Pagina 237 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BD240C-S	Bourns Inc.	TRANS PNP 100V 2A Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	pacchetto: TO-220-3	Azione3.104	2A	100V	700mV @ 200mA, 1A	300µA	15 @ 1A, 4V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
2SC3503CSTU	Fairchild/ON Semiconductor	TRANS NPN 300V 0.1A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Power - Max: 7W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	pacchetto: TO-225AA, TO-126-3	Azione2.352	100mA	300V	600mV @ 2mA, 20mA	100nA (ICBO)	40 @ 10mA, 10V	7W	150MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
2N6387	ON Semiconductor	TRANS NPN DARL 60V 10A TO220AB Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	pacchetto: TO-220-3	Azione5.056	10A	60V	3V @ 100mA, 10A	1mA	1000 @ 5A, 3V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
KSE803S	Fairchild/ON Semiconductor	TRANS NPN DARL 80V 4A TO-126 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	pacchetto: TO-225AA, TO-126-3	Azione4.624	4A	80V	2.8V @ 40mA, 2A	100µA	750 @ 2A, 3V	40W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
FZT949TC	Diodes Incorporated	TRANS PNP 30V 5.5A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 5.5A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 440mV @ 500mA, 5.5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 3W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: TO-261-4, TO-261AA	Azione3.744	5.5A	30V	440mV @ 500mA, 5.5A	50nA (ICBO)	100 @ 1A, 1V	3W	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
STW13009	STMicroelectronics	TRANS NPN 400V 12A TO247 Transistor Type: NPN Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3A, 12A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V Power - Max: 125W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	pacchetto: TO-247-3	Azione5.200	12A	400V	2.5V @ 3A, 12A	-	15 @ 5A, 5V	125W	-	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
2SD21780SA	Panasonic Electronic Components	TRANS NPN 50V 2A MT-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 200mA, 2V Power - Max: 1.5W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: MT-3-A1	pacchetto: 3-SIP	Azione2.864	2A	50V	300mV @ 50mA, 1A	100nA (ICBO)	170 @ 200mA, 2V	1.5W	150MHz	150°C (TJ)	Through Hole	3-SIP	MT-3-A1
2SB169900L	Panasonic Electronic Components	TRANS PNP 60V 2A MINI PWR Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 4V Power - Max: 1W Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MiniP3-F1	pacchetto: TO-243AA	Azione7.472	2A	60V	500mV @ 250mA, 2A	100µA	80 @ 1A, 4V	1W	180MHz	150°C (TJ)	Surface Mount	TO-243AA	MiniP3-F1
BCW61AE6327HTSA1	Infineon Technologies	TRANS PNP 32V 0.1A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione5.520	100mA	32V	550mV @ 1.25mA, 50mA	20nA (ICBO)	120 @ 2mA, 5V	330mW	250MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
TIP101-BP	Micro Commercial Co	TRANS NPN DARL 80V 8A TO-220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Power - Max: 80W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	pacchetto: TO-220-3	Azione4.256	8A	80V	2.5V @ 80mA, 8A	50µA	1000 @ 3A, 4V	80W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
TIP115G	ON Semiconductor	TRANS PNP DARL 60V 2A TO220AB Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	pacchetto: TO-220-3	Azione5.392	2A	60V	2.5V @ 8mA, 2A	2mA	1000 @ 1A, 4V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
2SAR293PT100	Rohm Semiconductor	TRANS PNP 30V 1A MPT3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Power - Max: 2W Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	pacchetto: TO-243AA	Azione15.420	1A	30V	350mV @ 25mA, 500mA	100nA (ICBO)	270 @ 100mA, 2V	2W	320MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
2PA1774SM,315	Nexperia USA Inc.	TRANS PNP 40V 0.1A SC101 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Power - Max: 430mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: DFN1006-3	pacchetto: SC-101, SOT-883	Azione7.408	100mA	40V	200mV @ 5mA, 50mA	100nA (ICBO)	270 @ 1mA, 6V	430mW	100MHz	150°C (TJ)	Surface Mount	SC-101, SOT-883	DFN1006-3
2SB09680RL	Panasonic Electronic Components	TRANS PNP 40V 1.5A U-G2 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V Power - Max: 10W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: U-G2	pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63	Azione81.900	1.5A	40V	1V @ 150mA, 1.5A	100µA	120 @ 1A, 5V	10W	150MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	U-G2
BUL49D	STMicroelectronics	TRANS NPN 450V 5A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 450V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 800mA, 4A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 7A, 10V Power - Max: 80W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	pacchetto: TO-220-3	Azione18.870	5A	450V	1.2V @ 800mA, 4A	100µA	4 @ 7A, 10V	80W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
BCV47,235	Nexperia USA Inc.	TRANS NPN DARL 60V 0.5A SOT23 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 250mW Frequency - Transition: 220MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione120.000	500mA	60V	1V @ 100µA, 100mA	100nA (ICBO)	10000 @ 100mA, 5V	250mW	220MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
2DD2678-13	Diodes Incorporated	TRANS NPN 12V 3A SOT89-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 170MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	pacchetto: TO-243AA	Azione1.313.256	3A	12V	250mV @ 30mA, 1.5A	100nA (ICBO)	270 @ 500mA, 2V	900mW	170MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
NTE2321	NTE Electronics, Inc	TRANS NPN 40V 0.5A 14DIP Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 650 mW Frequency - Transition: 350MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-DIP	pacchetto: -	Request a Quote	500 mA	40 V	1.6V @ 30mA, 300mA	50nA (ICBO)	100 @ 150mA, 10V	650 mW	350MHz	-65°C ~ 200°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-DIP
2SB772-Y-BP	Micro Commercial Co	TRANS PNP 30V 3A TO126 Transistor Type: PNP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Power - Max: 1.25 W Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	pacchetto: -	Request a Quote	3 A	30 V	500mV @ 200mA, 2A	1µA	160 @ 1A, 2V	1.25 W	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
2SB1324-TD-E	onsemi	BIP PNP 3A 30V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N3791-PBFREE	Central Semiconductor Corp	TRANS PNP 60V 10A TO-3 Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V Power - Max: 150 W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	pacchetto: -	Request a Quote	10 A	60 V	1V @ 500mA, 5A	-	50 @ 1A, 2V	150 W	4MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
BCX55-16-13P	Micro Commercial Co	BIPOLAR TRANSISTORS Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 500 mW Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	pacchetto: -	Request a Quote	1 A	60 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	500 mW	130MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
ZTX450-AP	Micro Commercial Co	TRANS NPN 45V 1A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625 mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	pacchetto: -	Request a Quote	1 A	45 V	250mV @ 15mA, 150mA	100nA (ICBO)	100 @ 150mA, 10V	625 mW	150MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
BC846AQC-QZ	Nexperia USA Inc.	TRANS NPN 65V 0.1A DFN1412D-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 360 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1412D-3	pacchetto: -	Azione10.371	100 mA	65 V	400mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	360 mW	100MHz	150°C (TJ)	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1412D-3
SB29003TF	Fairchild Semiconductor	SB29003 - HIGH VOLTAGE TRANSISTO Transistor Type: NPN Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Power - Max: 2 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-4	pacchetto: -	Request a Quote	300 mA	400 V	750mV @ 5mA, 50mA	500nA	50 @ 10mA, 10V	2 W	-	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-4
JANSH2N3439U4-TR	Microchip Technology	RH POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	pacchetto: -	Request a Quote	1 A	350 V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
2N5339T3	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	pacchetto: -	Request a Quote	5 A	100 V	1.2V @ 500mA, 5A	100µA	60 @ 2A, 2V	1 W	-	-55°C ~ 200°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2C4300	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BD240C-S

