.314

Logic Level Gate

60V

16A (Ta)

49mOhm @ 5A, 10V

2.1V @ 1mA

5.6nC @ 5V

725pF @ 25V

32W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

GSFQ6806

Good-Ark Semiconductor

MOSFET 2N-CH 60V 20A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Power - Max: 2.1W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: -

Azione17.673

-

60V

20A (Tc)

28mOhm @ 20A, 10V

2.5V @ 250µA

42nC @ 10V

2440pF @ 20V

2.1W (Tc)

-50°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IPG20N04S409AATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power - Max: 54W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

pacchetto: -

Azione15.000

-

40V

20A (Tc)

8.6mOhm @ 17A, 10V

4V @ 22µA

28nC @ 10V

2250pF @ 25V

54W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

DMN62D2UDMQ-7

Diodes Incorporated

2N7002 FAMILY SOT26 T&R 3K

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

pacchetto: -

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-

60V

440mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

UPA610TA-T1-A

Renesas Electronics Corporation

MOSFET 2P-CH 30V 0.1A SC74-6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 13Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 3V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74-6, (Mini Mold)

pacchetto: -

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Logic Level Gate

30V

100mA

13Ohm @ 10mA, 10V

-

5pF @ 3V

300mW

150°C (TJ)

Surface Mount

SC-74, SOT-457

SC-74-6, (Mini Mold)