Pagina 769 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  769/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot VS-MBRD340PBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 40V
  • Capacitance @ Vr, F: 189pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione36.000
40V
3A
600mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
189pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
SE10PD-E3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 780ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-220AA
Azione6.928
200V
1A
1.05V @ 1A
Standard Recovery >500ns, > 200mA (Io)
780ns
5µA @ 200V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
S1PA-E3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 1µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-220AA
Azione3.040
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
1µA @ 50V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
MR856
ON Semiconductor

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
pacchetto: DO-201AA, DO-27, Axial
Azione3.552
600V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
10µA @ 600V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 125°C
hot SBM1040-13
Diodes Incorporated

DIODE SCHOTTKY 40V 10A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 35V
  • Capacitance @ Vr, F: 700pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Powermite?3
  • Supplier Device Package: Powermite 3
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: Powermite?3
Azione2.000.412
40V
10A
510mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 35V
700pF @ 4V, 1MHz
Surface Mount
Powermite?3
Powermite 3
-65°C ~ 150°C
18TQ035STRL
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 18A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 18A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.5mA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.936
35V
18A
600mV @ 18A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.5mA @ 35V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
R7221805ASOO
Powerex Inc.

DIODE MODULE 1.8KV 500A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2.25V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
pacchetto: DO-200AB, B-PUK
Azione4.320
1800V
500A
2.25V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
3µs
50mA @ 1800V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
S320JR
GeneSiC Semiconductor

DIODE GEN REV 600V 320A DO205AB

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 320A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -60°C ~ 180°C
pacchetto: DO-205AB, DO-9, Stud
Azione6.528
600V
320A
1.2V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-60°C ~ 180°C
VS-1N1186R
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 35A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 110A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -65°C ~ 190°C
pacchetto: DO-203AB, DO-5, Stud
Azione5.680
200V
35A
1.7V @ 110A
Standard Recovery >500ns, > 200mA (Io)
-
10mA @ 200V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-65°C ~ 190°C
HSM845GE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 45V 8A DO215AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: DO-215AB
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-215AB, SMC Gull Wing
Azione3.168
45V
8A
620mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 45V
-
Surface Mount
DO-215AB, SMC Gull Wing
DO-215AB
-55°C ~ 175°C
NSB8ATHE3_A/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 55pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.568
50V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
55pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
1N4004GPE-E3/93
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione5.008
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 400V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
SBR10U200P5Q-13
Diodes Incorporated

DIODE SBR 200V 10A POWERDI5

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI?5
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: PowerDI? 5
Azione4.144
200V
10A
880mV @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 200V
-
Surface Mount
PowerDI? 5
PowerDI?5
-65°C ~ 175°C
JANTXV1N5418-TR-1
Semtech Corporation

DIODE GEN PURP 400V 4.5A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 4.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 165pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
400 V
4.5A
1.1 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
1 µA @ 400 V
165pF @ 4V, 1MHz
Through Hole
Axial
Axial
-
UES1104HR2-TR
Microchip Technology

DIODE GEN PURP 200V 2A A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
200 V
2A
1.25 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
-
-
Through Hole
A, Axial
A, Axial
-
GSPS1B5H
Good-Ark Semiconductor

RECTIFIER, SCHOTTKY, LOW VF, 1A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: iSGA (SOD-123HS)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione18.000
150 V
1A
850 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 µA @ 150 V
-
Surface Mount
SOD-123H
iSGA (SOD-123HS)
-55°C ~ 150°C
RUR3070
Harris Corporation

DIODE AVALANCHE 700V 30A TO220AC

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 700 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Request a Quote
700 V
30A
1.8 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
100 µA @ 700 V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
SB130AS_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 30V 1A SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 45 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Azione8.307
30 V
1A
480 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
45 µA @ 30 V
-
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
PU6DCH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 6A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 200 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione15.876
200 V
6A
940 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
2 µA @ 200 V
110pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
HER104BULK
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 300V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
Request a Quote
300 V
1A
1.1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 300 V
50pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
SS1H10LS
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 1A SOD123HE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione27.678
100 V
1A
800 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 100 V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
RS1GQ-13-F
Diodes Incorporated

DIODE GEN PURPOSE SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SS210
MDD

DIODE SCHOTTKY 100V 2A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 100 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
100 V
2A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 100 V
80pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
GATELEADWHBK750XXPSA1
Infineon Technologies

STD THYR/DIODEN DISC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
HSB83-90TL
Renesas Electronics Corporation

DIODE FOR HIGH VOLTAGE SWITCHING

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RBR2LB60BTBR1
Rohm Semiconductor

LOW VF, 60V, 2A, SMBP, SCHOTTKY

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMBP
  • Operating Temperature - Junction: 150°C
pacchetto: -
Azione8.919
60 V
2A
520 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 60 V
-
Surface Mount
DO-214AA, SMB
SMBP
150°C
SK24L-AU_R2_000A1
Panjit International Inc.

DIODE SCHOTTKY 40V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 40 V
  • Capacitance @ Vr, F: 170pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Azione21.258
40 V
2A
450 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 40 V
170pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 125°C
R42100TS
Microchip Technology

RECTIFIER

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: -
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1000 V
125A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 1000 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C