Bourns Inc.

TRANS PNP 100V 2A

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

pacchetto: TO-220-3

Azione3.104

2A

100V

700mV @ 200mA, 1A

300µA

15 @ 1A, 4V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

2SC3503CSTU

Fairchild/ON Semiconductor

TRANS NPN 300V 0.1A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Power - Max: 7W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

pacchetto: TO-225AA, TO-126-3

Azione2.352

100mA

300V

600mV @ 2mA, 20mA

100nA (ICBO)

40 @ 10mA, 10V

7W

150MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

2N6387

ON Semiconductor

TRANS NPN DARL 60V 10A TO220AB

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

pacchetto: TO-220-3

Azione5.056

10A

60V

3V @ 100mA, 10A

1mA

1000 @ 5A, 3V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

KSE803S

Fairchild/ON Semiconductor

TRANS NPN DARL 80V 4A TO-126

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

pacchetto: TO-225AA, TO-126-3

Azione4.624

4A

80V

2.8V @ 40mA, 2A

100µA

750 @ 2A, 3V

40W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

FZT949TC

Diodes Incorporated

TRANS PNP 30V 5.5A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 5.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 440mV @ 500mA, 5.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 3W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

pacchetto: TO-261-4, TO-261AA

Azione3.744

5.5A

30V

440mV @ 500mA, 5.5A

50nA (ICBO)

100 @ 1A, 1V

3W

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

STW13009

STMicroelectronics

TRANS NPN 400V 12A TO247

Transistor Type: NPN
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3A, 12A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
Power - Max: 125W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

pacchetto: TO-247-3

Azione5.200

12A

400V

2.5V @ 3A, 12A

-

15 @ 5A, 5V

125W

-

150°C (TJ)

Through Hole

TO-247-3

2SD21780SA

Panasonic Electronic Components

TRANS NPN 50V 2A MT-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 200mA, 2V
Power - Max: 1.5W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: MT-3-A1

pacchetto: 3-SIP

Azione2.864

2A

50V

300mV @ 50mA, 1A

100nA (ICBO)

170 @ 200mA, 2V

1.5W

150MHz

150°C (TJ)

Through Hole

3-SIP

MT-3-A1

2SB169900L

Panasonic Electronic Components

TRANS PNP 60V 2A MINI PWR

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 4V
Power - Max: 1W
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MiniP3-F1

pacchetto: TO-243AA

Azione7.472

2A

60V

500mV @ 250mA, 2A

100µA

80 @ 1A, 4V

1W

180MHz

150°C (TJ)

