Pagina 201 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Singoli

Record 20.307
Pagina  201/726
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot PZTA42E6327HTSA1
Infineon Technologies

TRANS NPN 300V 0.5A SOT-223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
  • Power - Max: 1.5W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
pacchetto: TO-261-4, TO-261AA
Azione24.000
500mA
300V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
1.5W
70MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
BC 807-16 E6433
Infineon Technologies

TRANS PNP 45V 0.5A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione6.976
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
330mW
200MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
JANTXV2N3440
Microsemi Corporation

TRANS NPN 250V 1A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione5.328
1A
250V
500mV @ 4mA, 50mA
2µA
40 @ 20mA, 10V
800mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
BD242C-S
Bourns Inc.

TRANS PNP 100V 3A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacchetto: TO-220-3
Azione7.744
3A
100V
1.2V @ 600mA, 3A
300µA
10 @ 3A, 4V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot MD1802FX
STMicroelectronics

TRANS NPN 700V 10A ISOWATT218FX

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 700V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 5A
  • Current - Collector Cutoff (Max): 200µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 5A, 5V
  • Power - Max: 57W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOWATT218FX
  • Supplier Device Package: ISOWATT-218FX
pacchetto: ISOWATT218FX
Azione40.956
10A
700V
1.5V @ 1.25A, 5A
200µA
5.5 @ 5A, 5V
57W
-
150°C (TJ)
Through Hole
ISOWATT218FX
ISOWATT-218FX
MPSA55_D75Z
Fairchild/ON Semiconductor

TRANS PNP 60V 0.5A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.704
500mA
60V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
625mW
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot BCP6825TA
Diodes Incorporated

TRANS NPN 20V 1A SOT-223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione16.068
1A
20V
500mV @ 100mA, 1A
100nA (ICBO)
160 @ 500mA, 1V
2W
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot KSB907TU
Fairchild/ON Semiconductor

TRANS PNP DARL 40V 3A I-PAK

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A
  • Current - Collector Cutoff (Max): 20µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 2V
  • Power - Max: 15W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: I-Pak
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione13.032
3A
40V
1.5V @ 4mA, 2A
20µA (ICBO)
1000 @ 3A, 2V
15W
-
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
I-Pak
hot MPSA56RA
Fairchild/ON Semiconductor

TRANS PNP 80V 0.5A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione24.000
500mA
80V
200mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
625mW
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2SB0621ARA
Panasonic Electronic Components

TRANS PNP 50V 1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
  • Power - Max: 750mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92B-B1
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.232
1A
50V
400mV @ 50mA, 500mA
100nA (ICBO)
120 @ 500mA, 10V
750mW
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92B-B1
PVR100AZ-B5V0,115
NXP

TRANS NPN 45V 0.1A SOT223

  • Transistor Type: NPN + Zener
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 550mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione3.248
100mA
45V
-
100nA (ICBO)
160 @ 100mA, 1V
550mW
-
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot 2N2369A
Fairchild/Micross Components

DIE TRANS NPN MED PWR HS SWITCH

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione42.996
-
-
-
-
-
-
-
-
-
-
-
hot MMBT6521LT1G
ON Semiconductor

TRANS NPN 25V 0.1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
  • Power - Max: 225mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione72.000
100mA
25V
500mV @ 5mA, 50mA
500nA (ICBO)
300 @ 2mA, 10V
225mW
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
PMBS3904,235
Nexperia USA Inc.

TRANS NPN 40V 0.1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 250mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione84.816
100mA
40V
300mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
250mW
180MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
hot MJD44H11T4
STMicroelectronics

TRANS NPN 80V 8A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
  • Power - Max: 20W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione232.044
8A
80V
1V @ 400mA, 8A
10µA
40 @ 4A, 1V
20W
-
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot FZT855TA
Diodes Incorporated

TRANS NPN 150V 5A SOT-223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 355mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
  • Power - Max: 3W
  • Frequency - Transition: 90MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione37.596
5A
150V
355mV @ 500mA, 5A
50nA (ICBO)
100 @ 1A, 5V
3W
90MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
JANSR2N2221AUBC-TR
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UBC
pacchetto: -
Request a Quote
800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UBC
JANTX2N3765L
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BFT19
Harris Corporation

TRANS PNP 200V 1A TO205AD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-205AD
pacchetto: -
Request a Quote
1 A
200 V
2.5V @ 3mA, 30mA
100µA (ICBO)
25 @ 5mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-205AD
2N5660U3
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
  • Current - Collector Cutoff (Max): 200nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
  • Power - Max: 2 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U3
pacchetto: -
Request a Quote
2 A
200 V
800mV @ 400mA, 2A
200nA
40 @ 500mA, 5V
2 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U3
SBC847BWT1G-M02
onsemi

SBC847BW - SMALL SIGNAL BIPOLAR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 310 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
pacchetto: -
Request a Quote
100 mA
45 V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
310 mW
300MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70-3 (SOT323)
BULD741-1
STMicroelectronics

TRANS NPN 400V 2.5A IPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2.5 A
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 2A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 450mA, 3V
  • Power - Max: 30 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: IPAK
pacchetto: -
Request a Quote
2.5 A
400 V
1.5V @ 600mA, 2A
250µA
25 @ 450mA, 3V
30 W
-
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
IPAK
MMSS8050HE3-L-TP
Micro Commercial Co

NPN TRANSISTORS, SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: -
Azione11.952
1.5 A
25 V
500mV @ 80mA, 800mA
100nA
120 @ 100mA, 1V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2N5367-PBFREE
Central Semiconductor Corp

TRANS PNP 40V 0.3A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 300 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
  • Power - Max: 625 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
pacchetto: -
Request a Quote
300 mA
40 V
1V @ 30mA, 300mA
100nA (ICBO)
100 @ 50mA, 1V
625 mW
250MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
2N2201
Microchip Technology

POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N3789
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 150 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AD (TO-3)
pacchetto: -
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10 A
60 V
-
-
-
150 W
-
-
Through Hole
TO-204AA, TO-3
TO-204AD (TO-3)
2N5804
Microchip Technology

TRANS PNP 225V 5A TO3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 225 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 62 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
pacchetto: -
Request a Quote
5 A
225 V
-
-
-
62 W
-
-
Through Hole
TO-204AA, TO-3
TO-3
2SAR586JFRGTLL
Rohm Semiconductor

TRANS PNP 80V 5A LPTL

  • Transistor Type: -
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
  • Power - Max: 40 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPTL
pacchetto: -
Azione2.913
5 A
80 V
320mV @ 100mA, 2A
1µA (ICBO)
120 @ 500mA, 3V
40 W
-
150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPTL