Pagina 55 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MS1007	Microsemi Corporation	TRANS RF BIPO 233W 10A M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 233W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	pacchetto: M174	Azione5.328	55V	30MHz	-	14dB	233W	18 @ 1.4A, 6V	10A	200°C (TJ)	Chassis Mount	M174	M174
2003	Microsemi Corporation	TRANS HBT RF BIPOLAR 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 12W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT-1 Supplier Device Package: 55BT-1	pacchetto: 55BT-1	Azione3.024	50V	2GHz	-	8.5dB	12W	10 @ 100mA, 5V	500mA	200°C (TJ)	Chassis Mount	55BT-1	55BT-1
2N5109	Microsemi Corporation	TRANS RF NPN 2.5W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 2.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	pacchetto: TO-205AD, TO-39-3 Metal Can	Azione19.092	20V	1.2GHz	-	12dB	2.5W	40 @ 50mA, 15V	400mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
BFG520/X,215	NXP	TRANS RF NPN 9GHZ 15V SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	pacchetto: TO-253-4, TO-253AA	Azione3.840	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	300mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
2SC3937G0L	Panasonic Electronic Components	TRANS NPN 10VCEO 80MA SMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 800MHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	pacchetto: SC-85	Azione3.600	10V	6GHz	1dB ~ 1.7dB @ 800MHz	13dB	150mW	50 @ 20mA, 8V	80mA	150°C (TJ)	Surface Mount	SC-85	SMini3-F2
CA3127MZ	Intersil	TRANSISTOR ARRAY NPN 16-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.15GHz Noise Figure (dB Typ @ f): 3.5dB @ 100MHz Gain: 27dB ~ 30dB Power - Max: 85mW DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	pacchetto: 16-SOIC (0.154", 3.90mm Width)	Azione183.948	15V	1.15GHz	3.5dB @ 100MHz	27dB ~ 30dB	85mW	35 @ 5mA, 6V	20mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
BF959RL1G	ON Semiconductor	TRANS RF NPN 20V 100MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Azione6.544	20V	700MHz	3dB @ 200MHz	-	625mW	40 @ 20mA, 10V	100mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
NE856M03-A	CEL	TRANSISTOR NPN 1GHZ MINIMOLD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2.5dB @ 1GHz Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: 3-SuperMiniMold (M03)	pacchetto: SOT-623F	Azione3.568	12V	4.5GHz	1.4dB ~ 2.5dB @ 1GHz	-	125mW	80 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SOT-623F	3-SuperMiniMold (M03)
NE85633-R24-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione5.440	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	80 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE85630-T1-R25-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	pacchetto: SC-70, SOT-323	Azione6.416	12V	4.5GHz	1.2dB @ 1GHz	9dB	150mW	125 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
NE85630-T1-R24-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	pacchetto: SC-70, SOT-323	Azione7.648	12V	4.5GHz	1.2dB @ 1GHz	9dB	150mW	70 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
NE68830-T1-A	CEL	TRANS NPN 2GHZ SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	pacchetto: SC-70, SOT-323	Azione53.040	6V	4.5GHz	1.7dB ~ 2.5dB @ 2GHz	-	150mW	80 @ 3mA, 1V	100mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
NE687M03-T1-A	CEL	TRANSISTOR NPN 2GHZ MINIMOLD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 2GHz Gain: - Power - Max: 90mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: 3-SuperMiniMold (M03)	pacchetto: SOT-623F	Azione4.704	3V	14GHz	1.3dB ~ 2dB @ 2GHz	-	90mW	70 @ 20mA, 2V	30mA	150°C (TJ)	Surface Mount	SOT-623F	3-SuperMiniMold (M03)
HFA3127R96	Intersil	IC TRANS ARRAY 5X NPN 16QFN Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	pacchetto: 16-VFQFN Exposed Pad	Azione7.904	12V	8GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V	65mA	175°C (TJ)	Surface Mount	16-VFQFN Exposed Pad	16-QFN (3x3)
MSC1350M	Microsemi Corporation	TRANS RF BIPO 720W 19.8A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 7.1dB Power - Max: 720W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 19.8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	pacchetto: M218	Azione6.816	65V	1.025GHz ~ 1.15GHz	-	7dB ~ 7.1dB	720W	15 @ 1A, 5V	19.8A	200°C (TJ)	Chassis Mount	M218	M218
