Pagina 198 - Transistor - Bipolari (BJT) - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Singoli

Record 20.307
Pagina  198/726
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BCP5516H6327XTSA1
Infineon Technologies

TRANS NPN 60V 1A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
pacchetto: TO-261-4, TO-261AA
Azione6.736
1A
60V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
2W
100MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
2N4401,116
NXP

TRANS NPN 40V 0.6A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
  • Power - Max: 630mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione4.192
600mA
40V
750mV @ 50mA, 500mA
50nA (ICBO)
100 @ 150mA, 1V
630mW
250MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MMBT3904T-7
Diodes Incorporated

TRANS NPN 40V 0.2A SOT-523

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 150mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
pacchetto: SOT-523
Azione7.472
200mA
40V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
150mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
hot ZTX1147A
Diodes Incorporated

TRANS PNP 12V 4A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 235mV @ 70mA, 4A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 115MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
pacchetto: E-Line-3
Azione4.688
4A
12V
235mV @ 70mA, 4A
100nA
250 @ 500mA, 2V
1W
115MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
hot 2SB1183TL
Rohm Semiconductor

TRANS PNP DARL 40V 2A SOT-428

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2mA, 600mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: CPT3
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione239.100
2A
40V
1.5V @ 1.2mA, 600mA
1µA (ICBO)
1000 @ 500mA, 2V
1W
-
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
CPT3
BD242BG
ON Semiconductor

TRANS PNP 80V 3A TO220AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
  • Power - Max: 40W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacchetto: TO-220-3
Azione5.312
3A
80V
1.2V @ 600mA, 3A
300µA
25 @ 1A, 4V
40W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot 2DB1386Q-13
Diodes Incorporated

TRANS PNP 20V 5A SOT89-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
pacchetto: TO-243AA
Azione564.780
5A
20V
1V @ 100mA, 4A
500nA (ICBO)
120 @ 500mA, 2V
1W
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
FZT651QTA
Diodes Incorporated

TRANS NPN 60V 3A SOT-223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 3W
  • Frequency - Transition: 175MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione2.864
3A
60V
600mV @ 300mA, 3A
100nA (ICBO)
100 @ 500mA, 2V
3W
175MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot KSH44H11TM
Fairchild/ON Semiconductor

TRANS NPN 80V 8A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
  • Power - Max: 1.75W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione45.360
8A
80V
1V @ 400mA, 8A
10µA
40 @ 4A, 1V
1.75W
50MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
SMBTA06E6327HTSA1
Infineon Technologies

TRANS NPN 80V 0.5A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.656
500mA
80V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
330mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
ECH8102-TL-H
ON Semiconductor

TRANS PNP 30V 12A ECH8

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 12A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 135mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1.6W
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
pacchetto: 8-SMD, Flat Lead
Azione29.850
12A
30V
135mV @ 300mA, 6A
100nA (ICBO)
200 @ 500mA, 2V
1.6W
140MHz
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
hot MMBT4124LT1G
ON Semiconductor

TRANS NPN 25V 0.2A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
  • Power - Max: 225mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione540.084
200mA
25V
300mV @ 5mA, 50mA
50nA (ICBO)
120 @ 2mA, 1V
225mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot SMMBT5551LT1G
ON Semiconductor

TRANS NPN 160V 0.6A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Power - Max: 225mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione72.000
600mA
160V
200mV @ 5mA, 50mA
100nA
80 @ 10mA, 5V
225mW
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
MJW3281AG
ON Semiconductor

TRANS NPN 230V 15A TO247

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 10A
  • Current - Collector Cutoff (Max): 50µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7A, 5V
  • Power - Max: 200W
  • Frequency - Transition: 30MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacchetto: TO-247-3
Azione21.738
15A
230V
2V @ 1A, 10A
50µA (ICBO)
50 @ 7A, 5V
200W
30MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
2SB1203S-FTT-TL-E
onsemi

BIP PNP 5A 50V

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: 2-TP-FA
pacchetto: -
Request a Quote
5 A
50 V
550mV @ 150mA, 3A
1µA (ICBO)
140 @ 500mA, 2V
1 W
130MHz
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
2-TP-FA
2N718
Microchip Technology

POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC4412-5-TB-E
onsemi

BIP NPN 50MA 300V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC2001-K-AP
Micro Commercial Co

TRANS NPN 25V 0.7A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 700 mA
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
  • Power - Max: 600 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
pacchetto: -
Request a Quote
700 mA
25 V
600mV @ 70mA, 700mA
100nA
200 @ 100mA, 1V
600 mW
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92
JANSF2N3439U4
Microchip Technology

RH POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U4
pacchetto: -
Request a Quote
1 A
350 V
500mV @ 4mA, 50mA
2µA
40 @ 20mA, 10V
800 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U4
JANTXV2N3741U4
Microchip Technology

TRANS PNP 80V 4A U4

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 1.25mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
  • Power - Max: 25 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U4
pacchetto: -
Request a Quote
4 A
80 V
600mV @ 1.25mA, 1A
10µA
30 @ 250mA, 1V
25 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U4
JANTX2N2945AUB
Microchip Technology

TRANS PNP 20V 0.1A UB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
  • Power - Max: 400 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: -
Request a Quote
100 mA
20 V
-
10µA (ICBO)
70 @ 1mA, 500mV
400 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
2N6274
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 4V
  • Power - Max: 250 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
pacchetto: -
Request a Quote
50 A
100 V
3V @ 10A, 50A
50µA
50 @ 1A, 4V
250 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
JANSL2N2907AL
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
pacchetto: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
BC858BM3-TP
Micro Commercial Co

Interface

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 265 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SOT-723
pacchetto: -
Request a Quote
100 mA
30 V
650mV @ 5mA, 100mA
1mA
200 @ 2mA, 5V
265 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
BC858BW-TP
Micro Commercial Co

Interface

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 150 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
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100 mA
30 V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
150 mW
100MHz
-65°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
CMPT3904E-TR-PBFREE
Central Semiconductor Corp

TRANS NPN 40V 0.2A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 350 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: -
Azione407.991
200 mA
40 V
200mV @ 5mA, 50mA
-
100 @ 10mA, 1V
350 mW
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2N2906-PBFREE
Central Semiconductor Corp

TRANS PNP 40V 0.6A TO18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 1.8 W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
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600 mA
40 V
1.6V @ 50mA, 500mA
20nA (ICBO)
40 @ 150mA, 10V
1.8 W
200MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
FMMT493AW
Diodes Incorporated

TRANS NPN 100V 1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23 (Type DN)
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1 A
100 V
600mV @ 100mA, 1A
100nA
100 @ 250mA, 10V
500 mW
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23 (Type DN)