Pagina 108 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JAN2N7334	Microsemi Corporation	MOSFET 4N-CH 100V 1A MO-036AB FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	pacchetto: 14-DIP (0.300", 7.62mm)	Azione3.328	Standard	100V	1A	700 mOhm @ 600mA, 10V	4V @ 250µA	60nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	MO-036AB
MMDF3N04HDR2G	ON Semiconductor	MOSFET 2N-CH 40V 3.4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Power - Max: 1.39W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione1.169.340	Logic Level Gate	40V	3.4A	80 mOhm @ 3.4A, 10V	3V @ 250µA	28nC @ 10V	900pF @ 32V	1.39W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTJD4152PT1	ON Semiconductor	MOSFET 2P-CH 20V 0.88A SOT-363 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Power - Max: 272mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione55.020	Logic Level Gate	20V	880mA	260 mOhm @ 880mA, 4.5V	1.2V @ 250µA	2.2nC @ 4.5V	155pF @ 20V	272mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
STS4DNF60	STMicroelectronics	MOSFET 2N-CH 60V 4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione6.272	Logic Level Gate	60V	4A	90 mOhm @ 2A, 10V	4V @ 250µA	10nC @ 10V	315pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTC60DDAM45T1G	Microsemi Corporation	MOSFET 2N-CH 600V 49A SP1 FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	pacchetto: SP1	Azione7.760	Super Junction	600V	49A	45 mOhm @ 24.5A, 10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
SMA5127	Sanken	MOSFET 3N/3P-CH 60V 4A 12-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 550 Ohm @ 2A, 4V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Power - Max: 4W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	pacchetto: 12-SIP, Exposed Tab	Azione75.840	Standard	60V	4A	550 Ohm @ 2A, 4V	2V @ 250µA	-	150pF @ 10V	4W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
SI4914BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8.4A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.7W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione1.539.588	Standard	30V	8.4A, 8A	21 mOhm @ 8A, 10V	2.7V @ 250µA	10.5nC @ 4.5V	-	2.7W, 3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AON6996	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 50A/60A DFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A, 60A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (5x6)	pacchetto: 8-PowerSMD, Flat Leads	Azione2.112	Standard	30V	50A, 60A	5.2 mOhm @ 20A, 10V	2.2V @ 250µA	13nC @ 10V	820pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (5x6)
QS8J2TR	Rohm Semiconductor	MOSFET 2P-CH 12V 4A TSMT8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V Power - Max: 550mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	pacchetto: 8-SMD, Flat Lead	Azione5.552	Logic Level Gate, 1.5V Drive	12V	4A	36 mOhm @ 4A, 4.5V	1V @ 1mA	20nC @ 4.5V	1940pF @ 6V	550mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
FDS4897AC	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 6.1A/5.2A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione12.828	Logic Level Gate	40V	6.1A, 5.2A	26 mOhm @ 6.1A, 10V	3V @ 250µA	21nC @ 10V	1055pF @ 20V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMP6A16DN8QTA	Diodes Incorporated	MOSFET 2P-CH 60V 2.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V Power - Max: 1.81W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione11.412	Logic Level Gate	60V	2.9A	85 mOhm @ 2.9A, 10V	1V @ 250µA (Min)	24.2nC @ 10V	1021pF @ 30V	1.81W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7304	Infineon Technologies	MOSFET 2P-CH 20V 4.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione15.444	Logic Level Gate	20V	4.3A	90 mOhm @ 2.2A, 4.5V	700mV @ 250µA	22nC @ 4.5V	610pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMCXB1000UEZ	Nexperia USA Inc.	MOSFET ARRAY N/PCH 30V DFN1010B6 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta) Rds On (Max) @ Id, Vgs: 670 mOhm @ 590mA, 4.5V, 1.4 Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V Power - Max: 285mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	pacchetto: 6-XFDFN Exposed Pad	Azione6.240	Standard	30V	590mA (Ta), 410mA (Ta)	670 mOhm @ 590mA, 4.5V, 1.4 Ohm @ 410mA, 4.5V	950mV @ 250µA	1.05nC @ 4.5V, 1.2nC @ 4.5V	30.3pF @ 15V, 43.2pF @ 15V	285mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
NTMFD4C85NT1G	ON Semiconductor	MOSFET 2N-CH 30V 8DFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V Power - Max: 1.13W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6)	pacchetto: 8-PowerTDFN	Azione7.904	Standard	30V	15.4A, 29.7A	3 mOhm @ 20A, 10V	2.1V @ 250µA	32nC @ 10V	1960pF @ 15V	1.13W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6)
FDPC8014S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 8PWRCLIP FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A, 41A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	pacchetto: 8-PowerWDFN	Azione3.456	Logic Level Gate	25V	20A, 41A	3.8 mOhm @ 20A, 10V	2.5V @ 250µA	35nC @ 10V	2375pF @ 13V	2.1W, 2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power Clip 56
NTMD4820NR2G	ON Semiconductor	MOSFET 2N-CH 30V 4.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V Power - Max: 750mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione1.300.728	Logic Level Gate	30V	4.9A	20 mOhm @ 7.5A, 10V	3V @ 250µA	7.7nC @ 4.5V	940pF @ 15V	750mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CMLDM7003G TR	Central Semiconductor Corp	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: SOT-563, SOT-666	Azione4.992	Standard	50V	280mA	2 Ohm @ 50mA, 5V	1V @ 250µA	0.76nC @ 4.5V	50pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN2050LFDB-7	Diodes Incorporated	MOSFET 2N-CH 20V 3.3A 6UDFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V Power - Max: 730mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	pacchetto: 6-UDFN Exposed Pad	Azione3.776	Logic Level Gate	20V	3.3A	45 mOhm @ 5A, 4.5V	1V @ 250µA	12nC @ 10V	389pF @ 10V	730mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
EM5K5T2R	Rohm Semiconductor	MOSFET 2N-CH 30V 0.3A EMT5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 600 mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 150mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	pacchetto: 6-SMD (5 Leads), Flat Lead	Azione94.290	Standard	30V	300mA	600 mOhm @ 300mA, 4.5V	-	-	-	150mW	-	Surface Mount	6-SMD (5 Leads), Flat Lead	EMT5
DMHC4035LSD-13	Diodes Incorporated	MOSFET 2N/2P-CH 40V 8-SOIC FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.7A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione20.304	Logic Level Gate	40V	4.5A, 3.7A	45 mOhm @ 3.9A, 10V	3V @ 250µA	12.5nC @ 10V	574pF @ 20V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIZ348DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 18A/30A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power - Max: 3.7W (Ta), 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	pacchetto: -	Azione17.520	-	30V	18A (Ta), 30A (Tc)	7.12mOhm @ 15A, 10V	2.4V @ 250µA	18.2nC @ 10V	820pF @ 15V	3.7W (Ta), 16.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
BSM400D12P2G003	Rohm Semiconductor	SIC 2N-CH 1200V 400A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 85mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 10V Power - Max: 2450W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: Module Supplier Device Package: Module	pacchetto: -	Azione12	-	1200V (1.2kV)	400A (Tc)	-	4V @ 85mA	-	38000pF @ 10V	2450W (Tc)	-40°C ~ 150°C (TJ)	-	Module	Module
NXV08H350XT1	onsemi	MOSFET 80V APM17-MDC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 0.762mOhm @ 160A, 12V Vgs(th) (Max) @ Id: 4.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V Power - Max: - Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 17-PowerDIP Module (1.390", 35.30mm) Supplier Device Package: APM17-MDC	pacchetto: -	Request a Quote	-	80V	-	0.762mOhm @ 160A, 12V	4.6V @ 1mA	320nC @ 10V	24350pF @ 40V	-	-40°C ~ 125°C (TA)	Through Hole	17-PowerDIP Module (1.390", 35.30mm)	APM17-MDC
HUFA76409T3ST	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
ECH8674-TL-H	Sanyo	MOSFET 2P-CH 12V 5A SOT28 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 41mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 6V Power - Max: 1.3W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/ECH8	pacchetto: -	Request a Quote	-	12V	5A (Ta)	41mOhm @ 3A, 4.5V	1.3V @ 1mA	6.9nC @ 4.5V	660pF @ 6V	1.3W (Ta)	150°C	Surface Mount	8-SMD, Flat Lead	SOT-28FL/ECH8
IRF7379QTRPBF	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2.5W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: -	Request a Quote	Logic Level Gate	30V	5.8A, 4.3A	45mOhm @ 5.8A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2.5W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN3006SCA6-7	Diodes Incorporated	MOSFET 2N-CH 30V 13A X4-DSN3519 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2235pF @ 15V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X4-DSN3519-6	pacchetto: -	Request a Quote	-	30V	13A (Ta)	5.5mOhm @ 5A, 10V	2.2V @ 1mA	17.7nC @ 4.5V	2235pF @ 15V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X4-DSN3519-6
MSCSM120XM50CTYZBNMG	Microchip Technology	PM-MOSFET-SIC-SBD-6HPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 49A (Tc), 80A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, 3020pF @ 1000V Power - Max: 196W (Tc), 315W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	pacchetto: -	Request a Quote	-	1200V (1.2kV)	49A (Tc), 80A (Tc)	50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V	2.7V @ 2mA, 2.8V @ 3mA	137nC @ 20V, 232nC @ 20V	1990pF @ 1000V, 3020pF @ 1000V	196W (Tc), 315W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-