AT-32032-TR2G	Broadcom Limited	TRANS NPN BIPO 5.5V 30MA SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 13.5dB ~ 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 2.7V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3	pacchetto: SC-70, SOT-323	Azione4.848	5.5V	-	1dB ~ 1.3dB @ 900MHz	13.5dB ~ 15dB	200mW	70 @ 5mA, 2.7V	40mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3
BFU530AVL	NXP	TRANS RF NPN 12V 40MA TO-236AB Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 12dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V Current - Collector (Ic) (Max): 40mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione3.168	12V	11GHz	1.1dB @ 1.8GHz	12dB	450mW	60 @ 10mA, 8V	40mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFU520VL	NXP	TRANS RF NPN 12V 30MA SOT-143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10.5GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 17.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Current - Collector (Ic) (Max): 30mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	pacchetto: TO-253-4, TO-253AA	Azione5.440	12V	10.5GHz	1.1dB @ 1.8GHz	17.5dB	450mW	60 @ 5mA, 8V	30mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
BFP843H6327XTSA1	Infineon Technologies	TRANSISTOR RF NPN AMP SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.25V Frequency - Transition: - Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz Gain: 13.5dB ~ 24.5dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V Current - Collector (Ic) (Max): 55mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	pacchetto: SC-82A, SOT-343	Azione4.064	2.25V	-	0.9dB ~ 1.85dB @ 450MHz ~ 10GHz	13.5dB ~ 24.5dB	125mW	150 @ 15mA, 1.8V	55mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
2SA1748GRL	Panasonic Electronic Components	TRANS PNP 50VCEO 50MA SMINI-3 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B	pacchetto: SC-85	Azione5.600	50V	250MHz	-	-	150mW	250 @ 2mA, 10V	50mA	150°C (TJ)	Surface Mount	SC-85	SMini3-F2-B
2SC393700L	Panasonic Electronic Components	TRANS NPN 10VCEO 80MA SMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 800MHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	pacchetto: SC-70, SOT-323	Azione25.380	10V	6GHz	1dB ~ 1.7dB @ 800MHz	13dB	150mW	50 @ 20mA, 8V	80mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SMini3-G1
MMBTH10-4LT1G	ON Semiconductor	TRANS VHF/UHF NPN 25V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione569.856	25V	800MHz	-	-	225mW	120 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
CM5583	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 2V Current - Collector (Ic) (Max): 500mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	pacchetto: -	Request a Quote	30V	1.3GHz	-	-	1W	25 @ 100mA, 2V	500mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MT3S113P-TE12L-F	Toshiba Semiconductor and Storage	RF TRANS NPN 5.3V 7.7GHZ PW-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 7.7GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 10.5dB Power - Max: 1.6W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	pacchetto: -	Azione18	5.3V	7.7GHz	1.45dB @ 1GHz	10.5dB	1.6W	200 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI
60180	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NTE16003	NTE Electronics, Inc	T-NPN SI RF PO=7.5 WATTS Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 11.6W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.5A Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-212MA, TO-210AB, TO-60-4, Stud Supplier Device Package: TO-60	pacchetto: -	Request a Quote	40V	500MHz	-	-	11.6W	-	1.5A	-65°C ~ 200°C (TJ)	Stud Mount	TO-212MA, TO-210AB, TO-60-4, Stud	TO-60
C25-28A	Microsemi Corporation	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NTE235	NTE Electronics, Inc	RF TRANS NPN 75V 150MHZ TO220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	pacchetto: -	Request a Quote	75V	150MHz	-	-	1.2W	25 @ 500mA, 5V	3A	150°C (TJ)	Through Hole	TO-220-3	TO-220

