Pagina 6 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - RF

Record 1.633
Pagina  6/59
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFS 17P E6433
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione7.552
15V
1.4GHz
3.5dB ~ 5dB @ 800MHz
-
280mW
40 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
MRF4427R1
Microsemi Corporation

TRANS NPN 20V 400MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 20dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-dBGA (2x1.5)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.488
20V
-
-
20dB
1.5W
10 @ 10mA, 5V
400mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-dBGA (2x1.5)
MS2393
Microsemi Corporation

TRANS RF BIPO 87.5W 11A M138

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.2dB
  • Power - Max: 583W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V
  • Current - Collector (Ic) (Max): 11A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M138
  • Supplier Device Package: M138
pacchetto: M138
Azione3.104
65V
1.025GHz ~ 1.15GHz
-
8.2dB
583W
5 @ 300mA, 5V
11A
200°C (TJ)
Chassis Mount
M138
M138
hot MS2213
Microsemi Corporation

TRANS RF BIPO 75W 3.5A M214

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.8dB
  • Power - Max: 75W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 3.5A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M214
  • Supplier Device Package: M214
pacchetto: M214
Azione4.544
55V
960MHz ~ 1.215GHz
-
7.8dB
75W
15 @ 1A, 5V
3.5A
250°C (TJ)
Chassis Mount
M214
M214
MAX2602ESA-T
Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione5.680
15V
1GHz
3.3dB @ 836MHz
11.6dB
6.4W
100 @ 250mA, 3V
1.2A
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
NE68133-T1B-R34-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.440
10V
9GHz
1.2dB @ 1GHz
13dB
200mW
80 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NE685M33-T3-A
CEL

TRANSISTOR NPN 2GHZ M33

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SuperMiniMold (M33)
pacchetto: 3-SMD, Flat Leads
Azione6.336
6V
12GHz
1.5dB ~ 2.5dB @ 2GHz
-
130mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-SuperMiniMold (M33)
NE68019-A
CEL

RF TRANSISTOR NPN SOT-523

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 9.6dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
pacchetto: SOT-523
Azione2.112
10V
10GHz
1.9dB @ 2GHz
9.6dB
100mW
80 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
hot SD1488
STMicroelectronics

TRANSISTOR NPN RF BIPO VHF 6LEAD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 5.8dB
  • Power - Max: 117W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M111
  • Supplier Device Package: M111
pacchetto: M111
Azione4.192
16V
-
-
5.8dB
117W
20 @ 1A, 5V
8A
200°C (TJ)
Surface Mount
M111
M111
SD1446
STMicroelectronics

TRANSISTOR NPN RF BIPO UHF M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 183W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M113
  • Supplier Device Package: M113
pacchetto: M113
Azione5.728
18V
-
-
10dB
183W
10 @ 5A, 5V
12A
200°C (TJ)
Surface Mount
M113
M113
hot HFA3127B
Intersil

IC TRANSISTOR ARRAY NPN 16-SOIC

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione46.236
12V
8GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V
65mA
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
NE85633-T1B
CEL

TRANS NPN 1GHZ SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione7.216
12V
7GHz
1.4dB ~ 2dB @ 1GHz
9dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
UTV080
Microsemi Corporation

TRANS RF BIPO 65W 2.5A 55JV2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 28V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB ~ 10dB
  • Power - Max: 65W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Channel, DIN Rail Mount
  • Package / Case: 55JV
  • Supplier Device Package: 55JV
pacchetto: 55JV
Azione7.824
28V
470MHz ~ 860MHz
-
9dB ~ 10dB
65W
10 @ 500mA, 5V
2.5A
200°C (TJ)
Channel, DIN Rail Mount
55JV
55JV
MS3022
Microsemi Corporation

TRANS RF BIPO 7W 200MA M210

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 1GHz ~ 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 7W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M210
  • Supplier Device Package: M210
pacchetto: M210
Azione2.288
45V
1GHz ~ 2GHz
-
7dB
7W
15 @ 100mA, 5V
200mA
200°C (TJ)
Chassis Mount
M210
M210
BFG520,235
NXP

