Pagina 58 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 807
Language Translation

* Please refer to the English Version as our Official Version.

Transistor - Bipolari (BJT) - RF

Record 1.633
Pagina  58/59
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP420E6433HTMA1
Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 21dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: SC-82A, SOT-343
Azione2.432
5V
25GHz
1.1dB @ 1.8GHz
21dB
160mW
60 @ 20mA, 4V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
2SC4957-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 11dB
  • Power - Max: 180mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacchetto: TO-253-4, TO-253AA
Azione3.344
6V
12GHz
1.5dB @ 2GHz
11dB
180mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot 2SC3357-T1-A
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacchetto: TO-243AA
Azione3.705.984
12V
6.5GHz
1.8dB @ 1GHz
10dB
1.2W
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
hot MRF586
Microsemi Corporation

TRANS RF BIPO 1W 200MA TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 17V
  • Frequency - Transition: 3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacchetto: TO-205AD, TO-39-3 Metal Can
Azione11.112
17V
3GHz
-
13.5dB
1W
40 @ 50mA, 5V
200mA
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
2SC5231A-9-TL-E
ON Semiconductor

TRANS NPN BIPO 70MA 10V SMCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB ~ 8.5dB @ 1GHz
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Gull Wing
  • Supplier Device Package: SMCP
pacchetto: 3-SMD, Gull Wing
Azione4.384
10V
7GHz
1dB @ 1GHz
12dB ~ 8.5dB @ 1GHz
100mW
135 @ 20mA, 5V
70mA
150°C (TJ)
Surface Mount
3-SMD, Gull Wing
SMCP
ZUMTS17HTA
Diodes Incorporated

TRANSISTOR RF NPN SC70-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Gain: -
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: SC-70, SOT-323
Azione3.936
15V
1.3GHz
4.5dB @ 500MHz
-
330mW
70 @ 2mA, 1V
25mA
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
NE851M33-T3-A
CEL

TRANSISTOR NPN 2GHZ M33

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SuperMiniMold (M33)
pacchetto: 3-SMD, Flat Leads
Azione3.344
5.5V
4.5GHz
1.9dB ~ 2.5dB @ 2GHz
-
130mW
100 @ 5mA, 1V
100mA
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-SuperMiniMold (M33)
NE663M04-T2-A
CEL

RF TRANSISTOR NPN SOT-343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.3V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
  • Gain: 14dB
  • Power - Max: 190mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
pacchetto: SOT-343F
Azione6.128
3.3V
15GHz
1.2dB @ 2GHz
14dB
190mW
50 @ 10mA, 2V
100mA
150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
MAX2601ESA
Maxim Integrated

IC TRANS 3.6V 1W RF PWR 8-SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione3.760
15V
1GHz
3.3dB @ 836MHz
11.6dB
6.4W
100 @ 250mA, 3V
1.2A
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
BFG425W,135
NXP

TRANS RF NPN 25GHZ 4.5V SOT343R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
  • Gain: 20dB
  • Power - Max: 135mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
pacchetto: SC-82A, SOT-343
Azione3.584
4.5V
25GHz
0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
20dB
135mW
50 @ 25mA, 2V
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
BFR93AR,215
NXP

TRANS NPN 35MA 12V 6GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.048
12V
6GHz
1.9dB ~ 3dB @ 1GHz ~ 2GHz
-
300mW
40 @ 30mA, 5V
35mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
1214-300M
Microsemi Corporation

TRANS RF BIPO 88W 4A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 88W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
pacchetto: 55ST
Azione6.656
50V
1.2GHz ~ 1.4GHz
-
7dB
88W
20 @ 500mA, 5V
4A
200°C (TJ)
Chassis Mount
55ST
55ST
SD1536-08
Microsemi Corporation

TRANS RF BIPO 292W 10A M105

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.4dB
  • Power - Max: 292W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 10A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M105
  • Supplier Device Package: M105
pacchetto: M105
Azione3.792
65V
1.025GHz ~ 1.15GHz
-
8.4dB
292W
5 @ 100mA, 5V
10A
200°C (TJ)
Chassis Mount
M105
M105
JANTX2N2857
Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 12.5dB ~ 21dB @ 450MHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
pacchetto: TO-72-3 Metal Can
Azione3.712
15V
500MHz
4.5dB @ 450MHz
12.5dB ~ 21dB @ 450MHz
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
LPT16ED
Skyworks Solutions Inc.

TRANSISTOR NPN BIPOLAR SIGE

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4V
  • Frequency - Transition: 16GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 5.2dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione3.584
4V
16GHz
-
5.2dB
250mW
50 @ 20mA, 2V
80mA
150°C (TJ)
Surface Mount
Die
Die
BFR 360L3 E6765
Infineon Technologies

TRANSISTOR NPN RF 6V TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
  • Gain: 11.5dB ~ 16dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
pacchetto: SC-101, SOT-883
Azione2.000
9V
14GHz
1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
11.5dB ~ 16dB
210mW
90 @ 15mA, 3V
35mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BFU768F,115
NXP

TRANS RF NPN 2.8V 70MA DFP4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz
  • Gain: 13.1dB
  • Power - Max: 220mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
pacchetto: SOT-343F
Azione6.672
2.8V
-
1.1dB @ 2.4GHz
13.1dB
220mW
155 @ 10mA, 2V
70mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
PBR941B,215
NXP

TRANSISTOR NPN UHF 50MA SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
  • Gain: -
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione26.562
10V
9GHz
1.5dB ~ 2.5dB @ 1GHz
-
360mW
100 @ 5mA, 6V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
MAX2601ESA+
Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Azione9.840
15V
1GHz
3.3dB @ 836MHz
11.6dB
6.4W
100 @ 250mA, 3V
1.2A
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
BFU550AR
NXP

TRANS RF NPN 12V 50MA TO-236AB

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione340.728
12V
11GHz
0.6dB @ 900MHz
18dB
450mW
60 @ 15mA, 8V
50mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
NTE2688
NTE Electronics, Inc

RF TRANS NPN 450V 20MHZ TO220

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Frequency - Transition: 20MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 60W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacchetto: -
Request a Quote
450V
20MHz
-
-
60W
10 @ 4A, 5V
8A
150°C (TJ)
Through Hole
TO-220-3
TO-220
2SC5606-A
CEL

RF TRANS NPN 3.3V 21GHZ SOT523

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.3V
  • Frequency - Transition: 21GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
  • Gain: 12.5dB
  • Power - Max: 115mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: -
pacchetto: -
Request a Quote
3.3V
21GHz
1.2dB @ 2GHz
12.5dB
115mW
60 @ 5mA, 2V
35mA
150°C (TJ)
Surface Mount
SOT-523
-
MRFC545
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NESG260234-T1-AZ
CEL

TRANS NPN 460MHZ SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9.2V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1.9W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
  • Current - Collector (Ic) (Max): 600mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: 3-PowerMiniMold
pacchetto: -
Request a Quote
9.2V
-
-
-
1.9W
80 @ 100mA, 3V
600mA
-
Surface Mount
TO-243AA
3-PowerMiniMold
RTN7735PL
Infineon Technologies

RTN7735PL - RF TRANSMITTER

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
61045
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC5820WU-TL-E
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4V
  • Frequency - Transition: 20GHz
  • Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
  • Gain: 17.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
pacchetto: -
Request a Quote
4V
20GHz
1.15dB @ 1.8GHz
17.5dB
100mW
70 @ 20mA, 2V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
MS2502W
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-