JAN2N7334

Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

FET Type: 4 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: MO-036AB

pacchetto: 14-DIP (0.300", 7.62mm)

Azione3.328

Standard

100V

1A

700 mOhm @ 600mA, 10V

4V @ 250µA

60nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

MO-036AB

MMDF3N04HDR2G

ON Semiconductor

MOSFET 2N-CH 40V 3.4A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Power - Max: 1.39W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione1.169.340

Logic Level Gate

40V

3.4A

80 mOhm @ 3.4A, 10V

3V @ 250µA

28nC @ 10V

900pF @ 32V

1.39W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NTJD4152PT1

ON Semiconductor

MOSFET 2P-CH 20V 0.88A SOT-363

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Power - Max: 272mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione55.020

Logic Level Gate

20V

880mA

260 mOhm @ 880mA, 4.5V

1.2V @ 250µA

2.2nC @ 4.5V

155pF @ 20V

272mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

STS4DNF60

STMicroelectronics

MOSFET 2N-CH 60V 4A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione6.272

Logic Level Gate

60V

4A

90 mOhm @ 2A, 10V

4V @ 250µA

10nC @ 10V

315pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTC60DDAM45T1G

Microsemi Corporation

MOSFET 2N-CH 600V 49A SP1

FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

pacchetto: SP1

Azione7.760

Super Junction

600V

49A

45 mOhm @ 24.5A, 10V

3.9V @ 3mA

150nC @ 10V

7200pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

SMA5127

Sanken

MOSFET 3N/3P-CH 60V 4A 12-SIP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 550 Ohm @ 2A, 4V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Power - Max: 4W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

pacchetto: 12-SIP, Exposed Tab

Azione75.840

Standard

60V

4A

550 Ohm @ 2A, 4V

2V @ 250µA

-

150pF @ 10V

4W

150°C (TJ)

Through Hole

12-SIP, Exposed Tab

12-SIP

SI4914BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8.4A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.7W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione1.539.588