MS1007

Microsemi Corporation

TRANS RF BIPO 233W 10A M174

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 233W
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V
Current - Collector (Ic) (Max): 10A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M174
Supplier Device Package: M174

pacchetto: M174

Azione5.328

55V

30MHz

-

14dB

233W

18 @ 1.4A, 6V

10A

200°C (TJ)

Chassis Mount

M174

2003

Microsemi Corporation

TRANS HBT RF BIPOLAR 55BT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 12W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT-1
Supplier Device Package: 55BT-1

pacchetto: 55BT-1

Azione3.024

50V

2GHz

-

8.5dB

12W

10 @ 100mA, 5V

500mA

200°C (TJ)

Chassis Mount

55BT-1

2N5109

Microsemi Corporation

TRANS RF NPN 2.5W 400MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 2.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

pacchetto: TO-205AD, TO-39-3 Metal Can

Azione19.092

20V

1.2GHz

-

12dB

2.5W

40 @ 50mA, 15V

400mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

BFG520/X,215

NXP

TRANS RF NPN 9GHZ 15V SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

pacchetto: TO-253-4, TO-253AA

Azione3.840

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

300mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

2SC3937G0L

Panasonic Electronic Components

TRANS NPN 10VCEO 80MA SMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 800MHz
Gain: 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2

pacchetto: SC-85

Azione3.600

10V

6GHz

1dB ~ 1.7dB @ 800MHz

13dB

150mW

50 @ 20mA, 8V

80mA

150°C (TJ)

Surface Mount

SC-85

SMini3-F2

CA3127MZ

Intersil

TRANSISTOR ARRAY NPN 16-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.15GHz
Noise Figure (dB Typ @ f): 3.5dB @ 100MHz
Gain: 27dB ~ 30dB
Power - Max: 85mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.154", 3.90mm Width)

Azione183.948

15V

1.15GHz

3.5dB @ 100MHz

27dB ~ 30dB

85mW

35 @ 5mA, 6V

20mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

BF959RL1G

ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Azione6.544

20V

700MHz

3dB @ 200MHz

-

625mW

40 @ 20mA, 10V

100mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

NE856M03-A

CEL

TRANSISTOR NPN 1GHZ MINIMOLD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.5dB @ 1GHz
Gain: -
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: 3-SuperMiniMold (M03)

pacchetto: SOT-623F

Azione3.568

12V

4.5GHz

1.4dB ~ 2.5dB @ 1GHz

-

125mW

80 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SOT-623F

3-SuperMiniMold (M03)

NE85633-R24-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione5.440

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

80 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE85630-T1-R25-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

pacchetto: SC-70, SOT-323

Azione6.416

12V

4.5GHz

1.2dB @ 1GHz

9dB

150mW

125 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

NE85630-T1-R24-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

pacchetto: SC-70, SOT-323

Azione7.648

12V

4.5GHz

1.2dB @ 1GHz

9dB

150mW

70 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

NE68830-T1-A

CEL

TRANS NPN 2GHZ SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

pacchetto: SC-70, SOT-323

Azione53.040

6V

4.5GHz

1.7dB ~ 2.5dB @ 2GHz

-

150mW

80 @ 3mA, 1V

100mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

NE687M03-T1-A

CEL

TRANSISTOR NPN 2GHZ MINIMOLD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 2GHz
Gain: -
Power - Max: 90mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: 3-SuperMiniMold (M03)

pacchetto: SOT-623F

Azione4.704

3V

14GHz

1.3dB ~ 2dB @ 2GHz

-

90mW

70 @ 20mA, 2V

30mA

150°C (TJ)

Surface Mount

SOT-623F

3-SuperMiniMold (M03)

HFA3127R96

Intersil

IC TRANS ARRAY 5X NPN 16QFN

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-QFN (3x3)

pacchetto: 16-VFQFN Exposed Pad

Azione7.904

12V

8GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V

65mA

175°C (TJ)

