Pagina 49 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - RF

Record 1.633
Pagina  49/59
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP 405F E6327
Infineon Technologies

TRANSISTOR RF NPN 4.5V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 22.5dB
  • Power - Max: 55mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 12mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
pacchetto: 4-SMD, Flat Leads
Azione6.048
5V
25GHz
1.25dB @ 1.8GHz
22.5dB
55mW
60 @ 5mA, 4V
12mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
NE85639-T1-R28-A
CEL

SAME AS 2SC4093 NPN SILICON AMPL

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacchetto: TO-253-4, TO-253AA
Azione3.072
12V
9GHz
1.1dB @ 1GHz
13dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot 2SC4228-T1-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: SC-70, SOT-323
Azione327.360
10V
8GHz
1.9dB @ 2GHz
7.5dB
150mW
50 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
BFY90
Microsemi Corporation

TRANS RF NPN 200MW 50MA TO72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 2.5dB ~ 5dB @ 500MHz
  • Gain: 20dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
pacchetto: TO-206AF, TO-72-4 Metal Can
Azione2.912
15V
1.3GHz
2.5dB ~ 5dB @ 500MHz
20dB
200mW
20 @ 25mA, 1V
50mA
-
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
PN918_D74Z
Fairchild/ON Semiconductor

TRANS RF NPN 15V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione7.664
15V
600MHz
6dB @ 60MHz
15dB
350mW
20 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MPSH11_D27Z
Fairchild/ON Semiconductor

TRANS RF NPN 25V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.928
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
NE97733-A
CEL

RF TRANSISTOR PNP SOT-23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.928
12V
8.5GHz
1.5dB @ 1GHz
12dB
200mW
20 @ 20mA, 8V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot AT-32011-TR1
Broadcom Limited

IC TRANS NPN BIPOLAR SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
  • Gain: 12.5dB ~ 14dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
  • Current - Collector (Ic) (Max): 32mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacchetto: TO-253-4, TO-253AA
Azione101.472
5.5V
-
1dB ~ 1.3dB @ 900MHz
12.5dB ~ 14dB
200mW
70 @ 2mA, 2.7V
32mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
BFG21W,115
NXP

TRANS NPN 15V .5A 18GHZ CMPAK-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 18GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 2V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
pacchetto: SC-82A, SOT-343
Azione3.456
4.5V
18GHz
-
-
600mW
40 @ 200mA, 2V
500mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
BFG94,115
NXP

TRANS NPN 10V 60MA SOT223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 2.7dB ~ 3dB @ 500MHz ~ 1GHz
  • Gain: -
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione6.320
12V
6GHz
2.7dB ~ 3dB @ 500MHz ~ 1GHz
-
700mW
45 @ 30mA, 5V
60mA
175°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BFR340L3E6327XTMA1
Infineon Technologies

TRANSISTOR RF NPN 6V TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
  • Gain: 17.5dB
  • Power - Max: 60mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
pacchetto: SC-101, SOT-883
Azione4.592
9V
14GHz
1.15dB @ 1.8GHz
17.5dB
60mW
90 @ 5mA, 3V
10mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
hot 0204-125
Microsemi Corporation

TRANS RF BIPO 125W 500MHZ 55JT2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: 225MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 8.5dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 16A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55JT
  • Supplier Device Package: 55JT
pacchetto: 55JT
Azione4.816
60V
225MHz ~ 400MHz
-
7dB ~ 8.5dB
270W
20 @ 1A, 5V
16A
200°C (TJ)
Chassis Mount
55JT
55JT
10A030
Microsemi Corporation

TRANS RF BIPO 13W 1.5A 55FT2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 2.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.8dB ~ 8.5dB
  • Power - Max: 13W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
pacchetto: 55FT
Azione7.936
24V
2.5GHz
-
7.8dB ~ 8.5dB
13W
20 @ 200mA, 5V
1.5A
200°C (TJ)
Stud Mount
55FT
55FT
MS1402
Microsemi Corporation