Standard

30V

8.4A, 8A

21 mOhm @ 8A, 10V

2.7V @ 250µA

10.5nC @ 4.5V

-

2.7W, 3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AON6996

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 50A/60A DFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A, 60A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)

pacchetto: 8-PowerSMD, Flat Leads

Azione2.112

Standard

30V

50A, 60A

5.2 mOhm @ 20A, 10V

2.2V @ 250µA

13nC @ 10V

820pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerSMD, Flat Leads

8-DFN (5x6)

QS8J2TR

Rohm Semiconductor

MOSFET 2P-CH 12V 4A TSMT8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V
Power - Max: 550mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

pacchetto: 8-SMD, Flat Lead

Azione5.552

Logic Level Gate, 1.5V Drive

12V

4A

36 mOhm @ 4A, 4.5V

1V @ 1mA

20nC @ 4.5V

1940pF @ 6V

550mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

FDS4897AC

Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 6.1A/5.2A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A
Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione12.828

Logic Level Gate

40V

6.1A, 5.2A

26 mOhm @ 6.1A, 10V

3V @ 250µA

21nC @ 10V

1055pF @ 20V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXMP6A16DN8QTA

Diodes Incorporated

MOSFET 2P-CH 60V 2.9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Power - Max: 1.81W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione11.412

Logic Level Gate

60V

2.9A

85 mOhm @ 2.9A, 10V

1V @ 250µA (Min)

24.2nC @ 10V

1021pF @ 30V

1.81W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7304

Infineon Technologies

MOSFET 2P-CH 20V 4.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione15.444

Logic Level Gate

20V

4.3A

90 mOhm @ 2.2A, 4.5V

700mV @ 250µA

22nC @ 4.5V

610pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

PMCXB1000UEZ

Nexperia USA Inc.

MOSFET ARRAY N/PCH 30V DFN1010B6

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta)
Rds On (Max) @ Id, Vgs: 670 mOhm @ 590mA, 4.5V, 1.4 Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V
Power - Max: 285mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6

pacchetto: 6-XFDFN Exposed Pad

Azione6.240

Standard

30V

590mA (Ta), 410mA (Ta)

670 mOhm @ 590mA, 4.5V, 1.4 Ohm @ 410mA, 4.5V

950mV @ 250µA

1.05nC @ 4.5V, 1.2nC @ 4.5V

30.3pF @ 15V, 43.2pF @ 15V

285mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

DFN1010B-6

NTMFD4C85NT1G

ON Semiconductor

MOSFET 2N-CH 30V 8DFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Power - Max: 1.13W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6)

pacchetto: 8-PowerTDFN

Azione7.904

Standard

30V

15.4A, 29.7A

3 mOhm @ 20A, 10V

2.1V @ 250µA

32nC @ 10V

1960pF @ 15V

1.13W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6)

FDPC8014S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 8PWRCLIP

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A, 41A
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V
Power - Max: 2.1W, 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power Clip 56

pacchetto: 8-PowerWDFN

Azione3.456

Logic Level Gate

25V

20A, 41A

3.8 mOhm @ 20A, 10V

2.5V @ 250µA

35nC @ 10V

2375pF @ 13V

2.1W, 2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power Clip 56

NTMD4820NR2G

ON Semiconductor

MOSFET 2N-CH 30V 4.9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
Power - Max: 750mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione1.300.728

Logic Level Gate

30V

4.9A

20 mOhm @ 7.5A, 10V

3V @ 250µA

7.7nC @ 4.5V

940pF @ 15V

750mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CMLDM7003G TR

Central Semiconductor Corp

MOSFET 2N-CH 50V 0.28A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacchetto: SOT-563, SOT-666

