Pagina 8 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - RF

Record 1.633
Pagina  8/59
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MRF8372GR2
Microsemi Corporation

TRANS NPN 16V 200MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9.5dB
  • Power - Max: 2.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.100
16V
870MHz
-
8dB ~ 9.5dB
2.2W
30 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot 2SC4536-T1-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2dB @ 1GHz
  • Gain: 7dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacchetto: TO-243AA
Azione221.112
15V
5.5GHz
2dB @ 1GHz
7dB
2W
40 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
MS1337
Microsemi Corporation

TRANS RF BIPO 70W 8A M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
pacchetto: M113
Azione3.568
18V
175MHz
-
10dB
70W
20 @ 250mA, 5V
8A
200°C (TJ)
Chassis Mount
M113
M113
MAX2601ESA-T
Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione2.416
15V
1GHz
3.3dB @ 836MHz
11.6dB
6.4W
100 @ 250mA, 3V
1.2A
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot EC4H08C-TL-H
ON Semiconductor

TRANS NPN 3.5V 15MA ECSP1008-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 24GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 17dB
  • Power - Max: 50mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-UFDFN
  • Supplier Device Package: 4-ECSP1008
pacchetto: 4-UFDFN
Azione120.000
3.5V
24GHz
1.5dB @ 2GHz
17dB
50mW
70 @ 5mA, 1V
15mA
150°C (TJ)
Surface Mount
4-UFDFN
4-ECSP1008
hot AT-41586-BLKG
Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
  • Gain: 8dB ~ 17dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-86
  • Supplier Device Package: 86 Plastic
pacchetto: SOT-86
Azione12.960
12V
8GHz
1.4dB ~ 3dB @ 1GHz ~ 4GHz
8dB ~ 17dB
500mW
30 @ 10mA, 8V
60mA
150°C (TJ)
Surface Mount
SOT-86
86 Plastic
NE85633-R25-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.840
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
125 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot NE68518-T1-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 11dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacchetto: SC-82A, SOT-343
Azione7.872
6V
12GHz
1.5dB @ 2GHz
11dB
150mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
KSC1674CYBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione6.384
20V
600MHz
3dB ~ 5dB @ 100MHz
-
250mW
120 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
KSC2786RTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: 18dB ~ 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
  • Supplier Device Package: TO-92S
pacchetto: TO-226-3, TO-92-3 Short Body (Formed Leads)
Azione3.168
20V
600MHz
3dB ~ 5dB @ 100MHz
18dB ~ 22dB
250mW
40 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body (Formed Leads)
TO-92S
KSC2786OBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: 18dB ~ 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
pacchetto: TO-226-3, TO-92-3 Short Body
Azione2.816
20V
600MHz
3dB ~ 5dB @ 100MHz
18dB ~ 22dB
250mW
70 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
NE461M02-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
  • Gain: 8.3dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacchetto: TO-243AA
Azione6.448
15V
-
1.5dB ~ 2dB @ 500MHz ~ 1GHz
8.3dB
2W
60 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
JTDB75
Microsemi Corporation

TRANS RF BIPO 220W 8A 55AW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 8.2dB
  • Power - Max: 220W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
pacchetto: 55AW
Azione5.760
55V
960MHz ~ 1.215GHz
-
7dB ~ 8.2dB
220W
20 @ 1A, 5V
8A
200°C (TJ)
Chassis Mount
55AW
55AW
2731-20
Microsemi Corporation

TRANS RF BIPO 70W 1.85 55KCR-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 2.7GHz ~ 3.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.2dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1.85A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KCR-1
  • Supplier Device Package: 55KCR-1
pacchetto: 55KCR-1
Azione2.896
65V
2.7GHz ~ 3.1GHz
-
8.2dB
70W
-
1.85A
200°C (TJ)
Chassis Mount
55KCR-1
55KCR-1
1090MP
Microsemi Corporation

TRANS RF BIPO 250W 6.5A 55FW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.08dB ~ 8.5dB
  • Power - Max: 250W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 6.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
pacchetto: 55FW-1
Azione7.776
65V
1.025GHz ~ 1.15GHz
-
8.08dB ~ 8.5dB
250W
15 @ 500mA, 5V
6.5A
200°C (TJ)
Chassis Mount
55FW-1
55FW-1
hot HFA3096BZ96
Intersil

IC TRANS ARRAY NPN/PNP 16-SOIC

  • Transistor Type: 3 NPN + 2 PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V, 15V
  • Frequency - Transition: 8GHz, 5.5GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione5.184
12V, 15V
8GHz, 5.5GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V / 20 @ 10mA, 2V
65mA
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
SRF4427
Microsemi Corporation

TRANS RF BIPO 1.5W 400MA 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 17dB ~ 18dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.672
18V
1.3GHz
-
17dB ~ 18dB
1.5W
20 @ 150mA, 5V
400mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot 2SC4713KT146R
Rohm Semiconductor

TRANS RF SW 6V 50MA SMT3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione15.624
6V
800MHz
-
-
200mW
180 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
hot MRF10031
M/A-Com Technology Solutions

TRANS NPN 30W 960MHZ-1215MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 30W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 332A-03
  • Supplier Device Package: 332A-03, Style 2
pacchetto: 332A-03
Azione6.320
55V
-
-
9.5dB
30W
20 @ 500mA, 5V
3A
200°C (TJ)
Chassis Mount
332A-03
332A-03, Style 2
hot AT-32063-TR1G
Broadcom Limited

IC TRANS NPN BIPOLAR SOT363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
  • Gain: 12.5dB ~ 14.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V
  • Current - Collector (Ic) (Max): 32mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione2.413.200
5.5V
-
1.1dB ~ 1.4dB @ 900MHz
12.5dB ~ 14.5dB
150mW
50 @ 5mA, 2.7V
32mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
BFU760F,115
NXP

TRANS RF NPN 2.8V 70MA SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
  • Gain: -
  • Power - Max: 220mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
pacchetto: SOT-343F
Azione4.080
2.8V
45GHz
0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
-
220mW
155 @ 10mA, 2V
70mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
2SC48350RL
Panasonic Electronic Components

TRANS NPN 10VCEO 80MA SMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 800MHz
  • Gain: 11dB ~ 14dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
pacchetto: SC-70, SOT-323
Azione26.304
10V
6GHz
1.3dB ~ 2dB @ 800MHz
11dB ~ 14dB
150mW
80 @ 20mA, 8V
80mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SMini3-G1
hot HFA3096BZ
Intersil

IC TRANSISTOR ARRAY UHF 16-SOIC

  • Transistor Type: 3 NPN + 2 PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V, 15V
  • Frequency - Transition: 8GHz, 5.5GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione7.904
12V, 15V
8GHz, 5.5GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V / 20 @ 10mA, 2V
65mA
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
hot 2N5109
Central Semiconductor Corp

TRANS RF NPN 20V 400MA TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione19.092
20V
1.2GHz
3dB @ 200MHz
-
1W
40 @ 50mA, 15V
400mA
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
NTE195A
NTE Electronics, Inc

RF TRANS NPN 70V TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 400mA, 2V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: -
Request a Quote
70V
-
-
10dB
8W
30 @ 400mA, 2V
1.5A
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
MS1076A
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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MMBTH10LT1
onsemi

TRANS SS VHF NPN 25V SOT23

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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CP229-2N5109-CT20
Central Semiconductor Corp

RF TRANSISTOR TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: 11dB
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
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20V
1.2GHz
3dB @ 200MHz
11dB
-
40 @ 50mA, 15V
400mA
-65°C ~ 200°C (TJ)
Surface Mount
Die
Die