Surface Mount

TO-243AA

MiniP3-F1

BCW61AE6327HTSA1

Infineon Technologies

TRANS PNP 32V 0.1A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione5.520

100mA

32V

550mV @ 1.25mA, 50mA

20nA (ICBO)

120 @ 2mA, 5V

330mW

250MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

TIP101-BP

Micro Commercial Co

TRANS NPN DARL 80V 8A TO-220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Power - Max: 80W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

pacchetto: TO-220-3

Azione4.256

8A

80V

2.5V @ 80mA, 8A

50µA

1000 @ 3A, 4V

80W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

TIP115G

ON Semiconductor

TRANS PNP DARL 60V 2A TO220AB

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

pacchetto: TO-220-3

Azione5.392

2A

60V

2.5V @ 8mA, 2A

2mA

1000 @ 1A, 4V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

2SAR293PT100

Rohm Semiconductor

TRANS PNP 30V 1A MPT3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Power - Max: 2W
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

pacchetto: TO-243AA

Azione15.420

1A

30V

350mV @ 25mA, 500mA

100nA (ICBO)

270 @ 100mA, 2V

2W

320MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

2PA1774SM,315

Nexperia USA Inc.

TRANS PNP 40V 0.1A SC101

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Power - Max: 430mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3

pacchetto: SC-101, SOT-883

Azione7.408

100mA

40V

200mV @ 5mA, 50mA

100nA (ICBO)

270 @ 1mA, 6V

430mW

100MHz

150°C (TJ)

Surface Mount

SC-101, SOT-883

DFN1006-3

2SB09680RL

Panasonic Electronic Components

TRANS PNP 40V 1.5A U-G2

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
Power - Max: 10W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: U-G2

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

Azione81.900

1.5A

40V

1V @ 150mA, 1.5A

100µA

120 @ 1A, 5V

10W

150MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

U-G2

BUL49D

STMicroelectronics

TRANS NPN 450V 5A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 800mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 7A, 10V
Power - Max: 80W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

pacchetto: TO-220-3

Azione18.870

5A

450V

1.2V @ 800mA, 4A

100µA

4 @ 7A, 10V

80W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

BCV47,235

Nexperia USA Inc.

TRANS NPN DARL 60V 0.5A SOT23

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 250mW
Frequency - Transition: 220MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione120.000

500mA

60V

1V @ 100µA, 100mA

100nA (ICBO)

10000 @ 100mA, 5V

250mW

220MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

2DD2678-13

Diodes Incorporated

TRANS NPN 12V 3A SOT89-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 170MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

pacchetto: TO-243AA

Azione1.313.256

3A

12V

250mV @ 30mA, 1.5A

100nA (ICBO)

270 @ 500mA, 2V

900mW

170MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

NTE2321

NTE Electronics, Inc

TRANS NPN 40V 0.5A 14DIP

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 650 mW
Frequency - Transition: 350MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-DIP

pacchetto: -

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500 mA

40 V

1.6V @ 30mA, 300mA

50nA (ICBO)

100 @ 150mA, 10V

650 mW

350MHz

-65°C ~ 200°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

14-DIP

2SB772-Y-BP

Micro Commercial Co

TRANS PNP 30V 3A TO126

Transistor Type: PNP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Power - Max: 1.25 W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

pacchetto: -

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3 A

30 V

500mV @ 200mA, 2A

1µA

160 @ 1A, 2V

1.25 W

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

2SB1324-TD-E

onsemi

BIP PNP 3A 30V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

2N3791-PBFREE

Central Semiconductor Corp

TRANS PNP 60V 10A TO-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Power - Max: 150 W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

pacchetto: -

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10 A

60 V

1V @ 500mA, 5A

-

50 @ 1A, 2V

150 W

4MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

BCX55-16-13P

Micro Commercial Co

BIPOLAR TRANSISTORS

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 500 mW
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

pacchetto: -

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1 A

60 V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

500 mW

130MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

ZTX450-AP

Micro Commercial Co

TRANS NPN 45V 1A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625 mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

pacchetto: -

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1 A

45 V

250mV @ 15mA, 150mA

100nA (ICBO)

100 @ 150mA, 10V

625 mW

150MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

BC846AQC-QZ

Nexperia USA Inc.

TRANS NPN 65V 0.1A DFN1412D-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 360 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1412D-3

pacchetto: -

Azione10.371

100 mA

65 V

400mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

360 mW

100MHz

150°C (TJ)

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1412D-3

SB29003TF

Fairchild Semiconductor

SB29003 - HIGH VOLTAGE TRANSISTO

Transistor Type: NPN
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Power - Max: 2 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4

pacchetto: -

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300 mA

400 V

750mV @ 5mA, 50mA

500nA

50 @ 10mA, 10V

2 W

-

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-4

JANSH2N3439U4-TR

Microchip Technology

RH POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

pacchetto: -

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1 A

350 V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

2N5339T3

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

pacchetto: -

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5 A

100 V

1.2V @ 500mA, 5A

100µA

60 @ 2A, 2V

1 W

-

-55°C ~ 200°C

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

2C4300

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-