Azione4.992

Standard

50V

280mA

2 Ohm @ 50mA, 5V

1V @ 250µA

0.76nC @ 4.5V

50pF @ 25V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN2050LFDB-7

Diodes Incorporated

MOSFET 2N-CH 20V 3.3A 6UDFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
Power - Max: 730mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

pacchetto: 6-UDFN Exposed Pad

Azione3.776

Logic Level Gate

20V

3.3A

45 mOhm @ 5A, 4.5V

1V @ 250µA

12nC @ 10V

389pF @ 10V

730mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

EM5K5T2R

Rohm Semiconductor

MOSFET 2N-CH 30V 0.3A EMT5

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 600 mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 150mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: EMT5

pacchetto: 6-SMD (5 Leads), Flat Lead

Azione94.290

Standard

30V

300mA

600 mOhm @ 300mA, 4.5V

-

150mW

-

Surface Mount

6-SMD (5 Leads), Flat Lead

EMT5

DMHC4035LSD-13

Diodes Incorporated

MOSFET 2N/2P-CH 40V 8-SOIC

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.7A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione20.304

Logic Level Gate

40V

4.5A, 3.7A

45 mOhm @ 3.9A, 10V

3V @ 250µA

12.5nC @ 10V

574pF @ 20V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIZ348DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 18A/30A 8PWR33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Power - Max: 3.7W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

pacchetto: -

Azione17.520

-

30V

18A (Ta), 30A (Tc)

7.12mOhm @ 15A, 10V

2.4V @ 250µA

18.2nC @ 10V

820pF @ 15V

3.7W (Ta), 16.7W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

BSM400D12P2G003

Rohm Semiconductor

SIC 2N-CH 1200V 400A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 85mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 10V
Power - Max: 2450W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: Module
Supplier Device Package: Module

pacchetto: -

Azione12

-

1200V (1.2kV)

400A (Tc)

-

4V @ 85mA

-

38000pF @ 10V

2450W (Tc)

-40°C ~ 150°C (TJ)

-

Module

NXV08H350XT1

onsemi

MOSFET 80V APM17-MDC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 0.762mOhm @ 160A, 12V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Power - Max: -
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Supplier Device Package: APM17-MDC

pacchetto: -

Request a Quote

-

80V

-

0.762mOhm @ 160A, 12V

4.6V @ 1mA

320nC @ 10V

24350pF @ 40V

-

-40°C ~ 125°C (TA)

Through Hole

17-PowerDIP Module (1.390", 35.30mm)

APM17-MDC

HUFA76409T3ST

Fairchild Semiconductor

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

ECH8674-TL-H

Sanyo

MOSFET 2P-CH 12V 5A SOT28

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 6V
Power - Max: 1.3W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/ECH8

pacchetto: -

Request a Quote

-

12V

5A (Ta)

41mOhm @ 3A, 4.5V

1.3V @ 1mA

6.9nC @ 4.5V

660pF @ 6V

1.3W (Ta)

150°C

Surface Mount

8-SMD, Flat Lead

SOT-28FL/ECH8

IRF7379QTRPBF

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2.5W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: -

Request a Quote

Logic Level Gate

30V

5.8A, 4.3A

45mOhm @ 5.8A, 10V

1V @ 250µA

25nC @ 10V

520pF @ 25V

2.5W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN3006SCA6-7

Diodes Incorporated

MOSFET 2N-CH 30V 13A X4-DSN3519

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2235pF @ 15V
Power - Max: 800mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X4-DSN3519-6

pacchetto: -

Request a Quote

-

30V

13A (Ta)

5.5mOhm @ 5A, 10V

2.2V @ 1mA

17.7nC @ 4.5V

2235pF @ 15V

800mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X4-DSN3519-6

MSCSM120XM50CTYZBNMG

Microchip Technology

PM-MOSFET-SIC-SBD-6HPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 49A (Tc), 80A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, 3020pF @ 1000V
Power - Max: 196W (Tc), 315W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

pacchetto: -

Request a Quote

-

1200V (1.2kV)

49A (Tc), 80A (Tc)

50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V

2.7V @ 2mA, 2.8V @ 3mA

137nC @ 20V, 232nC @ 20V

1990pF @ 1000V, 3020pF @ 1000V

196W (Tc), 315W (Tc)

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-