Pagina 235 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Singoli

Record 20.307
Pagina  235/726
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BDX33D-S
Bourns Inc.

TRANS NPN DARL 120V 10A

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacchetto: TO-220-3
Azione4.160
10A
120V
2.5V @ 6mA, 3A
500µA
750 @ 3A, 3V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
BC639G
ON Semiconductor

TRANS NPN 80V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione3.664
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
625mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
KSC5367FTU
Fairchild/ON Semiconductor

TRANS NPN 800V 3A TO-220F

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 800V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200mA, 1A
  • Current - Collector Cutoff (Max): 20µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 400mA, 3V
  • Power - Max: 40W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
pacchetto: TO-220-3 Full Pack
Azione3.168
3A
800V
2.5V @ 200mA, 1A
20µA (ICBO)
12 @ 400mA, 3V
40W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
KSP8098CBU
Fairchild/ON Semiconductor

TRANS NPN 60V 0.5A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione7.072
500mA
60V
300mV @ 10mA, 100mA
100nA
100 @ 1mA, 5V
625mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot 2N6040
ON Semiconductor

TRANS PNP DARL 60V 8A TO220AB

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A
  • Current - Collector Cutoff (Max): 20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
  • Power - Max: 75W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione4.464
8A
60V
2V @ 16mA, 4A
20µA
1000 @ 4A, 4V
75W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
JANTXV2N2906A
Microsemi Corporation

TRANS PNP 60V 0.6A TO18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
pacchetto: TO-206AA, TO-18-3 Metal Can
Azione3.216
600mA
60V
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
hot BD139-10
STMicroelectronics

TRANS NPN 80V 1.5A SOT-32

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: SOT-32
pacchetto: TO-225AA, TO-126-3
Azione31.560
1.5A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1.25W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
SOT-32
NJVMJD112T4G
ON Semiconductor

TRANS NPN DARL 100V 2A DPAK

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
  • Power - Max: 1.75W
  • Frequency - Transition: 25MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione4.720
2A
100V
3V @ 40mA, 4A
20µA
1000 @ 2A, 3V
1.75W
25MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
FMMT617TC
Diodes Incorporated

TRANS NPN 15V 3A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.448
3A
15V
200mV @ 50mA, 3A
100nA
300 @ 200mA, 2V
625mW
120MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BCX70KT216
Rohm Semiconductor

TRANS NPN 45V 0.2A SST3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SST3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.912
200mA
45V
550mV @ 1.25mA, 50mA
100nA
250 @ 2mA, 5V
350mW
125MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SST3
hot TIP29A
STMicroelectronics

TRANS NPN 60V 1A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione11.568
1A
60V
700mV @ 125mA, 1A
300µA
15 @ 1A, 4V
2W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BC81825MTF
Fairchild/ON Semiconductor

TRANS NPN 25V 0.8A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 310mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.840
800mA
25V
700mV @ 50mA, 500mA
100nA
160 @ 100mA, 1V
310mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot KSA1182YMTF
Fairchild/ON Semiconductor

TRANS PNP 30V 0.5A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 150mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione376.692
500mA
30V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 100mA, 1V
150mW
200MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot DCP56-16-13
Diodes Incorporated

TRANS NPN 80V 1A SOT-223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione305.232
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
1W
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
PBSS4320X,135
Nexperia USA Inc.

TRANS NPN 20V 3A SOT89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 310mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
  • Power - Max: 1.6W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
pacchetto: TO-243AA
Azione35.442
3A
20V
310mV @ 300mA, 3A
100nA
200 @ 2A, 2V
1.6W
100MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
hot 2SC3858
Sanken

TRANS NPN 200V 17A MT-200

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 17A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8A, 4V
  • Power - Max: 200W
  • Frequency - Transition: 20MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-ESIP
  • Supplier Device Package: MT-200
pacchetto: 3-ESIP
Azione18.660
17A
200V
2.5V @ 1A, 10A
100µA (ICBO)
50 @ 8A, 4V
200W
20MHz
150°C (TJ)
Through Hole
3-ESIP
MT-200
DNLS350Y-13
Diodes Incorporated

TRANS NPN 50V 3A SOT89-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
pacchetto: TO-243AA
Azione23.994
3A
50V
370mV @ 300mA, 3A
100nA
300 @ 1A, 2V
1W
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
2N3053-PBFREE
Central Semiconductor Corp

TRANS NPN 40V 0.7A TO-39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
  • Power - Max: 5 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: -
Azione1.497
700 mA
40 V
1.4V @ 15mA, 150mA
-
50 @ 150mA, 10V
5 W
100MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
2SC4116-BL-TP
Micro Commercial Co

TRANS NPN 60V 0.15A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 1mA, 6V
  • Power - Max: 100 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: -
Request a Quote
150 mA
60 V
250mV @ 5mA, 50mA
100nA (ICBO)
350 @ 1mA, 6V
100 mW
80MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
PBSS5360Z-QX
Nexperia USA Inc.

TRANS PNP 60V 3A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 50mA, 5V
  • Power - Max: 650 mW
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: -
Request a Quote
3 A
60 V
550mV @ 300mA, 3A
100nA
150 @ 50mA, 5V
650 mW
130MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
JANTX2N2906AUBC-TR
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UBC
pacchetto: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
40 @ 500mA, 10V
500 mW
-
-65°C ~ 200°C
Surface Mount
3-SMD, No Lead
UBC
2SC5226-4-TL-E
onsemi

BIP NPN 70MA 10V FT=7G

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NTE152MP
NTE Electronics, Inc

TRANS NPN 90V 4A TO220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 90 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
  • Current - Collector Cutoff (Max): 20µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
  • Power - Max: 40 W
  • Frequency - Transition: 8MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacchetto: -
Request a Quote
4 A
90 V
1.5V @ 300mA, 3A
20µA (ICBO)
40 @ 500mA, 5V
40 W
8MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220
2N3715-PBFREE
Central Semiconductor Corp

TRANS NPN 60V 10A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
  • Power - Max: 150 W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
pacchetto: -
Request a Quote
10 A
60 V
800mV @ 500mA, 5A
-
50 @ 1A, 2V
150 W
4MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
2N6383
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
  • Power - Max: 6 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
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10 A
40 V
3V @ 100mA, 10A
1mA
1000 @ 5A, 3V
6 W
-
-55°C ~ 175°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204AA (TO-3)
PXT8050-C-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 500 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
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1.5 A
25 V
500mV @ 80mA, 800mA
100nA
120 @ 100mA, 1V
500 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89
KTA1267-Y-AP
Micro Commercial Co

TRANS PNP 50V 0.15A TO92S

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 400 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
  • Supplier Device Package: TO-92S
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150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
400 mW
80MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body (Formed Leads)
TO-92S
BC869TA
Diodes Incorporated

TRANS PNP 20V 1A SOT-89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
  • Power - Max: 1 W
  • Frequency - Transition: 60MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
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1 A
20 V
500mV @ 100mA, 1A
-
85 @ 500mA, 1V
1 W
60MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3