TRANS RF NPN 9GHZ 15V SOT143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
pacchetto: TO-253-4, TO-253AA
Azione7.104
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
300mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
2SC5347AF-TD-E
ON Semiconductor

TRANS NPN BIPO HI FREQ PCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.7GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 8dB
  • Power - Max: 1.3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
pacchetto: TO-243AA
Azione2.032
12V
4.7GHz
1.8dB @ 1GHz
8dB
1.3W
135 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
TO-243AA
PCP
MCH4016-TL-H
ON Semiconductor

TRANS NPN 12V 30MA MCPH4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 18dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-MCPH
pacchetto: 4-SMD, Flat Leads
Azione4.160
12V
10GHz
1.2dB @ 1GHz
18dB
350mW
60 @ 5mA, 5V
30mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-MCPH
MCH4015-TL-H
ON Semiconductor

TRANS NPN 12V 100MA MCPH4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-MCPH
pacchetto: 4-SMD, Flat Leads
Azione6.608
12V
10GHz
1.2dB @ 1GHz
17dB
450mW
60 @ 50mA, 5V
100mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-MCPH
hot 2SC5065-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 500MHz
  • Gain: -
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
pacchetto: SC-70, SOT-323
Azione180.000
12V
7GHz
1dB @ 500MHz
-
100mW
80 @ 10mA, 5V
30mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
hot ZUMTS17NTA
Diodes Incorporated

TRANS RF 3.2GHZ 11V SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 11V
  • Frequency - Transition: 3.2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: SC-70, SOT-323
Azione2.340.000
11V
3.2GHz
-
-
330mW
56 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
BFR93AWH6327XTSA1
Infineon Technologies

TRANS RF NPN 12V 90MA SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 15.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
pacchetto: SC-70, SOT-323
Azione117.048
12V
6GHz
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
10.5dB ~ 15.5dB
300mW
70 @ 30mA, 8V
90mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BFU520WX
NXP

TRANS RF NPN 12V 30MA SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
pacchetto: SC-70, SOT-323
Azione249.498
12V
10GHz
0.6dB @ 900MHz
18.5dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
BFR949L3E6327
Infineon Technologies

RF BIPOLAR TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
  • Gain: 21.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3-1
pacchetto: -
Request a Quote
10V
9GHz
1dB ~ 2.5dB @ 1GHz
21.5dB
250mW
100 @ 5mA, 6V
50mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3-1
PH8906
MACOM Technology Solutions

TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
PH1214-55EL
MACOM Technology Solutions

TRANSISTOR,BIPOLAR,55W,28V,1.20-

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 58V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.6dB
  • Power - Max: 220W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 7A
  • Operating Temperature: 200°C
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: -
pacchetto: -
Request a Quote
58V
1.4GHz
-
6.6dB
220W
-
7A
200°C
Chassis Mount
2L-FLG
-
SD1015
Microsemi Corporation

RF TRANS NPN 18V 150MHZ M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 10W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C
  • Mounting Type: Stud Mount
  • Package / Case: M135
  • Supplier Device Package: M135
pacchetto: -
Request a Quote
18V
150MHz
-
10dB
10W
35 @ 200mA, 5V
1A
200°C
Stud Mount
M135
M135
MMBT918_R1_00001
Panjit International Inc.

VHF/UHF NPN SILICON TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: -
Azione8.802
15V
600MHz
-
-
225mW
20 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MX0912B351Y
Ampleon USA Inc.

RF POWER BIPOLAR TRANSISTOR, 1-E

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 960W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 21A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-439A
  • Supplier Device Package: CDFM2
pacchetto: -
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20V
1.215GHz
-
8dB
960W
-
21A
200°C (TJ)
Chassis Mount
SOT-439A
CDFM2