TRANS RF BIPO 5W 750MA M122

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 450MHz ~ 512MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 750mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M122
  • Supplier Device Package: M122
pacchetto: M122
Azione2.896
16V
450MHz ~ 512MHz
-
10dB
5W
20 @ 100mA, 5V
750mA
200°C (TJ)
Chassis Mount
M122
M122
JAN2N4957UB
Microsemi Corporation

TRANS PNP 30V 30MA

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: 3-SMD, No Lead
Azione6.032
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
2SC5551AE-TD-E
ON Semiconductor

TRANS NPN BIPO HI FREQ PCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 3.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1.3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
pacchetto: TO-243AA
Azione3.008
30V
3.5GHz
-
-
1.3W
90 @ 50mA, 5V
300mA
150°C (TJ)
Surface Mount
TO-243AA
PCP
AT-31011-BLKG
Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
  • Gain: 11dB ~ 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 16mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacchetto: TO-253-4, TO-253AA
Azione3.664
5.5V
-
0.9dB ~ 1.2dB @ 900MHz
11dB ~ 13dB
150mW
70 @ 1mA, 2.7V
16mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot 2SC4853A-4-TL-E
ON Semiconductor

TRANS NPN BIPO 15MA 6V MCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.6dB ~ 1.9dB @ 1GHz
  • Gain: 7dB ~ 10.5dB @ 1GHz
  • Power - Max: 90mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 1V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-MCP
pacchetto: SC-70, SOT-323
Azione360.000
6V
5GHz
2.6dB ~ 1.9dB @ 1GHz
7dB ~ 10.5dB @ 1GHz
90mW
90 @ 1mA, 1V
15mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
3-MCP
DSC9G0200L
Panasonic Electronic Components

TRANS RF NPN 20V 15MA SSMINI3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
pacchetto: SC-89, SOT-490
Azione2.512
20V
650MHz
3.3dB @ 100MHz
24dB
125mW
65 @ 1mA, 6V
15mA
150°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F3-B
hot 15GN01CA-TB-E
ON Semiconductor

TRANS NPN VHF-UHF HI FREQ CP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione36.000
8V
1.5GHz
-
-
200mW
200 @ 10mA, 5V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
MRF393
M/A-Com Technology Solutions

TRANS RF NPN 30V 16A 744A-01

  • Transistor Type: 2 NPN (Dual) Common Emitter
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB
  • Power - Max: 100W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 16A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 744A-01
  • Supplier Device Package: 744A-01, Style 1
pacchetto: 744A-01
Azione7.040
30V
-
-
8.5dB
100W
20 @ 1A, 5V
16A
200°C (TJ)
Chassis Mount
744A-01
744A-01, Style 1
BFR 193 E6327
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 10dB ~ 15dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione95.058
12V
8GHz
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
10dB ~ 15dB
580mW
70 @ 30mA, 8V
80mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BFR750L3RHE6327
Infineon Technologies

RF BIPOLAR TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 37GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
  • Gain: 21dB
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
pacchetto: -
Request a Quote
4.7V
37GHz
0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
21dB
360mW
160 @ 60mA, 3V
90mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
2SC4571-T1-A
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 5dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
pacchetto: -
Request a Quote
12V
5GHz
-
5dB
120mW
40 @ 5mA, 5V
60mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
MS2840
Microsemi Corporation

TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NSVF5488SKT3G
onsemi

BIP NPN 70MA 10V FT=7G

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: SOT-623/SSFP
pacchetto: -
Azione23.004
10V
7GHz
1dB @ 1GHz
12dB
100mW
90 @ 20mA, 5V
70mA
-55°C ~ 150°C (TJ)
Surface Mount
SOT-623F
SOT-623/SSFP
NSVF4017SG4T1G
onsemi

RF TRANS NPN 12V 10GHZ SC82FL/

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: SC-82FL/MCPH4
pacchetto: -
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12V
10GHz
1.2dB @ 1GHz
17dB
450mW
60 @ 50mA, 5V
100mA
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Leads
SC-82FL/MCPH4
2SA1702S-AN
onsemi

2SA1702S - SMALL SIGNAL BIPOLAR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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