Surface Mount

16-VFQFN Exposed Pad

16-QFN (3x3)

MSC1350M

Microsemi Corporation

TRANS RF BIPO 720W 19.8A M218

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 7.1dB
Power - Max: 720W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 19.8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

pacchetto: M218

Azione6.816

65V

1.025GHz ~ 1.15GHz

-

7dB ~ 7.1dB

720W

15 @ 1A, 5V

19.8A

200°C (TJ)

Chassis Mount

M218

AT-32032-TR2G

Broadcom Limited

TRANS NPN BIPO 5.5V 30MA SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 13.5dB ~ 15dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 2.7V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3

pacchetto: SC-70, SOT-323

Azione4.848

5.5V

-

1dB ~ 1.3dB @ 900MHz

13.5dB ~ 15dB

200mW

70 @ 5mA, 2.7V

40mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3

BFU530AVL

NXP

TRANS RF NPN 12V 40MA TO-236AB

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 12dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione3.168

12V

11GHz

1.1dB @ 1.8GHz

12dB

450mW

60 @ 10mA, 8V

40mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFU520VL

NXP

TRANS RF NPN 12V 30MA SOT-143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 17.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

pacchetto: TO-253-4, TO-253AA

Azione5.440

12V

10.5GHz

1.1dB @ 1.8GHz

17.5dB

450mW

60 @ 5mA, 8V

30mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

BFP843H6327XTSA1

Infineon Technologies

TRANSISTOR RF NPN AMP SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.25V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Gain: 13.5dB ~ 24.5dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Current - Collector (Ic) (Max): 55mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

pacchetto: SC-82A, SOT-343

Azione4.064

2.25V

-

0.9dB ~ 1.85dB @ 450MHz ~ 10GHz

13.5dB ~ 24.5dB

125mW

150 @ 15mA, 1.8V

55mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

2SA1748GRL

Panasonic Electronic Components

TRANS PNP 50VCEO 50MA SMINI-3

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 250MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2-B

pacchetto: SC-85

Azione5.600

50V

250MHz

-

150mW

250 @ 2mA, 10V

50mA

150°C (TJ)

Surface Mount

SC-85

SMini3-F2-B

2SC393700L

Panasonic Electronic Components

TRANS NPN 10VCEO 80MA SMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 800MHz
Gain: 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

pacchetto: SC-70, SOT-323

Azione25.380

10V

6GHz

1dB ~ 1.7dB @ 800MHz

13dB

150mW

50 @ 20mA, 8V

80mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SMini3-G1

MMBTH10-4LT1G

ON Semiconductor

TRANS VHF/UHF NPN 25V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione569.856

25V

800MHz

-

225mW

120 @ 4mA, 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

CM5583

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 2V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

pacchetto: -

Request a Quote

30V

1.3GHz

-

1W

25 @ 100mA, 2V

500mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MT3S113P-TE12L-F

Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 7.7GHZ PW-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.3V
Frequency - Transition: 7.7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Gain: 10.5dB
Power - Max: 1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

pacchetto: -

Azione18

5.3V

7.7GHz

1.45dB @ 1GHz

10.5dB

1.6W

200 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

TO-243AA

PW-MINI

60180

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

NTE16003

NTE Electronics, Inc

T-NPN SI RF PO=7.5 WATTS

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 11.6W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-212MA, TO-210AB, TO-60-4, Stud
Supplier Device Package: TO-60

pacchetto: -

Request a Quote

40V

500MHz

-

11.6W

-

1.5A

-65°C ~ 200°C (TJ)

Stud Mount

TO-212MA, TO-210AB, TO-60-4, Stud

TO-60

C25-28A

Microsemi Corporation

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

NTE235

NTE Electronics, Inc

RF TRANS NPN 75V 150MHZ TO220

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

pacchetto: -

Request a Quote

75V

150MHz

-

1.2W

25 @ 500mA, 5V

3A

150°C (TJ)

Through Hole

TO-220-3

TO-220